"Takuya Saraya,Kazuo Ito,Toshihiko Takakura,Munetoshi Fukui,Shinichi Suzuki,Kiyoshi Takeuchi,Masanori Tsukuda,Katsumi Satoh,Tomoko Matsudai,Kuniyuki Kakushima,Takuya Hoshii,Kazuo Tsutsui,Hiroshi Iwai,Atsushi Ogura,Wataru Saito,Shin-ichi Nishizawa,Ichiro Omura,Hiromichi Ohashi,Toshiro Hiramoto","3.3 kV Back-Gate-Controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology","International Electron Devices Meeting (IEDM) 2020",,,,,,2020,Dec.
""Kazuto Mizutani,Yu-Wei Lin,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima"","Observation of wake-up effect on ferroelectric Y:HfO2 thickness scaling","Electrochemical Society (ECS) PRIME 2020",,,,,,2020,Oct.
"Y.-W. Lin,K. Mizutani,T. Hoshii,H. Wakabayashi,K. Tsutsui,Y.-F. Tsao,T.-J. Huang,H.-T. Hsu,K. Kakushima","Ferroelectric HfO2 Capacitors for Varctor Application in GHz","Electrochemical Society (ECS) PRIME 2020",,,,,,2020,Oct.
"A. Miyata,T. Hoshii,H. Wakabayashi,K. Tsutsui,K. Kakushima","Photocurrent measurements of AlGaN/GaN HEMT under X-ray irradiation","Electrochemical Society (ECS) PRIME 2020",,,,,,2020,Oct.
"H. Nishida,T. Hoshii,H. Wakabayashi,K. Tsutsui,K. Kakushima","A simulation study on the transient leakage current analysis of a GaN epitaxial layer","Electrochemical Society (ECS) PRIME 2020",,,,,,2020,Oct.
""Atsuhiro Ohta,J. Song,T. Hoshii,H. Wakabayashi,K. Tsutsui,K. Kakushima"","Electrical Characteristics of Atomic Layer Deposited Y-silicate Dielectrics","Electrochemical Society (ECS) PRIME 2020",,,,,,2020,Oct.
"S. Tsai,T. Hoshii,H. Wakabayashi,K. Tsutsui,K. Kakushima","Highly Oriented Growth of AlxSc1-xN Ferroelectric Film on W Bottom Electrodes","Electrochemical Society (ECS) PRIME 2020",,,,,,2020,Oct.
"久恒 悠介,金 相佑,星井 拓也,角嶋 邦之,若林 整,筒井 一生","横型GaN FinFETの構造最適化についての検討","第81回応用物理学会秋季学術講演会",,,,,,2020,Sept.
"Sunglin Tsai,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","Thickness Scaling on Ferroelectric Al0.8Sc0.2N Films","International Conference of Solid State Devices and Materials (SSDM) 2020",,,,,,2020,Sept.
"Masaya Hamada,Kentaro Matsuura,Takuro Sakamoto,Haruki Tanigawa,Iriya Muneta,Takuya Hoshii,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Sulfurization even through Al2O3 Passivation Film Simultaneously Preventing Oxidation",,"Japanese Journal of Applied Physics (JJAP)",,"Vol. 59","No. 10","Page 105501",2020,Sept.
"木村 安希,星井 拓也,宮野 清孝,津久井 雅之,水島 一郎,依田 孝,角嶋 邦之,若林 整,筒井 一生","InAlN/(AlN)/GaN構造におけるキャリア移動度の温度依存性","第81回応用物理学会秋季学術講演会",,,,,,2020,Sept.
"筒井 一生,松橋 泰平,星井 拓也,角嶋 邦之,若林 整,永山 勉,樋口 隆弘,加藤 慎一,谷村 英昭,室 隆桂之,松下 智裕,森川 良忠","AsおよびBの共ドープによるSi中Asクラスターの特性制御","第81回応用物理学会秋季学術講演会",,,,,,2020,Sept.
"高山 研,太田 貴士,佐々木 満孝,向井 勇人,濱田 拓也,高橋 言雄,井出 利英,清水 三聡,星井 拓也,角嶋 邦之,若林 整,筒井 一生","選択成長法を用いたGaN FinFETの作製:リーク電流抑制の改良","第81回応用物理学会秋季学術講演会",,,,,,2020,Sept.
"Kazuto Mizutani,Yu Wei Lin,Takuya Hoshii,Hiroshi Funakubo,Hitoshi Wakabayashi,Kazuto Tsutsui,Kuniyuki Kakushima","Formation of Ferroelectric Y-doped HfO2 though Atomic Layer Deposition and Low Temperature Post Annealing","2020 VLSI-TSA Symposium (The 2020 International Symposium on VLSI Technology, System and Applications)",,,,,,2020,Aug.
"Jinhan Song,Y. Lin,T. Hoshii,H. Wakabayashi,K. Tsutsui,K. Kakushima,Takuya Hoshii","Atomic layer deposition of Y2O3 thin films with a high growth per cycle by Ar multiple boost injection",,"Japanese Journal of Applied Physics",,,,,2020,July
"Haruki Tanigawa,Kentaro Matsuura,Iriya Muneta,Takuya Hoshii,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Enhancement-mode accumulation capacitance?voltage characteristics in TiN/ALD-Al2O3/sputtered-MoS2 top-gated stacks",,"Japanese Journal of Applied Physics",,"Vol. 59","No. SM","pp. SMMC01",2020,July
"J. Molina,T. Mimura,Y. Nakamura,T. Shimizu,H. Funakubo,I. Fujiwara,T. Hoshii,S. Ohmi,A. Hori,H. Wakabayashi,K. Tsutsui,K. Kakushima","Interface engineering of BEOL compatible ferroelectric Y:HfO2 device for enhanced endurance","2020 IMW (The 12th International Memory Workshop)",,,,,,2020,May
"Kiyoshi Takeuchi,Munetoshi Fukui,Takuya Saraya,Kazuo Itou,Toshihiko Takakura,Shinichi Suzuki,Yohichiroh Numasawa,Naoyuki Shigyo,Kuniyuki Kakushima,Takuya Hoshii,Kazuyoshi Furukawa,Masahiro Watanabe,Hitoshi Wakabayashi,Kazuo Tsutsui,Hiroshi Iwai,Atsushi Ogura,Wataru Saito,Shin-ichi Nishizawa,Masanori Tsukuda,Ichiro Omura,Hiromichi Ohashi,Toshiro Hiramoto","Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs",,"IEEE Trans. On Semiconductor Manufactureing",,"Vol. 33","No. 2","pp. 159-165",2020,May
"Takuya Saraya,Kazuo Itou,Toshihiko Takakura,Munetoshi Fukui,Shinichi Suzuki,Kiyoshi Takeuchi,Kuniyuki Kakushima,Takuya Hoshii,Kazuo Tsutsui,Hiroshi Iwai,Shin-ichi Nishizawa,Ichiro Omura,Toshiro Hiramoto","Impact of structural parameter scaling on on-state voltage in 1200 V scaled IGBTs",,"Japanese Journal of Applied Physics",,,,,2020,Apr.
"Jinan Song,Lyu Wei Lin,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","Atomic Layer Deposition of Y2O3 Thin Films with a High Growth per Cycle by Ar Multiple Boost Injection",,"Japanese Journal of Applied Physics (JJAP)",,"Vol. 59",,,2020,Apr.
"Haruki Tanigawa,Kentaro Matsuura,Iriya Muneta,Takuya Hoshii,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Enhancement-Mode Accumulation Capacitance-Voltage Characteristics in TiN/ALD-Al2O3/Sputtered-MoS2 Top-Gated Stacks",,"Japanese Journal of Applied Physics (JJAP)",,"Vol. 59",,,2020,Apr.
"Takuya Saraya,Kazuo Itou,Toshihiko Takakura,Munetoshi Fukui,Shinichi Suzuki,Kiyoshi Takeuchi,Kuniyuki Kakushima,Takuya Hoshii,Kazuo Tsutsui,Hiroshi Iwai,Shin-ichi Nishizawa,Ichiro Omura,Toshiro Hiramoto","Impact of Structural Parameter Scaling on On-state Voltage in 1200V Scaled IGBTs",,"Japanese Journal of Applied Physics",,"Vol. 59","No. SG",,2020,Mar.
"松橋 泰平,星井 拓也,沖田 寛昌,中島 昭,角嶋 邦之,若林 整,筒井 一生","分極接合基板における2DEG枯渇電圧の解析的導出","第67回応用物理学会春期学術講演会",,,,,,2020,Mar.
"木村 安希,星井 拓也,宮野 清孝,布上 真也,名古 肇,水島 一郎,依田 孝,角嶋 邦之,若林 整,筒井 一生","InAlN/GaNヘテロ構造におけるキャリア輸送特性のAlNスペーサ層膜厚依存性","第67回応用物理学会春期学術講演会",,,,,,2020,Mar.
"Joel Molina-Reyes,Takuya Hoshii,Shun-Ichiro Ohmi,Hiroshi Funakubo,Atsushi Hori,Ichiro Fujiwara,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","NiSi2 as a Bottom Electrode for Enhanced Endurance of Ferroelectric Y-doped HfO2 Thin Films",,"Jpn. J. Appl. Phys.",,"Vol. 59",,"pp. SGGB06-1-6",2020,Feb.
"Joel Molina-Reyes,Takuya Hoshii,Shun-Ichiro Ohmi,Hiroshi Funakubo,Atsushi Hori,Ichiro Fujiwara,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","NiSi2 as a Bottom Electrode for Enhanced Endurance of Ferroelectric Y-doped HfO2 Thin Films",,"Japanese Journal of Applied Physics",,"Vol. 59","No. SG",,2020,Feb.