"Satoshi Igarashi,Yusuke Mochiduki,Haruki Tanigawa,Masaya Hamada,Kentaro Matsuura,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Low Contact Resistance at Interface between Sputtered-MoS2 Film and TiSi2 Contact Treated by Higher-Temperature Forming-Gas Annealing","International Conference of Solid State Devices and Materials (SSDM) 2020",,,,,,2020,Sept.
"Masaya Hamada,Kentaro Matsuura,Takuro Sakamoto,Haruki Tanigawa,Iriya Muneta,Takuya Hoshii,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Sulfurization even through Al2O3 Passivation Film Simultaneously Preventing Oxidation",,"Japanese Journal of Applied Physics (JJAP)",,"Vol. 59","No. 10","Page 105501",2020,Sept.
"Kentaro Matsuura,Masaya Hamada,Takuya Hamada,Haruki Tanigawa,Takuro Sakamoto,Atsushi Hori,Iriya Muneta,Takamasa Kawanago,Kuniyuki Kakushima,Kazuo","Normally-off sputtered-MoS2 nMISFETs with TiN top-gate electrode all defined by optical lithography for chip-level integration",,"Japanese Journal of Applied Physics (JJAP) (Rapid Communication)",,"Vol. 59","No. 8","Page 80906",2020,Aug.
"Haruki Tanigawa,Kentaro Matsuura,Iriya Muneta,Takuya Hoshii,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Enhancement-Mode Accumulation Capacitance-Voltage Characteristics in TiN/ALD-Al2O3/Sputtered-MoS2 Top-Gated Stacks",,"Japanese Journal of Applied Physics (JJAP)",,"Vol. 59",,,2020,Apr.
"�¼‰Y Œ«‘¾˜N,à_“c �¹–ç,à_“c ‘ñ–ç,’J�ì �°‹I,�â–{ ‘ñ˜N,–x “Ö,�@“c ˆÉ—�–ç,�ì“ߎq �‚’¨,Šp“ˆ –M”V,“›ˆä ˆê�¶,�¬–¸ ŒúŽu,Žá—Ñ �®","‘å–Ê�Ï�W�ω»‚ÉŒü‚¯‚½ƒXƒpƒbƒ^‘Í�σm�[ƒ}ƒŠ�[ƒIƒtMoS2-nMISFETs","‘æ67‰ñ‰ž—p•¨—�Šw‰ï�tŠúŠw�p�u‰‰‰ï",,,,,,2020,Mar.