"Shinya Imai,Takuya Hamada,Masaya Hamada,Takanori Shirokura,Shigetaka Tomiya,Iriya Muneta,Kuniyuki Kakushima,Tetsuya Tatsumi,Kazuo Tsutsui,Hitoshi Wakabayashi","Importance of MoS2-Compound Sputtering even with Sulfur-Vapor Anneal for Chip-Size Fabrication","International Conference of Solid State Devices and Materials (SSDM) 2020",,,,,,2020,Sept.
"Masaya Hamada,Kentaro Matsuura,Takuya Hamada,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","ZrS2 Ambipolar FETs with Schottky Barrier to Near-Midgap TiN Contact Controlled by Top Gate TiN/Al2O3 Stack","International Conference of Solid State Devices and Materials (SSDM) 2020",,,,,,2020,Sept.
"�‚ŽR Œ¤,‘¾“c ‹MŽm,�²�X–Ø –ž�F,Œüˆä —E�l,à_“c ‘ñ–ç,�‚‹´ Œ¾—Y,ˆä�o —˜‰p,�´�… ŽO‘�,�¯ˆä ‘ñ–ç,Šp“ˆ –M”V,Žá—Ñ �®,“›ˆä ˆê�¶","‘I‘ð�¬’·–@‚ð—p‚¢‚½GaN FinFET‚Ì�ì�»:ƒŠ�[ƒN“d—¬—}�§‚̉ü—Ç","‘æ81‰ñ‰ž—p•¨—�Šw‰ï�H‹GŠw�p�u‰‰‰ï",,,,,,2020,Sept.
"Kentaro Matsuura,Masaya Hamada,Takuya Hamada,Haruki Tanigawa,Takuro Sakamoto,Atsushi Hori,Iriya Muneta,Takamasa Kawanago,Kuniyuki Kakushima,Kazuo","Normally-off sputtered-MoS2 nMISFETs with TiN top-gate electrode all defined by optical lithography for chip-level integration",,"Japanese Journal of Applied Physics (JJAP) (Rapid Communication)",,"Vol. 59","No. 8","Page 80906",2020,Aug.
"�¼‰Y Œ«‘¾˜N,à_“c �¹–ç,à_“c ‘ñ–ç,’J�ì �°‹I,�â–{ ‘ñ˜N,–x “Ö,�@“c ˆÉ—�–ç,�ì“ߎq �‚’¨,Šp“ˆ –M”V,“›ˆä ˆê�¶,�¬–¸ ŒúŽu,Žá—Ñ �®","‘å–Ê�Ï�W�ω»‚ÉŒü‚¯‚½ƒXƒpƒbƒ^‘Í�σm�[ƒ}ƒŠ�[ƒIƒtMoS2-nMISFETs","‘æ67‰ñ‰ž—p•¨—�Šw‰ï�tŠúŠw�p�u‰‰‰ï",,,,,,2020,Mar.