"Mitsuki Nishizawa,T. Hoshii,H. Wakabayashi,K. Tsutsui,I. Mizushima,T. Yoda,K. Kakushima","Introduction of surface field-plate for accurate minority carrier lifetime estimation of 4H-SiC epitaxial layer","International Workshop on Dielectric Thin Films for Futre Electron Devices -Science and Technology-",,,,,,2021,Nov.
"Si-Meng Chen,Sung-Lin Tsai,Kazuto Mizutani,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","GaN HEMTs with self-upward-polarized AlScN gate dielectrics toward E-mode operation","International Workshop on Dieectfic Thin Films for Futre Electron Devices -Science and Technology-",,,,,,2021,Nov.
"Sho Sasaki,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","Observation of ferroelectricity in atomic layer deposited AlN film","International Workshop on Dierectric Thin Films for Futre Electron Devices -Science and Technology-",,,,,,2021,Nov.
"R. Shibukawa,S. -L. Tsai,T. Hoshii,H. Wakbayashi,K. Tsutsui,K. Kakushima","Thermal stability of ferroelectric AlScN films","International Workshop on Dierectric Thin Films for Futre Electron Devices -Science and Technology-",,,,,,2021,Nov.
"Kazuto Mizutani,T. Hoshii,H. Wakabayashi,K. Tsutsui,K. Kakushima","Recovery of ferroelectric property after endurance test by positive reset voltage application for CeOx-capped ferroelectric HfO2 films","International Workshop on Dielectric Thin Films for Futre Electron Devices -Science and Technology-",,,,,,2021,Nov.
"Takamasa Kawanago,Takahiro Matsuzaki,Ryosuke Kajikawa,Iriya Muneta,Takuya Hoshii,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Experimental Demonstration of High-Gain CMOS Inverter at Low Vdd  Down to 0.5 V Consisting of WSe2  n/p FETs","International Conference on Solid State Devices and Materials",,,,,,2021,Sept.
"Ryo Ono,Shinya Imai,Yuta Kusama,Takuya Hamada,Masaya Hamada,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Nobuyuki Ikarashi,Hitoshi Wakabayashi","Growth Mechanism of PVD MoS2 Film from Sub-Monolayer Region","International Conference on Solid State Devices and Materials",,,,,,2021,Sept.
"Takuya Hamada,Taiga Horiguchi,Masaya Hamada,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Tetsuya Tatsumi,Shigetaka Tomiya,Hitoshi Wakabayashi","Grain Size Enlargement in 2D WS2 Film with Low-Power RF-Magnetron Sputtering","Internatonal Conference on Solid State Devices and Materials",,,,,,2021,Sept.
"小森 勇太,木村 安希,星井 拓也,宮野 清孝,津久井 雅之,水島 一郎,依田 孝,角嶋 邦之,若林 整,筒井 一生","InAlN/AlN/GaN構造におけるキャリア散乱要因のAlN層厚依存性","第82回応用物理学会秋季学術講演会",,,,,,2021,Sept.
"小森 勇太,星井 拓也,宮野 清孝,津久井 雅之,水島 一郎,依田 孝,角嶋 邦之,若林 整,筒井 一生","InAlN/AlN/GaN構造中2DEGにおける移動度のキャリア濃度依存性","第69回応用物理学会春季学術講演会",,,,,,2021,Sept.
"Hei Wong,Jieqiong Zhang,HIROSHI IWAI,Kuniyuki KAKUSHIMA","Characteristic Variabilities of Subnanometer EOT La2O3 Gate Dielectric Film of Nano CMOS Devices",,"Nanomaterials",,"Vol. 11","No. 8",,2021,Aug.
"Takuya Hamada,Masaya Hamada,Satoshi Igarashi,Taiga Horiguchi,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Tetsuya Tatsumi,Shigetaka Tomiya,Hitoshi Wakabayashi","WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET with TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box",,"Journal of the Electron Devices Society (J-EDS)",,"Vol. 9",,"p. 1117",2021,Aug.
"Masaya Hamada,Takuya Hamada,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Side-Contact Architecture for p/n-Stacked-Nano-Sheet ZrS2 2D-FETs Beyond 1-nm Technology Node","International Workshop on Junction Technology (IWJT2021)",,,,,,2021,June
"Sung-Lin Tsai,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Tien-Kan Chung,Edward Yi Chang,Kuniyuki Kakushima","On the thickness scaling of ferroelectricity in Al0.78Sc0.22N films",,"Japanese Journal of Applied Physics (JJAP) （SSDM特集号）",,"Vol. 60",,"Page SBBA05",2021,Apr.
"Masahiro Watanabe,Naoyuki Shigyo,Takuya Hoshii,Kazuyoshi Furukawa,Kuniyuki Kakushima,Katsumi Satoh,Tomoko Matsudai,Takuya Saraya,Iriya Muneta,Hitoshi Wakabayashi,Akira Nakajima,Shin-ichi Nishizawa,Kazuo Tsutsui,Toshiro Hiramoto,Hiromichi Ohashi,Hiroshi Iwai","Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices","IEEE 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021)","Proceedings of the 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021)",,,,"pp. 217-219",2021,Apr.
"筒井一生,濱田拓也,高山 研,金 相佑,星井拓也,角嶋邦之,若林 整,高橋言緒,井手利英,清水三聡","選択成長法を用いたGaN 系FinFET","電気学会電子デバイス研究会",,,,,,2021,Mar.
"S-L. Tsai,T. Hoshii,H. Wakabayashi,K. Tsutsui,T-K. Chung,E. Chang,K. Kakushima","Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering",,"Applied Physics Letters",,"Vol. 118","No. 8","Page 82902",2021,Feb.
"Junji Kataoka,Sung-Lin Tsai,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","A possible origin of the large leakage current in ferroelectric Al1-xScxN films",,"Japanese Journal of Applied Physics (JJAP) (Rapid Communication)",,"Vol. 60",,"Page 30907",2021,Feb.
"Jinhan Song,Atsuhiro Ohta,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","High field-effect mobility with suppressed negative threshold voltage shift in 4H-SiC MOSFET with cerium oxide interfacial layer",,"Japanese Journal of Applied Physics (JJAP) (Rapid Communication)",,"Vol. 60",,"Page 30901",2021,Feb.
"Shinya Imai,Takuya Hamada,Masaya Hamada,Takanori Shirokura,Iriya Muneta,Kuniyuki Kakushima,Tetsuya Tatsumi,Shigetaka Tomiya,Kazuo Tsutsui,Hitoshi Wakabayashi","Importance of Crystallinity Improvement in MoS2 film just after MoS2-Compound Sputtering even followed by Post Sulfurization for Chip-Size Fabrication",,"Japanese Journal of Applied Physics (JJAP) （SSDM特集号）",,"Vol. 60",,"Page SBBH10",2021,Feb.
"Takuya Hamada,Shigetaka Tomiya,Tetsuya Tatsumi,Masaya Hamada,Taiga Horiguchi,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Sheet Resistance Reduction of MoS2 Film using Sputtering and Chlorine Plasma Treatment followed by Sulfur Vapor Annealing",,"Journal of the Electron Devices Society (J-EDS)",,"Vol. 9",,"Page 278-285",2021,Jan.
"Masaya Hamada,Kentaro Matsuura,Takuya Hamada,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","ZrS2 Symmetrical-Ambipolar FETs with Near-Midgap TiN Film for Both Top-Gate electrode and Schottky-Barrier Contact",,"Japanese Journal of Applied Physics (JJAP) （SSDM特集号）",,"Vol. 60",,"Page SBBH05",2021,Jan.
"Satoshi Igarashi,Yusuke Mochiduki,Haruki Tanigawa,Masaya Hamada,Kentaro Matsuura,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Self-Aligned-TiSi2 Bottom Contact with APM Cleaning and Post-annealing for Sputtered-MoS2 Film",,"Japanese Journal of Applied Physics (JJAP) （SSDM特集号）",,"Vol. 60",,"Page SBBH04",2021,Jan.