"Masatoshi Kimura,Xinyi He,Takayoshi Katase,Terumasa Tadano,Jan M. Tomczak,Makoto Minohara,Ryotaro Aso,Hideto Yoshida,Keisuke Ide,Shigenori Ueda,Hidenori Hiramatsu,Hiroshi Kumigashira,Hideo Hosono,Toshio Kamiya","Appearance and large enhancement of phonon drag thermopower by epitaxial strain and phonon leaking from LaAlO3 in LaNiO3","Materials Research Meeting 2021",,,,,,2021,Dec.
"Yang Shin Liu,Akira Yamaguchi,Yue Yang,Hideki Abe,Shigenori Ueda,Toyokazu Tanabe,Masahiro Miyauchi","Visible light induced CO2 reduction by mixed-valence tin oxide",,"ACS appl. Energy Mater.",,"Vol. 4",,"pp. 13415-13419",2021,Dec.
"Shusaku Shoji,Sani Bin Mohd Najib Abdillah,Min-Wen Yu,Tomokazu Yamamoto,Sou Yasuhara,Akira Yamaguchi,Xiaobo Peng,matsumura Sho,Satoshi Ishii,Yohei Cho,Takeshi Fujita,Shigenori Ueda,Chen Kuo-ping,Hideki Abe,Masahiro Miyauchi","Charge partitioning by intertwined metal-oxide nano-architectual networks for the photocatalytic dry reforming of  methane",,"Chem Catalysis",,"Vol. 2",,"pp. 1-9",2021,Dec.
"Yu-Shien Shiah,Kihyung Sim,Yuhao Shi,Katsumi Abe,Shigenori Ueda?,Masato Sasase,Junghwan Kim?,Hideo Hosono","Mobility?stability trade-off in oxide thin-film  transistors",,"Nature Electronics",,"Vol. 4",,"pp. 800-807",2021,Nov.
"Masatoshi Kimura,Xinyi He,Takayoshi Katase*,Terumasa Tadano,Jan M. Tomczak,Makoto Minohara,Ryotaro Aso,Hideto Yoshida,Keisuke Ide,Shigenori Ueda,Hidenori Hiramatsu,Hiroshi Kumigashira,Hideo Hosono,Toshio Kamiya","Large phonon drag thermopower boosted by massive electrons and phonon leaking in LaAlO3/LaNiO3/LaAlO3 heterostructure",,"Nano letters",,"Vol. 21",,"pp. 9240-9246",2021,Oct.
"Yu-Shien Shiah,Kihyung Sim,Shigenori Ueda,Junghwan Kim,Hideo Hosono","Unintended Carbon-Related Impurity and Negative Bias Instability in High-Mobility Oxide TFTs",,"IEEE Electron Device Letters",,"Vol. 42",,"pp. 1319 - 1322",2021,July
"Cheol Hee Choi,Taikyu Kim,Shigenori Ueda,Yu-Shien Shiah,Hideo Hosono,Junghwan Kim,Jae Kyeong Jeong","High-Performance Indium Gallium Tin Oxide Transistors with an Al2O3 Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 ��C: Roles of Hydrogen and Excess Oxygen in the Al2O3 Dielectric Film",,"ACS Applied Materials and Interfaces","ACS Publications",,,,2021,June
"Akira Saitoh,Katsuki Hayashi,Kota Hanzawa,Shigenori Ueda,Shiro Kawachi,Jun-ichi Yamaura,Keisuke Ide,Junghwan Kim,Gregory Tricot,Satoru Matsuishi,Kazuki Mitsui,Tatsuki Shimizu,Masami Mori,Hideo Hosono,Hidenori Hiramatsu","Origins of the coloration from structure and valence state of bismuth oxide glasses",,"J. NON-CRYST. SOLIDS.",,"  560",,"  120720-1 - 120720-14",2021,Feb.