"Munehiro Ogasawara,Ryoichiro Yoshida,Yuta Oshima,Motoki Ando,Arisa Kimura,Kenji Hirakawa,Masayuki Iwase,Shinsuke Nabeya,Takashi Yoda,Noboru Ishihara,Hiroyuki Ito","Dependence of total ionizing dose effect of nMOS transistors on the on/off duty ratio of a gate voltage",,"Japanese Journal of Applied Physics",,"Vol. 60",,"  104501-1",2021,Dec.
"Mitsuki Nishizawa,T. Hoshii,H. Wakabayashi,K. Tsutsui,I. Mizushima,T. Yoda,K. Kakushima","Introduction of surface field-plate for accurate minority carrier lifetime estimation of 4H-SiC epitaxial layer","International Workshop on Dielectric Thin Films for Futre Electron Devices -Science and Technology-",,,,,,2021,Nov.
"木村有佐,吉田僚一郎,安藤幹,大島佑太,鍋屋信介,平川顕二,岩瀬正幸,小笠原宗博,依田孝,石原昇,伊藤浩之","P型とN型のFETサイズ比が異なるCMOS論理回路へのγ線照射の影響","2021年 電子情報通信学会ソサイエティ大会",,,,,,2021,Sept.
"吉田僚一郎,木村有佐,安藤幹,大島佑太,鍋屋信介,平川顕二,岩瀬正幸,石原昇,小笠原宗博,依田孝,伊藤浩之","ELT(Enclosed Layout Transistor)による耐放射線CMOS集積回路の設計","DAシンポジウム2021","情報処理学会シンポジウムシリーズ","情報処理学会",,,,2021,Sept.
"小森 勇太,木村 安希,星井 拓也,宮野 清孝,津久井 雅之,水島 一郎,依田 孝,角嶋 邦之,若林 整,筒井 一生","InAlN/AlN/GaN構造におけるキャリア散乱要因のAlN層厚依存性","第82回応用物理学会秋季学術講演会",,,,,,2021,Sept.
"小森 勇太,星井 拓也,宮野 清孝,津久井 雅之,水島 一郎,依田 孝,角嶋 邦之,若林 整,筒井 一生","InAlN/AlN/GaN構造中2DEGにおける移動度のキャリア濃度依存性","第69回応用物理学会春季学術講演会",,,,,,2021,Sept.
"Kenta Chokawa,Yoshiaki Daigo,Ichiro Mizushima,Takashi Yoda,Kenji Shiraishi","First-principles and thermodynamic analysis for gas phase reactions and structures of the SiC(0001) surface under conventional CVD and Halide CVD environments",,"Japanese Journal of Applied Physics",,"Vol. 60",,"  085503-1",2021,Aug.
"木村有佐,吉田僚一郎,安藤幹,大島佑太,鍋屋信介,平川顕二,岩瀬正幸,小笠原宗博,依田孝,石原昇,伊藤浩之","CMOSリング発振回路へのγ線照射の影響とその要因解析","第34回 回路とシステムのワークショップ",,,,,,2021,Aug.
"Takashi Yoda,Noboru Ishihara,Yuta Oshima,Motoki Ando,Ryoichiro Yoshida,Shinsuke Nabeya,Kenji Hirakawa,Masayuki Iwase,Munehiro Ogasawara,Hiroyuki Ito","CMOS 2-D Array Data Transfer Circuit Design and Evaluation for Use in A Radiation Environment","SSDM2021",,,,,,2021,July
"木村有佐,吉田僚一郎,安藤幹,大島佑太,鍋屋信介,平川顕二,岩瀬正幸,小笠原宗博,依田孝,石原昇,伊藤浩之","リング発振回路におけるELTの耐放射線評価","第68回 応用物理学会春季学術講演会",,,,,,2021,Mar.