"Jinhan Song,Atsuhiro Ohta,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","High field-effect mobility with suppressed negative threshold voltage shift in 4H-SiC MOSFET with cerium oxide interfacial layer",,"Japanese Journal of Applied Physics (JJAP) (Rapid Communication)",,"Vol. 60",,"Page 30901",2021,Feb.