"Takamasa Kawanago,Ryosuke Kajikawa,Kazuto Mizutani,Sung-Lin Tsai,Iriya Muneta,Takuya Hoshii,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact",,"IEEE Journal of the Electron Devices Society","IEEE","Vol. 11",,"p. 15-21",2022,Nov.
"Reika Ota,Shinnosuke Yasuoka,Ryoichi Mizutani,Takahisa Shiraishi,Kuniyuki Kakushima,Hiroshi Funakubo","Ferroelectricity of 20-nm Thick (Al0.8Sc0.2)N Thin Films with TiN Electrodes","2022 U.S.-Japan Seminar on Dielectric and Piezoelectric Ceramics",,,,,,2022,Nov.
"Iriya Muneta,Takanori Shirokura,Pham Nam Hai,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure",,"Scientific Reports",,"Vol. 12",,"pp. 17199",2022,Oct.
"Shonosuke Kimura,Takuya Hoshii,Kuniyuki Kakushima,Hitoshi Wakabayashi,Kazuo Tsutsui","Performance Improvements of P-channel GaN HFETs by Atomic Layer Etching using Nitrogen Plasma","the International Workshop on Nitride Semiconductors 2022",,,,,,2022,Oct.
"川那子 高暢,梶川 亮介,水谷 一翔,Tsai Sung Lin,宗田 伊理也,星井 拓也,角嶋 邦之,筒井 一生,若林 整","アルミニウムスカンジウム合金(AlSc)と酸化タングステン(WOx)をソース/ドレイン電極に用いたWSe2 n/p FETとCMOSインバータ応用","第83回応用物理学会秋季学術講演会",,,,,,2022,Sept.
"小野 凌,今井 慎也,宗田 伊理也,角嶋 邦之,筒井 一生,若林 整","微結晶MoS2膜への硫黄雰囲気アニールによる結晶性向上","第83回応用物理学会秋季学術講演会",,,,,,2022,Sept.
"今井 慎也,小野 凌,宗田 伊理也,角嶋 邦之,辰巳 哲也,冨谷 茂隆,筒井 一生,若林 整","MoS2膜質のスパッタ成膜レート依存性調査","第83回応用物理学会秋季学術講演会",,,,,,2022,Sept.
"水谷 一翔,星井 拓也,川那子 高暢,宗田 伊理也,若林 整,筒井 一生,角嶋 邦之","希土類酸化物キャッピングによるY:HfO2キャパシタの信頼性改善","第83回応用物理学会秋季学術講演会",,,,,,2022,Sept.
"安岡慎之介,大田怜佳,岡本一輝,石濱圭佑,清水荘雄,角嶋邦之,上原雅人,山田浩志,秋山守人,小金澤智之,L. S. R. Kumara,Okkyun Seo,坂田修身,舟窪浩","メモリ応用に向けた(Al, Sc)N膜の薄膜化の検討","第83回応用物理学会秋季学術講演会",,,,,,2022,Sept.
"宗田 伊理也,白倉 孝典,ファム ナムハイ,角嶋 邦之,筒井 一生,若林 整","強磁性を示す二次元多結晶層状物質MoS2における非対称線形磁気抵抗","第83回応用物理学会秋季学術講演会",,,,,,2022,Sept.
"立松 真一,濱田 昌也,濱田 拓也,宗田 伊理也,角嶋 邦之,筒井 一生,若林 整","アニール処理によるWS2-Niエッジコンタクト特性の向上","第83回応用物理学会秋季学術講演会",,,,,,2022,Sept.
"宗田 伊理也,白倉 孝典,PHAM NAM HAI,角嶋 邦之,筒井 一生,若林 整","Ferromagnetism and current control of magnetoresistance  in two-dimensional polycrystalline MoS2","第63回フラーレン・ナノチューブ･グラフェン総合シンポジウム",,,,,,2022,Aug.
"阿野 響太郎,星井 拓也,若林 整,筒井 一生,依田 孝,角嶋 邦之","ゲート付きSiC pnダイオードの電気特性評価","第83回応用物理学会秋季学術講演会",,,,,,2022,Aug.
"Taiga Horiguchi,Takuya Hamada,Masaya Hamada,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Tetsuya Tatsumi,Shigetaka Tomiya,Hitoshi Wakabayashi","Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing",,"Japanese Journal of Applied Physics",,"Vol. 61",,"  075506",2022,July
"Si-Meng Chen,Sung Lin Tsai,Kazuto Mizutani,Takuya Hoshii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Edward Yi Chang,Kuniyuki KAKUSHIMA","GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation",,"Japanese Journal of Applied Physics",,"Volume 61",,,2022,June
"M. Nishizawa,T. Hoshii,H. Wakabayashi,K. Tsutsui,Yoshiaki Daigo,Ichiro Mizushima,T. Yoda,K. Kakushima","Minority carrier lifetime extraction methodology based on parallel pn diodes with a field plate",,"Japanese Journal of Applied Physics",,"Vol. 61",,"  SH1011",2022,June
"Hei Wong,Kuniyuki KAKUSHIMA","On the Vertically Stacked Gate-All-Around Nanosheet and Nanowire Transistor Scaling beyond the 5 nm Technology Node",,"Nanomaterials",,"  12","  10","  1739",2022,May
"Sung-Lin Tsai,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Tien-Kan Chung,Edward Yi Chang,Kuniyuki Kakushima","Field cycling behavior and breakdown mechanism of ferroelectric Al0.78Sc0.22N films",,"Japanese Journal of Applied Physics (JJAP)",,"Vol. 61",,,2022,May
"Ryota Shibukawa,Sung Lin Tsai,Takuya Hoshii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kuniyuki KAKUSHIMA","Influence of sputtering power on the switching and reliability of ferroelectric Al0.7Sc0.3N films",,"Japanese Journal of Applied Physics",,"Volume 61",,,2022,Apr.
"Atsuki Miyata,Takuya Hoshii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kuniyuki KAKUSHIMA","Suppression of decay time in transient drain current of back-gated GaN HEMT under UV exposure",,"Japanese Journal of Applied Physics",,"  61","  SH","  SH1005",2022,Apr.
"宗田 伊理也,白倉 孝典,ファム ナム ハイ,角嶋 邦之,筒井 一生,若林 整","二次元多結晶二硫化モリブデン原子層状膜における超低電流強磁性変調","2022年第69回応用物理学会春季学術講演会",,,,,,2022,Mar.
"Kazuto Mizutani,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Edward Y. Chang,Kuniyuki Kakushima","Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement",,"Japanese Journal of Applied Physics (JJAP)",,"Vol. 61","No. 2",,2022,Feb.
"Takamasa KAWANAGO,Takahiro Matsuzaki,Ryosuke Kajikawa,Iriya Muneta,Takuya HOSHII,Kuniyuki Kakushima,Kazuo TSUTSUI,Hitoshi WAKABAYASHI","Experimental demonstration of high-gain CMOS Inverter operation at low Vdd down to 0.5 V consisting of WSe2 n/p FETs",,"Japanese Journal of Applied Physics (JJAP)",,"Vol. 61",,,2022,Feb.
"Ryo Ono,Shinya Imai,Yuta Kusama,Takuya Hamada,Masaya Hamada,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Emi Kano,Nobuyuki Ikarashi,Hitoshi Wakabayash","Elucidation of PVD MoS2 Film Formation Process and its Structure Focusing on Sub-Monolayer Region",,"Japanese Journal of Applied Physics (JJAP)",,"Vol. 61",,,2022,Feb.
"Takuya Hamada,Masaya Hamada,Taiga Horiguchi,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Tetsuya Tatsumi,Shigetaka Tomiya,Hitoshi Wakabayashi","High Seebeck Coefficient in PVD-WS2 Film with Grain-Size Enlargement",,"Japanese Journal of Applied Physics (JJAP)",,"Vol. 61",,,2022,Feb.