"’|‘º�Wˆê,•Ð–ì’B‹M,‰Í“Y—�‰›,Insung Seo,”Ñ�·‘ñŽk,�¬�X•¶•v,�¬àVŒ’ˆê,ŠÔ�£ˆê•F,�‡“c‹`�O,•½ŽR”Ž”V,’†’ÒŠ°","SiC(0001)Šî”Â�ã‚É�¬’·‚µ‚½ƒOƒ‰ƒtƒFƒ“‚Ö‚ÌFeƒCƒ“ƒ^�[ƒJƒŒ�[ƒVƒ‡ƒ“","“ú–{•¨—�Šw‰ï2023”N�t‹G‘å‰ï",,,,,,2023,Mar.
"’·”ö�r—C,‘å“à‘ñŽÀ,‰Z�¶“µ”ü,�D“c�F�K,”Ñ�·‘ñŽk,�¬�X•¶•v,’†’ÒŠ°,•½ŽR”Ž”V","Si(111)�ã3�~�ã3-Ag •\–Ê�ã‚ÌBi(110)’´”––Œ‚Ì“dŽq�ó‘Ô","“ú–{•¨—�Šw‰ï2023”N�t‹G‘å‰ï",,,,,,2023,Mar.
"‰Z�¶“µ”ü,’·”ö�r—C,•½ŽR”Ž”V,’†’ÒŠ°","(In,Bi)/Si(111)•\–Ê‚ÌŒ´Žq�\‘¢","“ú–{•¨—�Šw‰ï2023”N�t‹G‘å‰ï",,,,,,2023,Mar.
"T. Shirasawa,W. Voegeli,E. Arakawa,R. Ushioda,K. Nakatsuji,H. Hirayama","Structural transition at the subsurface of few-layer Bi(110) film during the growth",,"Physical Review Materials..",,"Volume 7",,"  033404",2023,Mar.
"M. Shimura,T. Shirasawa,R. Ushioda,K. Nakatsuji,H. Hirayama","Growth kinetics of a perfectly flat Bi(110) film during low-temperature deposition and subsequent annealing",,"Surface Science",,"Volume 728",,"  122210",2023,Feb.