@article{CTT100659580,
  author = {M. Kashiwano and J. Hirai and S. Ikeda and M. Fujimatsu and Y. Miyamoto},
  title = {High Open-Circuit Voltage Gain in Vertical InGaAs Channel Metal–Insulator–Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa},
  journal = {JPN. J. APPL. PHYS.},
  year = 2013,
}

@article{CTT100642251,
  author = {Atsushi Kato and Toru Kanazawa and Shunsuke Ikeda and Yosiharu Yonai and Yasuyuki Miyamoto},
  title = {Reduction of access resistance of InP/InGaAs composite-channel MOSFET with back source electrode},
  journal = {IEICE Trans. Electron.},
  year = 2012,
}

@article{CTT100628822,
  author = {R. Terao and T. Kanazawa and S. Ikeda and Y. Yonai and A. Kato and Y. Miyamoto},
  title = {InP/InGaAs Composite MOSFETs with Regrown Source and Al2O3 gate dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/μm},
  journal = {Applied Phys. Exp.},
  year = 2011,
}

@article{CTT100611953,
  author = {Toru Kanazawa and kazuya wakabayashi and Hisashi Saito and Ryousuke Terao and Shunsuke Ikeda and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {Submicron InP/InGaAs Composite-Channel Metal–Oxide–Semiconductor Field-Effect Transistor with Selectively Regrown n+-Source},
  journal = {Applied Physics Express},
  year = 2010,
}

@inproceedings{CTT100659766,
  author = {Masashi Kashiwano and Jun Hirai and Shunsuke Ikeda and Motohiko Fujimatsu and YASUYUKI MIYAMOTO},
  title = {半導体ドレイン層及び狭チャネルメサ幅による縦型 InGaAs チャネル MISFET の高電圧利得化},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100659714,
  author = {M. Kashiwano and J. Hirai and S. Ikeda and M. Fujimatsu and Y. Miyamoto},
  title = {High Open Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor using Heavily Doped Drain Region and Narrow Channel Mesa},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642429,
  author = {Masashi Kashiwano and Jun Hirai and Shunsuke Ikeda and Motohiko Fujimatsu and YASUYUKI MIYAMOTO},
  title = {半導体ドレイン層及び狭チャネルメサ幅による縦型InGaAsチャネルMISFETの高電圧利得化},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642428,
  author = {Masashi Kashiwano and Jun Hirai and Shunsuke Ikeda and Motohiko Fujimatsu and YASUYUKI MIYAMOTO},
  title = {GaN HEMT のソース・ドレイン間容量のデバイスシミュレーションによる解析},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642426,
  author = {Yosiharu Yonai and Toru Kanazawa and Shunsuke Ikeda and YASUYUKI MIYAMOTO},
  title = {InPエッチング異方性による微細InGaAsチャネルMOSFET},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642380,
  author = {Jun Hirai and Tomoki Kususaki and Shunsuke Ikeda and YASUYUKI MIYAMOTO},
  title = {Vertical InGaAs MOSFET with HfO2 gate},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100628829,
  author = {T. Kanazawa and R. Terao and S. Ikeda and Y. Miyamoto},
  title = {MOVPE-regrown source/drain regions for III-V MOSFETs with high drain current of 1.28 A/mm},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628832,
  author = {A. Kato and T. Kanazawa and S. Ikeda and Y. Yonai and YASUYUKI MIYAMOTO},
  title = {Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with A Back Source Electrode},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100642420,
  author = {Shunsuke Ikeda and Toru Kanazawa and YASUYUKI MIYAMOTO},
  title = {電子ランチャを持つInGaAs MOSFETにおけるヘテロ障壁高さ依存性},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100619804,
  author = {Toru Kanazawa and Ryousuke Terao and Yuutarou Yamaguchi and Shunsuke Ikeda and Yosiharu Yonai and atsushi kato and YASUYUKI MIYAMOTO},
  title = {裏面電極を有するⅢ－Ⅴ族量子井戸型チャネルMOSFET},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100642379,
  author = {Yosiharu Yonai and Toru Kanazawa and Shunsuke Ikeda and YASUYUKI MIYAMOTO},
  title = {High Drain Current (>2A/mm) InGaAs channel MOSFET at VD=0.5V with Shrinkage of Channel Length by InP Anisotropic Etching},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100612624,
  author = {Toru Kanazawa and Ryousuke Terao and Yuutarou Yamaguchi and Shunsuke Ikeda and Yosiharu Yonai and YASUYUKI MIYAMOTO},
  title = {InP/InGaAs MOSFET with Back-Electrode Structure Bonded on Si Substrate Using a BCB Adhesive Layer},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100612622,
  author = {Toru Kanazawa and Ryousuke Terao and Yuutarou Yamaguchi and Shunsuke Ikeda and Yosiharu Yonai and atsushi kato and YASUYUKI MIYAMOTO},
  title = {InP/InGaAs MOSFET with back-gate electrode bonded on Si substrate},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100612623,
  author = {Ryousuke Terao and Toru Kanazawa and Shunsuke Ikeda and Yosiharu Yonai and atsushi kato and YASUYUKI MIYAMOTO},
  title = {Submicron InP/InGaAs channel n-MOSFET with regrown InGaAs and Al2O3 gate dielectric},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610518,
  author = {T. Kanazawa and K. Wakabayashi and H. Saito and R. Terao and T. Tajima and S. Ikeda and Y. Miyamoto and K. Furuya},
  title = {Submicron InP/InGaAs composite channel MOSFETs with selectively regrown n+-source/drain buried in channel undercut},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610494,
  author = {Ryousuke Terao and Toru Kanazawa and Hisashi Saito and kazuya wakabayashi and Shunsuke Ikeda and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {Al2O3ゲート絶縁膜を用いたInP/InGaAsチャネル n-MOSFETの電気特},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610493,
  author = {kazuya wakabayashi and Toru Kanazawa and Hisashi Saito and Ryousuke Terao and Shunsuke Ikeda and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {再成長ソースを有するサブミクロンInP/InGaAs nMOSFETの電流電圧特性},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610505,
  author = {Toru Kanazawa and kazuya wakabayashi and Hisashi Saito and Ryousuke Terao and Tomonori Tajima and Shunsuke Ikeda and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {III-V族サブミクロンチャネルを有する高移動度MOSFET},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100597640,
  author = {Toru Kanazawa and kazuya wakabayashi and Hisashi Saito and Ryousuke Terao and Tomonori Tajima and Shunsuke Ikeda and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {InP/InGaAs composite channel MOSFET with Al2O3 gate dielectric},
  booktitle = {IEICE Technical Report, Electron Devices},
  year = 2010,
}

@inproceedings{CTT100610500,
  author = {K. Wakabayashi and T. Kanazawa and H. Saito and R. Terao and S. Ikeda and Y. Miyamoto and K. Furuya},
  title = {InP/In0.53Ga0.47As composite channel n-MOSFETwith heavily dopedregrown source/drain structure},
  booktitle = {},
  year = 2009,
}