@article{CTT100678925,
  author = {K. Ohsawa and A. Kato and T. Kanazawa and E. Uehara and Y. Miyamoto},
  title = {Channel thickness dependence on InGaAs MOSFET with InP source for high current density},
  journal = {IEICE Electronics Express},
  year = 2014,
}

@inproceedings{CTT100679168,
  author = {Y. Mishima and T. Kanazawa and H. Kinoshita and E. Uehara and Y. Miyamoto},
  title = {InGaAs tri-gate MOSFETs with MOVPE regrown source/drain},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100679181,
  author = {Yuichi Mishima and Toru Kanazawa and Haruki Kinoshita and Eiji Uehara and YASUYUKI MIYAMOTO},
  title = {再成長ソース/ドレインを有するInGaAsチャネルトライゲートMOSFET},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100679178,
  author = {Toru Kanazawa and Yuichi Mishima and Haruki Kinoshita and Eiji Uehara and YASUYUKI MIYAMOTO},
  title = {MOVPE再成長ソース/ドレインを有するInGaAsトライゲートMOSFET},
  booktitle = {IEICE technical report},
  year = 2014,
}

@inproceedings{CTT100678939,
  author = {K. Ohsawa and A. Kato and T. Sagai and T. Kanazawa and E. Uehara and Y. Miyamoto},
  title = {Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100679172,
  author = {Kazuto Ohsawa and atsushi kato and Takeru Sagai and Toru Kanazawa and Eiji Uehara and YASUYUKI MIYAMOTO},
  title = {高電流密度化に向けたInPソースを有するIII-V-OI InGaAs MOSFETのチャネル厚依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659719,
  author = {A. Kato and T. Kanazawa and Eiji Uehara and Y. Yonai and Y. Miyamoto},
  title = {Sub-50-nm InGaAs MOSFET with n-InP source on Si substrate},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659772,
  author = {Takeru Sagai and Eiji Uehara and Kazuto Ohsawa and YASUYUKI MIYAMOTO},
  title = {n-InP ソースを持つT ゲート構造 InGaAs-MOSFET の高周波特性},
  booktitle = {},
  year = 2013,
}