@article{CTT100909038,
  author = {Zhang Ruixian and Ho Hoang Huy and Takanori Shirokura and Pham Nam Hai and Quang Le and Brian York and Cherngye Hwang and Xiaoyong Liu and Michael Gribelyuk and Xiaoyu Xu and Son Le and Maki Maeda and Tuo Fan and Yu Tao and Hisashi Takano},
  title = {High spin Hall angle in BiSb topological insulator and perpendicularly magnetized CoFeB/MgO multilayers with metallic interfacial layers},
  journal = {Applied Physics Letters},
  year = 2024,
}

@article{CTT100905206,
  author = {Ho Hoang Huy and Zhang Ruixian and Takanori Shirokura and Shigeki Takahashi and Yoshiyuki Hirayama and Pham Nam Hai},
  title = {Integration of BiSb Topological Insulator and CoFeB/MgO With Perpendicular Magnetic Anisotropy Using an Oxide Interfacial Layer for Ultralow Power SOT-MRAM Cache Memory},
  journal = {IEEE Transactions on Magnetics},
  year = 2023,
}

@article{CTT100885313,
  author = {Ho Hoang Huy and Julian Sasaki and Nguyen Huynh Duy Khang and Pham Nam Hai and Q. LE and B. YORK and C. Hwang and X. LIU and M. GRIBELYUK and X. XU and S. LE and M. HO and H. TAKANO},
  title = {Large inverse spin Hall effect in BiSb topological insulator for 4 Tb/in2 magnetic recording technology},
  journal = {Applied Physics Letters},
  year = 2023,
}

@article{CTT100884250,
  author = {H. H. Huy and J. Sasaki and N. H. D. Khang and S. Namba and P. N. Hai and Q. Le and B. York and C. Hwang and X. Liu and M. Gribelyuk and X. Xu and S. Le and R. Nagabhirava and M. Ho and H. Takano},
  title = {Large spin Hall angle in sputtered BiSb topological insulator on top of various ferromagnets with in-plane magnetization for SOT reader application},
  journal = {IEEE Transactions on Magnetics},
  year = 2022,
}

@article{CTT100862848,
  author = {J. Sasaki and H. H. Huy and N. H. D. Khang and P. N. Hai and Q. Le and B. York and X. Liu and S. Le and C. Hwang and M. Ho and H. Takano},
  title = {Improvement of the effective spin Hall angle by inserting an interfacial layer in sputtered BiSb topological insulator (bottom)/ferromagnet with in-plane magnetization},
  journal = {IEEE Transactions on Magnetics},
  year = 2022,
}

@article{CTT100861132,
  author = {Tuo Fan and Nguyen Huynh Duy Khang and Takanori Shirokura and Ho Hoang Huy and Pham Nam Hai},
  title = {Low power spin–orbit torque switching in sputtered BiSb topological insulator/perpendicularly magnetized CoPt/MgO multilayers on oxidized Si substrate},
  journal = {Applied Physics Letters},
  year = 2021,
}

@inproceedings{CTT100922384,
  author = {H. H. Huy and L. Wentao and S. Takahashi and Y. Hirayama and Y. Kato and P. N. Hai},
  title = {Spin Hall effect in annealed BiSb topological thin films deposited on Si/SiOx substrates},
  booktitle = {},
  year = 2024,
}

@inproceedings{CTT100922383,
  author = {L. Wentao and H. H. Huy and S. Takahashi and Y. Hirayama and Y. Kato and P. N. Hai},
  title = {Growth and evaluation of highly textured BiSb(001) topological insulator  on Si/SiOx},
  booktitle = {},
  year = 2024,
}

@inproceedings{CTT100915796,
  author = {H. H. Huy and J. Sasaki and N. H. D. Khang and S. Namba and P. N. Hai and Q. Le and B. York and C. Hwang and X. Liu and M. Gribelyuk and X. Xu and S. Le and M. Ho and H. Takano},
  title = {Large inverse spin Hall effect in BiSb topological insulator for beyond 4 TB/In2 magnetic recording technology},
  booktitle = {},
  year = 2024,
}

@inproceedings{CTT100916626,
  author = {Z. Ruixian and H. H. Huy and Q. Le and B. York and C. Hwang and X. Liu and M. Gribelyuk and X. Xu and S. Le and M. Maeda and F. Tuo and Y. Tao and H. Takano and T. Shirokura and P. N. Hai},
  title = {High spin Hall angle in heterostructures of BiSb topological insulator and perpendicularly magnetized CoFeB/MgO multilayers with metallic interfacial layers},
  booktitle = {},
  year = 2024,
}

@inproceedings{CTT100908547,
  author = {Ruixian Zhang and Ho Hoang Huy and Takanori Shirokura and Pham Nam Hai and Quang Le and Brian R. York and Cherngye Hwang and Xiaoyong Liu and Xiaoyu Xu and Son Le and Michael Gribelyuk and Hisashi Takano and Maki Maeda and Fan Tuo and Yu Tao},
  title = {High spin Hall angle in BiSb topological insulator and perpendicularly magnetized CoFeB/MgO multilayers with metallic interfacial layers},
  booktitle = {},
  year = 2024,
}

@inproceedings{CTT100908551,
  author = {H. H. Huy and J. Sasaki and N. H. D. Khang and S. Namba and P. N. Hai},
  title = {Large inverse spin Hall effect in BiSb topological insulator and application to SOT magnetic sensor},
  booktitle = {},
  year = 2024,
}

@inproceedings{CTT100905211,
  author = {Ho Hoang Huy and Zhang Ruixian and Takanori Shirokura and Shigeki Takahashi and Yoshiyuki Hirayama and Pham Nam Hai},
  title = {Large spin Hall effect in BiSb topological insulator/CrOx/CoFeB/MgO with perpendicular magnetic anisotropy for ultralow power SOT-MRAM},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100900901,
  author = {Ho Hoang Huy and R. Zhang and T. Shirokura and S. Takahashi and Y. Hirayama and Pham Nam Hai},
  title = {Integration of BiSb topological insulator and CoFeB/MgO with perpendicular magnetic anisotropy using an oxide interfacial layer for ultralow power SOT-MRAM cache memory},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100900893,
  author = {B.R. York and Q. Le and X. Liu and S. Okamura and C. Hwang and M.A. Gribelyuk and S. Le and J. Liu and R. Simmons and M. Maeda and F. Tuo and Y. Tao and J. Ohno and H. Takano and P.N. Hai and H. H. Huy and S. Namba},
  title = {(Invited) High Thermal Reliability and High Spin Hall Angle Observed in SOT-Reader Thin Films Using BiSbX Topological Insulators},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100888691,
  author = {Ho Hoang Huy and Zhang Ruixian and Takanori Shirokura and Shigeki Takahashi and Yoshiyuki Hirayama and Pham Nam Hai},
  title = {Integration of BiSb topological insulator and CoFeB/MgO with perpendicular magnetic anisotropy using an oxide interfacial layer for ultralow power spin-orbit torque magnetic memory},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100884262,
  author = {Ho Hoang Huy and J. SASAKI and N. H. D. KHANG and Pham NAM HAI and Q. LE and B. YORK and C. Hwang and X. LIU and M. GRIBELYUK and X. XU and S. LE and M. HO and H. TAKANO},
  title = {Giant inverse spin Hall effect in BiSb topological insulator for 4 Tbpsi magnetic recording technology},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100881833,
  author = {Ho Hoang Huy and J. SASAKI and N. H. D. KHANG and Pham NAM HAI and Q. LE and B. YORK and C. Hwang and X. LIU and M. GRIBELYUK and X. XU and S. LE and M. HO and H. TAKANO},
  title = {Giant inverse spin Hall effect in BiSb topological insulator for SOT reader},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100879802,
  author = {Ho Hoang Huy and J. SASAKI and N. H. D. KHANG and Pham NAM HAI and Q. LE and B. YORK and X. LIU and M. GRIBELYUK and X. XU and S. LE and M. HO and H. TAKANO},
  title = {Giant inverse spin Hall effect in BiSb topological insulator-based SOT reader},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100879830,
  author = {B. York and P. Hai and Q. Le and C. Hwang and S. Okamura and M. Gribelyuk and X. Xu and K. Nguyen and H. Ho and J. Sasaki and X. Liu and S. Le and M. Ho and H. Takano},
  title = {High Spin Hall Angle doped Topological Insulators BiSbX using novel high resistive growth and migration barrier layers},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100879801,
  author = {H. H. Huy and J. Sasaki and N. H. D. Khang and S. Namba and P. N. Hai and Q. Le and B. York and C. Hwang and X. Liu and M. Gribelyuk and X. Xu and S. Le and R. Nagabhirava and M. Ho and H. Takano},
  title = {Large spin Hall angle in sputtered BiSb topological insulator on top of various ferromagnets with in-plane magnetization for SOT reader application},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100860872,
  author = {B. York and P. N. Hai and Q. Le and C. Hwang and Nguyen H.D. Khang and Ho Hoang Huy and J. Sasaki and X. Liu and S. Le and M. Ho and H. Takano},
  title = {The Practical Material Challenges Involved in using the Topological Insulator BiSb in a Spin Transfer Device},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100860873,
  author = {J. Sasaki and Ho Hoang Huy and Nguyen H.D. Khang and P. N. Hai and Q. Le and B. York and X. Liu and S. Le and C. Hwang and M. Ho and H. Takano},
  title = {High spin Hall angle in sputtered BiSb topological insulator (bottom)/ ferromagnet with in-plane magnetization on sapphire substrates},
  booktitle = {},
  year = 2021,
}