@book{CTT100673613,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and Nobuhiko Nishiyama and Yasuyuki Miyamoto and Takuo Tanaka and Shigehisa Arai},
  title = {Permeability Engineering of Semiconductor Photonic Devices},
  publisher = {Nova Science Publishers},
  year = 2015,
}

@article{CTT100800921,
  author = {Y. Miyamoto and T. Kanazawa and N. Kise and H. Kinoshita and K. Ohsawa},
  title = {Regrown Source/Drain in InGaAs Multi-Gate MOSFETs},
  journal = {J. Crystal Growth},
  year = 2019,
}

@article{CTT100800918,
  author = {W Zhang and T. Kanazawa and Y. Miyamoto},
  title = {Performance improvement of a p-MoS2/HfS2 van der Waals heterostructure tunnelling field-effect transistor by UV-O3 treatment},
  journal = {Apl. Phys. Exp},
  year = 2019,
}

@article{CTT100800892,
  author = {W Zhang and S. Netsu and T. Kanazawa and T. Amemiya and Y. Miyamoto},
  title = {Effect of increasing gate capacitance on the performance of a p-MoS2/HfS2 van der Waals heterostructure tunneling field-effect transistor},
  journal = {Jpn. J. Appl. Phys},
  year = 2019,
}

@article{CTT100766771,
  author = {Seiko Netsu and Toru Kanazawa and Teerayut Uwanno and Tomohiro Amemiya and Kosuke Nagashio and Yasuyuki Miyamoto},
  title = {Type-II HfS2/MoS2 Heterojunction Transistors},
  journal = {IEICE Transactions on Electronics},
  year = 2018,
}

@article{CTT100747594,
  author = {Tomohiro Amemiya and toru kanazawa and takuo hiratani and daisuke inoue and zhichen gu and satoshi yamasaki and tatsuhiro urakami and shigehisa arai},
  title = {Organic membrane photonic integrated circuits (OMPICs)},
  journal = {Optics Express},
  year = 2017,
}

@article{CTT100758305,
  author = {Tomohiro Amemiya and Toru Kanazawa and Satoshi Yamasaki and Shigehisa Arai},
  title = {Metamaterial Waveguide Devices for Integrated Optic},
  journal = {Materials},
  year = 2017,
}

@article{CTT100735623,
  author = {Toru Kanazawa and Tomohiro Amemiya and Vikrant Upadhyaya and Atsushi Ishikawa and Kenji Tsuruta and Takuo Tanaka and Yasuyuki Miyamoto},
  title = {Performance Improvement of HfS2 Transistors by Atomic Layer Deposition of HfO2},
  journal = {IEEE Transactions on Nanotechnology},
  year = 2017,
}

@article{CTT100741627,
  author = {Vikrant UPADHYAYA and Toru KANAZAWA and Yasuyuki MIYAMOTO},
  title = {Vacuum Annealing and Passivation of HfS2 FET for Mitigation of Atmospheric Degradation},
  journal = {IEICE Transactions on Electronics},
  year = 2017,
}

@article{CTT100735624,
  author = {Tomohiro Amemiya and Toru Kanazawa and Takuo Hiratani and SHIGEHISA ARAI and Tatsuhiro Urakami},
  title = {有機薄膜光集積回路},
  journal = {月刊OPTRONICS},
  year = 2017,
}

@article{CTT100722079,
  author = {Tomohiro Amemiya and Toru Kanazawa and Takuo Hiratani and Nobuhiko Nishiyama and SHIGEHISA ARAI and Tatsuhiro Urakami and Takuo Tanaka and Atsushi Ishikawa},
  title = {光学迷彩とメタマテリアルフィルム},
  journal = {光技術コンタクト},
  year = 2016,
}

@article{CTT100722080,
  author = {Toru Kanazawa and Tomohiro Amemiya and YASUYUKI MIYAMOTO},
  title = {二次元材料HfS2を用いたMOSトランジスタ},
  journal = {月刊機能材料},
  year = 2016,
}

@article{CTT100735791,
  author = {Nobukazu Kise and Haruki Kinoshita and Atsushi Yukimachi and Toru Kanazawa and Yasuyuki Miyamoto},
  title = {Fin width dependence on gate controllability of InGaAs channel FinFETs with regrown source/drain},
  journal = {Solid-State Electronics},
  year = 2016,
}

@article{CTT100709139,
  author = {Tomohiro Amemiya and Masato Taki and Toru Kanazawa and Takuo Hiratani and Shigehisa Arai},
  title = {(Invited paper) Transformation Physics and Camouflage},
  journal = {IEICE Transactions on Electronics},
  year = 2016,
}

@article{CTT100709138,
  author = {Toru Kanazawa and Tomohiro Amemiya and Atsushi Ishikawa and Vikrant Upadhyaya and Kenji Tsuruta and Takuo Tanaka and Yasuyuki Miyamoto},
  title = {Few Layer HfS2 FET},
  journal = {Scientific Reports},
  year = 2016,
}

@article{CTT100693012,
  author = {R Yamanaka and T. Kanazawa and E. Yagyu and Y. Miyamoto},
  title = {Normally-off AlGaN/GaN high-electron-mobility transistor using digital etching technique},
  journal = {Jpn. J. Appl.Phys.},
  year = 2015,
}

@article{CTT100682922,
  author = {Tomohiro Amemiya and Atsushi Ishikawa and Toru Kanazawa and JoonHyun Kang and Nobuhiko Nishiyama and Yasuyuki Miyamoto and Takuo Tanaka and Shigehisa Arai},
  title = {Permeability-controlled Optical Modulator with Tri-gate Metamaterial: Control of Permeability on InP-based Photonic Integration Platform},
  journal = {Scientific Reports},
  year = 2015,
}

@article{CTT100682920,
  author = {Tomohiro Amemiya and Masato Taki and Toru Kanazawa and Takuo Hiratani and Shigehisa Arai},
  title = {Optical Lattice Model Towards Nonreciprocal Invisibility Cloaking},
  journal = {IEEE Journal Quantum Electronics},
  year = 2015,
}

@article{CTT100678925,
  author = {K. Ohsawa and A. Kato and T. Kanazawa and E. Uehara and Y. Miyamoto},
  title = {Channel thickness dependence on InGaAs MOSFET with InP source for high current density},
  journal = {IEICE Electronics Express},
  year = 2014,
}

@article{CTT100642251,
  author = {Atsushi Kato and Toru Kanazawa and Shunsuke Ikeda and Yosiharu Yonai and Yasuyuki Miyamoto},
  title = {Reduction of access resistance of InP/InGaAs composite-channel MOSFET with back source electrode},
  journal = {IEICE Trans. Electron.},
  year = 2012,
}

@article{CTT100628822,
  author = {R. Terao and T. Kanazawa and S. Ikeda and Y. Yonai and A. Kato and Y. Miyamoto},
  title = {InP/InGaAs Composite MOSFETs with Regrown Source and Al2O3 gate dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/μm},
  journal = {Applied Phys. Exp.},
  year = 2011,
}

@article{CTT100611953,
  author = {Toru Kanazawa and kazuya wakabayashi and Hisashi Saito and Ryousuke Terao and Shunsuke Ikeda and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {Submicron InP/InGaAs Composite-Channel Metal–Oxide–Semiconductor Field-Effect Transistor with Selectively Regrown n+-Source},
  journal = {Applied Physics Express},
  year = 2010,
}

@article{CTT100672479,
  author = {T. Kanazawa and A. Morosawa and R. Fuji and T. Wada and M. Watanabe and M. Asada},
  title = {Suppression of Leakage Current of CdF<sub>2</sub>/CaF<sub>2</sub> Resonant Tunneling Diode Structures Grown on Si(100) Substrates by Nanoarea Local Epitaxy},
  journal = {Jpn. J. Appl. Phys.},
  year = 2007,
}

@article{CTT100672431,
  author = {T. Kanazawa and M. Watanabe and M. Asada},
  title = {Room temperature negative differential resistance of CdF<sub>2</sub>/CaF<sub>2</sub> double-barrier resonant tunneling diode structures grown on Si(100) substrates},
  journal = {Appl. Phys Lett.},
  year = 2007,
}

@inproceedings{CTT100822685,
  author = {M.Kitamura and T.Kanazawa and Y.Miyamoto},
  title = {Evaluation of fabricationmethod of InGaAs nanosheet},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100800847,
  author = {Wenlun Zhang and Toru Kanazawa and Minoru Kitamura and YASUYUKI MIYAMOTO},
  title = {UV-O3表面酸化によるHfS2 MOSFETの性能改善},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100800848,
  author = {Minoru Kitamura and Toru Kanazawa and YASUYUKI MIYAMOTO},
  title = {HSQを用いたInGaAsナノシート構造作製法評価},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100800854,
  author = {Wenlun Zhang and Netsu Seikou and Toru Kanazawa and Tomohiro Amemiya and YASUYUKI MIYAMOTO},
  title = {埋め込みNiバックゲートを用いたp-MoS2/HfS2トンネルFET},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800925,
  author = {W. Zhang and S. Netsu and T.Kanazawa and T. Amemiya and Y. Miyamoto},
  title = {p-MoS2/HfS2 van der Waals Heterostructure Transistor Using Ni Backgate Buried in HfO2 Dielectric},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800923,
  author = {Y.Miyamoto and T. Kanazawa and N. Kise and H. Kinoshita and Kazuto Ohsawa},
  title = {Regrown Source / Drain in InGaAs Multi-Gate MOSFET},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100768825,
  author = {Toru Kanazawa and Kazuto Ohsawa and Tomohiro Amemiya and Nobukazu Kise and Ryosuke Aonuma and Yasuyuki Miyamoto},
  title = {Fabrication of InGaAs Nanosheet Transistors with Regrown Source},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100759720,
  author = {Tomohiro Amemiya and Satoshi Yamasaki and Toru Kanazawa and Zhichen Gu and Daisuke Inoue and Atsushi Ishikawa and Nobuhiko Nishiyama and Takuo Tanaka and Tatsuhiro Urakami and Shigehisa Arai},
  title = {Infrared Invisibility Cloak Using Rolled Metamaterial Film},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100758296,
  author = {Tomohiro Amemiya and Satoshi Yamasaki and Keisuke Masuda and Hibiki Kagami and Zhichen Gu and Daisuke Inoue and Toru Kanazawa and Nobuhiko Nishiyama and Tatsuhiro Urakami and SHIGEHISA ARAI},
  title = {メタマテリアルフィルムを用いたMWIR迷彩},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100759540,
  author = {Toru Kanazawa and Kazuto Ohsawa and Tomohiro Amemiya and Nobukazu Kise and Ryousuke Aonuma and YASUYUKI MIYAMOTO},
  title = {InGaAsナノシートトランジスタの作製},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100758311,
  author = {Tomohiro Amemiya and Satoshi Yamasaki and Keisuke Masuda and Hibiki Kagami and Zhichen Gu and Daisuke Inoue and Toru Kanazawa and Nobuhiko Nishiyama and Tatsuhiro Urakami and SHIGEHISA ARAI},
  title = {メタマテリアルフィルムを用いた光学遮蔽},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100757917,
  author = {Toru Kanazawa and Yasuyuki Miyamoto},
  title = {Development of Field-Effect Transistor  Using 2D Layered Hafnium Disulfide},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100747615,
  author = {Kazuto Ohsawa and Toru Kanazawa and Nobukazu Kise and Tomohiro Amemiya and YASUYUKI MIYAMOTO},
  title = {InGaAsナノシートチャネルを持つマルチゲートMOSFETに向けた作製プロセス開発},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100747614,
  author = {Tomohiro Amemiya and Satoshi Yamasaki and Toru Kanazawa and Zhichen Gu and Daisuke Inoue and Atsushi Ishikawa and Nobuhiko Nishiyama and Takuo Tanaka and Tatsuhiro Urakami and SHIGEHISA ARAI},
  title = {メタマテリアルフィルムによる近赤外光学迷彩},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100747612,
  author = {Netsu Seikou and Toru Kanazawa and Tomohiro Amemiya and YASUYUKI MIYAMOTO},
  title = {HfS2/MoS2 ヘテロジャンクションの温度依存電流特性},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100747601,
  author = {Seiko Netsu and Toru Kanazawa and Vikrant Upadhyaya and Teerayut Uwanno and Tomohiro Amemiya and Kosuke Nagashio and Yasuyuki Miyamoto},
  title = {Type II HfS2/MoS2 heterojunction Tunnel FET},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100738414,
  author = {Tomohiro Amemiya and Toru Kanazawa and Takuo Hiratani and Daisuke Inoue and Zhichen Gu and Satoshi Yamasaki and Tatsuhiro Urakami and Shigehisa Arai},
  title = {Organic Membrane Photonic Waveguide with Metal Grating Couplers},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100735914,
  author = {Netsu Seikou and Toru Kanazawa and Vikrant Upadhyaya and ウワンノー ティーラユット and Tomohiro Amemiya and 長汐 晃輔 and YASUYUKI MIYAMOTO},
  title = {Type II 型 HfS2/MoS2ヘテロジャンクションを有するTFET},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100735619,
  author = {Tomohiro Amemiya and Satoshi Yamasaki and Toru Kanazawa and Takuo Hiratani and Zhichen Gu and Atsushi Ishikawa and Nobuhiko Nishiyama and Takuo Tanaka and Tatsuhiro Urakami and SHIGEHISA ARAI},
  title = {メタマテリアルフィルムを用いた近赤外光学迷彩の理論解析},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100735618,
  author = {Toru Kanazawa and Tomohiro Amemiya and Netsu Seikou and Vikrant Upadhyaya and Koichi Fukuda and YASUYUKI MIYAMOTO},
  title = {HfS2系トンネルトランジスタのデバイスシミュレーション},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100735598,
  author = {Tomohiro Amemiya and Satoshi Yamasaki and Toru Kanazawa and Atsushi Ishikawa and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and Takuo Tanaka and SHIGEHISA ARAI},
  title = {光回路とプラズモニックメタマテリアル},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100722098,
  author = {Tomohiro Amemiya and Satoshi Yamasaki and Toru Kanazawa and Takuo Hiratani and Junichi Suzuki and Nobuhiko Nishiyama and SHIGEHISA ARAI},
  title = {メタマテリアルを用いたSi 導波路型光バッファの提案},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100722100,
  author = {Tomohiro Amemiya and Toru Kanazawa and Takuo Hiratani and Daisuke Inoue and Zhichen Gu and Tatsuhiro Urakami and SHIGEHISA ARAI},
  title = {有機薄膜光集積回路：各素子の特性解析},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100722102,
  author = {Toru Kanazawa and Vikrant Upadhyaya and Tomohiro Amemiya and Atsushi Ishikawa and 鶴田 健二 and Takuo Tanaka and YASUYUKI MIYAMOTO},
  title = {HfO2パッシベーションによるHfS2 FETの特性改善},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100722083,
  author = {Toru Kanazawa and Tomohiro Amemiya and Vikrant Upadhyaya and Atsushi Ishikawa and Kenji Tsuruta and Takuo Tanaka and Yasuyuki Miyamoto},
  title = {Effect of the HfO2 passivation on HfS2 Transistors},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100725110,
  author = {Vikrant Upadhyaya and Toru Kanazawa and YASUYUKI MIYAMOTO},
  title = {Vacuum annealing and passivation of Hf<sub>2</sub> FET for mitigation of atmospheric degradation},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100709160,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and Nobuhiko Nishiyama and Yasuyuki Miyamoto and Tatsuhiro Urakami and Takuo Tanaka and Shigehisa Arai},
  title = {(Invited) Permeability Engineering in Optical Communication Devices},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100709159,
  author = {Tomohiro Amemiya and Toru Kanazawa and Tatsuhiro Urakami and Atsushi Ishikawa and Naoya Hojo and Akio Yasui and Nobuhiko Nishiyama and Takuo Tanaka and Shigehisa Arai},
  title = {Metafilm: Metamaterial Array Embedded in Organic Thin Film},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100725185,
  author = {Haruki Kinoshita and Nobukazu Kise and Atsushi Yukimachi and Toru Kanazawa and Yasuyuki Miyamoto},
  title = {Operation of 16-nm InGaAs channel multi-gate MOSFETs with regrown source/drain},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100725183,
  author = {Vikrant Upadhyaya and Toru Kanazawa and Yasuyuki Miyamoto},
  title = {Evaluation of electrical properties of HfS<sub>2</sub> thin flakes obtained by mechanical exfoliation},
  booktitle = {信学技報},
  year = 2016,
}

@inproceedings{CTT100709148,
  author = {Tomohiro Amemiya and Toru Kanazawa and Takuo Hiratani and Zhichen Gu and Naoya Hojo and 浦上 達宣 and SHIGEHISA ARAI},
  title = {有機薄膜光集積回路},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100709158,
  author = {Tomohiro Amemiya and Toru Kanazawa and 浦上 達宣 and Atsushi Ishikawa and Naoya Hojo and Akio Yasui and Nobuhiko Nishiyama and Takuo Tanaka and SHIGEHISA ARAI},
  title = {Metafilm : メタマテリアルを内包した有機薄膜フィルム},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100725184,
  author = {Haruki Kinoshita and Nobukazu Kise and Netsu Seikou and Toru Kanazawa and YASUYUKI MIYAMOTO},
  title = {再成長S/Dを有するInGaAsマルチゲートMOSFETのLch=16nm動作},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100740895,
  author = {Haruki Kinoshita and Nobukazu Kise and Netsu Seikou and Toru Kanazawa and YASUYUKI MIYAMOTO},
  title = {[22p-W541-5] 再成長S/Dを有するInGaAsマルチゲートMOSFETのLch=16nm動作},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100725116,
  author = {Upadhyaya Vikrant and kanazawa Toru and Miyamoto Yasuyuki},
  title = {Measures for mitigating environmental degradation of Two Dimensional Hafnium Disulfide Field Effect Transistor},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100709157,
  author = {Tomohiro Amemiya and Toru Kanazawa and Takuo Hiratani and Zhichen Gu and Naoya Hojo and Yuki Kuno and 浦上 達宣 and SHIGEHISA ARAI},
  title = {有機薄膜光集積回路},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100800887,
  author = {Haruki Kinoshita and Toru Kanazawa and Netsu Seikou and Yuichi Mishima and YASUYUKI MIYAMOTO},
  title = {再成長ソース/ドレインを有するInGaAsマルチゲートMOSFET作製プロセス},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100721938,
  author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and K. Ohsawa and Y. Mishima and M. Fujimatsu and K. Ohashi and S. Nestu and S. Iwata},
  title = {InGaAs channel for low supply voltage},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100709147,
  author = {Toru Kanazawa and Tomohiro Amemiya and Atsushi Ishikawa and Vikrant Upadhyaya and Takuo Tanaka and Kenji Tsuruta and Yasuyuki Miyamoto},
  title = {HfS2 Electric Double Layer Transistor with High Drain Current},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100721910,
  author = {H.Kinoshita and S.Netsu and Y.mishima and T.Kanazawa and Y.Miyamoto},
  title = {Fabrication of InGaAs channel multi-gate MOSFETs with MOVPE regrown source/drain},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100716504,
  author = {S. Netsu and T. Kanazawa and Y. Miyamoto},
  title = {Improvement of Interface Property of HfO2/Al2O3/In0.53Ga0.47As Using Nitrogen Plasma Cleaning and Hydrogen Annealing},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100677904,
  author = {Tomohiro Amemiya and Atsushi Ishikawa and Toru Kanazawa and Nobuhiko Nishiyama and Yasuyuki Miyamoto and Takuo Tanaka and Shigehisa Arai},
  title = {(Invited) Possibility of permeability control on InP-based photonic integration platform},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693222,
  author = {T. Kanazawa and T. Amemiya and A. Ishikawa and V. Upadhyaya and K. Tsuruta and T. Tanaka and Y. Miyamoto},
  title = {Fabrication of Thin-Film HfS2 FET},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100682919,
  author = {Tomohiro Amemiya and Atsushi Ishikawa and Toru Kanazawa and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and Takuo Tanaka and SHIGEHISA ARAI},
  title = {光通信素子における透磁率制御の可能性},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693238,
  author = {Haruki Kinoshita and Toru Kanazawa and Netsu Seikou and Yuichi Mishima and YASUYUKI MIYAMOTO},
  title = {再成長ソース/ドレインを有するInGaAsマルチゲートMOSFET作製プロセスに関する研究},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693239,
  author = {Netsu Seikou and Toru Kanazawa and YASUYUKI MIYAMOTO},
  title = {HfO2/Al2O3/In0.53Ga0.47As界 面に対する窒素プラズマクリーニング後の水素アニール効果に関する研究},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100682907,
  author = {Toru Kanazawa and Tomohiro Amemiya and Atsushi Ishikawa and Kenji Tsuruta and Takuo Tanaka and YASUYUKI MIYAMOTO},
  title = {薄膜HfS2 FET},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100682905,
  author = {Atsushi Ishikawa and Toru Kanazawa and Tomohiro Amemiya and Kenji Tsuruta and Takuo Tanaka and YASUYUKI MIYAMOTO},
  title = {機械的剥離法を用いたHfS2原子薄膜の作製と基礎物性の評価},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100679171,
  author = {R. Yamanaka and T. Kanazawa and E. Yagyu and Y. Miyamoto},
  title = {Normally-off AlGaN/GaN HEMT using Digital Etching Technique},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100693234,
  author = {Ryota Yamanaka and Toru Kanazawa and 柳生栄治 and YASUYUKI MIYAMOTO},
  title = {デジタルエッチングを用いたGaN HEMTのノーマリーオフ化},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674604,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and JoonHyun Kang and Zhichen Gu and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and Takuo Tanaka and SHIGEHISA ARAI},
  title = {［依頼講演］透磁率制御メタマテリアルを装荷した光変調器},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100693229,
  author = {YASUYUKI MIYAMOTO and Toru Kanazawa and Yosiharu Yonai and atsushi kato and Motohiko Fujimatsu and Masashi Kashiwano and Kazuto Ohsawa and Kazumi Ohashi},
  title = {低電圧/高速動作にむけたInGaAs MOSFETソース構造},
  booktitle = {IEICE Technical Report},
  year = 2014,
}

@inproceedings{CTT100661087,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and JoonHyun Kang and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and Takuo Tanaka and SHIGEHISA ARAI},
  title = {(Invited) Meta-photonics for Advanced InP-based Photonic Integration},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100679169,
  author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and K. Ohsawa and Y. Mishima and T. Irisawa and M. Oda and T. Tezuka},
  title = {(Invited) Growth Process for High Performance of InGaAs MOSFETs},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100679168,
  author = {Y. Mishima and T. Kanazawa and H. Kinoshita and E. Uehara and Y. Miyamoto},
  title = {InGaAs tri-gate MOSFETs with MOVPE regrown source/drain},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100679167,
  author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and A. Kato and M. Fujimatsu and M. Kashiwano and K. Ohsawa and K. Ohashi},
  title = {(Invited) InGaAs MOSFET Source Structures Toward High Speed/low Power Applications},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100664429,
  author = {Tomohiro Amemiya and Masato Taki and Toru Kanazawa and SHIGEHISA ARAI},
  title = {Asymmetric Invisibility Cloaking Theory Based on the Concept of Effective Electromagnetic Fields for Photons},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100665747,
  author = {Tomohiro Amemiya and Masato Taki and Toru Kanazawa and SHIGEHISA ARAI},
  title = {光子における有効電磁場を使った非対称光学迷彩},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100679181,
  author = {Yuichi Mishima and Toru Kanazawa and Haruki Kinoshita and Eiji Uehara and YASUYUKI MIYAMOTO},
  title = {再成長ソース/ドレインを有するInGaAsチャネルトライゲートMOSFET},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100679178,
  author = {Toru Kanazawa and Yuichi Mishima and Haruki Kinoshita and Eiji Uehara and YASUYUKI MIYAMOTO},
  title = {MOVPE再成長ソース/ドレインを有するInGaAsトライゲートMOSFET},
  booktitle = {IEICE technical report},
  year = 2014,
}

@inproceedings{CTT100679165,
  author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and A. Kato and K. Ohsawa and M. Oda and T. Irisawa and T. Tezuka},
  title = {Heavily doped epitaxially grown source in InGaAs MOSFET for high drain current density},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100664543,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and JoonHyun Kang and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and Takuo Tanaka and SHIGEHISA ARAI},
  title = {メタマテリアルを用いたInP系プラットフォームにおける透磁率制御},
  booktitle = {IEICE Technical Report},
  year = 2013,
}

@inproceedings{CTT100654650,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and Seiji Myoga and JoonHyun Kang and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and Takuo Tanaka and SHIGEHISA ARAI},
  title = {(Invited) Photonic metamaterials in semiconductor optical devices},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100678939,
  author = {K. Ohsawa and A. Kato and T. Sagai and T. Kanazawa and E. Uehara and Y. Miyamoto},
  title = {Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100679172,
  author = {Kazuto Ohsawa and atsushi kato and Takeru Sagai and Toru Kanazawa and Eiji Uehara and YASUYUKI MIYAMOTO},
  title = {高電流密度化に向けたInPソースを有するIII-V-OI InGaAs MOSFETのチャネル厚依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100679176,
  author = {YASUYUKI MIYAMOTO and Toru Kanazawa},
  title = {InGaAs MOSFETの現状と将来展望},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100653652,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and Seiji Myoga and Eijun Murai and Takahiko Shindo and J. Kang and Nobuhiko Nishiyama and Yasuyuki Miyamoto and Takuo Tanaka and Shigehisa Arai},
  title = {Electrically-driven Permeability-controlled Optical Modulator using Mach-Zehnder Interferometer with Metamaterial},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659719,
  author = {A. Kato and T. Kanazawa and Eiji Uehara and Y. Yonai and Y. Miyamoto},
  title = {Sub-50-nm InGaAs MOSFET with n-InP source on Si substrate},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100648390,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and Seiji Miyouga and Eijun Murai and Takahiko Shindou and JoonHyun Kang and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and Takuo Tanaka and SHIGEHISA ARAI},
  title = {微細金属構造をもつ導波路型光デバイスにおける相互作用距離の解析},
  booktitle = {第60回応用物理学関係連合講演会},
  year = 2013,
}

@inproceedings{CTT100659775,
  author = {atsushi kato and Yosiharu Yonai and Toru Kanazawa and YASUYUKI MIYAMOTO},
  title = {Si 基板上 InGaAs-MOSFET の微細化に関する研究},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100645875,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and Seiji Myoga and Eijun Murai and Takahiko Shindo and J. Kang and Nobuhiko Nishiyama and Yasuyuki Miyamoto and Takuo Tanaka and Shigehisa Arai},
  title = {Permeability-controlled Optical Modulator with Tri-gate Metamaterial},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659769,
  author = {YASUYUKI MIYAMOTO and Toru Kanazawa},
  title = {MOSFET低電圧化の為のInGaAs チャネル},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100639796,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and Seiji Miyouga and Eijun Murai and Takahiko Shindou and JoonHyun Kang and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and Takuo Tanaka and SHIGEHISA ARAI},
  title = {---},
  booktitle = {第73回秋季応用物理学会学術講演会},
  year = 2012,
}

@inproceedings{CTT100659767,
  author = {atsushi kato and Yosiharu Yonai and Toru Kanazawa and YASUYUKI MIYAMOTO},
  title = {Si 基板上 InGaAs-MOSFET の微細化に関する研究},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642426,
  author = {Yosiharu Yonai and Toru Kanazawa and Shunsuke Ikeda and YASUYUKI MIYAMOTO},
  title = {InPエッチング異方性による微細InGaAsチャネルMOSFET},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642425,
  author = {YASUYUKI MIYAMOTO and Yosiharu Yonai and Toru Kanazawa},
  title = {エヒ?タキシャル成長ソースによる InGaAs MOSFET の高電流密度化},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642418,
  author = {YASUYUKI MIYAMOTO and Yosiharu Yonai and Toru Kanazawa},
  title = {エピタキシャル成長ソースによるInGaAsMOSFETの高電流密度化},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642423,
  author = {YASUYUKI MIYAMOTO and Yosiharu Yonai and Toru Kanazawa},
  title = {InGaAs MOSFETの高電流密度化},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642417,
  author = {YASUYUKI MIYAMOTO and Yosiharu Yonai and Toru Kanazawa},
  title = {InGaAs MOSFETの高電流密度化},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100642377,
  author = {YASUYUKI MIYAMOTO and Hisashi Saito and Toru Kanazawa},
  title = {High-current-density InP ultrafine devices for high-speed operation},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628829,
  author = {T. Kanazawa and R. Terao and S. Ikeda and Y. Miyamoto},
  title = {MOVPE-regrown source/drain regions for III-V MOSFETs with high drain current of 1.28 A/mm},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100642421,
  author = {Atsushi Kato and Toru Kanazawa and YASUYUKI MIYAMOTO},
  title = {ソース裏面電極によるInP/InGaAsコンポジットチャネルMOSFETのアクセス抵抗低減},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100642420,
  author = {Shunsuke Ikeda and Toru Kanazawa and YASUYUKI MIYAMOTO},
  title = {電子ランチャを持つInGaAs MOSFETにおけるヘテロ障壁高さ依存性},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100642419,
  author = {YASUYUKI MIYAMOTO and Toru Kanazawa},
  title = {InP系化合物半導体を用いたMOSFETの技術動向},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628832,
  author = {A. Kato and T. Kanazawa and S. Ikeda and Y. Yonai and YASUYUKI MIYAMOTO},
  title = {Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with A Back Source Electrode},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100619804,
  author = {Toru Kanazawa and Ryousuke Terao and Yuutarou Yamaguchi and Shunsuke Ikeda and Yosiharu Yonai and atsushi kato and YASUYUKI MIYAMOTO},
  title = {裏面電極を有するⅢ－Ⅴ族量子井戸型チャネルMOSFET},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100642379,
  author = {Yosiharu Yonai and Toru Kanazawa and Shunsuke Ikeda and YASUYUKI MIYAMOTO},
  title = {High Drain Current (>2A/mm) InGaAs channel MOSFET at VD=0.5V with Shrinkage of Channel Length by InP Anisotropic Etching},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100619797,
  author = {Y. Miyamoto and H. Saito and T. Kanazawa},
  title = {Submicron-channel InGaAs MISFET with epitaxially grown source},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100612623,
  author = {Ryousuke Terao and Toru Kanazawa and Shunsuke Ikeda and Yosiharu Yonai and atsushi kato and YASUYUKI MIYAMOTO},
  title = {Submicron InP/InGaAs channel n-MOSFET with regrown InGaAs and Al2O3 gate dielectric},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100612622,
  author = {Toru Kanazawa and Ryousuke Terao and Yuutarou Yamaguchi and Shunsuke Ikeda and Yosiharu Yonai and atsushi kato and YASUYUKI MIYAMOTO},
  title = {InP/InGaAs MOSFET with back-gate electrode bonded on Si substrate},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100612624,
  author = {Toru Kanazawa and Ryousuke Terao and Yuutarou Yamaguchi and Shunsuke Ikeda and Yosiharu Yonai and YASUYUKI MIYAMOTO},
  title = {InP/InGaAs MOSFET with Back-Electrode Structure Bonded on Si Substrate Using a BCB Adhesive Layer},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610518,
  author = {T. Kanazawa and K. Wakabayashi and H. Saito and R. Terao and T. Tajima and S. Ikeda and Y. Miyamoto and K. Furuya},
  title = {Submicron InP/InGaAs composite channel MOSFETs with selectively regrown n+-source/drain buried in channel undercut},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610522,
  author = {Y. Miyamoto and T. Kanazawa and H. Saito},
  title = {InGaAs MISFET with epitaxially grown source},
  booktitle = {InGaAs MISFET with epitaxially grown source},
  year = 2010,
}

@inproceedings{CTT100610493,
  author = {kazuya wakabayashi and Toru Kanazawa and Hisashi Saito and Ryousuke Terao and Shunsuke Ikeda and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {再成長ソースを有するサブミクロンInP/InGaAs nMOSFETの電流電圧特性},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610505,
  author = {Toru Kanazawa and kazuya wakabayashi and Hisashi Saito and Ryousuke Terao and Tomonori Tajima and Shunsuke Ikeda and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {III-V族サブミクロンチャネルを有する高移動度MOSFET},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610494,
  author = {Ryousuke Terao and Toru Kanazawa and Hisashi Saito and kazuya wakabayashi and Shunsuke Ikeda and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {Al2O3ゲート絶縁膜を用いたInP/InGaAsチャネル n-MOSFETの電気特},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100597640,
  author = {Toru Kanazawa and kazuya wakabayashi and Hisashi Saito and Ryousuke Terao and Tomonori Tajima and Shunsuke Ikeda and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {InP/InGaAs composite channel MOSFET with Al2O3 gate dielectric},
  booktitle = {IEICE Technical Report, Electron Devices},
  year = 2010,
}

@inproceedings{CTT100591555,
  author = {Toru Kanazawa and Hisashi Saito and Kazuya Wakabayashi and Ryousuke Terao and Tomonori Tajima and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {Fabrication of InP/InGaAs Undoped Channel MOSFET with Selectively Regrown N<sup>+</sup>-InGaAs Source Region},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100610500,
  author = {K. Wakabayashi and T. Kanazawa and H. Saito and R. Terao and S. Ikeda and Y. Miyamoto and K. Furuya},
  title = {InP/In0.53Ga0.47As composite channel n-MOSFETwith heavily dopedregrown source/drain structure},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100591554,
  author = {Kazuya Wakabayashi and Toru Kanazawa and Hisashi Saito and Tomonori Tajima and Ryosuke Terao and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {I-V characteristics of undoped channel InP/InGaAs MOSFET with regrown source region},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100591551,
  author = {Toru Kanazawa and Hisashi Saito and kazuya wakabayashi and Tomonori Tajima and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {High mobility III-V MOSFET with n<sup>+</sup>-source regrown by MOSFET},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100610491,
  author = {kazuya wakabayashi and Toru Kanazawa and Hisashi Saito and Tomonori Tajima and Ryousuke Terao and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {「再成長ソースを有するアンドープチャネルInP/InGaAs MOSFETの電流特性},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100598415,
  author = {YASUYUKI MIYAMOTO and Toru Kanazawa and Hisashi Saito and KAZUHITO FURUYA},
  title = {InGaAs/InP MISFET with epitaxially grown source},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100583670,
  author = {Toru Kanazawa and KAZUHITO FURUYA and YASUYUKI MIYAMOTO and Hisashi Saito and kazuya wakabayashi and Tomonori Tajima},
  title = {InP/InGaAs-channel MOSFET with MOVPE Selective Regrown Source},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100576791,
  author = {Hisashi Saito and Toru Kanazawa and Yasuyuki Miyamoto and Kazuhito Furuya},
  title = {Fabrication of vertical InGaAs-MOSFET with heterostructure launcher and intrinsic channel},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100583674,
  author = {Toru Kanazawa and KAZUHITO FURUYA and YASUYUKI MIYAMOTO and Hisashi Saito and kazuya wakabayashi and Tomonori Tajima},
  title = {I-V characteristics of III-V MOSFET with MOVPE regrown source region},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100576984,
  author = {YASUYUKI MIYAMOTO and Toru Kanazawa},
  title = {III-V ナノデバイス},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100565410,
  author = {T. Kanazawa and H. Saito and K. Wakabayashi and Y. Miyamoto and K. Furuya},
  title = {Lateral Buried Growth of N+-InGaAs Source/Drain Region to Undercut InGaAs Channel Structure for High Drive Current N-type MOSFET},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100583676,
  author = {Toru Kanazawa and KAZUHITO FURUYA and YASUYUKI MIYAMOTO and Hisashi Saito and kazuya wakabayashi and Tomonori Tajima},
  title = {Lateral buried growth of n<sup>+</sup>-InGaAs source/drain region for high drive current III-V channel MOSFET},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100669864,
  author = {M. Watanabe and T. Kanazawa and M. Asada},
  title = {Transmission Electron Microscopy Analysis of CaF<sub>2</sub>/CdF<sub>2</sub>/CaF<sub>2</sub> Resonant Tunneling Diode Structures grown on Si(100) Substrate},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100669862,
  author = {T. Kanazawa and R. Fujii and T. Wada and Y. Suzuki and M. Watanabe and M. Asada},
  title = {Control of NDR Characteristics of CdF<sub>2</sub>/CaF<sub>2</sub> RTDs Using Nano-Area Local Growth on Si(100) Substrates},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100667986,
  author = {T. Kanazawa and R. Fujii and T. Wada and Y. Suzuki and M. Watanabe and M. Asada},
  title = {I-V characteristics of CdF<sub>2</sub>/CaF<sub>2</sub> resonant tunneling diodes on Si(100) substrate by nano-area local growth method},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100669838,
  author = {T. Kanazawa and A. Morosawa and M. Watanabe and M. Asada},
  title = {High peak-to-valley current ratio of CdF<sub>2</sub>/CaF<sub>2</sub> resonant tunneling diode grown on Si(100) substrates},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100667975,
  author = {MASAHIRO WATANABE and Toru Kanazawa and 浅田雅弘},
  title = {Growth temperature dependence of CdF<sub>2</sub>/CaF<sub>2</sub> resonant tunneling diode structures on Si(100) substrate},
  booktitle = {},
  year = 2004,
}

@inproceedings{CTT100669799,
  author = {M. Watanabe and T. Kanazawa and K. Jinen and M. Asada},
  title = {Negative Differential Resistance of CdF<sub>2</sub>/CaF<sub>2</sub> Resonant Tunneling Diode Grown on Si(100) Substrate},
  booktitle = {2004 Silicon Nanoelectronics Workshop,9-20},
  year = 2004,
}

@inproceedings{CTT100667965,
  author = {T. Kanazawa and M. Matsuda and M. Watanabe and M. Asada},
  title = {Structure dependence of negative differential resistance characteristics of CdF<sub>2</sub>/CaF<sub>2</sub> resonant tunneling diode on Si(100) substrate},
  booktitle = {},
  year = 2003,
}

@inproceedings{CTT100669705,
  author = {M. Watanabe and M. Matsuda and H. Fujioka and T. Kanazawa and M. Asada},
  title = {Memory Effect of CdF<sub>2</sub>/CaF<sub>2</sub> Resonant Tunneling Diode grown on p-type Silicon Substrate},
  booktitle = {},
  year = 2003,
}

@inproceedings{CTT100669704,
  author = {M. Watanabe and M. Matsuda and H. Fujioka and T. Kanazawa and M. Asada},
  title = {Structure Dependence of Negative Differential Resistance Characteristics of CdF<sub>2</sub>/CaF<sub>2</sub> Resonant Tunneling Diode grown by Local Epitaxy on Silicon},
  booktitle = {2003 Silicon Nanoelectronics Workshop, 8-07},
  year = 2003,
}

@inproceedings{CTT100667961,
  author = {T. Kanazawa and M. Matsuda and M. Watanabe and M. Asada},
  title = {Fabrication and characterization of CdF<sub>2</sub>/CaF<sub>2</sub> resonant tunneling diode on double step Si(100) 2°off substrate},
  booktitle = {},
  year = 2003,
}

@inproceedings{CTT100667959,
  author = {M. Matsuda and T. Kanazawa and M. Watanabe and M. Asada},
  title = {Memory effect due to charge and discharge of CdF<sub>2</sub>/CaF<sub>2</sub> resonant tunneling diode},
  booktitle = {},
  year = 2003,
}

@inproceedings{CTT100669701,
  author = {M. Watanabe and T. Ishikawa and M. Matsuda and T. Kanazawa and M. Asada},
  title = {Systematic variation of negative differential resistance characteristics of CdF<sub>2</sub>/CaF<sub>2</sub> Resonant Tunneling Diode on Si(111) grown by Nanoarea Local Epitaxy},
  booktitle = {The Second International Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics '02 (QNN '02), Tu4-3},
  year = 2002,
}

@inproceedings{CTT100669700,
  author = {M. Watanabe and T. Ishikawa and M. Matsuda and T. Kanazawa and M. Asada},
  title = {Room Temperature Negative Differential Resistance of CdF<sub>2</sub>/CaF<sub>2</sub> Resonant Tunneling Diode grown on Si using Nanoarea Local Epitaxy},
  booktitle = {26th International Conference on the Physics of Semiconductors, P157},
  year = 2002,
}

@inproceedings{CTT100667914,
  author = {Toru Kanazawa and M. Matsuda and T. Ishikawa and T. Kanazawa and M. Watanabe and M. Asada},
  title = {Fabrication and characterization of CdF<sub>2</sub>/CaF<sub>2</sub> resonant tunneling diode on Si(100) substrate},
  booktitle = {},
  year = 2002,
}

@misc{CTT100672513,
  author = {T. Kanazawa and A. Morosawa and R. Fujii and T. Wata and M. Watanabe and M. Asada},
  title = {Fluoride based Resonant Tunneling Diode on Si(100) substrate using Nanoarea Local Growth},
  year = 2006,
}

@misc{CTT100596206,
  author = {Toru Kanazawa},
  title = {Si(100)基板上CaF2/CdF2ヘテロ構造を用いた共鳴トンネル集積デバイスの基礎研究},
  year = 2007,
}

@misc{CTT100808492,
  author = {Tomohiro Amemiya and Toru Kanazawa and SHIGEHISA ARAI},
  title = {有機薄膜光集積回路},
  howpublished = {RegisteredPatent},
  year = 2021,
  month  = {},
  note   = {特願2017-564161(2017/01/13), 再表2017/130744(2018/11/22), 特許第6817634号(2021/01/04)}
}


@misc{CTT100770013,
  author = {Tomohiro Amemiya and Yuya Shoji and SHIGEHISA ARAI and Toru Kanazawa and Nobuhiko Nishiyama and Tetsuya MIZUMOTO},
  title = {光バッファ素子構造、その製造方法、およびその解析方法},
  howpublished = {PublishedPatent},
  year = 2018,
  month  = {},
  note   = {特願2016-164148(2016/08/24), 特開2018-031896(2018/03/01)}
}


@misc{CTT100710319,
  author = {YASUYUKI MIYAMOTO and Ryota Yamanaka and Toru Kanazawa},
  title = {半導体装置の製造方法
},
  howpublished = {PublishedPatent},
  year = 2016,
  month  = {},
  note   = {特願2014-174229(2014/08/28), 特開2016-051722(2016/04/11)}
}


@misc{CTT100677655,
  author = {YASUYUKI MIYAMOTO and Masashi Kashiwano and Toru Kanazawa},
  title = {電界効果トランジスタ},
  howpublished = {PublishedPatent},
  year = 2014,
  month  = {},
  note   = {特願2013-001907(2013/01/09), 特開2014-135359(2014/07/24)}
}


@misc{CTT100657647,
  author = {YASUYUKI MIYAMOTO and Toru Kanazawa},
  title = {電界効果トランジスタ},
  howpublished = {PublishedPatent},
  year = 2013,
  month  = {},
  note   = {特願2011-165385(2011/07/28), 特開2013-030604(2013/02/07)}
}




@phdthesis{CTT100596206,
  author = {Toru Kanazawa},
  title = {Si(100)基板上CaF2/CdF2ヘテロ構造を用いた共鳴トンネル集積デバイスの基礎研究},
  school = {Tokyo Institute of Technology},
  year = 2007,
}