@book{CTT100673613,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and Nobuhiko Nishiyama and Yasuyuki Miyamoto and Takuo Tanaka and Shigehisa Arai},
  title = {Permeability Engineering of Semiconductor Photonic Devices},
  publisher = {Nova Science Publishers},
  year = 2015,
}

@book{CTT100659565,
  author = {芝原 健太郎 and YASUYUKI MIYAMOTO and Ken Uchida},
  title = {タウア・ニン 最新VLSIの基礎 第二版},
  publisher = {丸善},
  year = 2013,
}

@book{CTT100628840,
  author = {YASUYUKI MIYAMOTO},
  title = {グリーンナノテクノロジー―環境・エネルギー問題に挑戦する人々},
  publisher = {日刊工業新聞社},
  year = 2011,
}

@book{CTT100577013,
  author = {YASUYUKI MIYAMOTO},
  title = {電子デバイス},
  publisher = {培風館},
  year = 2009,
}

@book{CTT100469948,
  author = {YASUYUKI MIYAMOTO},
  title = {タウア・ニン　最新VLSIの基礎　(共訳)},
  publisher = {丸善},
  year = 2002,
}

@book{CTT100469943,
  author = {YASUYUKI MIYAMOTO},
  title = {Semiconductor Lasers and Photonic Integrated Circuits},
  publisher = {Chapman & Hall},
  year = 1994,
}

@article{CTT100887491,
  author = {J. Kotani and K. Makiyama and T. Ohki and S. Ozaki and N. Okamoto and Y. Minoura and M. Sato and N. Nakamura and Y. Miyamoto},
  title = {High-Power-Density InAlGaN/GaN HEMT using InGaN back barrier for W-band amplifiers},
  journal = {ELECTRON. LETT.},
  year = 2023,
}

@article{CTT100887487,
  author = {Y. Ito and S. Tamai and T. Hoshi and T. Gotow and Y. Miyamoto},
  title = {Dependence of Process Damage on GaN Channel Thickness in AlGaN/GaN High-electron-mobility Transistors with Back-barrier Layers},
  journal = {JPN. J. APPL. PHYS.},
  year = 2023,
}

@article{CTT100875016,
  author = {YASUYUKI MIYAMOTO and Takahiro Gotow},
  title = {GaN HEMTでの二次元電子ガスキャリヤ濃度と ゲートドレイン間リーク電流理論計算},
  journal = {電気学会論文誌C},
  year = 2022,
}

@article{CTT100845762,
  author = {T. Aota and A. Hayasaka and I. Makabe and S. Yoshida and T. Gotow and Y. Miyamoto},
  title = {Wet etching for isolation of N-polar GaN HEMT structure by electrodeless photo-assisted electrochemical reaction},
  journal = {Japanese Journal of Applied Physics},
  year = 2021,
}

@article{CTT100842262,
  author = {Moataz Eissa and Takuya Mitarai and Tomohiro Amemiya and Yasuyuki Miyamoto and Nobuhiko Nishiyama},
  title = {Fabrication of Si photonic waveguides by electron beam lithography using improved proximity effect correction},
  journal = {Japanese Journal of Applied Physics},
  year = 2020,
}

@article{CTT100830305,
  author = {Yasuyuki Miyamoto and Takahiro Gotow},
  title = {Simulation of short channel effect in GaN HEMT with a combined thin undoped channel and semi-insulating layer},
  journal = {IEICE Transactions on Electronics},
  year = 2020,
}

@article{CTT100822681,
  author = {K. Fukuda and N. Nogami and S. Kunisada and Y. Miyamoto},
  title = {Circuit speedoriented device design scheme for GaAsSb / InGaAs double gatehetero-junction tunnel FETs},
  journal = {Jpn. J. Appl. Phys.},
  year = 2020,
}

@article{CTT100800921,
  author = {Y. Miyamoto and T. Kanazawa and N. Kise and H. Kinoshita and K. Ohsawa},
  title = {Regrown Source/Drain in InGaAs Multi-Gate MOSFETs},
  journal = {J. Crystal Growth},
  year = 2019,
}

@article{CTT100800918,
  author = {W Zhang and T. Kanazawa and Y. Miyamoto},
  title = {Performance improvement of a p-MoS2/HfS2 van der Waals heterostructure tunnelling field-effect transistor by UV-O3 treatment},
  journal = {Apl. Phys. Exp},
  year = 2019,
}

@article{CTT100800916,
  author = {K. Hotta and Y. Tomizuka and K. Itagaki and I. Makabe and S. Yoshida and Y. Miyamoto},
  title = {Annealing temperature dependence of alloy contact for N-polar GaN HEMT structure},
  journal = {Jpn. J. Appl. Phys},
  year = 2019,
}

@article{CTT100800893,
  author = {R. Aonuma and N. Kise and Y. Miyamoto},
  title = {GaAsSb/InGaAs double-gate vertical tunnel FET with a subthreshold slope of 56 mV/dec at room temperature},
  journal = {Jpn. J. Appl. Phys.},
  year = 2019,
}

@article{CTT100800892,
  author = {W Zhang and S. Netsu and T. Kanazawa and T. Amemiya and Y. Miyamoto},
  title = {Effect of increasing gate capacitance on the performance of a p-MoS2/HfS2 van der Waals heterostructure tunneling field-effect transistor},
  journal = {Jpn. J. Appl. Phys},
  year = 2019,
}

@article{CTT100766771,
  author = {Seiko Netsu and Toru Kanazawa and Teerayut Uwanno and Tomohiro Amemiya and Kosuke Nagashio and Yasuyuki Miyamoto},
  title = {Type-II HfS2/MoS2 Heterojunction Transistors},
  journal = {IEICE Transactions on Electronics},
  year = 2018,
}

@article{CTT100800891,
  author = {S. Netsu and M. Hellenbrand and C. B. Zota and Y. Miyamoto and E. Lind},
  title = {A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs},
  journal = {IEEE Journal of the Electron Devices Society},
  year = 2018,
}

@article{CTT100735623,
  author = {Toru Kanazawa and Tomohiro Amemiya and Vikrant Upadhyaya and Atsushi Ishikawa and Kenji Tsuruta and Takuo Tanaka and Yasuyuki Miyamoto},
  title = {Performance Improvement of HfS2 Transistors by Atomic Layer Deposition of HfO2},
  journal = {IEEE Transactions on Nanotechnology},
  year = 2017,
}

@article{CTT100741627,
  author = {Vikrant UPADHYAYA and Toru KANAZAWA and Yasuyuki MIYAMOTO},
  title = {Vacuum Annealing and Passivation of HfS2 FET for Mitigation of Atmospheric Degradation},
  journal = {IEICE Transactions on Electronics},
  year = 2017,
}

@article{CTT100738837,
  author = {K. Ohsawa and S. Netsu and N. Kise and S. Noguchi and Y. Miyamoto},
  title = {Dependence of electron mobility on gate voltage sweeping width and deposition temperature in MOSFETs with HfO2/Al2O3/InGaAs gate stacks},
  journal = {Jpn. J. Appl. Phys.},
  year = 2017,
}

@article{CTT100738834,
  author = {A. Yukimachi and Y. Miyamoto},
  title = {InGaAs/AlAs triple-barrier p-i-n junction diode for realizing superlattice-based FET for steep slope},
  journal = {Jpn. J. Appl. Phys.},
  year = 2016,
}

@article{CTT100738833,
  author = {Y. Miyamoto},
  title = {Recent progress in compound semiconductor electron devices (Review paper)},
  journal = {IEICE Electronics Express},
  year = 2016,
}

@article{CTT100735791,
  author = {Nobukazu Kise and Haruki Kinoshita and Atsushi Yukimachi and Toru Kanazawa and Yasuyuki Miyamoto},
  title = {Fin width dependence on gate controllability of InGaAs channel FinFETs with regrown source/drain},
  journal = {Solid-State Electronics},
  year = 2016,
}

@article{CTT100722080,
  author = {Toru Kanazawa and Tomohiro Amemiya and YASUYUKI MIYAMOTO},
  title = {二次元材料HfS2を用いたMOSトランジスタ},
  journal = {月刊機能材料},
  year = 2016,
}

@article{CTT100738830,
  author = {W. Lin and S.Iwata and K. Fukuda and Y. Miyamoto},
  title = {Scaling limit for InGaAs/GaAsSb heterojunction double-gate tunnel FETs from the viewpoint of direct band-to-band tunneling from source to drain induced off-characteristics deterioration},
  journal = {Jpn. J. Appl. Phys.},
  year = 2016,
}

@article{CTT100738795,
  author = {Shinjiro Iwata and Kazumi Ohashi and Wenbo Lin and Koichi Fukuda and YASUYUKI MIYAMOTO},
  title = {GaAsSb/InGaAsダブルゲートンネルFET におけるソースおよびドレイン不純物濃度依存性},
  journal = {電気学会論文誌C},
  year = 2016,
}

@article{CTT100738793,
  author = {YASUYUKI MIYAMOTO},
  title = {III-V族チャネルを持つMOSFET (特集解説)},
  journal = {電気学会論文誌C},
  year = 2016,
}

@article{CTT100709138,
  author = {Toru Kanazawa and Tomohiro Amemiya and Atsushi Ishikawa and Vikrant Upadhyaya and Kenji Tsuruta and Takuo Tanaka and Yasuyuki Miyamoto},
  title = {Few Layer HfS2 FET},
  journal = {Scientific Reports},
  year = 2016,
}

@article{CTT100715509,
  author = {F. A. Fatah and Y.-C. Lin and R.-X. Liu and K.-C. Yang and T.-W. Lin and H.-T. Hsu and J.-H. Yang and Y. Miyamoto and H. Iwai and C. Hu and S. Salahuddin and E. Y. Chang},
  title = {A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/ In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications,},
  journal = {Applied Physics Express},
  year = 2016,
}

@article{CTT100715190,
  author = {F. A. Fatah and Y.-C. Lin and T.-Y. Lee and K.-C. Yang and R.-X. Liu and J.-R. Chan and H.-T. Hsu and Y. Miyamoto and E. Y. Chang},
  title = {Potential of Enhancement Mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for Using in High-Speed and Low-Power Logic Applications},
  journal = {Solid State Sci. Technol},
  year = 2015,
}

@article{CTT100693012,
  author = {R Yamanaka and T. Kanazawa and E. Yagyu and Y. Miyamoto},
  title = {Normally-off AlGaN/GaN high-electron-mobility transistor using digital etching technique},
  journal = {Jpn. J. Appl.Phys.},
  year = 2015,
}

@article{CTT100693011,
  author = {K. Ohashi and M. Fujimatsu and S. Iwata and Y. Miyamoto},
  title = {Body width dependence of subthreshold slope and on-current in GaAsSb/InGaAs double-gate vertical tunnel FETs},
  journal = {Jpn. J. Appl.Phys.},
  year = 2015,
}

@article{CTT100682922,
  author = {Tomohiro Amemiya and Atsushi Ishikawa and Toru Kanazawa and JoonHyun Kang and Nobuhiko Nishiyama and Yasuyuki Miyamoto and Takuo Tanaka and Shigehisa Arai},
  title = {Permeability-controlled Optical Modulator with Tri-gate Metamaterial: Control of Permeability on InP-based Photonic Integration Platform},
  journal = {Scientific Reports},
  year = 2015,
}

@article{CTT100678925,
  author = {K. Ohsawa and A. Kato and T. Kanazawa and E. Uehara and Y. Miyamoto},
  title = {Channel thickness dependence on InGaAs MOSFET with InP source for high current density},
  journal = {IEICE Electronics Express},
  year = 2014,
}

@article{CTT100676855,
  author = {Y. Atsumi and N. Taksatorn and N. Nishiyama and Y. Miyamoto and S. Arai},
  title = {Loss reduction of Si optical waveguides by beam step-size fracturing technique in electron beam lithography},
  journal = {Japanese Journal of Applied Physics},
  year = 2014,
}

@article{CTT100678923,
  author = {M. Yamada and K. Uchida and Y. Miyamoto},
  title = {Delay time component of InGaAs MOSFET caused by dynamic source resistance},
  journal = {IEICE Trans. Electron},
  year = 2014,
}

@article{CTT100659580,
  author = {M. Kashiwano and J. Hirai and S. Ikeda and M. Fujimatsu and Y. Miyamoto},
  title = {High Open-Circuit Voltage Gain in Vertical InGaAs Channel Metal–Insulator–Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa},
  journal = {JPN. J. APPL. PHYS.},
  year = 2013,
}

@article{CTT100659581,
  author = {K. Hayashi and Y. Yamaguchi and T. Oishi and H. Ostuka and K. Yamanaka and M. Nakayama and Y. Miyamoto},
  title = {Mechanism Study of Gate Leakage Current for AlGaN/GaN HEMT Structure Under High Reverse Bias by TSB Model and TCAD Simulation},
  journal = {JPN. J. APPL. PHYS.},
  year = 2013,
}

@article{CTT100659702,
  author = {Takafumi Uesawa and YASUYUKI MIYAMOTO},
  title = {縦型 ゲート制御ホットエレクトロントランジスタの新しい遮断周波数算出方法},
  journal = {電子情報通信学会論文誌},
  year = 2013,
}

@article{CTT100659703,
  author = {林 一夫 and 大石 敏之 and 加茂 宣卓 and Yuutarou Yamaguchi and 大塚 浩志 and 山中 宏治 and 中山 正敏 and YASUYUKI MIYAMOTO},
  title = {AlGaN/GaN HEMTにおけるドレーン漏れ電流の解析},
  journal = {電子情報通信学会論文誌. C, エレクトロニクス},
  year = 2013,
}

@article{CTT100659578,
  author = {C.-H. Yu and H.-T. Hsu and C.-Y. Chiang and C.-I Kuo and Y. Miyamoto and E. Y. Chang},
  title = {Performance Evaluation of InGaSb/AlSb P-Channel High-Hole-Mobility Transistor Faricated Using BCl3 Dry Etching},
  journal = {JPN. J. APPL. PHYS.},
  year = 2013,
}

@article{CTT100659579,
  author = {E. Y. Chang and C.-I Kuo and H.-T. Hsu and C.-Y. Chiang and Y. Miyamoto},
  title = {InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications},
  journal = {Appl. Phys. Exp.},
  year = 2013,
}

@article{CTT100642251,
  author = {Atsushi Kato and Toru Kanazawa and Shunsuke Ikeda and Yosiharu Yonai and Yasuyuki Miyamoto},
  title = {Reduction of access resistance of InP/InGaAs composite-channel MOSFET with back source electrode},
  journal = {IEICE Trans. Electron.},
  year = 2012,
}

@article{CTT100642252,
  author = {Naoaki Takebe and Y. Miyamoto},
  title = {Reduction of base-collector capacitance in InP/InGaAs DHBT with buried SiO2 wires},
  journal = {IEICE Trans. Electron.},
  year = 2012,
}

@article{CTT100642250,
  author = {Hisashi Saito and Y. Miyamoto},
  title = {Reduction of Output Conductance in Vertical InGaAs Channel Metal?Insulator?Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region},
  journal = {Applied Phys. Exp.},
  year = 2012,
}

@article{CTT100659577,
  author = {F. Fatah and C.-I Kuo and H.-T. Hsu and C.-Y. Chiang and C.-Y. Hsu and Y. Miyamoto and E. Y. Chang},
  title = {Bias-Dependent Radio Frequency Performance for 40 nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz},
  journal = {JPN. J. APPL. PHYS.},
  year = 2012,
}

@article{CTT100628828,
  author = {N. Takebe and T. Kobayashi and H. Suzuki and Y. Miyamoto and K. Furuya},
  title = {Fabrication of InP/InGaAs DHBTs with buried SiO2 wires},
  journal = {IEICE Trans. Electron.},
  year = 2011,
}

@article{CTT100619794,
  author = {M. Yamada and T. Uesawa and Y. Miyamoto and K. Furuya},
  title = {Deviation from Proportional Relationship between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operating at High Current Density},
  journal = {IEEE Electron Device Lett.},
  year = 2011,
}

@article{CTT100628822,
  author = {R. Terao and T. Kanazawa and S. Ikeda and Y. Yonai and A. Kato and Y. Miyamoto},
  title = {InP/InGaAs Composite MOSFETs with Regrown Source and Al2O3 gate dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/μm},
  journal = {Applied Phys. Exp.},
  year = 2011,
}

@article{CTT100619792,
  author = {H. Saito and Y. Matsumoto and Y. Miyamoto and K. Furuya},
  title = {Vertical InGaAs Channel Metal–Insulator–Semiconductor Field Effect Transistor with High Current Density},
  journal = {Jpn. J. Appl. Phys.},
  year = 2011,
}

@article{CTT100790952,
  author = {Wang and C.-T. and Kuo and C.-I. and Hsu and H.-T. and Chang, E.Y. and Hsu and L.-H. and Lim and W.-C. and YASUYUKI MIYAMOTO},
  title = {Flip-chip packaging of low-noise metamorphic high electron mobility transistors on low-cost organic substrate},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100611953,
  author = {Toru Kanazawa and kazuya wakabayashi and Hisashi Saito and Ryousuke Terao and Shunsuke Ikeda and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {Submicron InP/InGaAs Composite-Channel Metal–Oxide–Semiconductor Field-Effect Transistor with Selectively Regrown n+-Source},
  journal = {Applied Physics Express},
  year = 2010,
}

@article{CTT100610516,
  author = {H. Saito and Y. Miyamoto and K. Furuya},
  title = {Fabrication of Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor with a 15-nm-wide Mesa Structure and a Drain Current Density of 7 MA/cm2},
  journal = {Applied Phys. Exp.},
  year = 2010,
}

@article{CTT100610508,
  author = {C-I. Kuo and H-T. Hsu and Y-L. Chen and C-Y. Wu and E. Y. Chang and Y. Miyamoto and W-C. Tsern and K. C. Sahoo},
  title = {RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (InxGa1 - xAs)m/(InAs)n Superlattice-Channel Structure for Millimeter-Wave Applications},
  journal = {IEEE Electron Device Letters},
  year = 2010,
}

@article{CTT100610507,
  author = {Y. Miyamoto and S. Takahashi and T. Kobayashi and Hiroyuki Suzuki and K. Furuya},
  title = {Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector},
  journal = {IEICE Trans. Electron.},
  year = 2010,
}

@article{CTT100600644,
  author = {Takafumi Uesawa and Masayuki Yamada and Yasuyuki Miyamoto and Kazuhito Furuya},
  title = {Monte Carlo Analysis of Base Transit Times of InP/GaInAs Heterojunction Bipolar Transistors with Ultrathin Graded Bases},
  journal = {Japanese Journal of Applied Physics},
  year = 2010,
}

@article{CTT100601396,
  author = {Chia-Ta Chang and Heng-Tung  Hsu and Edward Yi Chang and Chien-I Kuo and Jui-Chien  Huang and Chung-Yu  Lu and Yasuyuki Miyamoto},
  title = {30-GHz Low-Noise Performance of 100-nm-Gate-Recessed n-GaN/AlGaN/GaN HEMTs},
  journal = {IEEE Electron Device Letters},
  year = 2010,
}

@article{CTT100790868,
  author = {Kuo and C.-I. and Hsu and H.-T. and Chang, E.Y. and YASUYUKI MIYAMOTO and Wu and C.-Y. and Chen and Y.-L. and Hsiao and Y.-L.},
  title = {DC and RF performance improvement of 70nm quantum well field effect transistor by narrowing source - drain spacing technology},
  journal = {Japanese Journal of Applied Physics},
  year = 2010,
}

@article{CTT100598425,
  author = {Chia-Yuan Chang and Heng-Tung Hsu and Edward Yi Chang and Hai-Dang Trinh and Yasuyuki Miyamoto},
  title = {InAs-Channel Metal-Oxide-Semiconductor HEMTs  with Atomic-Layer-Deposited Al2O3 Gate Dielectric},
  journal = {Electrochemical and Solid-State Letters,},
  year = 2009,
}

@article{CTT100576961,
  author = {Chia-Yuan  Chang and Heng-Tung  Hsu and Edward Yi  Chang and YASUYUKI MIYAMOTO},
  title = {InAs-Channel High-Electron-Mobility Transistors for Ultralow-Power Low Noise Amplifier Applications},
  journal = {Japanese Journal of Applied Physics},
  year = 2009,
}

@article{CTT100576788,
  author = {Hisashi Saito and Yasuyuki Miyamoto and Kazuhito Furuya},
  title = {Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain},
  journal = {Applied Physics Express},
  year = 2009,
}

@article{CTT100598413,
  author = {So Nishimura and KAZUHITO FURUYA and YASUYUKI MIYAMOTO},
  title = {Design and Simulation of Hot-Electron Diffraction Oservation by Scanning Probe – Quantitative Evaluation of Observation Possibility –},
  journal = {Jpn. J. Appl.Phys.},
  year = 2008,
}

@article{CTT100598411,
  author = {So Nishimura and KAZUHITO FURUYA and YASUYUKI MIYAMOTO},
  title = {Design and Simulation of Hot-Electron Diffraction Oservation by Scanning Probe – Quantitative Evaluation of Observation Possibility –},
  journal = {Jap. J. Appl. Phys.},
  year = 2008,
}

@article{CTT100565405,
  author = {Chien-I KUO and Heng-Tung HSU and Edward Yi CHANG and Yasuyuki MIYAMOTO and Wen-Chung TSERN},
  title = {InAs High Electron Mobility Transistors with Buried Gate for Ultralow-Power-Consumption Low-Noise Amplifier Application},
  journal = {Japanese Journal of Applied Physics},
  year = 2008,
}

@article{CTT100554640,
  author = {Chien-I Kuo and Heng-Tung Hsu and Edward Yi Chang and Chia-Yuan Chang and Yasuyuki Miyamoto and Suman Datta and Marko Radosavljevic and Guo-Wei Huang and Ching Ting Lee},
  title = {RF and Logic Performance Improvement of In0.7Ga0.3As/InAs/In0.7Ga0.3As composite channel HEMTs Using Gate-Sinking Technology},
  journal = {IEEE Electron Device Lett.},
  year = 2008,
}

@article{CTT100549485,
  author = {Mitsuhiko Igarashi and KAZUHITO FURUYA and YASUYUKI MIYAMOTO},
  title = {Cutoff Frequency Characteristics of Gate-Control Hot Electron Transistors by Monte Carlo Simulation},
  journal = {Physica Status Solidi(C)},
  year = 2008,
}

@article{CTT100549484,
  author = {Chia-Yuan  Chang and Heng-Tung  Hsu and Edward Yi  Chang and Chien-I  Kuo and Suman   Datta and Marko  Radosavljevic and YASUYUKI MIYAMOTO and Guo-Wei  Huang},
  title = {Investigation of Impact Ionization in InAs-Channel HEMT for High-Speed and Low-Power Applications},
  journal = {IEEE Electron Dev. Lett.},
  year = 2007,
}

@article{CTT100549483,
  author = {Kazuya Nishihori and Yasuyuki Miyamoto},
  title = {Numerical Analysis of the Effect of P-Regions on the I-V Kink in GaAs MESFETs},
  journal = {Trans. IECE of Japan},
  year = 2007,
}

@article{CTT100534004,
  author = {Chia-Yuan Chang and Edward Yi Chang and Yi-Chung Lien and Yasuyuki Miyamoto and Chien-I Kuo and Sze-Hung Chang and Li-Hsin Chu},
  title = {High-PerformanceIn0.52Al0.48As/In0.6Ga0.4As Power Metamorphic High Electron Mobility Transistor for Ka-Band Applications},
  journal = {Jpn. J. Appl. Phys.},
  year = 2007,
}

@article{CTT100534003,
  author = {A. Suwa and I. Kashima and Y. Miyamoto and K. Furuya},
  title = {Increase of collector current in hot electron transistors controlled by gate bias},
  journal = {Jpn. J. Appl. Phys.,},
  year = 2007,
}

@article{CTT100534002,
  author = {Y. Miyamoto and M. Ishida and T. Yamamoto and T. Miura and K. Furuya},
  title = {InP buried growth of SiO2 wires toward reduction of collector capacitance in HBT},
  journal = {J. Cryst, Growth},
  year = 2007,
}

@article{CTT100522204,
  author = {Nobuya Machida and Yasuyuki Miyamoto and Kazuhito Furuya},
  title = {Charging Time of Double-Layer Emitter in Heterojunction Bipolar Transistor Based on Transmission Formalism},
  journal = { Jpn. J. Appl. Phys.},
  year = 2006,
}

@article{CTT100534001,
  author = {K Furuya and N Machida and M Igarashi and R Nakagawa and I Kashima and M Ishida and Y Miyamoto},
  title = {MC simulation of ultrafast transistor using ballistic electron in intrinsic semiconductor and its fabrication feasibility},
  journal = {J. Physics: Conference Series},
  year = 2006,
}

@article{CTT100391816,
  author = {Kazuhito Furuya and Yasunori Ninomiya and Nobuya Machida and Yasuyuki Miyamoto},
  title = {Double-Slit Interference Observation of Hot Electrons in Semiconductors -- Analysis of Experimental Data --},
  journal = {Jpn. J. Appl. Phys.},
  year = 2005,
}

@article{CTT100522205,
  author = {K. Goto and T. Kirigaya and Y. Masuda and Y.-J. Kim and Y. Miyamoto and S. Arai},
  title = {Design and Experiments of a Near-Field Optical Disk Head for Very High Efficiency},
  journal = {The Journal of Scanning Microscopies},
  year = 2004,
}

@article{CTT100499931,
  author = {Katsuhiko Takeuchi and Hiroshi Maeda and Ryo Nakagawa and Yasuyuki Miyamoto and Kazuhito Furuya},
  title = {InP hot-electron transistors with emitter mesa fabricated between gate electrodes for reduction in emitter-gate gate-leakage current},
  journal = {Jpn. J. Appl. Phys.},
  year = 2004,
}

@article{CTT100499945,
  author = {Y. Miyamoto and Y. Shirai and M. Yoshizawa and K.  Furuya},
  title = {20 nm Periodical Pattern by Calixarene Resists:  Comparison of CMC[4]AOMe with MC[6]AOAc},
  journal = { 2004  International   Microprocesses and Nanotechnology  Conference},
  year = 2004,
}

@article{CTT100499943,
  author = {K. Goto and T. Kirigaya and Y. Masuda and Y.-J. Kim and Y. Miyamoto and S. Arai },
  title = {Design and Experiments of a Near-Field Optical Disk Head for Very High Efficiency},
  journal = {The Journal of Scanning Microscopies},
  year = 2004,
}

@article{CTT100499940,
  author = {Masaki Yoshizawa and Yasuyuki Miyamoto and Hiroyuki Nakano and Tetsuya  Kitagawa and Shigeru Moriya},
  title = {Challenges to ultra-thin resist process for  LEEPL},
  journal = {J. Photopolymer Sci. Technol.},
  year = 2004,
}

@article{CTT100499936,
  author = {R.Nakagawa and K.Takeuchi and Y.Yamada and Y.Miyamoto and K.Furuya},
  title = {InP Hot Electron Transistors with Reduced Emitter Width for Controllability of Collector Current by Gate Bias},
  journal = {International Conference on Indium Phosphide and Related Material},
  year = 2004,
}

@article{CTT100499933,
  author = {Masaki Yoshizawa and Shigeru Moriya and Hiroyuki Nakano and Yuichi Shirai and Tatsuo Morita and Tetsuya Kitagawa and Yasuyuki Miyamoto},
  title = {Impact of Latent Image Quality on Line Edge Roughness in Electron Beam Lithography},
  journal = {Jpn. J. Appl. Phys. },
  year = 2004,
}

@article{CTT100499932,
  author = {YASUYUKI MIYAMOTO},
  title = {Observation of current modulation through self-assembled monolayer molecule in transistor structure},
  journal = {Jpn. J. Appl. Phys.},
  year = 2004,
}

@article{CTT100499930,
  author = {Yasuyuki Miyamoto and Ren Yamamoto and Hiroshi Maeda and Katsuhiko Takeuchi and Nobuya Machida and Lars-Erik Wernersson and Kazuhito Furuya},
  title = {InP Hot Electron Transistors with a Buried Metal Gate},
  journal = {Jpn. J. Appl. Phys.},
  year = 2003,
}

@article{CTT100491644,
  author = {M. Yoshizawa and S. Moriya and H. Nakano and T. Morita and T. Kitagawa and Y. Miyamoto},
  title = {The Impact of Latent Image Quality on Line Edge Roughness in Electron Beam Lithography},
  journal = {2003 International Microprocesses and Nanotechnology Conference},
  year = 2003,
}

@article{CTT100491649,
  author = {Y. Miyamoto and K. Sasao and Y. Azuma and N. Kaneda and Y. Majima},
  title = {Small Au/SAM/Au junctions by EB lithography},
  journal = {Photonic West},
  year = 2003,
}

@article{CTT100491648,
  author = {K.Yokoyama and Y.Miyamoto and T.Morita and T.Arai and K.Matsuda and K.Furuya},
  title = {Wet etching for self-aligned 0.1-um-wide emitter in InP/InGaAs HBT},
  journal = {Topical Workshop on Heterostructure Microelectronics},
  year = 2003,
}

@article{CTT100491647,
  author = {K. Sasao and Y. Azuma and N. Kaneda and E. Hase and Y. Miyamoto and Y. Majima},
  title = {Observation of current modulation in SAM-FET fabricated by an air-bridge structure},
  journal = {The 2003 International Conference on Solid State Devices and Materials},
  year = 2003,
}

@article{CTT100491658,
  author = {Y. Miyamoto and Y. Tohmori},
  title = {Activities of Indium Phosphide in Japan},
  journal = {GaAs Mantech},
  year = 2003,
}

@article{CTT100491646,
  author = {K. Takeuchi and H. Maeda and R. Makagawa and Y. Miyamoto and K. Furuya},
  title = {InP hot electron transistors using modulation of gate electrodes},
  journal = {The 2003 International Conference on Solid State Devices and Materials},
  year = 2003,
}

@article{CTT100491645,
  author = {K. Furuya and Y. Ninomiya and Y. Miyamoto},
  title = {Young's Double-Slit Interference Experiment of Hot Electron　in Semiconductors},
  journal = {The 13th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors},
  year = 2003,
}

@article{CTT100491659,
  author = {Tsuyoshi Tanaka and Kohichi Tokudome and Yasuyuki Miyamoto},
  title = {Effects of Low-Oxygen-Content Metalorganic Precursors on AlInAs and High Electron Mobility Transistor Structures with the Thick AlInAs Buffer Layer},
  journal = {Jpn. J. Appl. Phys.},
  year = 2003,
}

@article{CTT100491653,
  author = {田中剛 and 徳留功一 and 宮本恭幸},
  title = {低酸素MOVPE材料を用いたAlInAs,InPとAlInAs/InP HEMT構造の成長},
  journal = {第50回応用物理学会関係連合講演会},
  year = 2003,
}

@article{CTT100499928,
  author = {Keigo Yokoyama and Koji Matuda and Toshihiro Nonaka and Yasuyuki Miyamoto and Kazuhito Furuya},
  title = {Fabrication of GaInAs/InP heterojunction bipolar transistors with a single tungsten wire as collector electrode},
  journal = { Jpn. J. Appl. Phys.},
  year = 2003,
}

@article{CTT100469848,
  author = {宮本恭幸 and 古屋一仁},
  title = {InP系ヘテロ接合バイポーラトランジスタの高速化技術},
  journal = {応用物理},
  year = 2002,
}

@article{CTT100477626,
  author = {真島豊 and 笹尾和樹 and 東康男 and 宮本恭幸},
  title = {金属/SAM/金属構造素子の試作と電流-電圧特性},
  journal = {第63回応用物理学会学術講演会},
  year = 2002,
}

@article{CTT100477649,
  author = {Y. Majima and K. Sasao and Y. Azuma and Y. Miyamoto},
  title = {Fabrication and I-V characteristics of metal/SAM/metal devices},
  journal = {2002 International Microprocesses and Nanotechnology Conference},
  year = 2002,
}

@article{CTT100477647,
  author = {K. Takeuchi and R. Yamamoto and H. Maeda and Y. Miyamoto and K. Furuya},
  title = {Freestanding tungten wires for BM-HET },
  journal = {2002 International Microprocesses and Nanotechnology Conference},
  year = 2002,
}

@article{CTT100477631,
  author = {Y. Miyamoto and T. Arai and S. Yamagami and K. Matsuda and K. Furuya},
  title = {Evaluation of base-collector capacitance in submicron buried metal heterojunction bipolar transistors },
  journal = {The 2002 International Conference on Solid State Devices and Materials},
  year = 2002,
}

@article{CTT100477629,
  author = {Y. Miyamoto and R. Yamamoto and H. Maeda and K. Takeuchi and L.-E. Wernersson, K and Furuya},
  title = {InP Hot Electron Transistor with a Buried Metallic Gate for Electron Emission},
  journal = {60th Annual Device Research Conference},
  year = 2002,
}

@article{CTT100477627,
  author = {二宮泰徳 and 中村弘道 and 宮本恭幸 and 町田信也 and 古屋一仁},
  title = {GaInAs/InPダブルスリットを通過したホットエレクトロンの電流変調},
  journal = {第49回応用物理学会関係連合講演会},
  year = 2002,
}

@article{CTT100477624,
  author = {田中剛 and 徳留功一 and 宮本恭幸},
  title = {低酸素MOCVD材料を用いたAlInAsとAlInAs/InP HEMT構造の成長},
  journal = {第63回応用物理学会学術講演会},
  year = 2002,
}

@article{CTT100477623,
  author = {前田寛 and 山本練 and 竹内克彦 and 宮本恭幸 and 古屋一仁},
  title = {ノンドープInP中の埋込金属周期電極構造を用いたホットエレクトロントランジスタ},
  journal = {第63回応用物理学会学術講演会},
  year = 2002,
}

@article{CTT100477622,
  author = {Y. Miyamoto and H. Nakamura and Y. Ninomiya and H. Oguchi and N. Machida and K. Furuya },
  title = {Current modulation in fine electrode by hot electron passing through GaInAs/InP double slits},
  journal = {International Conference on Indium Phosphide and Related Materials},
  year = 2002,
}

@article{CTT100469854,
  author = {T. Morita and T. Arai and H. Nagatsuka and Y. Miyamoto and K. Furuya},
  title = {Fabrication of InP/GaInAs Double Heterojunction Bipolar Transistors with 0.1-um-Wide Emitter},
  journal = { Jpn. J. Appl. Phys.},
  year = 2002,
}

@article{CTT100451464,
  author = {T. Arai and S. Yamagami and Y. Miyamoto and KAZUHITO FURUYA},
  title = {Reduction of Base-Collector Capacitance in Submicron InP/GaInAs Heterojunction Bipolar Transistors with Buried Tungsten Wires},
  journal = {Jpn. J. Appl. Phys.},
  year = 2001,
}

@article{CTT100506681,
  author = {Y. Miyamoto and H. Oguchi and H. Nakamura and Y. Ninomiya and K. Furuya},
  title = {80 nm periodical ohmic contacts toward Young's double slit experiment using a semiconductor},
  journal = {  1st International Workshop on Quantum Nonplaner Nanostructures & Nanoelectronics},
  year = 2001,
}

@article{CTT100506683,
  author = {Y.Miyamoto and H.Oguchi and H.Nakamura and Y.Ninomiya and K.Furuya},
  title = {Isolation of 80 nm periodical Au/Ti/n-GaInAs ohmic contacts},
  journal = { 20th Electronic Materials Symposium},
  year = 2001,
}

@article{CTT100506682,
  author = {L.-E. Wernersson and R. Yamamoto and E. Lind and I. Pietzonka and W. Seifert and Y. Miyamoto and K. Furuya and L. Samuelson},
  title = {Attractive Potential around a Buried Metallic Gate in a Schottky Collector Hot Electron Transistor},
  journal = { 28th International Symposium on Compound Semiconductors},
  year = 2001,
}

@article{CTT100506680,
  author = {Y. Miyamoto and M. Kurita and K. Furuya},
  title = {GaInAs/AlAs/InP hot electron vacuum emitter},
  journal = {  1st International Workshop on Quantum Nonplaner Nanostructures & Nanoelectronics},
  year = 2001,
}

@article{CTT100453713,
  author = {森田竜夫 and 新井俊希 and 長塚弘美 and 宮本恭幸 and 古屋一仁},
  title = {0.1μｍ幅エミッタを有するInP/GaInAs系DHBTの作製},
  journal = {第62回応用物理学会学術講演会},
  year = 2001,
}

@article{CTT100453712,
  author = {新井俊希 and 山上滋春 and 酒井隆史 and 宮本恭幸 and 古屋一仁},
  title = {EB露光による微細金属埋込みHBTの作製},
  journal = {第62回応用物理学会学術講演会},
  year = 2001,
}

@article{CTT100453711,
  author = {中村弘道 and 小口博嗣 and 二宮泰徳 and 宮本恭幸 and 古屋一仁},
  title = {80nm周期Au/Ti/n-GaInAs オーミック電極のアイソレーション},
  journal = {第62回応用物理学会学術講演会},
  year = 2001,
}

@article{CTT100451470,
  author = {前堅一 and 柄沢伸也 and 宮本恭幸 and 古屋一仁},
  title = {GaAs/AlAs/InGaPショットキーコンタクト構造真空エミッタ},
  journal = {第62回応用物理学会学術講演会},
  year = 2001,
}

@article{CTT100451469,
  author = {新井俊希 and 山上滋春 and 酒井隆史 and 宮本恭幸 and 古屋一仁},
  title = {BM-HBT高速化のためのコレクタ抵抗の低減},
  journal = {第48回応用物理学会関係連合講演会},
  year = 2001,
}

@article{CTT100451468,
  author = {山本練 and 宮本恭幸 and 古屋一仁 and E. リンド and I.ピッツンカ and Ｌ.バナソン and L.サミュエルソン},
  title = {ノンドープGaAs中の埋込み金属電極によるホットエレクトロン電流変調},
  journal = {第48回応用物理学会関係連合講演会},
  year = 2001,
}

@article{CTT100451467,
  author = {T. Arai and T. Morita and H.Nagatsuka and Y. Miyamoto and K.  Furuya},
  title = {Fabrication of InP DHBTs with 0.1μm Wide Emitter},
  journal = { 59th Annual Device Research Conference},
  year = 2001,
}

@article{CTT100451466,
  author = {T. Arai and S. Yamagami and Y. Miyamoto and K. Furuya},
  title = {Submicron Buried Metal Heterojuunction Bipolar Transistors},
  journal = { International Conference on Indium Phosphide and Related Materials},
  year = 2001,
}

@article{CTT100451465,
  author = {T. Arai and S. Yamagami and Y. Okuda and Y. Harada and Y. Miyamoto and K. Furuya},
  title = {InP DHBT with 0.5 um wide emitter along <010> direction toward BM-HBT with narrow emitter},
  journal = {  Trans. IECE of Japan},
  year = 2001,
}

@article{CTT100435426,
  author = {新井俊希 and 原田恵充 and 山上滋春 and 宮本恭幸 and 古屋一仁},
  title = {Buried Metal Heterojunction Bipolar Transistorにおけるベースコレクタ間容量の低減},
  journal = {第47回応用物理学会関係連合講演会},
  year = 2000,
}

@article{CTT100435427,
  author = {新井俊希 and 飛田洋 and 宮本恭幸 and 古屋一仁},
  title = {TMGとTEGを材料としたタングステン細線のGaAs OMVPE埋め込み成長},
  journal = {第47回応用物理学会関係連合講演会},
  year = 2000,
}

@article{CTT100435476,
  author = {栗田昌尚 and 宮本恭幸 and 古屋一仁},
  title = {GaInAs/AlAs/InP構造真空エミッタからの電子放出},
  journal = {第61回応用物理学会学術講演会},
  year = 2000,
}

@article{CTT100435475,
  author = {山上滋春 and 新井俊希 and 奥田慶文 and 宮本恭幸 and 古屋一仁},
  title = {BMHBT微細化に向けた0.5μｍ幅エミッタInP系DHBTの作製と評価},
  journal = {第61回応用物理学会学術講演会},
  year = 2000,
}

@article{CTT100445305,
  author = {T. Arai and H. Tobita and Y. Miyamoto and K. Furuya},
  title = {GaAs buried growth over tungsten stripe using TEG and TMG},
  journal = {J. Crystal Growth},
  year = 2000,
}

@article{CTT100433146,
  author = {Y. Miyamoto and A. Kokubo and H. Oguchi and M. Kurahashi and K. Furuya},
  title = {Fabrication and transport properties of 50-nm-wide Au/Cr/GaInAs electrode for electron wave interference device},
  journal = {Applied Surface Science},
  year = 2000,
}

@article{CTT100435474,
  author = {小口博嗣 and 佐藤航一郎 and 宮本恭幸 and 古屋一仁},
  title = {電子波干渉素子用GaInAs上80nm周期電極の特性},
  journal = {第47回応用物理学会関係連合講演会},
  year = 2000,
}

@article{CTT100434645,
  author = {T. Arai and H. Tobita and Y. Harada and M. Suhara and Y. Miyamoto and K. Furuya},
  title = {Toward nano-metal buried structure in InP - 20 nm wire and InP buried growth of tungsten},
  journal = {Physica E},
  year = 2000,
}

@article{CTT100434646,
  author = {T. Arai and Y. Harada and S. Yamagami and Y. Miyamoto and K. Furuya},
  title = {First Fabrication of GaInAs/InP Buried Metal Heterojunction Bipolar Transistor and Reduction of Base-Collector Capacitance},
  journal = { Jpn. J. Appl. Phys.},
  year = 2000,
}

@article{CTT100434647,
  author = {YASUYUKI MIYAMOTO},
  title = {Peak Width Analysis of Current-Voltage Characteristics of Triple-Barrier Resonant Tunneling Diodes},
  journal = {Jpn. J. Appl. Phys},
  year = 2000,
}

@article{CTT100435421,
  author = {T. Arai and Y. Harada and S. Yamagami and Y. Miyamoto and K. Furuya},
  title = {C<sub>BC</sub> reduction in GaInAs/InP buried metal heterojunction bipolar transistor},
  journal = {Twelfth International Conference on Indium Phosphide and Related Materials (IPRM'00)},
  year = 2000,
}

@article{CTT100435422,
  author = {T. Arai and H. Tobita and Y. Miyamoto and K. Furuya},
  title = {GaAs buried growth over tungsten stripes using TEG and TMG},
  journal = {11th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE XI)},
  year = 2000,
}

@article{CTT100435423,
  author = {Y. Miyamoto and M. Kurita and K. Furuya},
  title = {Vacuum Microelectronic Electron Emitter by InP Double Barrier Diode Toward RFApplication},
  journal = {58th Annual Device Research Conference},
  year = 2000,
}

@article{CTT100435424,
  author = {T. Arai and S. Yamagami and Y. Okuda and Y. Harada and Y. Miyamoto and K. Furuya},
  title = {InP DHBT with 0.5μm Wide Emitter along 010 Direction toward BM-HBT with Narrow Emitter},
  journal = {Topical Workshop on Heterostructure Microelectronics (TWHM'00)},
  year = 2000,
}

@article{CTT100435425,
  author = {Y. Miyamoto and R. Yamamoto and H. Tobita and K. Furuya},
  title = {Very shallow n-GaAs ohmic contact with 10nm thick GaInAs layer},
  journal = {19th Electronic Materials Symposium},
  year = 2000,
}

@article{CTT100425152,
  author = {Y.Miyamoto and H.Tobita and K.Oshima and K.Furuya},
  title = {Barrier thickness dependence of peak current density in GaInAs/AlAs/InP resonant tunneling diodes by MOVPE},
  journal = {Solid State Electronics},
  year = 1999,
}

@article{CTT100434642,
  author = {T.Oobo and R.Takemura and K.Sato and M.Suhara and Y.Miyamoto and K.Furuya},
  title = {Effect of spacer layer thickness in energy level width narrowing in GaInAs/InP resonant tunneling diodes grown by OMVPE},
  journal = { Jpn. J. Appl. Phys.},
  year = 1998,
}

@article{CTT100442449,
  author = {Y.Miyamoto and J.Yoshinaga and H.Toda and T.Arai and H.Hongo and T.Hattori and A.Kokubo and K.Furuya},
  title = {Sub-micron GaInAs/InP Hot Electron Transistors by EBL process and size dependence of current gain},
  journal = {Solid State Electronics},
  year = 1998,
}

@article{CTT100442448,
  author = {Y.Miyamoto and A.Yamaguchi and K. Oshima and W.Saitoh and M.Asada},
  title = {Metal-Insulator-Semiconductor emitter with epitaxial CaF2 layer as insnlator},
  journal = {J. Vac. Sci. Technol.},
  year = 1998,
}

@article{CTT100442447,
  author = {H.Hongo and Y.Miyamoto and J.Suzuki and M.Suhara and K.Furuya},
  title = {Wrapped Alignment Mark for fabrication of Interference/Diffraction hot electron devices},
  journal = {Jpn. J. Appl.Phys.},
  year = 1998,
}

@article{CTT100434643,
  author = {A.Kokubo and T.Hattori and H.Hongo and M.Suhara and Y.Miyamoto and K.Furuya},
  title = {25 nm Pitch GaInAs/InP Buried Structure by Calixarene Resist},
  journal = {Jpn. J. Appl. Phys.},
  year = 1998,
}

@article{CTT100537351,
  author = {Y.Miyamoto and A.Kokubo and T.Hattori and H.Hongo and M.Suhara and K.Furuya},
  title = {25 nm pitch GaInAs/InP buried structure : Improvement by calixarene as EB resist and TBP as P-source in OMVPE regrowth},
  journal = {  J. Vac. Sci. Technol. B},
  year = 1998,
}

@article{CTT100434640,
  author = {M.Suhara and C.Nagao and H.Honji and Y.Miyamoto and K.Furuya and R.Takemura},
  title = {Atomically flat OMVPE growth of GaInAs and InP observed by AFM for level narrowing in resonant tunneling diodes},
  journal = {J.Cryst.Growth},
  year = 1997,
}

@article{CTT100434638,
  author = {H.Hongo and H.Tanaka and Y.Miyamoto and T.Otake and J.Yoshinaga and K.Furuya},
  title = {Electrical properties of 100nm pitch Cr/Au fine electrodes with 40nm width on GaInAs toward hot electron interference/diffraction devices},
  journal = {Microelectronic Engineering},
  year = 1997,
}

@article{CTT100434639,
  author = {YASUYUKI MIYAMOTO},
  title = {High-temperature estimation of phase coherent length of hot electron using GaInAs/InP triple-barrier resonant tunneling diodes grown by OMVPE},
  journal = {Jpn.J.Appl.Phys.},
  year = 1997,
}

@article{CTT100434641,
  author = {T.Oobo and R.Takemura and M.Suhara and Y.Miyamoto and K.Furuya},
  title = {High Peak to Valley Current Ratio GaInAs/GaInP Resonant Tunneling Diodes},
  journal = {Jpn.J.Appl.Phys.},
  year = 1997,
}

@article{CTT100442446,
  author = {H.Hongo and Y.Miyamoto and M.Gault and K.Furuya},
  title = {Influence of finite energy width in electron distribution to an experiment of hot electron donble-slit eyperiment},
  journal = {J. Appl. Phys.},
  year = 1997,
}

@article{CTT100442445,
  author = {J.M.M.Rios and L.M.Lurardi and S.Chandrasekhar and Y.Miyamoto},
  title = {A self-consistent method for complete small-signal parameter extraction of InP-based heterojunction bipolar transistors(HBTs)},
  journal = {IEEE Transaction of Microwave Theory and Technigue},
  year = 1997,
}

@article{CTT100442444,
  author = {H.Hongo and Y.Miyamoto and M.Suhara and K.Furuya},
  title = {A 40nm pitch doble slit experiment of hot electrons in a semiconductor under a magnetic field},
  journal = {Applied Physics Letter},
  year = 1997,
}

@article{CTT100434637,
  author = {H.Hongo and Y.Miyamoto and M.Suhara and K.Furuya},
  title = {Hot electron interference by 40nm-pitch double slit buried in semiconductor},
  journal = {Microelectronic Engineering},
  year = 1997,
}

@article{CTT100672943,
  author = {MASAHIRO WATANABE and H. Hongo and T. Hattori and Y. Miyamoto and K. Furuya and T. Matsunuma and M. Asada},
  title = {Seventy nm Pitch Patternings on CaF<sub>2</sub> by e-beam Exposure: An Inorganic Resist and a Contamination Resist},
  journal = {Jpn. J. Appl. Phys.},
  year = 1996,
}

@article{CTT100672930,
  author = {MASAHIRO WATANABE and Y. Miyamoto, K and T. Maruyama and M. Asada},
  title = {Detection of hot electron current with scanning hot electron microscopy},
  journal = {Appl. Phys. Lett},
  year = 1996,
}

@article{CTT100442441,
  author = {Y.Miyamoto and J.M.M.Rios and A.G.Dentai and S.Chandrasekhar},
  title = {Reduction of Base-Collector Capacitance by Undercut of Collector and Subcollector in GaInAs/InP DHBTS},
  journal = {IEEE Electron Devices Letter},
  year = 1996,
}

@article{CTT100442442,
  author = {H.Hongo and H.Tanaka and Y.Miyamoto and J.Yoshinaga and K.Furuya},
  title = {Electrical properties of 100nm pitch Cr/Au fine electrodes with 40nm width on GaAs},
  journal = {Japanese Journal of Applied Physics},
  year = 1996,
}

@article{CTT100442443,
  author = {H.Hongo and T.Hattori and Y.Miyamoto and K.Furuya and K.Matsunuma and M.Watanabe and M.Asada},
  title = {Seventy nm pitch patterning on CaF2 by e-beam exposure : An inorganic resist and a contamination resist},
  journal = {Japanese Journal of Applied Physics},
  year = 1996,
}

@article{CTT100442439,
  author = {Y.Miyamoto and A.G.Dentai and J.M.M.Rios and S.Chandrasekhar},
  title = {GaInAs/InP DHBT Incorporating Thick Extrinsic Base and Seletively Regrown Emitter},
  journal = {Electronics Letter},
  year = 1995,
}

@article{CTT100442440,
  author = {H.Hongo and J.Suzuki and M.Suhara and Y.Miyamoto and K.Furuya},
  title = {Nanostructure Alignment for Hot Electron Interferenc/Diffraction Devices},
  journal = {Japanese Journal Applied Physics},
  year = 1995,
}

@article{CTT100442437,
  author = {H.Hongo and Y.Miyamoto and J.Suzuki and M.Funayama and T.Morita and K.Furuya},
  title = {Ultrafine fabrication technique for hot electron interference/diffraction devices},
  journal = {Japanese Journal Applied Physics},
  year = 1994,
}

@article{CTT100442438,
  author = {M.Suhara and Y.Miyamoto and H.Hongo and J.Suzuki and K.Furuya},
  title = {GaInAs/InP organometallic vapor phase epitaxy regrowth for ultrafine buried heterostructure with 50nm pitch toward electron wave devices},
  journal = {Journal of Crystal Growth},
  year = 1994,
}

@article{CTT100442436,
  author = {YASUYUKI MIYAMOTO},
  title = {Fabrication technology for long-wavelength Ga In As(P)InP quantum-wire lasers by wet-chemical etching and OMVPE regrowth},
  journal = {Opto electronics-Devices and technology},
  year = 1993,
}

@article{CTT100442435,
  author = {Y.Miyake and H.Hirayama and K.Kudo and S.Tamura and S.Arai and M.Asada and Y.Miyamoto and Y.Suematsu},
  title = {Room temperature operation of GaInAs/GaInAsP/InP SCH lasers with quantuw-wire size active region},
  journal = {IEEE J. Quantum Electron},
  year = 1993,
}

@article{CTT100442434,
  author = {K.Kurihara and Y.Miyamoto and K.Furuya},
  title = {Observation of InP Surfaces after (NH4)2Sx treatment by a scanning tunneling microscope},
  journal = {Jpn. J. Appl. Phys},
  year = 1993,
}

@article{CTT100442433,
  author = {T.Sekiguchi and Y.Miyamoto and K.Furuya},
  title = {Influence of impurities on the performance of doped well Ga In As/Inp resonant tunneling diode},
  journal = {Jpn. J. Appl. Phys},
  year = 1993,
}

@article{CTT100442430,
  author = {Y.Miyamoto and K.Furuya and D.Yamazaki},
  title = {Fabricution of ultrafine X-ray mask using pricise crystal growth techniqe},
  journal = {Jpn. J. Appl. Phys.},
  year = 1992,
}

@article{CTT100442432,
  author = {YASUYUKI MIYAMOTO},
  title = {Fabrication of quantum wire structure},
  journal = {Journal of crystallgraphic society of Japan},
  year = 1991,
}

@article{CTT100442429,
  author = {T.Suemasu and Y.Miyamoto and K.Furuya},
  title = {Improvement of regrown interface in InP organo-metallic vapor phase epitaxy},
  journal = {Jpn. J. Appl. Phys.},
  year = 1991,
}

@article{CTT100442425,
  author = {S.Yamaura and Y.Miyamoto and K.Furuya},
  title = {High current gain GnInAS/InP hot electron transistor},
  journal = {Electronics Lett.},
  year = 1990,
}

@article{CTT100442423,
  author = {Y.Miyamoto and S.Yamaura and K.Furuya},
  title = {Negative differential conductiance due to resonant states in GmInAs/InP hot electron transistors},
  journal = {Appl. Phys. Lett},
  year = 1990,
}

@article{CTT100442424,
  author = {T.Yamamoto and Y.Miyamoto and M.Ogawa and E.Inamura and K.Furuya},
  title = {Buried rectangnber GaInAs/InP corrugations of 70nm pitch by OMVPE},
  journal = {Electronics Lett.},
  year = 1990,
}

@article{CTT100442431,
  author = {Y.Miyamoto and Y.Miyake and M.Asada and Y.Suematsu},
  title = {Threshold current density of GaInAsP/InP quantum box Lasers},
  journal = {IEEE J. Quantum. Electron},
  year = 1989,
}

@article{CTT100442426,
  author = {E.Inamura and Y.Miyamoto and S.Tamura and S.Takasugi and K.Furuya},
  title = {Wet chemical etching for ultra fine periodic structrures ; rectangular InP corrugations of 70nm pitch and 100nm depth},
  journal = {Jpn. J. Appl. Phys.},
  year = 1989,
}

@article{CTT100442428,
  author = {Y.Miyamoto and C.Watanabe and M.Nagashima and K.Furuya and Y.Suematsu},
  title = {Fabrication of GaInAsP/InP heterostructure for 1.5μm lasers by OMVPE},
  journal = {Trans. IEICE of Japan.},
  year = 1987,
}

@article{CTT100442427,
  author = {Y.Miyamoto and M.Cao and Y.Shingai and K.Furuya and Y.Suematsu and K.G.Ravikumar and S.Arai},
  title = {Ligth emisson form quantun box structure by current injection},
  journal = {Jpn. J. Appl. Phys},
  year = 1987,
}

@inproceedings{CTT100887486,
  author = {Y. Miyamoto and N. Nishiyama and S. Suzuki},
  title = {Electron beam lithography in processes for electron/opto/teraherz devices},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100887485,
  author = {K. Makiyama and S. Yoshida and K. Nakata and Y. Miyamoto},
  title = {Innovative RF Device Technologies for Advanced Information and Communications Network Society},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100887483,
  author = {Y. Ito and S. Tamai and T. Hoshi and Y. Miyamoto},
  title = {GaN channel thickness dependence in AlGaN / GaN HEMT structures with back barriers},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100887482,
  author = {Y. Miyamoto and K. Makiyama},
  title = {Lateral thickness change of the high-k film on GaN HEMT for uniform electric field},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100875027,
  author = {T. Gotow and T. Arai and T. Aota and Y. Miyamoto},
  title = {Evaluation of TMAH treatment for isolation process of N-polar GaN HEMTs},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100880230,
  author = {Takahiro Arai and Tomoya Aota and isao makabe and 中田健 and Takahiro Gotow and YASUYUKI MIYAMOTO},
  title = {N極性GaN HEMTのTMAHによる素子分離},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100875023,
  author = {Tomimasa Go and M. Kitamura and T. Gotow and Y. Miyamoto},
  title = {PMA Evaluation of TiN ALD in InGaAs Nanosheet MOSFETs},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100875020,
  author = {T. Gotow and Tatsushi Suka and Y. Miyamoto},
  title = {Comparative study of breakdown and interface properties of gate insulator on N-polar and Ga-polar GaN MIS capacitor},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100880231,
  author = {Takahiro Gotow and Tatsushi Suka and YASUYUKI MIYAMOTO},
  title = {N極性およびGa極性GaN MIS構造の界面特性の比較検討},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100875017,
  author = {Y. Miyamoto and T. Gotow},
  title = {Proposal of breakdown voltage control of GaN HEMT by interface charge},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100845767,
  author = {YASUYUKI MIYAMOTO and Takahiro Gotow},
  title = {界面電荷量によるGaN HEMTの耐圧制御の提案},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100842580,
  author = {Tomoya Aota and Akihiro Hayasaka and isao makabe and Shigeki Yoshida and Takahiro Gotow and YASUYUKI MIYAMOTO},
  title = {Wet Etching for Isolation of N-polar GaN HEMT Structure by Electrodeless Photo-Assisted Electrochemical Reaction},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100842581,
  author = {Tomoya Aota and Akihiro Hayasaka and isao makabe and Shigeki Yoshida and Takahiro Gotow and YASUYUKI MIYAMOTO},
  title = {N極性GaN HEMT構造での無電極PECエッチング},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100822693,
  author = {Masahiro Mori and Akihiro Hayasaka and 眞壁 勇夫 and 吉田 成輝 and Takahiro Gotow and YASUYUKI MIYAMOTO},
  title = {N極性GaN HEMT構造におけるコンタクト抵抗の低減},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100828196,
  author = {Moataz Eissa and Takuya Mitarai and Tomohiro Amemiya and Nobuhiko Nishiyama and Yasuyuki Miyamoto},
  title = {Fabrication of Si Photonics Waveguides by Thick Resist-Mask Electron Beam Lithography Proximity Effect Correction},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100803276,
  author = {Moataz Eissa and Takuya Mitarai and Tomohiro Amemiya and Nobuhiko Nishiyama and Yasuyuki Miyamoto},
  title = {Fabrication of Si Photonics Waveguides by Thick Resist-Mask Electron Beam Lithography Proximity Effect Correction},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100822692,
  author = {Akihiro Hayasaka and Ryousuke Aonuma and Koushi Hotta and Nanae Kanai and 眞壁 勇夫 and 吉田 成輝 and YASUYUKI MIYAMOTO},
  title = {N極性GaN HEMT作製プロセスにおけるプラズマダメージの低減},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100822691,
  author = {K. Fukuda and N. Nogami and S. Kunisada and Y. Miyamoto},
  title = {Circuit speedoriented device design scheme for double gate hetero tunnel FETs},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100822685,
  author = {M.Kitamura and T.Kanazawa and Y.Miyamoto},
  title = {Evaluation of fabricationmethod of InGaAs nanosheet},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100803257,
  author = {Tomohiro Amemiya and Tomoya Yoshida and Yuki Atsumi and Yasuyuki Miyamoto and Yoichi Sakakibara and Shigehisa Arai},
  title = {Si-based Orbital Angular Momentum Mux/Demux Module},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100800938,
  author = {Y. Miyamoto},
  title = {Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin Undoped Channel and Semi-Insulating Layer},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100800936,
  author = {A. Hayasaka and R. Aonuma and K. Hotta and I. Makabe and S. Yoshida and Y. Miyamoto},
  title = {N-polar GaN HEMT with Al2O3 gate insulator},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100800849,
  author = {Naoya Nogami and Koichi Fukuda and YASUYUKI MIYAMOTO},
  title = {量子効果の影響を考慮したGaAsSb/InGaAs Double-Gate Tunnel FETの検討},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100803290,
  author = {Tomohiro Amemiya and Tomoya Yoshida and Yuki Atsumi and nobuhiko nishiyama and YASUYUKI MIYAMOTO and Yoichi Sakakibara and SHIGEHISA ARAI},
  title = {Siフォトニクスによる光渦MUX/DEMUXモジュール},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100800847,
  author = {Wenlun Zhang and Toru Kanazawa and Minoru Kitamura and YASUYUKI MIYAMOTO},
  title = {UV-O3表面酸化によるHfS2 MOSFETの性能改善},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100803268,
  author = {Tomohiro Amemiya and Tomoya Yoshida and Yuki Atsumi and Nobuhiko Nishiyama and Yasuyuki Miyamoto and Yoichi Sakakibara and Shigehisa Arai},
  title = {Orbital Angular Momentum Mux/Demux Module Using Vertically Curved Si Waveguides},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100800846,
  author = {Akihiro Hayasaka and Ryousuke Aonuma and Koushi Hotta and 眞壁 勇夫 and 吉田 成輝 and YASUYUKI MIYAMOTO},
  title = {Al2O3ゲート絶縁膜を持つN極性GaN HEMT},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100800848,
  author = {Minoru Kitamura and Toru Kanazawa and YASUYUKI MIYAMOTO},
  title = {HSQを用いたInGaAsナノシート構造作製法評価},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100800930,
  author = {K. Hotta and Y. Tomizuka and K. Itagaki and I. Makabe and S. Yoshida and Y. Miyamoto},
  title = {Annealing temperature dependence of alloy contact for N-polar GaN HEMT structure},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800934,
  author = {Y. Miyamoto and N. Kise and R. Aonuma},
  title = {GaAsSb/InGaAs double gate tunnel FET operating below 60 mv/decade and temperature dependence of band-edge decay parameters},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800931,
  author = {Y. Miyamoto},
  title = {Prospective New Fuctionality of Monolithic GaN HEMT Integrated Circuits},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800850,
  author = {Tomohiro Amemiya and 吉田 知也 and 渥美 祐樹 and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and 榊原 陽一 and SHIGEHISA ARAI},
  title = {Siフォトニクスによる光渦MUX/DEMUXモジュール},
  booktitle = {電子情報通信学会技術研究報告},
  year = 2018,
}

@inproceedings{CTT100800939,
  author = {Y. Higa and M. Yoshida and N. Nishiyama and Y. Miyamoto and Nobuyuki Kagi},
  title = {High Power, 14xx-nm Eye-safe, Epitaxially Stacked Pulse Laser for Detection and Ranging Applications},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800853,
  author = {Tomohiro Amemiya and 吉田 知也 and Yuki Atsumi and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and 榊原 陽一 and SHIGEHISA ARAI},
  title = {Si湾曲カプラを用いた光渦MUX/DEMUXモジュール},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800928,
  author = {R. Aonuma and N. Kise and Y. Miyamoto},
  title = {Improvement in GaAsSb/InGaAs double-gate tunnel FET using thermal evaporation for gate electrode and Al2O3/ZrO2 for gate insulator},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800925,
  author = {W. Zhang and S. Netsu and T.Kanazawa and T. Amemiya and Y. Miyamoto},
  title = {p-MoS2/HfS2 van der Waals Heterostructure Transistor Using Ni Backgate Buried in HfO2 Dielectric},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800883,
  author = {吉田匡廣 and 比嘉康貴 and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and 加木信行},
  title = {測距用14xx-nm Eye-safe波長帯高出力エピタキシャルスタックパルスレーザ},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800854,
  author = {Wenlun Zhang and Netsu Seikou and Toru Kanazawa and Tomohiro Amemiya and YASUYUKI MIYAMOTO},
  title = {埋め込みNiバックゲートを用いたp-MoS2/HfS2トンネルFET},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800886,
  author = {Shinjiro Iwata and Kazumi Ohashi and Netsu Seikou and Koichi Fukuda and YASUYUKI MIYAMOTO},
  title = {GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける界面準位の導入による性能の劣化},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800851,
  author = {Ryousuke Aonuma and Nobukazu Kise and YASUYUKI MIYAMOTO},
  title = {Al2O3/ZrO2ゲート絶縁膜を使用したことによるGaAsSb/InGaAsダブルゲートトンネルFETの性能改善},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800852,
  author = {Koushi Hotta and Yumiko Tomizuka and Kosuke Itagaki and 眞壁 勇夫 and 吉田 成輝 and YASUYUKI MIYAMOTO},
  title = {N極性GaN HEMT構造のコンタクト抵抗の熱処理温度依存性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800924,
  author = {D. Nakajun and N. Kanai and R. F. T. Fathulah and H. Fujita and E. Yagyu and Y. Miyamoto},
  title = {Multi-level inverter toward GaN HEMT monolithic integrated circuit},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100799619,
  author = {Nanae Kanai and Kenichi Okada and Yasuyuki Miyamoto},
  title = {Investigation of Active Load Matching Using GaN HEMT as Digital Switch},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800923,
  author = {Y.Miyamoto and T. Kanazawa and N. Kise and H. Kinoshita and Kazuto Ohsawa},
  title = {Regrown Source / Drain in InGaAs Multi-Gate MOSFET},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816315,
  author = {YASUYUKI MIYAMOTO},
  title = {The Potential of GaN HEMT on GaN Substrate},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100768825,
  author = {Toru Kanazawa and Kazuto Ohsawa and Tomohiro Amemiya and Nobukazu Kise and Ryosuke Aonuma and Yasuyuki Miyamoto},
  title = {Fabrication of InGaAs Nanosheet Transistors with Regrown Source},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800885,
  author = {Syougo Kunisada and Koichi Fukuda and YASUYUKI MIYAMOTO},
  title = {GaAsSb/InGaAsダブルゲートTunnel FETにおける量子効果の検討‐正孔バンドの取り扱い},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100759540,
  author = {Toru Kanazawa and Kazuto Ohsawa and Tomohiro Amemiya and Nobukazu Kise and Ryousuke Aonuma and YASUYUKI MIYAMOTO},
  title = {InGaAsナノシートトランジスタの作製},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800884,
  author = {Nobukazu Kise and Ryousuke Aonuma and YASUYUKI MIYAMOTO},
  title = {GaAsSb/InGaAsダブルゲートトンネルFETにおけるゲート金属形成プロセスの影響},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100757917,
  author = {Toru Kanazawa and Yasuyuki Miyamoto},
  title = {Development of Field-Effect Transistor  Using 2D Layered Hafnium Disulfide},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100752193,
  author = {Syougo Kunisada and Koichi Fukuda and YASUYUKI MIYAMOTO},
  title = {[8a-C18-3] InGaAs/GaAsSbダブルゲートTunnel FETにおける量子効果の影響},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100747612,
  author = {Netsu Seikou and Toru Kanazawa and Tomohiro Amemiya and YASUYUKI MIYAMOTO},
  title = {HfS2/MoS2 ヘテロジャンクションの温度依存電流特性},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100747615,
  author = {Kazuto Ohsawa and Toru Kanazawa and Nobukazu Kise and Tomohiro Amemiya and YASUYUKI MIYAMOTO},
  title = {InGaAsナノシートチャネルを持つマルチゲートMOSFETに向けた作製プロセス開発},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100752196,
  author = {Nobukazu Kise and Shinjiro Iwata and Ryousuke Aonuma and YASUYUKI MIYAMOTO},
  title = {[8a-S22-1] 68mV/decのSSをもつGaAsSb/InGaAsダブルゲートトンネルFET},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100758803,
  author = {K. Makiyama and T. Ohki and S. Ozaki and Y. Niida and N. Okamoto and Y. Minoura and M. Sato and Y. Kamada and T. Ishiguro and K. Joshin and N. Nakamura and Y. Miyamoto},
  title = {InAlGaN/GaN-HEMT Device Technologies for High-Power-Density W-band Amplifiers (Invited)},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100747601,
  author = {Seiko Netsu and Toru Kanazawa and Vikrant Upadhyaya and Teerayut Uwanno and Tomohiro Amemiya and Kosuke Nagashio and Yasuyuki Miyamoto},
  title = {Type II HfS2/MoS2 heterojunction Tunnel FET},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100752547,
  author = {D. Nakajun and R. F. T. Fathulah and H. Fujita and E. Yagyu and Y. Miyamoto},
  title = {Multi-level inverter by GaN HEMT on semi-insulating substrate},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100752724,
  author = {Y. Miyamoto and D. Nakajun and R. F. T. Fathulah and H. Fujita and E. Yagyu},
  title = {High speed GaN HEMT for power electronics (Invited)},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100752745,
  author = {K. Makiyama and S. Ozaki and Y. Niida and T. Ohki and N. Okamoto and Y. Minoura and M. Sato and Yoichi Kamada and K. Joshin and N. Nakamura and Yasuyuki Miyamoto},
  title = {Advanced HEMTs and MMICs Technologies for Next Generation Millimeter-wave Amplifiers (Invited)},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100752710,
  author = {YASUYUKI MIYAMOTO},
  title = {ヘテロ構造電子デバイスとMOVPE/MBE (チュートリアル講演)},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100752749,
  author = {K. Makiyama and Y. Niida and S. Ozaki and T. Ohki and N. Okamoto and Y. Minoura and M. Sato and Y. Kamada and K. Joshin and K. Watanabe and Y. Miyamoto},
  title = {GaN HEMT Device Technology for W-band Power Amplifiers (Invited)},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100752746,
  author = {N. Kise and S. Iwata and R. Aonuma and K. Ohsawa and Y. Miyamoto},
  title = {GaAsSb/InGaAs Double-Gate Vertical Tunnel FET with a Subthreshold Swing of 68mV/dec at Room Temperature},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100735618,
  author = {Toru Kanazawa and Tomohiro Amemiya and Netsu Seikou and Vikrant Upadhyaya and Koichi Fukuda and YASUYUKI MIYAMOTO},
  title = {HfS2系トンネルトランジスタのデバイスシミュレーション},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100735914,
  author = {Netsu Seikou and Toru Kanazawa and Vikrant Upadhyaya and ウワンノー ティーラユット and Tomohiro Amemiya and 長汐 晃輔 and YASUYUKI MIYAMOTO},
  title = {Type II 型 HfS2/MoS2ヘテロジャンクションを有するTFET},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100740854,
  author = {Kazuto Ohsawa and Shinji Noguchi and Netsu Seikou and Nobukazu Kise and YASUYUKI MIYAMOTO},
  title = {[16p-413-11] HfO2/Al2O3/InGaAsゲート構造をもつMOSFETの移動度のH2アニール後における成膜温度およびAl2O3膜厚依存性},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100740070,
  author = {Shinjiro Iwata and Nobukazu Kise and Ryousuke Aonuma and YASUYUKI MIYAMOTO},
  title = {[16p-412-5] GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける不純物濃度調整によるオン電流の向上},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100738888,
  author = {Ryousuke Aonuma and Shinjiro Iwata and Nobukazu Kise and YASUYUKI MIYAMOTO},
  title = {68mV/decのSSを持つGaAsSb/InGaAs縦型ダブルゲートトンネルFET},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100740944,
  author = {Kazuto Ohsawa and Shinji Noguchi and Netsu Seikou and Nobukazu Kise and YASUYUKI MIYAMOTO},
  title = {HfO2/Al2O3/InGaAsゲート構造における移動度への成膜温度およびH2アニールの影響},
  booktitle = {信学技報},
  year = 2017,
}

@inproceedings{CTT100735598,
  author = {Tomohiro Amemiya and Satoshi Yamasaki and Toru Kanazawa and Atsushi Ishikawa and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and Takuo Tanaka and SHIGEHISA ARAI},
  title = {光回路とプラズモニックメタマテリアル},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100740975,
  author = {K. Makiyama and Y. Niida and S. Ozaki and T. Ohki and N. Okamoto and Y. Minoura and M. Sato and Y. Kamada and K. Joshin and K. Watanabe and Y. Miyamoto},
  title = {High-Power-Density InAlGaN/GaN-HEMT Technology for W-Band Amplifier (Invited)},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100740907,
  author = {Kazuto Ohsawa and Nobukazu Kise and YASUYUKI MIYAMOTO},
  title = {15p-B9-10 HfO2/Al2O3/InGaAsゲート構造における移動度の成膜温度およびAl2O3膜厚依存性},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100722102,
  author = {Toru Kanazawa and Vikrant Upadhyaya and Tomohiro Amemiya and Atsushi Ishikawa and 鶴田 健二 and Takuo Tanaka and YASUYUKI MIYAMOTO},
  title = {HfO2パッシベーションによるHfS2 FETの特性改善},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100740976,
  author = {K. Ohsawa and N. Kise and Y. Miyamoto},
  title = {Deposition Temperature and Al2O3 Thickness Dependence on the Mobility of HfO2/Al2O3/InGaAs Gate Stacks},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100740963,
  author = {M. Kashiwano and A. Yukimachi and Y. Miyamoto},
  title = {Experimental approach for feasibility of superlattice FETs},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100740969,
  author = {K. Makiyama and S. Ozaki and T. Ohki and N. Okamoto and Y. Minoura and Y. Niida and Y. Kamada and M. Sato and K. Joshin and K. Watanabe and Y. Miyamoto},
  title = {High-Performance GaN-HEMT Technology for W-band Amplifier (Invited)},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100740965,
  author = {K. Makiyama and S. Ozaki and Y. Niida and T. Ohki and N. Okamoto and Y. Minoura and M. Sato and Y. Kamada and K. Joshin and K. Watanabe and Y. Miyamoto},
  title = {InAlGaN/GaN-HEMT device technologies for W-band high-power amplifier (Invited)},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100722083,
  author = {Toru Kanazawa and Tomohiro Amemiya and Vikrant Upadhyaya and Atsushi Ishikawa and Kenji Tsuruta and Takuo Tanaka and Yasuyuki Miyamoto},
  title = {Effect of the HfO2 passivation on HfS2 Transistors},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100725110,
  author = {Vikrant Upadhyaya and Toru Kanazawa and YASUYUKI MIYAMOTO},
  title = {Vacuum annealing and passivation of Hf<sub>2</sub> FET for mitigation of atmospheric degradation},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100709160,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and Nobuhiko Nishiyama and Yasuyuki Miyamoto and Tatsuhiro Urakami and Takuo Tanaka and Shigehisa Arai},
  title = {(Invited) Permeability Engineering in Optical Communication Devices},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100740962,
  author = {Y. Miyamoto and W. Lin and S.Iwata and K. Fukuda},
  title = {Steep sub-threshold slope in short-channel InGaAs TFET  (Invited)},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100725185,
  author = {Haruki Kinoshita and Nobukazu Kise and Atsushi Yukimachi and Toru Kanazawa and Yasuyuki Miyamoto},
  title = {Operation of 16-nm InGaAs channel multi-gate MOSFETs with regrown source/drain},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100725183,
  author = {Vikrant Upadhyaya and Toru Kanazawa and Yasuyuki Miyamoto},
  title = {Evaluation of electrical properties of HfS<sub>2</sub> thin flakes obtained by mechanical exfoliation},
  booktitle = {信学技報},
  year = 2016,
}

@inproceedings{CTT100740893,
  author = {Wenbo Lin and Shinjiro Iwata and Koichi Fukuda and YASUYUKI MIYAMOTO},
  title = {[20p-S422-10] 短チャネルTFET におけるソース-ドレイン間直接トンネリングのオフ電流への寄与},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100725184,
  author = {Haruki Kinoshita and Nobukazu Kise and Netsu Seikou and Toru Kanazawa and YASUYUKI MIYAMOTO},
  title = {再成長S/Dを有するInGaAsマルチゲートMOSFETのLch=16nm動作},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100725116,
  author = {Upadhyaya Vikrant and kanazawa Toru and Miyamoto Yasuyuki},
  title = {Measures for mitigating environmental degradation of Two Dimensional Hafnium Disulfide Field Effect Transistor},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100740895,
  author = {Haruki Kinoshita and Nobukazu Kise and Netsu Seikou and Toru Kanazawa and YASUYUKI MIYAMOTO},
  title = {[22p-W541-5] 再成長S/Dを有するInGaAsマルチゲートMOSFETのLch=16nm動作},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100715673,
  author = {Y. Miyamoto},
  title = {Steep slope devices with InGaAs channel for post Si CMOS application},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100717942,
  author = {K. Makiyama and S. Ozaki and T. Ohki and N. Okamoto and Y. Minoura and Y. Niida and Y. Kamada and K. Joshin and K. Watanabe and Y. Miyamoto},
  title = {Collapse Free High Power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100709147,
  author = {Toru Kanazawa and Tomohiro Amemiya and Atsushi Ishikawa and Vikrant Upadhyaya and Takuo Tanaka and Kenji Tsuruta and Yasuyuki Miyamoto},
  title = {HfS2 Electric Double Layer Transistor with High Drain Current},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100800887,
  author = {Haruki Kinoshita and Toru Kanazawa and Netsu Seikou and Yuichi Mishima and YASUYUKI MIYAMOTO},
  title = {再成長ソース/ドレインを有するInGaAsマルチゲートMOSFET作製プロセス},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100800888,
  author = {Atsushi Yukimachi and YASUYUKI MIYAMOTO},
  title = {超格子FET のためのAlAs/InGaAsダブルバリアp-i-n 接合ダイオード},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100721929,
  author = {Y. Miyamoto and M. Fujimatsu and K. Ohashi and A. Yukimachi and S. Iwata},
  title = {Steep subthreshold slope in InGaAs MOSFET},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100721938,
  author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and K. Ohsawa and Y. Mishima and M. Fujimatsu and K. Ohashi and S. Nestu and S. Iwata},
  title = {InGaAs channel for low supply voltage},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100717934,
  author = {S. Iwata and W. Lin and K. Fukuda and Y. Miyamoto},
  title = {Design of drain for low off current in GaAsSb/InGaAs tunnel FETs},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100721910,
  author = {H.Kinoshita and S.Netsu and Y.mishima and T.Kanazawa and Y.Miyamoto},
  title = {Fabrication of InGaAs channel multi-gate MOSFETs with MOVPE regrown source/drain},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100721886,
  author = {K. Ohsawa and Y. Mishima and Y. Miyamoto},
  title = {Operation of 13-nm channel length InGaAs-MOSFET with n-InP source},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100716504,
  author = {S. Netsu and T. Kanazawa and Y. Miyamoto},
  title = {Improvement of Interface Property of HfO2/Al2O3/In0.53Ga0.47As Using Nitrogen Plasma Cleaning and Hydrogen Annealing},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100677904,
  author = {Tomohiro Amemiya and Atsushi Ishikawa and Toru Kanazawa and Nobuhiko Nishiyama and Yasuyuki Miyamoto and Takuo Tanaka and Shigehisa Arai},
  title = {(Invited) Possibility of permeability control on InP-based photonic integration platform},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693222,
  author = {T. Kanazawa and T. Amemiya and A. Ishikawa and V. Upadhyaya and K. Tsuruta and T. Tanaka and Y. Miyamoto},
  title = {Fabrication of Thin-Film HfS2 FET},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100682919,
  author = {Tomohiro Amemiya and Atsushi Ishikawa and Toru Kanazawa and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and Takuo Tanaka and SHIGEHISA ARAI},
  title = {光通信素子における透磁率制御の可能性},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693240,
  author = {Atsushi Yukimachi and Masashi Kashiwano and YASUYUKI MIYAMOTO},
  title = {超格子FETに向けたダブルバリアp-i-n接合ダイオード},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693239,
  author = {Netsu Seikou and Toru Kanazawa and YASUYUKI MIYAMOTO},
  title = {HfO2/Al2O3/In0.53Ga0.47As界 面に対する窒素プラズマクリーニング後の水素アニール効果に関する研究},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693238,
  author = {Haruki Kinoshita and Toru Kanazawa and Netsu Seikou and Yuichi Mishima and YASUYUKI MIYAMOTO},
  title = {再成長ソース/ドレインを有するInGaAsマルチゲートMOSFET作製プロセスに関する研究},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693237,
  author = {Kazuto Ohsawa and Yuichi Mishima and YASUYUKI MIYAMOTO},
  title = {InGaAs-MOSFETのチャネル長微細化に関する研究},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693236,
  author = {YASUYUKI MIYAMOTO and Atsushi Yukimachi},
  title = {超格子ソースによるスティープスロープFETの可能性},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693235,
  author = {Shinjiro Iwata and Kazumi Ohashi and YASUYUKI MIYAMOTO},
  title = {GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおけるI-V特性の不純物濃度依存性},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100682907,
  author = {Toru Kanazawa and Tomohiro Amemiya and Atsushi Ishikawa and Kenji Tsuruta and Takuo Tanaka and YASUYUKI MIYAMOTO},
  title = {薄膜HfS2 FET},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100682905,
  author = {Atsushi Ishikawa and Toru Kanazawa and Tomohiro Amemiya and Kenji Tsuruta and Takuo Tanaka and YASUYUKI MIYAMOTO},
  title = {機械的剥離法を用いたHfS2原子薄膜の作製と基礎物性の評価},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100679171,
  author = {R. Yamanaka and T. Kanazawa and E. Yagyu and Y. Miyamoto},
  title = {Normally-off AlGaN/GaN HEMT using Digital Etching Technique},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100693231,
  author = {Kazumi Ohashi and Motohiko Fujimatsu and YASUYUKI MIYAMOTO},
  title = {GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける SSとON電流のボディ幅依存性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100679170,
  author = {K. Ohashi and M. Fujimatsu and Y. Miyamoto},
  title = {Body width dependence of subthreshold slope and on-current in GaAsSb/InGaAs Double Gate Vertical Tunnel FETs},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674604,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and JoonHyun Kang and Zhichen Gu and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and Takuo Tanaka and SHIGEHISA ARAI},
  title = {［依頼講演］透磁率制御メタマテリアルを装荷した光変調器},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100693230,
  author = {YASUYUKI MIYAMOTO},
  title = {低消費電力と高速動作を両立させるInP系電子デバイス},
  booktitle = {エレクトロニクスソサエティ受賞記念講演},
  year = 2014,
}

@inproceedings{CTT100693234,
  author = {Ryota Yamanaka and Toru Kanazawa and 柳生栄治 and YASUYUKI MIYAMOTO},
  title = {デジタルエッチングを用いたGaN HEMTのノーマリーオフ化},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100693229,
  author = {YASUYUKI MIYAMOTO and Toru Kanazawa and Yosiharu Yonai and atsushi kato and Motohiko Fujimatsu and Masashi Kashiwano and Kazuto Ohsawa and Kazumi Ohashi},
  title = {低電圧/高速動作にむけたInGaAs MOSFETソース構造},
  booktitle = {IEICE Technical Report},
  year = 2014,
}

@inproceedings{CTT100693228,
  author = {Kazumi Ohashi and Motohiko Fujimatsu and YASUYUKI MIYAMOTO},
  title = {GaAsSb/InGaAsヘテロ接合を用いたDouble-Gate Tunnel FETの理論特性とその実験的検証},
  booktitle = {IEICE Technical Report},
  year = 2014,
}

@inproceedings{CTT100661087,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and JoonHyun Kang and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and Takuo Tanaka and SHIGEHISA ARAI},
  title = {(Invited) Meta-photonics for Advanced InP-based Photonic Integration},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100679169,
  author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and K. Ohsawa and Y. Mishima and T. Irisawa and M. Oda and T. Tezuka},
  title = {(Invited) Growth Process for High Performance of InGaAs MOSFETs},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100679168,
  author = {Y. Mishima and T. Kanazawa and H. Kinoshita and E. Uehara and Y. Miyamoto},
  title = {InGaAs tri-gate MOSFETs with MOVPE regrown source/drain},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100679167,
  author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and A. Kato and M. Fujimatsu and M. Kashiwano and K. Ohsawa and K. Ohashi},
  title = {(Invited) InGaAs MOSFET Source Structures Toward High Speed/low Power Applications},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100680432,
  author = {入澤寿史 and 小田穣 and 池田圭司 and 守山佳彦 and 三枝栄子 and JevaswanWipakorn and 前田辰朗 and 市川麿 and 長田剛規 and YASUYUKI MIYAMOTO and 秦雅彦 and 手塚勉},
  title = {高移動度(111)B面をチャネルに有する三角形状InGaAs-OI nMOSFET},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100679180,
  author = {入澤寿史 and 小田穣 and 池田圭司 and 守山佳彦 and 三枝栄子 and JevaswanWipakorn and 前田辰朗 and 市川麿 and 長田剛規 and YASUYUKI MIYAMOTO and 秦雅彦 and 手塚勉},
  title = {MOVPE再成長により形成した(111)B面を有する高移動度三角形状InGaAs-OI nMOSFET},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100693227,
  author = {大石敏之 and Yuutarou Yamaguchi and 大塚浩志 and 山中宏治 and 野上洋一 and 福本宏 and YASUYUKI MIYAMOTO},
  title = {GaNショットキーバリアダイオードの温度依存性モデル},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100693225,
  author = {Yuutarou Yamaguchi and 大石敏之 and 大塚浩志 and 山中宏治 and TeoKoonHoo and YASUYUKI MIYAMOTO},
  title = {GaN HEMTの過渡応答バイアス依存性によるトラップ解析},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100679181,
  author = {Yuichi Mishima and Toru Kanazawa and Haruki Kinoshita and Eiji Uehara and YASUYUKI MIYAMOTO},
  title = {再成長ソース/ドレインを有するInGaAsチャネルトライゲートMOSFET},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100679179,
  author = {入澤寿史 and 小田穣 and 池田圭司 and 守山佳彦 and 三枝栄子 and JevaswanWipakorn and 前田辰朗 and 市川麿 and 長田剛規 and YASUYUKI MIYAMOTO and 秦雅彦 and 手塚勉},
  title = {MOVPE再成長により形成した(111)B面を有する高移動度三角形状InGaAs-OI nMOSFET},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100679178,
  author = {Toru Kanazawa and Yuichi Mishima and Haruki Kinoshita and Eiji Uehara and YASUYUKI MIYAMOTO},
  title = {MOVPE再成長ソース/ドレインを有するInGaAsトライゲートMOSFET},
  booktitle = {IEICE technical report},
  year = 2014,
}

@inproceedings{CTT100679165,
  author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and A. Kato and K. Ohsawa and M. Oda and T. Irisawa and T. Tezuka},
  title = {Heavily doped epitaxially grown source in InGaAs MOSFET for high drain current density},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100664543,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and JoonHyun Kang and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and Takuo Tanaka and SHIGEHISA ARAI},
  title = {メタマテリアルを用いたInP系プラットフォームにおける透磁率制御},
  booktitle = {IEICE Technical Report},
  year = 2013,
}

@inproceedings{CTT100679166,
  author = {T. Irisawa and M. Oda and K. Ikeda and Y. Moriyama and E. Mieda and W. Jevasuwan and T. Maeda and O. Ichikawa and T. Osada and M. Hata and Y. Miyamoto and T. Tezuka},
  title = {High Electron Mobility Triangular InGaAs-OI nMOSFETs with (111)B Side Surfaces Formed by MOVPE Growth on Narrow Fin Structures},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100676854,
  author = {Yuki Atsumi and N. Taksatorn and N. Nishiyama and Y. Miyamoto and S.Arai},
  title = {Miniaturization of exposure area for electron beam lithography using proximity effect correction toward Si optical circuits},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654650,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and Seiji Myoga and JoonHyun Kang and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and Takuo Tanaka and SHIGEHISA ARAI},
  title = {(Invited) Photonic metamaterials in semiconductor optical devices},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100678939,
  author = {K. Ohsawa and A. Kato and T. Sagai and T. Kanazawa and E. Uehara and Y. Miyamoto},
  title = {Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100791463,
  author = {山口 裕太郎 and 林 一夫 and 大石 敏之 and 大塚 浩志 and 山中 宏治 and YASUYUKI MIYAMOTO},
  title = {C-10-1 ソースフィールドプレートGaN HEMTのドレインソース間容量とドレイン抵抗のトレードオフの解析(C-10.電子デバイス,一般セッション)},
  booktitle = {電子情報通信学会ソサイエティ大会講演論文集},
  year = 2013,
}

@inproceedings{CTT100679176,
  author = {YASUYUKI MIYAMOTO and Toru Kanazawa},
  title = {InGaAs MOSFETの現状と将来展望},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100679174,
  author = {Masashi Kashiwano and Atsushi Yukimachi and YASUYUKI MIYAMOTO},
  title = {急峻なSS特性の為のInGaAs/InP超格子FETにおけるキャリア濃度依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100679172,
  author = {Kazuto Ohsawa and atsushi kato and Takeru Sagai and Toru Kanazawa and Eiji Uehara and YASUYUKI MIYAMOTO},
  title = {高電流密度化に向けたInPソースを有するIII-V-OI InGaAs MOSFETのチャネル厚依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100679164,
  author = {M. Kashiwano and A. Yukimachi and Y. Miyamoto},
  title = {Dependence of the Carrier Concentration in InGaAs/InP Superlattice-based FETs with a Steep Subthreshold Slope},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100678948,
  author = {Y. Yamaguchi and K. Hayashi and T. Oishi and H. Otsuka and K. Yamanaka and Y. Miyamoto},
  title = {Analysis on trade-off between drain resistance and drain-source capacitance of source field plate GaN HEMT},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100678944,
  author = {M. Oda and T. Irisawa and E. Mieda and Y. Kurashima and H. Takagi and W. Jevasuwan and T. Maeda and O. Ichikawa and T. Ishihara and T. Osada and Y. Miyamoto and T. Tezuka},
  title = {Suppression of short channel effects in accumulation-type UTB-InGaAs-OI nMISFETs with raised S/D fabricated by gate-last process},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100678936,
  author = {Y. Miyamoto},
  title = {InGaAs channel MOSFET for high-speed/low-power application},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100653652,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and Seiji Myoga and Eijun Murai and Takahiko Shindo and J. Kang and Nobuhiko Nishiyama and Yasuyuki Miyamoto and Takuo Tanaka and Shigehisa Arai},
  title = {Electrically-driven Permeability-controlled Optical Modulator using Mach-Zehnder Interferometer with Metamaterial},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659719,
  author = {A. Kato and T. Kanazawa and Eiji Uehara and Y. Yonai and Y. Miyamoto},
  title = {Sub-50-nm InGaAs MOSFET with n-InP source on Si substrate},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659773,
  author = {YASUYUKI MIYAMOTO},
  title = {超高速トランジスタ技術の現状と展望},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659774,
  author = {YASUYUKI MIYAMOTO},
  title = {東工大の微細加工プラットフォームにおける支援事例},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659775,
  author = {atsushi kato and Yosiharu Yonai and Toru Kanazawa and YASUYUKI MIYAMOTO},
  title = {Si 基板上 InGaAs-MOSFET の微細化に関する研究},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100648390,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and Seiji Miyouga and Eijun Murai and Takahiko Shindou and JoonHyun Kang and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and Takuo Tanaka and SHIGEHISA ARAI},
  title = {微細金属構造をもつ導波路型光デバイスにおける相互作用距離の解析},
  booktitle = {第60回応用物理学関係連合講演会},
  year = 2013,
}

@inproceedings{CTT100659771,
  author = {YASUYUKI MIYAMOTO and Motohiko Fujimatsu},
  title = {GaAsSb/InGaAs 縦型トンネル FET},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659772,
  author = {Takeru Sagai and Eiji Uehara and Kazuto Ohsawa and YASUYUKI MIYAMOTO},
  title = {n-InP ソースを持つT ゲート構造 InGaAs-MOSFET の高周波特性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100645875,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and Seiji Myoga and Eijun Murai and Takahiko Shindo and J. Kang and Nobuhiko Nishiyama and Yasuyuki Miyamoto and Takuo Tanaka and Shigehisa Arai},
  title = {Permeability-controlled Optical Modulator with Tri-gate Metamaterial},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659770,
  author = {YASUYUKI MIYAMOTO},
  title = {微細加工ナノプラットフォームコンソーシアムによる設備共用の取り組み},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659769,
  author = {YASUYUKI MIYAMOTO and Toru Kanazawa},
  title = {MOSFET低電圧化の為のInGaAs チャネル},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100659716,
  author = {Y. Yamaguchi and K. Hayashi and T. Oishi and H. Otsuka and T. Nanjo and K. Yamanaka and M. Nakayama and Y. Miyamoto},
  title = {Simulation study and reduction of reverse gate leakage current for GaN HEMTs},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100659714,
  author = {M. Kashiwano and J. Hirai and S. Ikeda and M. Fujimatsu and Y. Miyamoto},
  title = {High Open Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor using Heavily Doped Drain Region and Narrow Channel Mesa},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100639796,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and Seiji Miyouga and Eijun Murai and Takahiko Shindou and JoonHyun Kang and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and Takuo Tanaka and SHIGEHISA ARAI},
  title = {---},
  booktitle = {第73回秋季応用物理学会学術講演会},
  year = 2012,
}

@inproceedings{CTT100659768,
  author = {Motohiko Fujimatsu and YASUYUKI MIYAMOTO},
  title = {GaAsSb/InGaAs ヘテロ接合を用いた縦型トンネル FET における サブスレッショルドスロープの改善},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100659767,
  author = {atsushi kato and Yosiharu Yonai and Toru Kanazawa and YASUYUKI MIYAMOTO},
  title = {Si 基板上 InGaAs-MOSFET の微細化に関する研究},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100659766,
  author = {Masashi Kashiwano and Jun Hirai and Shunsuke Ikeda and Motohiko Fujimatsu and YASUYUKI MIYAMOTO},
  title = {半導体ドレイン層及び狭チャネルメサ幅による縦型 InGaAs チャネル MISFET の高電圧利得化},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100659765,
  author = {Takeru Sagai and Yosiharu Yonai and YASUYUKI MIYAMOTO},
  title = {InGaAs チャネル MOSFET の EOT 削減による 伝達コンダクタンス向上},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100659764,
  author = {Keishi Tanaka and YASUYUKI MIYAMOTO},
  title = {55 nm 幅エミッタInP HBT および電流密度とエミッタ幅の関係},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100659763,
  author = {大石敏之 and 林一夫 and 佐々木肇 and Yuutarou Yamaguchi and 大塚浩志 and 山中宏治 and 中山正敏 and YASUYUKI MIYAMOTO},
  title = {トランジスタ動作時における GaN HEMT ゲートリークのデバイスシミュレーションによる解析},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100659713,
  author = {T. Oishi and K. Hayashi and Y. Yamaguchi and H. Otsuka and K.  Yamanaka and M. Nakayama and Y. Miyamoto},
  title = {Mechanism study of gate leakage current for AlGaN/GaN HEMT structure under high reverse bias by TSB model and TCAD simulation},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100659707,
  author = {Y. Yamaguchi and K. Hayashi and T. Oishi and H. Otsuka and K. Yamanaka and M. Nakayama and Y. Miyamoto},
  title = {Analysis on trade-off between electric field and gate-drain capacitance for GaN HEMT by T-CAD simulation},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100659705,
  author = {M. Fujimatsu and H. Saito and Y. Miyamoto},
  title = {71 mV/dec of Sub-Threshold Slope in Vertical Tunnel Field-Effect Transistors with GaAsSb/InGaAs Heterostructure},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100659706,
  author = {K. Tanaka and Y. Miyamoto},
  title = {InP HBT with 55-nm-wide Emitter and Relationship between Emitter Width and Current Density},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100791532,
  author = {山口 裕太郎 and 林 一夫 and 大石 敏之 and 大塚 浩志 and 小山 英寿 and 加茂 宣卓 and 山中 宏治 and 中山 正敏 and YASUYUKI MIYAMOTO},
  title = {C-10-5 GaN HEMTの電界とゲートドレイン間容量のトレードオフとPAEへの影響についてのシミュレーション解析(C-10. 電子デバイス,一般セッション)},
  booktitle = {電子情報通信学会ソサイエティ大会講演論文集},
  year = 2012,
}

@inproceedings{CTT100642429,
  author = {Masashi Kashiwano and Jun Hirai and Shunsuke Ikeda and Motohiko Fujimatsu and YASUYUKI MIYAMOTO},
  title = {半導体ドレイン層及び狭チャネルメサ幅による縦型InGaAsチャネルMISFETの高電圧利得化},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642418,
  author = {YASUYUKI MIYAMOTO and Yosiharu Yonai and Toru Kanazawa},
  title = {エピタキシャル成長ソースによるInGaAsMOSFETの高電流密度化},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642425,
  author = {YASUYUKI MIYAMOTO and Yosiharu Yonai and Toru Kanazawa},
  title = {エヒ?タキシャル成長ソースによる InGaAs MOSFET の高電流密度化},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642426,
  author = {Yosiharu Yonai and Toru Kanazawa and Shunsuke Ikeda and YASUYUKI MIYAMOTO},
  title = {InPエッチング異方性による微細InGaAsチャネルMOSFET},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642427,
  author = {Yuutarou Yamaguchi and 大石敏之 and 大塚浩志 and 山中宏治 and 南條拓真 and 中山正敏 and 平野嘉仁 and YASUYUKI MIYAMOTO},
  title = {デバイスシミュレーションによるGaN HEMTのゲートリークの解析},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642428,
  author = {Masashi Kashiwano and Jun Hirai and Shunsuke Ikeda and Motohiko Fujimatsu and YASUYUKI MIYAMOTO},
  title = {GaN HEMT のソース・ドレイン間容量のデバイスシミュレーションによる解析},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642424,
  author = {YASUYUKI MIYAMOTO and Masayuki Yamada and Ken Uchida},
  title = {InGaAs MOSFETにおけるソース充電時間の検討},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642423,
  author = {YASUYUKI MIYAMOTO and Yosiharu Yonai and Toru Kanazawa},
  title = {InGaAs MOSFETの高電流密度化},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642380,
  author = {Jun Hirai and Tomoki Kususaki and Shunsuke Ikeda and YASUYUKI MIYAMOTO},
  title = {Vertical InGaAs MOSFET with HfO2 gate},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642417,
  author = {YASUYUKI MIYAMOTO and Yosiharu Yonai and Toru Kanazawa},
  title = {InGaAs MOSFETの高電流密度化},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100642377,
  author = {YASUYUKI MIYAMOTO and Hisashi Saito and Toru Kanazawa},
  title = {High-current-density InP ultrafine devices for high-speed operation},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628832,
  author = {A. Kato and T. Kanazawa and S. Ikeda and Y. Yonai and YASUYUKI MIYAMOTO},
  title = {Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with A Back Source Electrode},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628834,
  author = {Y. Yamaguchi and T. Sagai and Y. Miyamoto},
  title = {Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100642422,
  author = {Motohiko Fujimatsu and Hisashi Saito and YASUYUKI MIYAMOTO},
  title = {GaAsSb/InGaAsヘテロ接合を用いた縦型トンネルFETの作製・評価},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100642421,
  author = {Atsushi Kato and Toru Kanazawa and YASUYUKI MIYAMOTO},
  title = {ソース裏面電極によるInP/InGaAsコンポジットチャネルMOSFETのアクセス抵抗低減},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100642420,
  author = {Shunsuke Ikeda and Toru Kanazawa and YASUYUKI MIYAMOTO},
  title = {電子ランチャを持つInGaAs MOSFETにおけるヘテロ障壁高さ依存性},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100642419,
  author = {YASUYUKI MIYAMOTO and Toru Kanazawa},
  title = {InP系化合物半導体を用いたMOSFETの技術動向},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628829,
  author = {T. Kanazawa and R. Terao and S. Ikeda and Y. Miyamoto},
  title = {MOVPE-regrown source/drain regions for III-V MOSFETs with high drain current of 1.28 A/mm},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628831,
  author = {N. Takebe and Y. Miyamoto},
  title = {Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO2 Wires},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100791685,
  author = {大石 敏之 and 大塚 浩志 and 山中 宏治 and 中山 正敏 and 平野 嘉仁 and YASUYUKI MIYAMOTO},
  title = {C-10-7 緑色光照射時の等価回路パラメータ測定によるGaN HEMTのトラップ解析(C-10.電子デバイス,一般セッション)},
  booktitle = {電子情報通信学会ソサイエティ大会講演論文集},
  year = 2011,
}

@inproceedings{CTT100619806,
  author = {Naoaki Takebe and YASUYUKI MIYAMOTO},
  title = {InP/InGaAs DHBT におけるSiO2細線埋め込みによるベースコレクタ間容量の削減},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100619805,
  author = {Yuutarou Yamaguchi and Takeru Sagai and YASUYUKI MIYAMOTO},
  title = {基板転写プロセスを用いたSi基板上InP/InGaAs SHBTの作製},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100619803,
  author = {Yutaka Matsumoto and Hisashi Saito and YASUYUKI MIYAMOTO},
  title = {縦型InGaAs MIS-FETのソース寄生容量の削減},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100619802,
  author = {Motohiko Fujimatsu and Hisashi Saito and Tomoki Kususaki and Yutaka Matsumoto and Jun Hirai and YASUYUKI MIYAMOTO},
  title = {GaAsSb/InGaAsヘテロ接合を用いた縦型トンネルFETに関する研究},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100619804,
  author = {Toru Kanazawa and Ryousuke Terao and Yuutarou Yamaguchi and Shunsuke Ikeda and Yosiharu Yonai and atsushi kato and YASUYUKI MIYAMOTO},
  title = {裏面電極を有するⅢ－Ⅴ族量子井戸型チャネルMOSFET},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100642378,
  author = {Motohiko Fujimatsu and Hisashi Saito and YASUYUKI MIYAMOTO},
  title = {GaAsSb/InGaAs vertical tunnel FET with a 25 nm-wide channel mesa structure},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100791071,
  author = {Matsumoto, Y. and Saito, H. and YASUYUKI MIYAMOTO},
  title = {Reduction of source parasitic capacitance in vertical InGaAs MISFET},
  booktitle = {Conference Proceedings - International Conference on Indium Phosphide and Related Materials},
  year = 2011,
}

@inproceedings{CTT100642379,
  author = {Yosiharu Yonai and Toru Kanazawa and Shunsuke Ikeda and YASUYUKI MIYAMOTO},
  title = {High Drain Current (>2A/mm) InGaAs channel MOSFET at VD=0.5V with Shrinkage of Channel Length by InP Anisotropic Etching},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100619798,
  author = {Chien-I Kuo and Wee Chin Lim and Heng-Tung Hsu and Chin-Te Wang and Li-Han Hsu and Faiz Aizad and Guo-Wei Hung and Yasuyuki Miyamoto and Edward Yi Chang},
  title = {Bonding Temperature Effect on the Performance of Flip Chip Assembled 150nm mHEMT Device on Organic Substrate},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100619797,
  author = {Y. Miyamoto and H. Saito and T. Kanazawa},
  title = {Submicron-channel InGaAs MISFET with epitaxially grown source},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100612622,
  author = {Toru Kanazawa and Ryousuke Terao and Yuutarou Yamaguchi and Shunsuke Ikeda and Yosiharu Yonai and atsushi kato and YASUYUKI MIYAMOTO},
  title = {InP/InGaAs MOSFET with back-gate electrode bonded on Si substrate},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100612623,
  author = {Ryousuke Terao and Toru Kanazawa and Shunsuke Ikeda and Yosiharu Yonai and atsushi kato and YASUYUKI MIYAMOTO},
  title = {Submicron InP/InGaAs channel n-MOSFET with regrown InGaAs and Al2O3 gate dielectric},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100612624,
  author = {Toru Kanazawa and Ryousuke Terao and Yuutarou Yamaguchi and Shunsuke Ikeda and Yosiharu Yonai and YASUYUKI MIYAMOTO},
  title = {InP/InGaAs MOSFET with Back-Electrode Structure Bonded on Si Substrate Using a BCB Adhesive Layer},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100791524,
  author = {YASUYUKI MIYAMOTO},
  title = {CI-2-2 HMET,HBTによるTHz波源(CI-2.テラヘルツ波源デバイスの現状と展望,依頼シンポジウム,ソサイエティ企画)},
  booktitle = {電子情報通信学会ソサイエティ大会講演論文集},
  year = 2010,
}

@inproceedings{CTT100610521,
  author = {Faiz Aizad and Heng-Tung Hsu and Chien-I Kuo and Chien-Ying Wu and Edward Yi Chang and Yasuyuki Miyamoto and Guo-Wei Huang and Yu-Lin Chen and Yu-Sheng Chiu},
  title = {Investigation Logic Performances of 80-nm HEMTs for InxGa1?xAs},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610517,
  author = {M. Yamada and T. Uesawa and Y. Miyamoto and K. Furuya},
  title = {Deviation from Proportional Relationship between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operating at High Current Density},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610518,
  author = {T. Kanazawa and K. Wakabayashi and H. Saito and R. Terao and T. Tajima and S. Ikeda and Y. Miyamoto and K. Furuya},
  title = {Submicron InP/InGaAs composite channel MOSFETs with selectively regrown n+-source/drain buried in channel undercut},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610522,
  author = {Y. Miyamoto and T. Kanazawa and H. Saito},
  title = {InGaAs MISFET with epitaxially grown source},
  booktitle = {InGaAs MISFET with epitaxially grown source},
  year = 2010,
}

@inproceedings{CTT100610523,
  author = {H. Saito and Y. Miyamoto and K. Furuya},
  title = {Vertical InGaAs FET with hetero-launcher and undoped channel},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610520,
  author = {C.-T. Wang and C.-I. Kuo and W.-C. Lim and L.-H. Hsu and H.-T. Hsu and Y. Miyamoto and E.Y. Chang and S.-P. Tsai and Y.-S. Chiu},
  title = {An 80 nm In0.7Ga0.3As MHEMT with Flip-Chip Packaging for W-Band Low Noise Applications},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610497,
  author = {Takashi Kobayashi and Hiroyuki Suzuki and Naoaki Takebe and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {SiO2細線埋め込みInP/InGaAs DHBTの作製},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610506,
  author = {H. Saito and Y. Miyamoto and K. Furuya},
  title = {Selective undercut etching for ultra narrow mesa structure in vertical InGaAs channel MISFET},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610505,
  author = {Toru Kanazawa and kazuya wakabayashi and Hisashi Saito and Ryousuke Terao and Tomonori Tajima and Shunsuke Ikeda and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {III-V族サブミクロンチャネルを有する高移動度MOSFET},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610493,
  author = {kazuya wakabayashi and Toru Kanazawa and Hisashi Saito and Ryousuke Terao and Shunsuke Ikeda and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {再成長ソースを有するサブミクロンInP/InGaAs nMOSFETの電流電圧特性},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610494,
  author = {Ryousuke Terao and Toru Kanazawa and Hisashi Saito and kazuya wakabayashi and Shunsuke Ikeda and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {Al2O3ゲート絶縁膜を用いたInP/InGaAsチャネル n-MOSFETの電気特},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610495,
  author = {Yuji Isogai and Takashi Kobayashi and Yuutarou Yamaguchi and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {Si基板上へ転写したInP系HBTの動作},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610496,
  author = {Hisashi Saito and Tomoki Kususaki and Yutaka Matsumoto and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {縦型InGaAs チャネルMISFET の極微細メサに向けた選択的ウェットエッチング},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100597640,
  author = {Toru Kanazawa and kazuya wakabayashi and Hisashi Saito and Ryousuke Terao and Tomonori Tajima and Shunsuke Ikeda and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {InP/InGaAs composite channel MOSFET with Al2O3 gate dielectric},
  booktitle = {IEICE Technical Report, Electron Devices},
  year = 2010,
}

@inproceedings{CTT100610504,
  author = {Masayuki Yamada and Takafumi Uesawa and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {HBTにおける高電流密度動作時エミッタ充電時間の電流反比例特性からの逸脱},
  booktitle = {電子情報通信学会技術研究報告 電子デバイス},
  year = 2010,
}

@inproceedings{CTT100610527,
  author = {YASUYUKI MIYAMOTO},
  title = {テラヘルツ帯におけるトランジスタ},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100598422,
  author = {YASUYUKI MIYAMOTO},
  title = {Vertical InGaAs FET with hetero-launcher and undoped channel},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100610500,
  author = {K. Wakabayashi and T. Kanazawa and H. Saito and R. Terao and S. Ikeda and Y. Miyamoto and K. Furuya},
  title = {InP/In0.53Ga0.47As composite channel n-MOSFETwith heavily dopedregrown source/drain structure},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100610499,
  author = {H. Saito and Y. Miyamoto and K. Furuya},
  title = {Fabrication of vertical InGaAs channel MISFET with heterostructure launcher and undoped channel},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100610498,
  author = {YASUYUKI MIYAMOTO},
  title = {InGaAs/InP MISFET},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100591555,
  author = {Toru Kanazawa and Hisashi Saito and Kazuya Wakabayashi and Ryousuke Terao and Tomonori Tajima and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {Fabrication of InP/InGaAs Undoped Channel MOSFET with Selectively Regrown N<sup>+</sup>-InGaAs Source Region},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100610488,
  author = {Tomoki Kususaki and Hisashi Saito and Yutaka Matsumoto and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {縦型InGaAs-MISFETの試作},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100610491,
  author = {kazuya wakabayashi and Toru Kanazawa and Hisashi Saito and Tomonori Tajima and Ryousuke Terao and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {「再成長ソースを有するアンドープチャネルInP/InGaAs MOSFETの電流特性},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100610492,
  author = {Masayuki Yamada and Takafumi Uesawa and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {HBTにおける超高速動作時エミッタ充電時間の理論的解析},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100610502,
  author = {Naoaki Takebe and Hiroaki Yamashita and Shinnosuke Takahashi and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {SiO2細線埋込InP系HBTにおけるCBr4を使ったin-situエッチング},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100591554,
  author = {Kazuya Wakabayashi and Toru Kanazawa and Hisashi Saito and Tomonori Tajima and Ryosuke Terao and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {I-V characteristics of undoped channel InP/InGaAs MOSFET with regrown source region},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100591551,
  author = {Toru Kanazawa and Hisashi Saito and kazuya wakabayashi and Tomonori Tajima and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {High mobility III-V MOSFET with n<sup>+</sup>-source regrown by MOSFET},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100610490,
  author = {Hisashi Saito and Tomoki Kususaki and Yutaka Matsumoto and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {ヘテロランチャと真性チャネルを有する縦型InGaAs-MISFET の高駆動能力動作},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100598419,
  author = {YASUYUKI MIYAMOTO and Hiroaki Yamashita and Naoaki Takebe and KAZUHITO FURUYA},
  title = {In-situ Etching in MOVPE for Thin Collector of InP HBT with Buried SiO2 Wire},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100598420,
  author = {Takafumi Uesawa and Masayuki Yamada and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {Monte Carlo Analysis of Base Transit Times of InP/Gaines Heterojunction Bipolar Transistors with Ultrathin Bases},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100598417,
  author = {YASUYUKI MIYAMOTO and Shinnosuke Takahashi and Takashi Kobayashi and Hiroyuki Suzuki and KAZUHITO FURUYA},
  title = {Evaluation of collector current spreading of InGaAs SHBT with 75-nm-thick collector},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100610503,
  author = {Naoaki Takebe and Hiroaki Yamashita and Shinnosuke Takahashi and Hisashi Saito and Takashi Kobayashi and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {SiO2細線埋込InP系HBTにおけるCBr4を使ったIn-situエッチング},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100598415,
  author = {YASUYUKI MIYAMOTO and Toru Kanazawa and Hisashi Saito and KAZUHITO FURUYA},
  title = {InGaAs/InP MISFET with epitaxially grown source},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100576971,
  author = {Chien-I  Kuo and Heng-Tung  Hsu and Chung Li and Chien Ying  Wu and Edward Yi  Chang and YASUYUKI MIYAMOTO and Y.-L. Chen and D. Biswas},
  title = {A 40-nm-Gate InAs/InGaAs Composite-Channel HEMT with 2200 mS/mm and 500-GHz fT},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100576790,
  author = {H. Saito and Y. Miyamoto and K. Furuya},
  title = {Vertical InGaAs MOSFET with Hetero-Launcher and Undoped Channel},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100583670,
  author = {Toru Kanazawa and KAZUHITO FURUYA and YASUYUKI MIYAMOTO and Hisashi Saito and kazuya wakabayashi and Tomonori Tajima},
  title = {InP/InGaAs-channel MOSFET with MOVPE Selective Regrown Source},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100610501,
  author = {Hisashi Saito and Tomoki Kususaki and Yutaka Matsumoto and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {Vertical InGaAs-MOSFET with heterostructure launcher and intrinsic channel},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100583674,
  author = {Toru Kanazawa and KAZUHITO FURUYA and YASUYUKI MIYAMOTO and Hisashi Saito and kazuya wakabayashi and Tomonori Tajima},
  title = {I-V characteristics of III-V MOSFET with MOVPE regrown source region},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100576984,
  author = {YASUYUKI MIYAMOTO and Toru Kanazawa},
  title = {III-V ナノデバイス},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100576982,
  author = {Takafumi Uesawa and Masayuki Yamada and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {Reduction of the base transit time in ultra-thin graded base InP/GaInAs Heterojunction Bipolar Transistor},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100576981,
  author = {Juntaro Minezaki and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {Enhanced Possibility of Electron Wave Diffraction Observation with InP/GaInAs Phase-Shifter},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100576966,
  author = {Edward Yi  Chang and Chien-I  Kuo and Heng-Tung  Hsu and YASUYUKI MIYAMOTO and Chia Ta Chang and Chien Ying  Wu},
  title = {Evaluation of InAs QWFET for Low Power Logic applications},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100576963,
  author = {YASUYUKI MIYAMOTO},
  title = {InGaAs MISFET with hetero-laucher},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100576791,
  author = {Hisashi Saito and Toru Kanazawa and Yasuyuki Miyamoto and Kazuhito Furuya},
  title = {Fabrication of vertical InGaAs-MOSFET with heterostructure launcher and intrinsic channel},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100576972,
  author = {Takafumi Uesawa and Masayuki Yamada and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {Reduction of the Base Transit Time in Ultra-thin Graded-Base InP/GaInAs Heterojunction Bipolar Transistor},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100565411,
  author = {Yasuyuki Miyamoto and Takashi Hasegawa and Hisashi Saito and Kazuhito Furuya},
  title = {RF Characteristics of Schottky-Gate-Controlled Hot Electron Transistor},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100583676,
  author = {Toru Kanazawa and KAZUHITO FURUYA and YASUYUKI MIYAMOTO and Hisashi Saito and kazuya wakabayashi and Tomonori Tajima},
  title = {Lateral buried growth of n<sup>+</sup>-InGaAs source/drain region for high drive current III-V channel MOSFET},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100576793,
  author = {Hisashi Saito and Ryoung-A Maeng and Yasuyuki Miyamoto and Kazuhito Furuya},
  title = {Improvement of gate controllability of Hot Electron Transistor controlled by insulated gate},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100565410,
  author = {T. Kanazawa and H. Saito and K. Wakabayashi and Y. Miyamoto and K. Furuya},
  title = {Lateral Buried Growth of N+-InGaAs Source/Drain Region to Undercut InGaAs Channel Structure for High Drive Current N-type MOSFET},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100565409,
  author = {C. Y. Chang and H. T. Hsu and E. Y. Chang and C. I. Kuo and Y. Miyamoto},
  title = {InAs-Channel HEMTs for Ultra- Low-Power LNA Applications},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100576980,
  author = {Shinnosuke Takahashi and Hiroaki Yamashita and Takashi Kobayashi and Yuji Isogai and Hiroyuki Suzuki and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {InP/InGaAs SHBTs with 200nm wide emitter fabricated by EB lithography},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100576977,
  author = {Takafumi Uesawa and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {Monte Carlo Simulation of Plasmon Scattering in Base Layer of InP/InGaAs HBTs},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100576789,
  author = {H. Saito and Y. Miyamoto and K. FUruya},
  title = {Increment of voltage gain of InP/InGaAs Hot Electron Transistors controlled by insulated gate},
  booktitle = {Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International},
  year = 2008,
}

@inproceedings{CTT100563450,
  author = {So Nishimura and TUYOSHI ARAI and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {弾道電子放出顕微鏡を利用した電子波回折観測の可能性},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100565408,
  author = {Hisashi Saito and Takahiro Hino and Yasuyuki Miyamoto and Kazuhito Furuya},
  title = {Hot electron transistor controlled by insulated gate with 70nm-wide emitter},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100576962,
  author = {Chien-I  Kuo and Edward Yi  Chang and Chia-Yuan  Chang and Heng-Tung  Hsu and YASUYUKI MIYAMOTO},
  title = {Investigation of impact ionization from InXGa1-XAs to InAs channel HEMTs for high speed and low power applications},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100576792,
  author = {Hisashi Saito and Maeng Ryoung-A and Yasuyuki Miyamoto and Kazuhito Furuya},
  title = {Voltage gain increase of Hot Electron Transistor controlled by insulated gate},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100563452,
  author = {TOMOHIRO YAMADA and Takafumi Uesawa and KAZUHITO FURUYA and YASUYUKI MIYAMOTO},
  title = {ゲート制御ホットエレクトロントランジスタのバリスティックモデル解析},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100549527,
  author = {Shinnosuke Takahashi and Tsukasa Miura and Hiroaki Yamashita and Yasuyuki Miyamoto and Kazuhito Furuya},
  title = {DC Characteristics of Heterojunction Bipolar Transistor with Buried SiO2 Wires in Collector},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100563449,
  author = {TOMOHIRO YAMADA and KAZUHITO FURUYA and YASUYUKI MIYAMOTO},
  title = {先端ノンドープ構造ホットエレクトロンエミッタ充電時間解析},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100549526,
  author = {Hiroaki Yamashita and Tsukasa Miura and Shinnosuke Takahashi and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {Fabrication of 200-nm-thick SiO2 wires buried in InP for reduction in collector capacitance in InP/InGaAs DHBT},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100534008,
  author = {N. Kashio and K. Kurishima and Y. Fukai and S. Yamahata and Y. Miyamoto},
  title = {Emitter layer design for highly reliable and high-speed InP HBTs},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100534007,
  author = {T. Hino and A. Suwa and T. Hasegawa and H. Saito and M. Oono and Y. Miyamoto and K. Furuya},
  title = {Fabrication of hot electron transistors controlled by insulated gate},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100534010,
  author = {齋藤尚史 and 諏訪輝 and 長谷川貴史 and 日野高宏 and 大野真也 and 五十嵐満彦 and 宮本恭幸 and 古屋一仁},
  title = {絶縁ゲートにより制御するホットエレクトロントランジスタの走行層幅微細化},
  booktitle = {電気学会デバイス研究会},
  year = 2007,
}

@inproceedings{CTT100534012,
  author = {日野高宏 and 諏訪輝 and 齋藤尚史 and 宮本恭幸 and 古屋一仁},
  title = {絶縁ゲートホットエレクトロントランジスタのエミッタ微細化},
  booktitle = {応用物理学会},
  year = 2007,
}

@inproceedings{CTT100534011,
  author = {山下浩明 and 三浦司 and 高橋新之助 and 宮本恭幸 and 古屋一仁},
  title = {SiO2細線埋め込みHBTにおけるコレクタ容量削減のための200nm厚細線},
  booktitle = {応用物理学会},
  year = 2007,
}

@inproceedings{CTT100534013,
  author = {高橋新之助 and 三浦司 and 山下浩明 and 宮本恭幸 and 古屋一仁},
  title = {コレクタ層内にSiO2細線を埋め込んだHBTのDC特性},
  booktitle = {応用物理学会},
  year = 2007,
}

@inproceedings{CTT100534009,
  author = {諏訪輝  長谷川貴史  日野高宏  宮本恭幸  古屋　一仁},
  title = {絶縁ゲートにより制御するホットエレクトロントランジスタの作製},
  booktitle = {電子情報通信学会電子デバイス研究会},
  year = 2006,
}

@inproceedings{CTT100549524,
  author = {Chia-Yuan Chang and Edward Yi Chang and Yi-Chung Lien and Yasuyuki Miyamoto and Chien-I Kuo and Sze-Hung  Cheng and Li-Hsin  Chu},
  title = {High-PerformanceIn0.52Al0.48As/In0.6Ga0.4AsPower Metamorphic HEMT for Ka-Band Applications,},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100522210,
  author = {Y. Miyamoto and R. Nakagawa and I. Kashima and A. Suwa and N. Machida and K. Furuya},
  title = {25-nm-wide emitter for InP hot electron transistors without base layer},
  booktitle = {International Topical Workshop "Tera- and Nano-Devices:Physics and Modeling"},
  year = 2006,
}

@inproceedings{CTT100522404,
  author = {T. Kai and Y. Fukuyama and Y. Miyamoto and K. Furuya and K. Kurishima and S. Yamahata},
  title = {Electron Beam Lithography for Non Self-Aligned HBTs with Extremely Narrow Emitter Mesa},
  booktitle = {2006 International Microprocesses and Nanotechnology Conference},
  year = 2006,
}

@inproceedings{CTT100522402,
  author = {諏訪　輝 and 長谷川貴史 and 日野高宏 and 宮本恭幸 and 古屋一仁},
  title = {新ホットエレクトロントランジスタの室温動作にむけた新構造の提案},
  booktitle = {応用物理学会学術講演会},
  year = 2006,
}

@inproceedings{CTT100522401,
  author = {甲斐敬紹 and 福山義人 and 宮本恭幸 and 古屋一仁},
  title = {狭メサHBTの為のノンセルフアラインメント電子ビーム露光},
  booktitle = {応用物理学会学術講演会},
  year = 2006,
}

@inproceedings{CTT100522403,
  author = {五十嵐満彦 and 山田朋宏 and 町田信也 and 宮本恭幸 and 古屋一仁},
  title = {ゲート制御ホットエレクトロントランジスタの実験構造を考慮したモンテカルロ解析},
  booktitle = {応用物理学会学術講演会},
  year = 2006,
}

@inproceedings{CTT100522385,
  author = {宮本恭幸 and 石田昌司 and 山本徹 and 三浦司 and 古屋一仁},
  title = {MOVPEによるInP中のSiO2細線埋め込み成長とそのHBTコレクタ容量低減への応用},
  booktitle = {電子情報通信学会電子デバイス研究会},
  year = 2006,
}

@inproceedings{CTT100522209,
  author = {Y. Miyamoto and I. Kashima and A. Suwa and K. Furuya},
  title = {Increase in current density at 25-nm-wide emitter for InP hot-electron transistors without base layer},
  booktitle = {64th Annual Device Research Conference},
  year = 2006,
}

@inproceedings{CTT100522207,
  author = {N. Machida and Y. Miyamoto and K. Furuya},
  title = {Minimum emitter charging time for heterojunction bipolar transistors},
  booktitle = {The 18th Indium Phosphide and Related Materials Conference},
  year = 2006,
}

@inproceedings{CTT100522208,
  author = {Y. Miyamoto and M. Ishida and T. Yamamoto and T. Miura and K. Furuya},
  title = {InP Buried growth of SiO2 wires toward reduction of collector},
  booktitle = {13th International Conference on Metalorganic Vapor Phase Epitaxy},
  year = 2006,
}

@inproceedings{CTT100522388,
  author = {町田信也 and 五十嵐満彦 and 山田朋宏 and 宮本恭幸 and 古屋一仁},
  title = {ゲート制御ホットエレクトロントランジスタのモンテカルロ解析},
  booktitle = {応用物理学会学術講演会},
  year = 2006,
}

@inproceedings{CTT100522393,
  author = {鹿嶋一生 and 諏訪　輝 and 古屋一仁 and 宮本恭幸},
  title = {ゲートにより制御するホットエレクトロントランジスタにおける電流量の増大},
  booktitle = {応用物理学会学術講演会},
  year = 2006,
}

@inproceedings{CTT100522394,
  author = {町田信也 and 宮本恭幸 and 古屋一仁},
  title = {ヘテロ接合バイポーラトランジスタの最小エミッタ充電時間},
  booktitle = {応用物理学会学術講演会},
  year = 2006,
}

@inproceedings{CTT100522397,
  author = {石田昌司 and 山本　徹 and 三浦　司 and 宮本恭幸 and 古屋一仁},
  title = {SiO2細線埋め込み成長によるInP系HBTのコレクタ容量低減の提案},
  booktitle = {応用物理学会学術講演会},
  year = 2006,
}

@inproceedings{CTT100522383,
  author = {町田信也 and 五十嵐満彦 and 山田朋宏 and 宮本恭幸 and 古屋一仁},
  title = {ゲートにより制御するホットエレクトロントランジスタの高周波特性予測},
  booktitle = {電子情報通信学会電子デバイス研究会},
  year = 2006,
}

@inproceedings{CTT100522381,
  author = {鹿嶋一生 and 諏訪　輝 and 宮本恭幸 and 古屋一仁},
  title = {ゲートにより制御するホットエレクトロントランジスタにおける電流量の増大},
  booktitle = {電子情報通信学会電子デバイス研究会},
  year = 2006,
}

@inproceedings{CTT100522206,
  author = {K. Furuya and N. Machida and R. Nakagawa and I. Kashima and M. Ishida and Y. Miyamoto},
  title = {MC simulation and fabrication of ultrafast transistor using ballistic electron in intrinsic semiconductor},
  booktitle = {Second Joint International Conference on New Phenomena in Mesoscopic Systems and Surfaces and Interfaces of Mesoscopic Devices},
  year = 2005,
}

@inproceedings{CTT100391821,
  author = { 鹿嶋一生 and 古屋一仁 and 宮本恭幸 and 中川　亮},
  title = {InP系ホットエレクトロントランジスタにおけるエミッタ接地の飽和特性とゲートリーク電流の低減},
  booktitle = {応用物理学会},
  year = 2005,
}

@inproceedings{CTT100540514,
  author = {Y. Miyamoto and R. Nakagawa and I. Kashima and M. Ishida and K. Furuya},
  title = {Low leakage gate current of InP transistors with hot electron extracted by attractive potential around i-InP/metal gate},
  booktitle = {International Conference on Solid State Devices and Materials},
  year = 2005,
}

@inproceedings{CTT100391823,
  author = {Y. Miyamoto and R. Nakagawa and I. Kashima and K. Takeuchi and Y. Yamada and T. Fujisaki and M. Ishida and KAZUHITO FURUYA},
  title = {25 nm Wide Emitter and Precise Alignment between Gate and Emitter in InP Hot Electron Transistors},
  booktitle = {Topical Workshop on Heterostructure Microelectronics},
  year = 2005,
}

@inproceedings{CTT100391817,
  author = {Y.Miyamoto and R. Nakagawa and K. Takeuchi and Y. Yamada and T. Fujisaki and M. Ishida and K. Furuya},
  title = {InP ballistic hot electron transistors with 25 nm wide emitter},
  booktitle = {24th Electronic Materials Symposium},
  year = 2005,
}

@inproceedings{CTT100391851,
  author = {Y. Miyamoto and M. Ishida and T. Nonaka and T. Yamamoto and K. Furuya},
  title = {Tungsten Buried Growth by Using Thin Flow-Liner for Small Collector Capacitance in InP HBT},
  booktitle = {International Conference on Indium Phosphide and Related},
  year = 2005,
}

@inproceedings{CTT100391852,
  author = {Y. Miyamoto and Y. Watanabe and W. Qiu and K. Furaya},
  title = {Analysis of lateral current spreading in collector of submicron HBT},
  booktitle = {International Conference on Indium Phosphide and Related},
  year = 2005,
}

@inproceedings{CTT100391820,
  author = {Y. Miyamoto and M. Ishida and T. Nonaka and T. Yamamoto and K. Furuya},
  title = {Tungsten buried growth by using thin flow-liner for small collector capacitance in InP HBT},
  booktitle = {応用物理学会},
  year = 2005,
}

@inproceedings{CTT100391819,
  author = {Y. Watanabe and Wei-bin Qiu and Y. MIYAMOTO and K. FURUYA},
  title = {Analysis of lateral current spreading in collector of submicron HBT},
  booktitle = {応用物理学会},
  year = 2005,
}

@inproceedings{CTT100391818,
  author = {Yasuyuki Miyamoto and Yasuhiro Watanabe},
  title = {Deep submicron InP HBT},
  booktitle = {電気学会},
  year = 2005,
}

@inproceedings{CTT100667668,
  author = {T.Hattori and H.Hongo and Y.Miyamoto and KAZUHITO FURUYA and 松沼 健司 and M.Watanabe and M.Asada},
  title = {Seventy nm pitch CaF<sub>2</sub> inorganic resist pattern by electron beam exposure},
  booktitle = {},
  year = 1996,
}

@misc{CTT100619795,
  author = {YASUYUKI MIYAMOTO},
  title = {極微細ヘテロ接合トランジスタ},
  year = 2010,
}

@misc{CTT100595413,
  author = {YASUYUKI MIYAMOTO},
  title = {GaInAsP/InP Organo-Metallic Vapor Phase Epitaxy (OMVPE) for Quantum Box Lasers},
  year = 1988,
}

@misc{CTT100710319,
  author = {YASUYUKI MIYAMOTO and Ryota Yamanaka and Toru Kanazawa},
  title = {半導体装置の製造方法
},
  howpublished = {PublishedPatent},
  year = 2016,
  month  = {},
  note   = {特願2014-174229(2014/08/28), 特開2016-051722(2016/04/11)}
}


@misc{CTT100677655,
  author = {YASUYUKI MIYAMOTO and Masashi Kashiwano and Toru Kanazawa},
  title = {電界効果トランジスタ},
  howpublished = {PublishedPatent},
  year = 2014,
  month  = {},
  note   = {特願2013-001907(2013/01/09), 特開2014-135359(2014/07/24)}
}


@misc{CTT100665190,
  author = {YASUYUKI MIYAMOTO},
  title = {光電気化学装置および半導体装置の製造方法},
  howpublished = {PublishedPatent},
  year = 2013,
  month  = {},
  note   = {特願2012-011185(2012/01/23), 特開2013-149914(2013/08/01)}
}


@misc{CTT100657647,
  author = {YASUYUKI MIYAMOTO and Toru Kanazawa},
  title = {電界効果トランジスタ},
  howpublished = {PublishedPatent},
  year = 2013,
  month  = {},
  note   = {特願2011-165385(2011/07/28), 特開2013-030604(2013/02/07)}
}


@misc{CTT100639691,
  author = {YASUYUKI MIYAMOTO},
  title = {電界効果トランジスタ},
  howpublished = {PublishedPatent},
  year = 2012,
  month  = {},
  note   = {特願2010-204769(2010/09/13), 特開2012-060082(2012/03/22)}
}


@misc{CTT100634083,
  author = {YASUYUKI MIYAMOTO},
  title = {半導体装置の製造方法},
  howpublished = {PublishedPatent},
  year = 2011,
  month  = {},
  note   = {特願2010-100797(2010/04/26), 特開2011-233617(2011/11/17)}
}




@phdthesis{CTT100595413,
  author = {YASUYUKI MIYAMOTO},
  title = {GaInAsP/InP Organo-Metallic Vapor Phase Epitaxy (OMVPE) for Quantum Box Lasers},
  school = {},
  year = 1988,
}