@article{CTT100887487,
  author = {Y. Ito and S. Tamai and T. Hoshi and T. Gotow and Y. Miyamoto},
  title = {Dependence of Process Damage on GaN Channel Thickness in AlGaN/GaN High-electron-mobility Transistors with Back-barrier Layers},
  journal = {JPN. J. APPL. PHYS.},
  year = 2023,
}

@article{CTT100842577,
  author = {Manabu Mitsuhara and Takahiro Gotow and Takuya Hoshi and Hiroki Sugiyama and Mitsuru Takenaka and Shinichi Takagi},
  title = {Comparative studies of structural and photoluminescence properties between tensile-strained In0.39Ga0.61As and GaAs0.64Sb0.36 layers grown on InP(001) substrates},
  journal = {Journal of Crystal Growth},
  year = 2020,
}

@inproceedings{CTT100887483,
  author = {Y. Ito and S. Tamai and T. Hoshi and Y. Miyamoto},
  title = {GaN channel thickness dependence in AlGaN / GaN HEMT structures with back barriers},
  booktitle = {},
  year = 2022,
}