@article{CTT100800892,
  author = {W Zhang and S. Netsu and T. Kanazawa and T. Amemiya and Y. Miyamoto},
  title = {Effect of increasing gate capacitance on the performance of a p-MoS2/HfS2 van der Waals heterostructure tunneling field-effect transistor},
  journal = {Jpn. J. Appl. Phys},
  year = 2019,
}

@article{CTT100766771,
  author = {Seiko Netsu and Toru Kanazawa and Teerayut Uwanno and Tomohiro Amemiya and Kosuke Nagashio and Yasuyuki Miyamoto},
  title = {Type-II HfS2/MoS2 Heterojunction Transistors},
  journal = {IEICE Transactions on Electronics},
  year = 2018,
}

@article{CTT100800891,
  author = {S. Netsu and M. Hellenbrand and C. B. Zota and Y. Miyamoto and E. Lind},
  title = {A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs},
  journal = {IEEE Journal of the Electron Devices Society},
  year = 2018,
}

@article{CTT100738837,
  author = {K. Ohsawa and S. Netsu and N. Kise and S. Noguchi and Y. Miyamoto},
  title = {Dependence of electron mobility on gate voltage sweeping width and deposition temperature in MOSFETs with HfO2/Al2O3/InGaAs gate stacks},
  journal = {Jpn. J. Appl. Phys.},
  year = 2017,
}

@inproceedings{CTT100800925,
  author = {W. Zhang and S. Netsu and T.Kanazawa and T. Amemiya and Y. Miyamoto},
  title = {p-MoS2/HfS2 van der Waals Heterostructure Transistor Using Ni Backgate Buried in HfO2 Dielectric},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800854,
  author = {Wenlun Zhang and Netsu Seikou and Toru Kanazawa and Tomohiro Amemiya and YASUYUKI MIYAMOTO},
  title = {埋め込みNiバックゲートを用いたp-MoS2/HfS2トンネルFET},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800886,
  author = {Shinjiro Iwata and Kazumi Ohashi and Netsu Seikou and Koichi Fukuda and YASUYUKI MIYAMOTO},
  title = {GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける界面準位の導入による性能の劣化},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100747612,
  author = {Netsu Seikou and Toru Kanazawa and Tomohiro Amemiya and YASUYUKI MIYAMOTO},
  title = {HfS2/MoS2 ヘテロジャンクションの温度依存電流特性},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100747601,
  author = {Seiko Netsu and Toru Kanazawa and Vikrant Upadhyaya and Teerayut Uwanno and Tomohiro Amemiya and Kosuke Nagashio and Yasuyuki Miyamoto},
  title = {Type II HfS2/MoS2 heterojunction Tunnel FET},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100740854,
  author = {Kazuto Ohsawa and Shinji Noguchi and Netsu Seikou and Nobukazu Kise and YASUYUKI MIYAMOTO},
  title = {[16p-413-11] HfO2/Al2O3/InGaAsゲート構造をもつMOSFETの移動度のH2アニール後における成膜温度およびAl2O3膜厚依存性},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100735914,
  author = {Netsu Seikou and Toru Kanazawa and Vikrant Upadhyaya and ウワンノー ティーラユット and Tomohiro Amemiya and 長汐 晃輔 and YASUYUKI MIYAMOTO},
  title = {Type II 型 HfS2/MoS2ヘテロジャンクションを有するTFET},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100735618,
  author = {Toru Kanazawa and Tomohiro Amemiya and Netsu Seikou and Vikrant Upadhyaya and Koichi Fukuda and YASUYUKI MIYAMOTO},
  title = {HfS2系トンネルトランジスタのデバイスシミュレーション},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100740944,
  author = {Kazuto Ohsawa and Shinji Noguchi and Netsu Seikou and Nobukazu Kise and YASUYUKI MIYAMOTO},
  title = {HfO2/Al2O3/InGaAsゲート構造における移動度への成膜温度およびH2アニールの影響},
  booktitle = {信学技報},
  year = 2017,
}

@inproceedings{CTT100725184,
  author = {Haruki Kinoshita and Nobukazu Kise and Netsu Seikou and Toru Kanazawa and YASUYUKI MIYAMOTO},
  title = {再成長S/Dを有するInGaAsマルチゲートMOSFETのLch=16nm動作},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100740895,
  author = {Haruki Kinoshita and Nobukazu Kise and Netsu Seikou and Toru Kanazawa and YASUYUKI MIYAMOTO},
  title = {[22p-W541-5] 再成長S/Dを有するInGaAsマルチゲートMOSFETのLch=16nm動作},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100800887,
  author = {Haruki Kinoshita and Toru Kanazawa and Netsu Seikou and Yuichi Mishima and YASUYUKI MIYAMOTO},
  title = {再成長ソース/ドレインを有するInGaAsマルチゲートMOSFET作製プロセス},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100721910,
  author = {H.Kinoshita and S.Netsu and Y.mishima and T.Kanazawa and Y.Miyamoto},
  title = {Fabrication of InGaAs channel multi-gate MOSFETs with MOVPE regrown source/drain},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100716504,
  author = {S. Netsu and T. Kanazawa and Y. Miyamoto},
  title = {Improvement of Interface Property of HfO2/Al2O3/In0.53Ga0.47As Using Nitrogen Plasma Cleaning and Hydrogen Annealing},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693238,
  author = {Haruki Kinoshita and Toru Kanazawa and Netsu Seikou and Yuichi Mishima and YASUYUKI MIYAMOTO},
  title = {再成長ソース/ドレインを有するInGaAsマルチゲートMOSFET作製プロセスに関する研究},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693239,
  author = {Netsu Seikou and Toru Kanazawa and YASUYUKI MIYAMOTO},
  title = {HfO2/Al2O3/In0.53Ga0.47As界 面に対する窒素プラズマクリーニング後の水素アニール効果に関する研究},
  booktitle = {},
  year = 2015,
}