@article{CTT100916300, author = {Wenbo Lin and Shinjiro Iwata and Koichi Fukuda and Yasuyuki Miyamoto}, title = {Scaling limit for InGaAs/GaAsSb heterojunction double-gate tunnel FETs from the viewpoint of direct band-to-band tunneling from source to drain induced off-characteristics deterioration}, journal = {Japanese Journal of Applied Physics}, year = 2016, } @article{CTT100738795, author = {Shinjiro Iwata and Kazumi Ohashi and Wenbo Lin and Koichi Fukuda and YASUYUKI MIYAMOTO}, title = {GaAsSb/InGaAsダブルゲートンネルFET におけるソースおよびドレイン不純物濃度依存性}, journal = {電気学会論文誌C}, year = 2016, } @article{CTT100693011, author = {K. Ohashi and M. Fujimatsu and S. Iwata and Y. Miyamoto}, title = {Body width dependence of subthreshold slope and on-current in GaAsSb/InGaAs double-gate vertical tunnel FETs}, journal = {Jpn. J. Appl.Phys.}, year = 2015, } @inproceedings{CTT100800886, author = {Shinjiro Iwata and Kazumi Ohashi and Netsu Seikou and Koichi Fukuda and YASUYUKI MIYAMOTO}, title = {GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける界面準位の導入による性能の劣化}, booktitle = {}, year = 2018, } @inproceedings{CTT100752196, author = {Nobukazu Kise and Shinjiro Iwata and Ryousuke Aonuma and YASUYUKI MIYAMOTO}, title = {[8a-S22-1] 68mV/decのSSをもつGaAsSb/InGaAsダブルゲートトンネルFET}, booktitle = {}, year = 2017, } @inproceedings{CTT100752746, author = {N. Kise and S. Iwata and R. Aonuma and K. Ohsawa and Y. Miyamoto}, title = {GaAsSb/InGaAs Double-Gate Vertical Tunnel FET with a Subthreshold Swing of 68mV/dec at Room Temperature}, booktitle = {}, year = 2017, } @inproceedings{CTT100738888, author = {Ryousuke Aonuma and Shinjiro Iwata and Nobukazu Kise and YASUYUKI MIYAMOTO}, title = {68mV/decのSSを持つGaAsSb/InGaAs縦型ダブルゲートトンネルFET}, booktitle = {}, year = 2017, } @inproceedings{CTT100740070, author = {Shinjiro Iwata and Nobukazu Kise and Ryousuke Aonuma and YASUYUKI MIYAMOTO}, title = {[16p-412-5] GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける不純物濃度調整によるオン電流の向上}, booktitle = {}, year = 2017, } @inproceedings{CTT100740962, author = {Y. Miyamoto and W. Lin and S.Iwata and K. Fukuda}, title = {Steep sub-threshold slope in short-channel InGaAs TFET (Invited)}, booktitle = {}, year = 2016, } @inproceedings{CTT100740893, author = {Wenbo Lin and Shinjiro Iwata and Koichi Fukuda and YASUYUKI MIYAMOTO}, title = {Contribution to Off-Current of Source-Drain Direct Tunneling in Short-Channel TFET}, booktitle = {}, year = 2016, } @inproceedings{CTT100717934, author = {S. Iwata and W. Lin and K. Fukuda and Y. Miyamoto}, title = {Design of drain for low off current in GaAsSb/InGaAs tunnel FETs}, booktitle = {}, year = 2015, } @inproceedings{CTT100721929, author = {Y. Miyamoto and M. Fujimatsu and K. Ohashi and A. Yukimachi and S. Iwata}, title = {Steep subthreshold slope in InGaAs MOSFET}, booktitle = {}, year = 2015, } @inproceedings{CTT100721938, author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and K. Ohsawa and Y. Mishima and M. Fujimatsu and K. Ohashi and S. Nestu and S. Iwata}, title = {InGaAs channel for low supply voltage}, booktitle = {}, year = 2015, } @inproceedings{CTT100693235, author = {Shinjiro Iwata and Kazumi Ohashi and YASUYUKI MIYAMOTO}, title = {GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおけるI-V特性の不純物濃度依存性}, booktitle = {}, year = 2015, }