@article{CTT100611953,
  author = {Toru Kanazawa and kazuya wakabayashi and Hisashi Saito and Ryousuke Terao and Shunsuke Ikeda and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {Submicron InP/InGaAs Composite-Channel Metal–Oxide–Semiconductor Field-Effect Transistor with Selectively Regrown n+-Source},
  journal = {Applied Physics Express},
  year = 2010,
}

@inproceedings{CTT100610518,
  author = {T. Kanazawa and K. Wakabayashi and H. Saito and R. Terao and T. Tajima and S. Ikeda and Y. Miyamoto and K. Furuya},
  title = {Submicron InP/InGaAs composite channel MOSFETs with selectively regrown n+-source/drain buried in channel undercut},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610493,
  author = {若林和也 and 金澤 徹 and 齋藤尚史 and 寺尾良輔 and 池田俊介 and 宮本恭幸 and 古屋一仁},
  title = {再成長ソースを有するサブミクロンInP/InGaAs nMOSFETの電流電圧特性},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610505,
  author = {金澤 徹 and 若林和也 and 齋藤尚史 and 寺尾良輔 and 田島智宣 and 池田俊介 and 宮本恭幸 and 古屋一仁},
  title = {III-V族サブミクロンチャネルを有する高移動度MOSFET},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610494,
  author = {寺尾良輔 and 金澤 徹 and 齋藤尚史 and 若林和也 and 池田俊介 and 宮本恭幸 and 古屋一仁},
  title = {Al2O3ゲート絶縁膜を用いたInP/InGaAsチャネル n-MOSFETの電気特},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100597640,
  author = {金澤徹 and 若林和也 and 齋藤尚史 and 寺尾良輔 and 田島智宣 and 池田俊介 and 宮本恭幸 and 古屋一仁},
  title = {Al2O3ゲート絶縁膜を用いたInP/InGaAsコンポジットチャネルMOSFET},
  booktitle = {電子情報通信学会技術研究報告 電子デバイス},
  year = 2010,
}

@inproceedings{CTT100610500,
  author = {K. Wakabayashi and T. Kanazawa and H. Saito and R. Terao and S. Ikeda and Y. Miyamoto and K. Furuya},
  title = {InP/In0.53Ga0.47As composite channel n-MOSFETwith heavily dopedregrown source/drain structure},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100591555,
  author = {Toru Kanazawa and Hisashi Saito and Kazuya Wakabayashi and Ryousuke Terao and Tomonori Tajima and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {Fabrication of InP/InGaAs Undoped Channel MOSFET with Selectively Regrown N<sup>+</sup>-InGaAs Source Region},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100591554,
  author = {若林 和也 and 金澤 徹 and 齋藤 尚史 and 田島 智宣 and 寺尾 良輔 and 宮本 恭幸 and 古屋 一仁},
  title = {再成長ソースを有するアンドープチャネルInP/InGaAs MOSFETの電流特性},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100591551,
  author = {金澤徹 and 齋藤尚史 and 若林和也 and 田島智宣 and 宮本恭幸 and 古屋一仁},
  title = {MOVPE再成長n<sup>+</sup>ソースを有するⅢ-Ⅴ族高移動度チャネルMOSFET},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100610491,
  author = {若林和也 and 金澤 徹 and 齋藤尚史 and 田島智宣 and 寺尾良輔 and 宮本恭幸 and 古屋一仁},
  title = {「再成長ソースを有するアンドープチャネルInP/InGaAs MOSFETの電流特性},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100583670,
  author = {Toru Kanazawa and KAZUHITO FURUYA and YASUYUKI MIYAMOTO and Hisashi Saito and kazuya wakabayashi and Tomonori Tajima},
  title = {InP/InGaAs-channel MOSFET with MOVPE Selective Regrown Source},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100583674,
  author = {金澤徹 and 古屋一仁 and 宮本恭幸 and 齋藤尚史 and 若林和也 and 田島智宣},
  title = {MOVPE再成長ソースを有するIII-V族MOSFETの電流特性},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100565410,
  author = {T. Kanazawa and H. Saito and K. Wakabayashi and Y. Miyamoto and K. Furuya},
  title = {Lateral Buried Growth of N+-InGaAs Source/Drain Region to Undercut InGaAs Channel Structure for High Drive Current N-type MOSFET},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100583676,
  author = {金澤徹 and 古屋一仁 and 宮本恭幸 and 齋藤尚史 and 若林和也 and 田島智宣},
  title = {Ⅲ-Ⅴ族高駆動能力MOSFETへ向けたn<sup>+</sup>-InGaAsソース/ドレイン層の横方向埋め込み成長},
  booktitle = {},
  year = 2008,
}