@article{CTT100808935,
  author = {Y. Kuroiwa and Y. Matsushita and K. Harada and F. Oba},
  title = {Theoretical prediction of strain-induced carrier effective mass modulation in 4H-SiC and GaN},
  journal = {Applied Physics Letters},
  year = 2019,
}

@article{CTT100808943,
  author = {Y. Wang and T. Ohsawa and Y. Kumagai and K. Harada and F. Oba and N. Ohashi},
  title = {Achieving non-degenerate Zn3N2 thin films by near room temperature sputtering deposition},
  journal = {Applied Physics Letters},
  year = 2019,
}

@article{CTT100808936,
  author = {T. Kobayashi and K. Harada and Y. Kumagai and F. Oba and Y. Matsushita},
  title = {Native point defects and carbon clusters in 4H-SiC: A hybrid functional study},
  journal = {Journal of Applied Physics},
  year = 2019,
}

@article{CTT100771318,
  author = {Kosuke Matsuzaki and Kou Harada and Yu Kumagai and Shogo Koshiya and Shigenori Ueda and Masato Sasase and Akihiro Maeda and Tomofumi Susaki and Masaaki Kitano and Fumiyasu Oba and Hideo Hosono},
  title = {High-Mobility p-Type and n-Type Copper Nitride Semiconductors by Direct Nitriding Synthesis and In Silico Doping Design},
  journal = {Adv. Mater.},
  year = 2018,
}

@article{CTT100751916,
  author = {Yu Kumagai and Kou Harada and Hirofumi Akamatsu and Kosuke Matsuzaki and Fumiyasu Oba},
  title = {Carrier-induced band-gap variation and point defects in Zn3N2 from first principles},
  journal = {Physical Review Applied},
  year = 2017,
}

@inproceedings{CTT100907568,
  author = {松崎功佑 and 片瀬貴義 and 熊谷悠 and 角田直樹 and 原田航 and 大場史康 and 細野秀雄},
  title = {Pd0価ドーピングによる窒化銅半導体のバンド構造制御と熱電特性},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100820967,
  author = {早川 周作 and 原田 航 and 望月 泰英 and 高橋 亮 and 熊谷 悠 and 大場 史康},
  title = {窒化イットリウムの点欠陥に関する第一原理計算},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100821957,
  author = {Yuichiro Kuroiwa and Yu-ichiro Matsushita and Kou Harada and Fumiyasu Oba},
  title = {Strain-induced carrier effective mass modulation in 4H-SiC and GaN: A first-principles study},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100752958,
  author = {N. Nishiya and K. Harada and Y. Kumagai and H. Akamatsu and F. Oba},
  title = {Theoretical study of doping limits in semiconductors},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100752942,
  author = {西谷宣彦 and 原田航 and 熊谷悠 and 赤松寛文 and 大場史康},
  title = {化合物半導体における点欠陥形成とドーピング限界の理論的検討},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100741476,
  author = {西谷 宣彦 and 原田 航 and 熊谷 悠 and 赤松寛文 and 大場 史康},
  title = {半導体におけるドーピング限界の理論的研究},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100751918,
  author = {原田 航 and 熊谷 悠 and 松崎 功佑 and 須崎（須﨑） 友文 and 大場 史康},
  title = {第一原理計算による窒化銅中の固有点欠陥及び不純物点欠陥の解析},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100734343,
  author = {西谷宣彦 and 原田航 and 熊谷悠 and 赤松寛文 and 大場史康},
  title = {第一原理計算による化合物半導体のドーピング限界の検討},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100734342,
  author = {原田航 and 熊谷悠 and 西谷宣彦 and 松崎功佑 and 須崎友文 and 大場史康},
  title = {窒化銅中の点欠陥の第一原理計算},
  booktitle = {},
  year = 2016,
}

@misc{CTT100785215,
  author = {松崎功佑 and 細野秀雄 and 大場史康 and 熊谷悠 and 原田航 and 雲見日出也},
  title = {窒化銅半導体およびその製造方法},
  howpublished = {登録特許},
  year = 2021,
  month  = {},
  note   = {特願2017-041774(2017/03/06), 特開2018-148031(2018/09/20), 特許第6951734号(2021/09/29)}
}