@article{CTT100735623, author = {Toru Kanazawa and Tomohiro Amemiya and Vikrant Upadhyaya and Atsushi Ishikawa and Kenji Tsuruta and Takuo Tanaka and Yasuyuki Miyamoto}, title = {Performance Improvement of HfS2 Transistors by Atomic Layer Deposition of HfO2}, journal = {IEEE Transactions on Nanotechnology}, year = 2017, } @article{CTT100741627, author = {Vikrant UPADHYAYA and Toru KANAZAWA and Yasuyuki MIYAMOTO}, title = {Vacuum Annealing and Passivation of HfS2 FET for Mitigation of Atmospheric Degradation}, journal = {IEICE Transactions on Electronics}, year = 2017, } @article{CTT100709138, author = {Toru Kanazawa and Tomohiro Amemiya and Atsushi Ishikawa and Vikrant Upadhyaya and Kenji Tsuruta and Takuo Tanaka and Yasuyuki Miyamoto}, title = {Few Layer HfS2 FET}, journal = {Scientific Reports}, year = 2016, } @inproceedings{CTT100747601, author = {Seiko Netsu and Toru Kanazawa and Vikrant Upadhyaya and Teerayut Uwanno and Tomohiro Amemiya and Kosuke Nagashio and Yasuyuki Miyamoto}, title = {Type II HfS2/MoS2 heterojunction Tunnel FET}, booktitle = {}, year = 2017, } @inproceedings{CTT100735618, author = {金澤 徹 and 雨宮 智宏 and 祢津 誠晃 and Vikrant Upadhyaya and 福田 浩一 and 宮本 恭幸}, title = {HfS2系トンネルトランジスタのデバイスシミュレーション}, booktitle = {}, year = 2017, } @inproceedings{CTT100735914, author = {祢津 誠晃 and 金澤 徹 and Vikrant Upadhyaya and ウワンノー ティーラユット and 雨宮 智宏 and 長汐 晃輔 and 宮本 恭幸}, title = {Type II 型 HfS2/MoS2ヘテロジャンクションを有するTFET}, booktitle = {}, year = 2017, } @inproceedings{CTT100722102, author = {金澤 徹 and Vikrant Upadhyaya and 雨宮 智宏 and 石川 篤 and 鶴田 健二 and 田中 拓男 and 宮本 恭幸}, title = {HfO2パッシベーションによるHfS2 FETの特性改善}, booktitle = {}, year = 2016, } @inproceedings{CTT100722083, author = {Toru Kanazawa and Tomohiro Amemiya and Vikrant Upadhyaya and Atsushi Ishikawa and Kenji Tsuruta and Takuo Tanaka and Yasuyuki Miyamoto}, title = {Effect of the HfO2 passivation on HfS2 Transistors}, booktitle = {}, year = 2016, } @inproceedings{CTT100725110, author = {Vikrant Upadhyaya and Toru Kanazawa and YASUYUKI MIYAMOTO}, title = {Vacuum annealing and passivation of Hf2 FET for mitigation of atmospheric degradation}, booktitle = {}, year = 2016, } @inproceedings{CTT100725183, author = {Vikrant Upadhyaya and Toru Kanazawa and Yasuyuki Miyamoto}, title = {Evaluation of electrical properties of HfS2 thin flakes obtained by mechanical exfoliation}, booktitle = {信学技報}, year = 2016, } @inproceedings{CTT100725116, author = {Upadhyaya Vikrant and kanazawa Toru and Miyamoto Yasuyuki}, title = {Measures for mitigating environmental degradation of Two Dimensional Hafnium Disulfide Field Effect Transistor}, booktitle = {}, year = 2016, } @inproceedings{CTT100709147, author = {Toru Kanazawa and Tomohiro Amemiya and Atsushi Ishikawa and Vikrant Upadhyaya and Takuo Tanaka and Kenji Tsuruta and Yasuyuki Miyamoto}, title = {HfS2 Electric Double Layer Transistor with High Drain Current}, booktitle = {}, year = 2015, } @inproceedings{CTT100693222, author = {T. Kanazawa and T. Amemiya and A. Ishikawa and V. Upadhyaya and K. Tsuruta and T. Tanaka and Y. Miyamoto}, title = {Fabrication of Thin-Film HfS2 FET}, booktitle = {}, year = 2015, }