@article{CTT100800916,
  author = {K. Hotta and Y. Tomizuka and K. Itagaki and I. Makabe and S. Yoshida and Y. Miyamoto},
  title = {Annealing temperature dependence of alloy contact for N-polar GaN HEMT structure},
  journal = {Jpn. J. Appl. Phys},
  year = 2019,
}

@inproceedings{CTT100822692,
  author = {早坂 明泰 and 青沼 遼介 and 堀田 航史 and 金井 七重 and 眞壁 勇夫 and 吉田 成輝 and 宮本 恭幸},
  title = {N極性GaN HEMT作製プロセスにおけるプラズマダメージの低減},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100800936,
  author = {A. Hayasaka and R. Aonuma and K. Hotta and I. Makabe and S. Yoshida and Y. Miyamoto},
  title = {N-polar GaN HEMT with Al2O3 gate insulator},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100800846,
  author = {早坂 明泰 and 青沼 遼介 and 堀田 航史 and 眞壁 勇夫 and 吉田 成輝 and 宮本 恭幸},
  title = {Al2O3ゲート絶縁膜を持つN極性GaN HEMT},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100800930,
  author = {K. Hotta and Y. Tomizuka and K. Itagaki and I. Makabe and S. Yoshida and Y. Miyamoto},
  title = {Annealing temperature dependence of alloy contact for N-polar GaN HEMT structure},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800852,
  author = {堀田 航史 and 富塚 ゆみ子 and 板垣 光祐 and 眞壁 勇夫 and 吉田 成輝 and 宮本 恭幸},
  title = {N極性GaN HEMT構造のコンタクト抵抗の熱処理温度依存性},
  booktitle = {},
  year = 2018,
}