@inproceedings{CTT100566229,
  author = {H.Moriya and S.Hino and N.Miura and T.Oomori and E.Tokumitsu},
  title = {Effect of Oxidant in MOCVD-growth of Al2O3 Gate Insurator on 4H-SiC MOSFET Properties},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100544415,
  author = {日野史郎 and 畑山 智裕 and 加藤潤 and 守谷仁 and 三浦 成久 and 大森 達夫 and 徳光永輔},
  title = {極薄膜酸化膜を用いたAl2O3/SiC MOSFETのチャネル移動度の向上（Ⅱ）},
  booktitle = {第６８回 応用物理学会学術講演会},
  year = 2007,
}

@inproceedings{CTT100830714,
  author = {H. Sauddin and Y. Sasaki and H. Ito and B. Mizuno and P. Ahmet and K. Kakushima and N. Sugii and K. Tsutsui and H. Iwai},
  title = {Leakage Current Characteristics of Ultra-Shallow Junctions formed by B2H6 Plasma Doping},
  booktitle = {},
  year = 2006,
}