@article{CTT100911397,
  author = {Reika Ota and Shinnosuke Yasuoka and Ryoichi Mizutani and Takahisa Shiraishi and Kazuki Okamoto and Kuniyuki Kakushima and Tomoyuki Koganezawa and Osami Sakata and Hiroshi Funakubo},
  title = {Scalable ferroelectricity of 20-nm-thick (Al0.8Sc0.2)N thin films sandwiched between TiN electrodes},
  journal = {J. Appl. Phys.},
  year = 2023,
}

@article{CTT100911395,
  author = {Shinnosuke Yasuoka and Ryoichi Mizutani and Reika Ota and Takahisa Shiraishi and Takao Shimizu and Kazuki Okamoto and Masato Uehara and Hiroshi Yamada and Morito Akiyama and Hiroshi Funakubo},
  title = {Invariant polarization switching kinetics in an (Al0.2Sc0.8)N film with frequency and temperature},
  journal = {Appl. Phys. Lett.},
  year = 2023,
}

@article{CTT100890868,
  author = {Shinnosuke Yasuoka and Ryoichi Mizutani and Reika Ota and Takahisa Shiraishi and Takao Shimizu and Masato Uehara and Hiroshi Yamada and Morito Akiyama and Hiroshi Funakubo},
  title = {Tunable Ferroelectric Properties in Wurtzite (Al0.8Sc0.2)N via Crystal Anisotropy},
  journal = {ACS Appl. Electron. Mater.},
  year = 2022,
}

@article{CTT100890774,
  author = {Masato Uehara and Ryoichi Mizutani and Shinnosuke Yasuoka and Takao Shimizu and Hiroshi Yamada and Morito Akiyama and Hiroshi Funakubo},
  title = {Lower ferroelectric coercive field of ScGaN with equivalent remanent polarization as ScAlN},
  journal = {Appl. Phys. Exp.},
  year = 2022,
}

@article{CTT100889889,
  author = {Shinnosuke YASUOKA and Ryoichi MIZUTANI and Reika OTA and Takahisa SHIRAISHI and Takao SHIMIZU and Shintaro YASUI and Yoshitaka EHARA and Ken NISHIDA and Masato UEHARA and Hiroshi YAMADA and Morito AKIYAMA and Yasuhiko IMAI and Osami SAKATA and Hiroshi FUNAKUBO},
  title = {Enhancement of crystal anisotropy and ferroelectricity by decreasing thickness in (Al,Sc)N films},
  journal = {J. Ceram. Soc. Jpn.},
  year = 2022,
}

@article{CTT100864854,
  author = {Masato Uehara and Ryoichi Mizutani and Shinnosuke Yasuoka and Takahisa Shiraishi and Takao Shimizu and Hiroshi Yamada and Morito Akiyama and Hiroshi Funakubo},
  title = {Demonstration of ferroelectricity in GaN-based thin film},
  journal = {Appl. Phys. Lett.},
  year = 2021,
}

@article{CTT100864727,
  author = {Shinnosuke Yasuoka and Takao Shimizu and Masato Uehara and Hiroshi Yamada and Morito Akiyama and Hiroshi Funakubo},
  title = {Impact of deposition temperature on crystal structure and ferroelectric properties of (Al1-xScx)N films prepared by sputtering method},
  journal = {Phys. Status Solidi A 2021},
  year = 2021,
}

@article{CTT100864826,
  author = {Ryoichi Mizutani and Shinnosuke Yasuoka and Takahisa Shiraishi and Takao Shimizu and Masato Uehara and Hiroshi Yamada and Morito Akiyama and Osami Sakata and Hiroshi Funakubo},
  title = {Thickness scaling of (Al0.8Sc0.2)N films with remanent polarization beyond 100 μC/cm2 around 10 nm in thickness},
  journal = {Appl. Phys. Exp.},
  year = 2021,
}

@article{CTT100849031,
  author = {Shinnosuke Yasuoka and Takao Shimizu and Masato Uehara and Hiroshi Yamada and Morito Akiyama and Yoshiomi Hiranaga and Yasuo Cho and Hiroshi Funakubo},
  title = {Effects of deposition conditions on the ferroelectric properties of (Al1-xScx)N thin films},
  journal = {J. Appl. Phys.},
  year = 2020,
}

@inproceedings{CTT100920067,
  author = {上原雅人 and 平田研二 and 中村美子 and 安岡慎之介 and スリ アユ アンガライニ and 岡本一輝 and 山田浩志 and 舟窪浩 and 秋山守人},
  title = {スパッタリング法で作製した高Sc濃度ScGaN膜の圧電・強誘電特性},
  booktitle = {},
  year = 2024,
}

@inproceedings{CTT100920066,
  author = {大田怜佳 and 安岡慎之介 and 中村美子 and 岡本一輝 and 原浩之 and 正能大起 and 上岡義弘 and 召田雅実 and 舟窪浩},
  title = {Ga添加によるAlNへのSc固溶量の増加とその強誘電性および圧電性への影響},
  booktitle = {},
  year = 2024,
}

@inproceedings{CTT100920065,
  author = {Nana SUN and Kazuki Okamoto and Shinnosuke Yasuoka and Naoko Matsui and Toshikazu Irisawa and Koji Tsunekawa and Soshun Doko and Hiroshi Funakubo},
  title = {High stability of ferroelectricity against hydrogen gas in (Al,Sc)N thin films},
  booktitle = {},
  year = 2024,
}

@inproceedings{CTT100919974,
  author = {影山壮太郎 and 岡本一輝 and 安岡慎之介 and 上岡義弘 and 召田雅実 and 舟窪浩},
  title = {MgSiN2薄膜の作製と特性評価},
  booktitle = {},
  year = 2024,
}

@inproceedings{CTT100917768,
  author = {髙橋良 and 江原祥隆 and 竹尾勇司 and 濱嵜容丞 and 澤井眞也 and 平田靖透 and 宮内良広 and 安井伸太郎 and 安岡慎之介 and 舟窪浩 and 西田謙},
  title = {チューナブルデバイス応用へ向けたBa(Zr,Ti)O3膜の作製と評価},
  booktitle = {},
  year = 2024,
}

@inproceedings{CTT100919855,
  author = {影山壮太郎 and 岡本一輝 and 安岡慎之介 and 舟窪浩},
  title = {スパッタリング法によるAlN-(Mg, Si)N膜の作製とその特性評価},
  booktitle = {},
  year = 2024,
}

@inproceedings{CTT100917798,
  author = {Nana Sun and Kazuki Okamoto and Shinnosuke Yasuoka and Naoko Matsui and Toshikazu Irisawa and Koji Tsunekawa and Hiroshi Funakubo},
  title = {Effect of gas annealing on the ferroelectric property of (Al0.8Sc0.2)N thin film},
  booktitle = {},
  year = 2024,
}

@inproceedings{CTT100917795,
  author = {舟窪浩 and 茶谷那知 and 平井浩司 and 安岡慎之介 and 岡本一輝 and 山岡和希子 and 井上ゆか梨},
  title = {スパッタリング法によるHfO2-CeO2強誘電体薄膜のYSZ基板上への非加熱合成},
  booktitle = {},
  year = 2024,
}

@inproceedings{CTT100917454,
  author = {Nachi Chaya and Koji Hirai and Shinnosuke Yasuoka and Kazuki Okamoto and Wakiko Yamaoka and Yukari Inoue and Hiroshi Funakubo},
  title = {No heating deposition of CeO2-HfO2 ferroelectric thick films by sputtering method},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100917450,
  author = {Kazuki Okamoto and Reika Ota and Shinnosuke Yasuoka and Yoshihiro Ueoka and Yoshiro Kususe and Masami Mesuda and Hiroshi Funakubo},
  title = {Crystal structure and electrical properties of (Al, Ga, Sc)N temary thin films prepared by RF sputtering},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100917767,
  author = {Ryo Takahashi and Yoshitaka Ehara and Yosuke Hamasaki and Shinya Sawai and Shintaro Yasui and Shinnosuke Yasuoka and Hiroshi Funakubo and Ken Nishida},
  title = {Influence of Thickness and Composition Dependence on Dielectric Tunability in Ba(ZrxTi1-x)O3 Films Grown on MgO Substrate},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100917758,
  author = {Shinnosuke Yasuoka and Kazuki Okamoto and Takao Shimizu and Hiroshi Funakubo},
  title = {Characterization of Ferroelectric Switching Properties for (Al,Sc)N Films with Various Composition},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100917519,
  author = {Reika Ota and Shinnosuke Yasuoka and Kazuki Okamoto and Yoshihiro Ueoka and Yoshiro Kususe and Masami Mesuda and Hiroshi Funakubo},
  title = {Ferroelectric Property Improvement of (Al1-x-yGaxScy)N Ternary Thin Films},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100912057,
  author = {高橋良 and 江原祥隆 and 濱嵜容丞 and 澤井眞也 and 安井伸太郎 and 安岡慎之介 and 舟窪浩 and 西田謙},
  title = {MgO単結晶基板上にエピタキシャル成長させたBa(Zr,Ti)O3膜の結晶構造の膜厚及び組成依存性},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100903681,
  author = {安岡 慎之介 and 岡本 一輝 and 清水 荘雄 and 松井 尚子 and 入澤 寿和 and 恒川 孝二 and 舟窪 浩},
  title = {種々の組成の(Al, Sc)N多層膜のスイッチング特性評価},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100912054,
  author = {Riku Shikauchi and Zhongzheng Sun and Shinnosuke Yasuoka and Ryosuke Nitta and Seiichiro Izawa and Hiroshi Funakubo and Yutaka Majima},
  title = {Ferroelectric Tunnel Junctions based on AlScN},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100901299,
  author = {茶谷那知 and 平井浩司 and 安岡慎之介 and 岡本一輝 and 山岡和希子 and 井上ゆか梨 and 舟窪浩},
  title = {スパッタリング法によるHfO2-CeO2強誘電体厚膜の非加熱合成},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100901301,
  author = {安岡慎之介 and 大田怜佳 and 岡本一輝 and 清水荘雄 and 舟窪浩},
  title = {NbN電極上に作製したエピタキシャル(Al, Sc)N膜の電気特性評価},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100901296,
  author = {前川芳輝 and 平井浩司 and 安岡慎之介 and 岡本一輝 and 清水荘雄 and 舟窪浩},
  title = {様々な基板上におけるY:HfO2エピタキシャル膜の合成と評価},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100901291,
  author = {茶谷那知 and 平井浩司 and 安岡慎之介 and 岡本一輝 and 舟窪浩},
  title = {フレキシブルデバイスに向けたHfO2基強誘電体厚膜の室温合成と圧電性の評価},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100901294,
  author = {前川芳輝 and 平井浩司 and 安岡慎之介 and 岡本一輝 and 清水荘雄 and 舟窪浩},
  title = {種々の基板上におけるHfO2基エピタキシャル膜の合成と評価},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100901292,
  author = {中畑美紀 and 岡本一輝 and 胡雨弦 and 安岡慎之介 and 石濱圭佑 and 舟窪浩},
  title = {正方晶Pb(Zr,Ti)O3薄膜における圧電特性の膜厚依存性},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100904715,
  author = {Ryo Takahashi and Yoshitaka Ehara and Yosuke Hamasaki and Shintaro Yasui and Shinnosuke Yasuoka and Hiroshi Funakubo and Shinya Sawai and Ken Nishida},
  title = {Crystal Structure and Electric Properties of (100) Ba(ZrxTi1-x)O3 Thin Films on MgO Substrates by Pulse Laser Deposition Technique},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100904716,
  author = {Masato Uehara and Ryoichi Mizutani and Shinnosuke Yasuoka and Takao Shimizu and Hiroshi Yamada and Morito Akiyama and Hiroshi Funakubo},
  title = {Demonstration of Ferroelectric Properties in GaN Alloyed with Sc},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100904701,
  author = {Reika Ota and Shinnosuke Yasuoka and Ryoichi Mizutani and Takahisa Shiraishi and Kuniyuki Kakushima and Hiroshi Funakubo},
  title = {Ferroelectricity of 20-nm Thick (Al0.8Sc0.2)N Thin Films with TiN Electrodes},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100902544,
  author = {Hiroshi Funakubo and Shinnosuke Yasuoka and Ryoichi Mizutani and Takahisa Shiraishi and Akinori Tateyama and Reika Ota and Kazuki Okamoto and Takao Shimizu and Masato Uehara and Hiroshi Yamada and Morito Akiyama},
  title = {Thickness Scaling and Low Voltage Operation of Ferroelectric (Al1-xScx)N Films Prepared by Sputtering Method},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100902980,
  author = {上原雅人 and 水谷涼一 and 安岡慎之介 and 清水荘雄 and 山田浩志 and 秋山守人 and 舟窪浩},
  title = {Sc添加GaＮ薄膜の強誘電性へのSc濃度と温度の影響},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100901288,
  author = {岡本一輝 and 安岡慎之介 and 大田怜佳 and 舟窪浩 and 松井尚子 and 入澤寿和 and 恒川孝二},
  title = {水素ガス熱処理が(Al,Sc)N 薄膜の強誘電特性へ及ぼす影響},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100901287,
  author = {安岡慎之介 and 大田怜佳 and 岡本一輝 and 石濱圭佑 and 清水荘雄 and 角嶋邦之 and 上原雅人 and 山田浩志 and 秋山守人 and 小金澤智之 and L. S. R. Kumara and Okkyun Seo and 坂田修身 and 舟窪浩},
  title = {メモリ応用に向けた(Al, Sc)N膜の薄膜化の検討},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100902893,
  author = {高橋良 and 江原祥隆 and 濵嵜容丞 and 澤井眞也 and 安井伸太郎 and 安岡慎之介 and 舟窪浩 and 西田謙},
  title = {MgO基板上に製膜したBa(ZrxTi1-x)O3の結晶構造と誘電特性},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100901289,
  author = {大田怜佳 and 安岡慎之介 and 岡本一輝 and 上岡義弘 and 楠瀬好郎 and 召田雅実 and 舟窪浩},
  title = {(Al1-x-yGaxScy)N薄膜の結晶構造および強誘電性},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100902550,
  author = {Shinnosuke Yasuoka and Ryoichi Mizutani and Reika Ota and Takahisa Shiraishi and Takao Shimizu and Masato Uehara and Hiroshi Yamada and Morito Akiyama and Hiroshi Funakubo},
  title = {Establishment of Control Method for Ferroelectric Properties in (Al1-xScx)N Films},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100875597,
  author = {安岡慎之介 and 水谷涼一 and 大田怜佳 and 白石貴久 and 清水荘雄 and 安井伸太郎 and 江原祥隆 and 西田謙 and 上原雅人 and 山田浩志 and 秋山守人 and 今井康彦 and 坂田修身 and 舟窪浩},
  title = {薄膜化による(Al,Sc)N膜の結晶異方性及び強誘電特性の向上},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100875596,
  author = {安岡慎之介 and 水谷涼一 and 大田怜佳 and 白石貴久 and 清水荘雄 and 上原雅人 and 山田浩志 and 秋山守人 and 舟窪浩},
  title = {面内配向及び熱歪による(Al,Sc)N薄膜の強誘電特性の制御},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100874847,
  author = {大田怜佳 and 安岡慎之介 and 水谷涼一 and 白石貴久 and 舟窪浩},
  title = {種々の電極を用いた(Al1-x,Scx)N薄膜の強誘電性評価},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100874660,
  author = {Ryoichi Mizutani and Shinnosuke Yasuoka and Takao Shimizu and Hiroshi Funakubo},
  title = {Temperature dependence of ferroelectricity in (Al1-xScx)N thin films},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100865364,
  author = {Hiroshi Funakubo and Shinnosuke Yasuoka and Ryoichi Mizutani and Takahisa Shiraishi and Akinori Tateyama and Takao Shimizu and Masato Uehara and Hiroshi Yamada and Morito Akiyama and Yoshiomi Hiranaga and Yasuo Cho},
  title = {Control of Ferroelectric Property in (Al1-xScx)N Films Prepared by Sputtering Method},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100874647,
  author = {安岡慎之介 and 水谷涼一 and 大田怜佳 and 白石貴久 and 清水荘雄 and 上原雅人 and 山田浩志 and 秋山守人 and 舟窪浩},
  title = {強誘電体(Al1-xScx)N薄膜の結晶構造と電気特性の関係},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100865390,
  author = {Shinnosuke Yasuoka and Takao Shimizu and Masato Uehara and Hiroshi Yamada and Morito Akiyama and Yoshiomi Hiranaga and Yasuo Cho and Hiroshi Funakubo},
  title = {Downscaling and low temperature deposition of ferroelectric (Al1-xScx)N thin films deposited by dual sputtering},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100853357,
  author = {水谷涼一 and 安岡慎之介 and 清水荘雄 and 舟窪浩},
  title = {(ScxAl1-x)N薄膜の強誘電性の温度依存性},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100853348,
  author = {安岡慎之介 and 清水荘雄 and 舟窪浩},
  title = {エピタキシャル(Al1-xScx)N膜の作製と強誘電性評価},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100853246,
  author = {安岡慎之介 and 清水荘雄 and 上原雅人 and 山田浩志 and 秋山守人 and 舟窪浩},
  title = {スパッタリング法で室温合成した(Al1-xScx)N膜の強誘電性評価},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100852901,
  author = {安岡 慎之介 and 清水 荘雄 and 上原雅人 and 山田浩志 and 秋山守人 and 舟窪 浩},
  title = {二次元スパッタリング法により作製した(Al1-xScx)N 薄膜の強誘電特性},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100821817,
  author = {安岡慎之介 and 清水荘雄 and 上原雅人 and 舟窪浩},
  title = {(Al1-xScx)N薄膜の強誘電特性に及ぼす製膜条件の影響},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100821818,
  author = {上原雅人 and 安岡慎之介 and 清水荘雄 and 山田浩志 and 秋山守人 and 舟窪浩},
  title = {スパッタリング法で作製したGaNおよびSc添加GaN薄膜の強誘電性評価},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100821779,
  author = {安岡慎之介 and 清水荘雄 and 上原雅人 and 舟窪浩},
  title = {二元同時スパッタリング法によるAl1-xScxN薄膜の作製と強誘電性評価},
  booktitle = {},
  year = 2020,
}

@misc{CTT100876028,
  author = {舟窪 浩 and 安岡 慎之介 and 清水 荘雄},
  title = {ウルツ鉱構造窒化物の強誘電性 ―強誘電体の脱ペロブスカイト構造酸化物―},
  year = 2021,
}

@misc{CTT100876025,
  author = {舟窪 浩 and 安岡 慎之介 and 水谷 涼一 and 清水 荘雄},
  title = {ウルツ鉱構造窒化物の強誘電性},
  year = 2021,
}

@misc{CTT100836410,
  author = {安岡慎之介 and 清水荘雄 and 舟窪浩},
  title = {窒化物圧電体膜の微構造評価},
  year = 2020,
}

@misc{CTT100917507,
  author = {Shinnosuke Yasuoka},
  title = {Study on Crystal Structure and Ferroelectricity in Wurtzite (Al,Sc)N Thin Films Deposited by Sputtering Method},
  year = 2024,
}

@misc{CTT100909451,
  author = {Shinnosuke Yasuoka},
  title = {Study on crystal structure and ferroelectricity in wurtzite (Al,Sc)N thin films deposited by sputtering method},
  year = 2024,
}

@misc{CTT100909450,
  author = {Shinnosuke Yasuoka},
  title = {Study on crystal structure and ferroelectricity in wurtzite (Al,Sc)N thin films deposited by sputtering method},
  year = 2024,
}

@misc{CTT100909449,
  author = {Shinnosuke Yasuoka},
  title = {Study on crystal structure and ferroelectricity in wurtzite (Al,Sc)N thin films deposited by sputtering method},
  year = 2024,
}

@misc{CTT100908575,
  author = {舟窪浩 and 白石貴久 and 安岡慎之介 and 水谷涼一 and 大田怜佳 and 召田　雅実　 and 楠瀬　好郎 and 上岡　義弘　 and 末本　祐也　 and 飯浜　準也　},
  title = {窒化アルミニウムスカンジウム膜及び強誘電体素子},
  howpublished = {公開特許},
  year = 2023,
  month  = {},
  note   = {PCT/JP2023/013181(2023/03/30), WO 2023/190869(2023/10/05)}
}


@misc{CTT100900373,
  author = {舟窪浩 and 清水荘雄 and 安岡慎之介 and 上原　雅人 and 山田　浩志　 and 秋山　守人},
  title = {強誘電性薄膜、それを用いた電子素子および強誘電性薄膜の製造方法},
  howpublished = {登録特許},
  year = 2023,
  month  = {},
  note   = {特願2021-567693(2020/12/25), 特許第7260863号(2023/04/11)}
}




@phdthesis{CTT100917507,
  author = {Shinnosuke Yasuoka},
  title = {Study on Crystal Structure and Ferroelectricity in Wurtzite (Al,Sc)N Thin Films Deposited by Sputtering Method},
  school = {東京工業大学},
  year = 2024,
}

@phdthesis{CTT100909451,
  author = {Shinnosuke Yasuoka},
  title = {Study on crystal structure and ferroelectricity in wurtzite (Al,Sc)N thin films deposited by sputtering method},
  school = {東京工業大学},
  year = 2024,
}

@phdthesis{CTT100909450,
  author = {Shinnosuke Yasuoka},
  title = {Study on crystal structure and ferroelectricity in wurtzite (Al,Sc)N thin films deposited by sputtering method},
  school = {東京工業大学},
  year = 2024,
}

@phdthesis{CTT100909449,
  author = {Shinnosuke Yasuoka},
  title = {Study on crystal structure and ferroelectricity in wurtzite (Al,Sc)N thin films deposited by sputtering method},
  school = {東京工業大学},
  year = 2024,
}