@article{CTT100845762,
  author = {T. Aota and A. Hayasaka and I. Makabe and S. Yoshida and T. Gotow and Y. Miyamoto},
  title = {Wet etching for isolation of N-polar GaN HEMT structure by electrodeless photo-assisted electrochemical reaction},
  journal = {Japanese Journal of Applied Physics},
  year = 2021,
}

@inproceedings{CTT100842580,
  author = {Tomoya Aota and Akihiro Hayasaka and isao makabe and Shigeki Yoshida and Takahiro Gotow and YASUYUKI MIYAMOTO},
  title = {Wet Etching for Isolation of N-polar GaN HEMT Structure by Electrodeless Photo-Assisted Electrochemical Reaction},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100842581,
  author = {青田 智也 and 早坂 明泰 and 眞壁 勇夫 and 吉田 成輝 and 後藤 高寛 and 宮本 恭幸},
  title = {N極性GaN HEMT構造での無電極PECエッチング},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100822693,
  author = {毛利 匡裕 and 早坂 明泰 and 眞壁 勇夫 and 吉田 成輝 and 後藤 高寛 and 宮本 恭幸},
  title = {N極性GaN HEMT構造におけるコンタクト抵抗の低減},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100822692,
  author = {早坂 明泰 and 青沼 遼介 and 堀田 航史 and 金井 七重 and 眞壁 勇夫 and 吉田 成輝 and 宮本 恭幸},
  title = {N極性GaN HEMT作製プロセスにおけるプラズマダメージの低減},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100800936,
  author = {A. Hayasaka and R. Aonuma and K. Hotta and I. Makabe and S. Yoshida and Y. Miyamoto},
  title = {N-polar GaN HEMT with Al2O3 gate insulator},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100800846,
  author = {早坂 明泰 and 青沼 遼介 and 堀田 航史 and 眞壁 勇夫 and 吉田 成輝 and 宮本 恭幸},
  title = {Al2O3ゲート絶縁膜を持つN極性GaN HEMT},
  booktitle = {},
  year = 2019,
}