@inproceedings{CTT100800887, author = {木下 治紀 and 金澤 徹 and 祢津 誠晃 and 三嶋 裕一 and 宮本 恭幸}, title = {再成長ソース/ドレインを有するInGaAsマルチゲートMOSFET作製プロセス}, booktitle = {}, year = 2015, } @inproceedings{CTT100721938, author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and K. Ohsawa and Y. Mishima and M. Fujimatsu and K. Ohashi and S. Nestu and S. Iwata}, title = {InGaAs channel for low supply voltage}, booktitle = {}, year = 2015, } @inproceedings{CTT100721910, author = {H.Kinoshita and S.Netsu and Y.mishima and T.Kanazawa and Y.Miyamoto}, title = {Fabrication of InGaAs channel multi-gate MOSFETs with MOVPE regrown source/drain}, booktitle = {}, year = 2015, } @inproceedings{CTT100721886, author = {K. Ohsawa and Y. Mishima and Y. Miyamoto}, title = {Operation of 13-nm channel length InGaAs-MOSFET with n-InP source}, booktitle = {}, year = 2015, } @inproceedings{CTT100693238, author = {木下 治紀 and 金澤 徹 and 祢津 誠晃 and 三嶋 裕一 and 宮本 恭幸}, title = {再成長ソース/ドレインを有するInGaAsマルチゲートMOSFET作製プロセスに関する研究}, booktitle = {}, year = 2015, } @inproceedings{CTT100693237, author = {大澤 一斗 and 三嶋 裕一 and 宮本 恭幸}, title = {InGaAs-MOSFETのチャネル長微細化に関する研究}, booktitle = {}, year = 2015, } @inproceedings{CTT100679168, author = {Y. Mishima and T. Kanazawa and H. Kinoshita and E. Uehara and Y. Miyamoto}, title = {InGaAs tri-gate MOSFETs with MOVPE regrown source/drain}, booktitle = {}, year = 2014, } @inproceedings{CTT100679169, author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and K. Ohsawa and Y. Mishima and T. Irisawa and M. Oda and T. Tezuka}, title = {(Invited) Growth Process for High Performance of InGaAs MOSFETs}, booktitle = {}, year = 2014, } @inproceedings{CTT100679181, author = {三嶋裕一 and 金澤徹 and 木下治紀 and 上原英治 and 宮本恭幸}, title = {再成長ソース/ドレインを有するInGaAsチャネルトライゲートMOSFET}, booktitle = {}, year = 2014, } @inproceedings{CTT100679178, author = {金澤徹 and 三嶋裕一 and 木下治紀 and 上原英治 and 宮本恭幸}, title = {MOVPE再成長ソース/ドレインを有するInGaAsトライゲートMOSFET}, booktitle = {IEICE technical report}, year = 2014, }