@article{CTT100887491,
  author = {J. Kotani and K. Makiyama and T. Ohki and S. Ozaki and N. Okamoto and Y. Minoura and M. Sato and N. Nakamura and Y. Miyamoto},
  title = {High-Power-Density InAlGaN/GaN HEMT using InGaN back barrier for W-band amplifiers},
  journal = {ELECTRON. LETT.},
  year = 2023,
}

@inproceedings{CTT100887485,
  author = {K. Makiyama and S. Yoshida and K. Nakata and Y. Miyamoto},
  title = {Innovative RF Device Technologies for Advanced Information and Communications Network Society},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100887482,
  author = {Y. Miyamoto and K. Makiyama},
  title = {Lateral thickness change of the high-k film on GaN HEMT for uniform electric field},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100758803,
  author = {K. Makiyama and T. Ohki and S. Ozaki and Y. Niida and N. Okamoto and Y. Minoura and M. Sato and Y. Kamada and T. Ishiguro and K. Joshin and N. Nakamura and Y. Miyamoto},
  title = {InAlGaN/GaN-HEMT Device Technologies for High-Power-Density W-band Amplifiers (Invited)},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100752745,
  author = {K. Makiyama and S. Ozaki and Y. Niida and T. Ohki and N. Okamoto and Y. Minoura and M. Sato and Yoichi Kamada and K. Joshin and N. Nakamura and Yasuyuki Miyamoto},
  title = {Advanced HEMTs and MMICs Technologies for Next Generation Millimeter-wave Amplifiers (Invited)},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100752749,
  author = {K. Makiyama and Y. Niida and S. Ozaki and T. Ohki and N. Okamoto and Y. Minoura and M. Sato and Y. Kamada and K. Joshin and K. Watanabe and Y. Miyamoto},
  title = {GaN HEMT Device Technology for W-band Power Amplifiers (Invited)},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100740975,
  author = {K. Makiyama and Y. Niida and S. Ozaki and T. Ohki and N. Okamoto and Y. Minoura and M. Sato and Y. Kamada and K. Joshin and K. Watanabe and Y. Miyamoto},
  title = {High-Power-Density InAlGaN/GaN-HEMT Technology for W-Band Amplifier (Invited)},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100740969,
  author = {K. Makiyama and S. Ozaki and T. Ohki and N. Okamoto and Y. Minoura and Y. Niida and Y. Kamada and M. Sato and K. Joshin and K. Watanabe and Y. Miyamoto},
  title = {High-Performance GaN-HEMT Technology for W-band Amplifier (Invited)},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100740965,
  author = {K. Makiyama and S. Ozaki and Y. Niida and T. Ohki and N. Okamoto and Y. Minoura and M. Sato and Y. Kamada and K. Joshin and K. Watanabe and Y. Miyamoto},
  title = {InAlGaN/GaN-HEMT device technologies for W-band high-power amplifier (Invited)},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100717942,
  author = {K. Makiyama and S. Ozaki and T. Ohki and N. Okamoto and Y. Minoura and Y. Niida and Y. Kamada and K. Joshin and K. Watanabe and Y. Miyamoto},
  title = {Collapse Free High Power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz},
  booktitle = {},
  year = 2015,
}

@misc{CTT100726777,
  author = {牧山剛三},
  title = {ミリ波増幅器向けGaN-HEMTの高出力・高周波化技術およびデバイスモデル構築},
  year = 2016,
}

@misc{CTT100712268,
  author = {牧山剛三},
  title = {ミリ波増幅器向けGaN-HEMTの高出力・高周波化技術およびデバイスモデル構築},
  year = 2016,
}

@misc{CTT100712271,
  author = {牧山剛三},
  title = {ミリ波増幅器向けGaN-HEMTの高出力・高周波化技術およびデバイスモデル構築},
  year = 2016,
}

@misc{CTT100712270,
  author = {牧山剛三},
  title = {ミリ波増幅器向けGaN-HEMTの高出力・高周波化技術およびデバイスモデル構築},
  year = 2016,
}



@phdthesis{CTT100726777,
  author = {牧山剛三},
  title = {ミリ波増幅器向けGaN-HEMTの高出力・高周波化技術およびデバイスモデル構築},
  school = {東京工業大学},
  year = 2016,
}

@phdthesis{CTT100712268,
  author = {牧山剛三},
  title = {ミリ波増幅器向けGaN-HEMTの高出力・高周波化技術およびデバイスモデル構築},
  school = {東京工業大学},
  year = 2016,
}

@phdthesis{CTT100712271,
  author = {牧山剛三},
  title = {ミリ波増幅器向けGaN-HEMTの高出力・高周波化技術およびデバイスモデル構築},
  school = {東京工業大学},
  year = 2016,
}

@phdthesis{CTT100712270,
  author = {牧山剛三},
  title = {ミリ波増幅器向けGaN-HEMTの高出力・高周波化技術およびデバイスモデル構築},
  school = {東京工業大学},
  year = 2016,
}