@article{CTT100874132, author = {Takashi Yoda and Noboru Ishihara and Yuta Oshima and Motoki Ando and Kohei Kashiwagi and Ryoichiro Yoshida and Arisa Kimura and Kaito Kuroki and Shinsuke Nabeya and Kenji Hirakawa and Masayuki Iwase and Munehiro Ogasawara and Hiroyuki Ito}, title = {Total ionizing dose effect on 2-D array data transfer ICs designed and fabricated by 0.18 μm CMOS technology}, journal = {Japanese Journal of Applied Physics}, year = 2022, } @article{CTT100874137, author = {Munehiro Ogasawara and Ryoichiro Yoshida and Yuta Oshima and Motoki Ando and Arisa Kimura and Kenji Hirakawa and Masayuki Iwase and Shinsuke Nabeya and Takashi Yoda and Noboru Ishihara and Hiroyuki Ito}, title = {Dependence of total ionizing dose effect of nMOS transistors on the on/off duty ratio of a gate voltage}, journal = {Japanese Journal of Applied Physics}, year = 2021, } @inproceedings{CTT100885803, author = {木村有佐 and 吉田僚一郎 and 安藤幹 and 大島佑太 and 鍋屋信介 and 平川顕二 and 岩瀬正幸 and 小笠原宗博 and 依田孝 and 石原昇 and 伊藤浩之}, title = {P型とN型のFETサイズ比が異なるCMOS論理回路へのγ線照射の影響}, booktitle = {}, year = 2021, } @inproceedings{CTT100884747, author = {吉田僚一郎 and 木村有佐 and 安藤幹 and 大島佑太 and 鍋屋信介 and 平川顕二 and 岩瀬正幸 and 石原昇 and 小笠原宗博 and 依田孝 and 伊藤浩之}, title = {ELT(Enclosed Layout Transistor)による耐放射線CMOS集積回路の設計}, booktitle = {情報処理学会シンポジウムシリーズ}, year = 2021, } @inproceedings{CTT100885802, author = {木村有佐 and 吉田僚一郎 and 安藤幹 and 大島佑太 and 鍋屋信介 and 平川顕二 and 岩瀬正幸 and 小笠原宗博 and 依田孝 and 石原昇 and 伊藤浩之}, title = {CMOSリング発振回路へのγ線照射の影響とその要因解析}, booktitle = {}, year = 2021, } @inproceedings{CTT100865291, author = {Takashi Yoda and Noboru Ishihara and Yuta Oshima and Motoki Ando and Ryoichiro Yoshida and Shinsuke Nabeya and Kenji Hirakawa and Masayuki Iwase and Munehiro Ogasawara and Hiroyuki Ito}, title = {CMOS 2-D Array Data Transfer Circuit Design and Evaluation for Use in A Radiation Environment}, booktitle = {}, year = 2021, } @inproceedings{CTT100885801, author = {木村有佐 and 吉田僚一郎 and 安藤幹 and 大島佑太 and 鍋屋信介 and 平川顕二 and 岩瀬正幸 and 小笠原宗博 and 依田孝 and 石原昇 and 伊藤浩之}, title = {リング発振回路におけるELTの耐放射線評価}, booktitle = {}, year = 2021, } @inproceedings{CTT100842070, author = {吉田僚一郎 and 木村有佐 and 安藤幹 and 大島佑太 and 鍋屋信介 and 平川顕二 and 岩瀬正幸 and 小笠原宗博 and 依田孝 and 石原昇 and 伊藤浩之}, title = {高累積線量におけるMOSFETのゲートバイアス特性比較}, booktitle = {}, year = 2020, } @inproceedings{CTT100880818, author = {安藤幹 and 大島佑太 and 平川顕二 and 岩瀬正幸 and 小笠原宗博 and 依田孝 and 石原昇 and 伊藤浩之}, title = {CMOS論理回路におけるTIDの影響評価}, booktitle = {}, year = 2019, } @inproceedings{CTT100880813, author = {大島佑太 and 安藤幹 and 平川顕二 and 岩瀬正幸 and 小笠原宗博 and 依田孝 and 石原昇 and 伊藤浩之}, title = {TID影響下におけるMOSFETの動的特性劣化モデルの開発}, booktitle = {}, year = 2019, }