@article{CTT100800918,
  author = {W Zhang and T. Kanazawa and Y. Miyamoto},
  title = {Performance improvement of a p-MoS2/HfS2 van der Waals heterostructure tunnelling field-effect transistor by UV-O3 treatment},
  journal = {Apl. Phys. Exp},
  year = 2019,
}

@article{CTT100800892,
  author = {W Zhang and S. Netsu and T. Kanazawa and T. Amemiya and Y. Miyamoto},
  title = {Effect of increasing gate capacitance on the performance of a p-MoS2/HfS2 van der Waals heterostructure tunneling field-effect transistor},
  journal = {Jpn. J. Appl. Phys},
  year = 2019,
}

@inproceedings{CTT100800847,
  author = {張 文倫 and 金澤 徹 and 北村 稔 and 宮本 恭幸},
  title = {UV-O3表面酸化によるHfS2 MOSFETの性能改善},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100800854,
  author = {張 文倫 and 祢津 誠晃 and 金澤 徹 and 雨宮 智宏 and 宮本 恭幸},
  title = {埋め込みNiバックゲートを用いたp-MoS2/HfS2トンネルFET},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800925,
  author = {W. Zhang and S. Netsu and T.Kanazawa and T. Amemiya and Y. Miyamoto},
  title = {p-MoS2/HfS2 van der Waals Heterostructure Transistor Using Ni Backgate Buried in HfO2 Dielectric},
  booktitle = {},
  year = 2018,
}