@article{CTT100659580,
  author = {M. Kashiwano and J. Hirai and S. Ikeda and M. Fujimatsu and Y. Miyamoto},
  title = {High Open-Circuit Voltage Gain in Vertical InGaAs Channel Metal–Insulator–Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa},
  journal = {JPN. J. APPL. PHYS.},
  year = 2013,
}

@inproceedings{CTT100740963,
  author = {M. Kashiwano and A. Yukimachi and Y. Miyamoto},
  title = {Experimental approach for feasibility of superlattice FETs},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100693240,
  author = {行待 篤志 and 柏野 壮志 and 宮本 恭幸},
  title = {超格子FETに向けたダブルバリアp-i-n接合ダイオード},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693229,
  author = {宮本恭幸 and 金澤 徹 and 米内義晴 and 加藤 淳 and 藤松基彦 and 柏野壮志 and 大澤一斗 and 大橋一水},
  title = {低電圧/高速動作にむけたInGaAs MOSFETソース構造},
  booktitle = {IEICE Technical Report},
  year = 2014,
}

@inproceedings{CTT100679167,
  author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and A. Kato and M. Fujimatsu and M. Kashiwano and K. Ohsawa and K. Ohashi},
  title = {(Invited) InGaAs MOSFET Source Structures Toward High Speed/low Power Applications},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100679164,
  author = {M. Kashiwano and A. Yukimachi and Y. Miyamoto},
  title = {Dependence of the Carrier Concentration in InGaAs/InP Superlattice-based FETs with a Steep Subthreshold Slope},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100679174,
  author = {柏野壮志 and 行待篤志 and 宮本恭幸},
  title = {急峻なSS特性の為のInGaAs/InP超格子FETにおけるキャリア濃度依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659766,
  author = {柏野壮志 and 平井準 and 池田俊介 and 藤松基彦 and 宮本恭幸},
  title = {半導体ドレイン層及び狭チャネルメサ幅による縦型 InGaAs チャネル MISFET の高電圧利得化},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100659714,
  author = {M. Kashiwano and J. Hirai and S. Ikeda and M. Fujimatsu and Y. Miyamoto},
  title = {High Open Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor using Heavily Doped Drain Region and Narrow Channel Mesa},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642429,
  author = {柏野壮志 and 平井準 and 池田俊介 and 藤松基彦 and 宮本恭幸},
  title = {半導体ドレイン層及び狭チャネルメサ幅による縦型InGaAsチャネルMISFETの高電圧利得化},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642428,
  author = {柏野壮志 and 平井準 and 池田俊介 and 藤松基彦 and 宮本恭幸},
  title = {GaN HEMT のソース・ドレイン間容量のデバイスシミュレーションによる解析},
  booktitle = {},
  year = 2012,
}

@misc{CTT100677655,
  author = {宮本恭幸 and 柏野壮志 and 金澤徹},
  title = {電界効果トランジスタ},
  howpublished = {公開特許},
  year = 2014,
  month  = {},
  note   = {特願2013-001907(2013/01/09), 特開2014-135359(2014/07/24)}
}