@article{CTT100613512, author = {A. Uedono and KAZUO TSUTSUI and S. Ishibashi and H. Watanabe and S. Kubota and Yasumasa Nakagawa and Bunji Mizuno and takeo hattori and HIROSHI IWAI}, title = {Vacancy-Boron Complexes in Plasama Immersion lon-lmplanted Si Probed by a Monoenergetic Positron Beam}, journal = {Japanese Journal of Applied Physics}, year = 2010, } @inproceedings{CTT100605137, author = {KAZUO TSUTSUI and Norifumi Hoshino and Yasumasa Nakagawa and Masaoki Tanaka and Hiroshi Nohira and Kuniyuki KAKUSHIMA and Ahmet Parhat and 佐々木雄一朗 and Bunji Mizuno and takeo hattori and HIROSHI IWAI}, title = {Depth Profiling of Chemical Bonding States of Impurity Atoms and Their Correlation with Electrical Activity in Si Shallow Junctions}, booktitle = {}, year = 2010, } @inproceedings{CTT100605145, author = {Akira Uedono and KAZUO TSUTSUI and Shoji Ishibashi and Hiromichi Watanabe and Shoji Kubota and Kazuki Tenjinbayashi and Yasumasa Nakagawa and Bunji Mizuno and takeo hattori and HIROSHI IWAI}, title = {Vacancy-Type Defects in Ultra-Shallow Junctions Fabricated Using Plasma Doping Studied by Positron Annihilation}, booktitle = {}, year = 2010, } @inproceedings{CTT100585442, author = {星野憲文 and 中川恭成 and 野平博司 and 室 隆桂之 and 加藤 有香子 and 甲斐隆行 and 金成国 and パールハットアヘメト and 角嶋邦之 and 水野文二 and 木下 豊彦 and 筒井一生 and 服部健雄 and 岩井洋}, title = {光電子分光によるSi中Asの化学結合状態評価}, booktitle = {第56回応用物理学関係連合講演会予稿集}, year = 2009, } @inproceedings{CTT100830635, author = {K. Tsutsui and M. Watanabe and Y. Nakagawa and T. Matsuda and Y. Yoshida and E. Ikenaga and K. Kakushima and P. Ahmet and H. Nohira and T. Maruizumi and A. Ogura and T. Hattori and H. Iwai}, title = {New Analysis of Heavily Doped Boron and Arsenic in Shallow Junctions by X-Ray Photoelectron Spectroscopy}, booktitle = {}, year = 2008, } @inproceedings{CTT100585117, author = {酒井一憲 and 中川恭成 and 横田知之 and 金成国 and 岡下勝己 and 佐々木雄一朗 and パールハットアヘメト and 角嶋邦之 and 水野文二 and 服部健雄 and 筒井一生 and 岩井洋}, title = {3次元Fin構造中不純物プロファイリングのための反復犠牲酸化エッチング}, booktitle = {秋季第69回応用物理学会学術講演会予稿集}, year = 2008, } @inproceedings{CTT100585107, author = {中川恭成 and 野平博司 and 酒井一憲 and 横田 知之 and 甲斐 隆行 and 金成国 and パールハットアヘメト and 角嶋邦之 and 水野文二 and 服部健雄 and 筒井一生 and 岩井洋}, title = {光電子分光によるSi中Asの活性化状態の深さ方向分布評価}, booktitle = {応用物理学会}, year = 2008, } @inproceedings{CTT100830643, author = {Kazuo Tsutsui and Masamitsu Watanabe and Yasumasa Nakagawa and Kazunori Sakai and Takayuki Kai and Cheng-Guo Jin and Yuichiro Sasaki and Kuniyuki Kakushima and Parhat Ahmet and Bunji Mizuno and Takeo Hattori and Hiroshi Iwai.}, title = {Profiling of Carrier Properties for Shallow Junctions Using a New Sub-nanometer Step-by-step Etching Technique}, booktitle = {}, year = 2008, } @inproceedings{CTT100576432, author = {酒井一憲 and 渡邉将光 and 中川恭成 and 金 成国 and 岡下 勝己 and 佐々木雄一朗 and パールハットアヘメト and 角嶋邦之 and 水野 文二 and 服部健雄 and 筒井一生 and 岩井洋}, title = {極浅接合プロファイリングのための反復犠牲酸化エッチング技術}, booktitle = {春季第55回応用物理学会学術講演会予稿集}, year = 2008, }