@article{CTT100820790,
  author = {Shoichi Yoshitomi and Kentarou Yamanaka and Yusei Goto and Yuta Yokomura and Nobuhiko Nishiyama and Shigehisa Arai},
  title = {Continuous-wave operation of a 1.3 μm wavelength npn AlGaInAs/InP transistor laser up to 90 °C},
  journal = {Japanese Journal of Applied Physics},
  year = 2020,
}

@article{CTT100760684,
  author = {Shoichi Yoshitomi and Shotaro Tadano and Kentaro Yamanaka and Nobuhiko Nishiyama and Shigehisa Arai},
  title = {Lasing characteristics of 1.3-µm npn-AlGaInAs transistor-laser with narrower-bandgap p-GaInAsP base layer on semi-insulating InP substrate},
  journal = {Japanese Journal of Applied Physics},
  year = 2017,
}

@inproceedings{CTT100782726,
  author = {Shoichi Yoshitomi and Kentarou Yamanaka and Yusei Goto and Nobuhiko Nishiyama and SHIGEHISA ARAI},
  title = {Continuous wave operation up to 90°C of npn-AlGaInAs/InP transistor laser},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100774699,
  author = {Yusei Goto and Shoichi Yoshitomi and Kentarou Yamanaka and Nobuhiko Nishiyama and SHIGEHISA ARAI},
  title = {Optical-Response Analysis of Voltage-Modulated 1.3 μm Wavelength AlGaInAs/InP Transistor Laser},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100774742,
  author = {吉冨翔一 and 山中健太郎 and 後藤優征 and 西山伸彦 and 荒井滋久},
  title = {1.3 µm帯npn-AlGaInAs/InP トランジスタレーザの高温連続動作},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100774697,
  author = {後藤優征 and 吉冨翔一 and 山中健太郎 and 西山伸彦 and 荒井滋久},
  title = {キャリア変動による利得特性変化を考慮した電圧変調 1.3 μm帯npn-AlGaInAs/InP トランジスタレーザの大信号解析},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100774744,
  author = {Shoichi Yoshitomi and Kentarou Yamanaka and Yusei Goto and Nobuhiko Nishiyama and SHIGEHISA ARAI},
  title = {90 ℃ CW operation of  1.3-µm wavelength npn-AlGaInAs/InP transistor lasers by thick and wide base-electrode},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100758289,
  author = {吉冨翔一 and 山中健太郎 and 後藤優征 and 藤本直 and 西山伸彦 and 荒井滋久},
  title = {GRIN-SCH構造を有する1.3 µm帯npn-AlGaInAs/InP トランジスタレーザの静特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100758294,
  author = {後藤優征 and 山中健太郎 and 吉冨翔一 and 西山伸彦 and 荒井滋久},
  title = {1.3-µm帯npn-AlGaInAs/InP トランジスタレーザにおける 電気的応答を考慮した大信号特性の解析},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100758286,
  author = {吉冨翔一 and 只野翔太郎 and 山中健太郎 and 西山伸彦 and 荒井滋久},
  title = {1.3 µm帯トランジスタレーザにおける電流増幅率と 温度安定性の向上},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100744007,
  author = {Shoichi Yoshitomi and Shotaro Tadano and Kentarou Yamanaka and Nobuhiko Nishiyama and SHIGEHISA ARAI},
  title = {Thermal Characteristics of 1.3-μm npn-AlGaInAs/InP Transistor Laser with Au Plating},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100747593,
  author = {Kentarou Yamanaka and Shotaro Tadano and Shoichi Yoshitomi and Nobuhiko Nishiyama and SHIGEHISA ARAI},
  title = {Base Layer Design for Voltage Modulation in 1.3-μm Wavelength npn-AlGaInAs/InP Transistor Lasers},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100738246,
  author = {Shoichi Yoshitomi and Shotaro Tadano and Kentarou Yamanaka and Nobuhiko Nishiyama and SHIGEHISA ARAI},
  title = {Lasing Characteristics of  1.3-µm npn-AlGaInAs/InP Transistor Laser with Reduced Base Bandgap Structure},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100738165,
  author = {Kentarou Yamanaka and Shotaro Tadano and Shoichi Yoshitomi and Nobuhiko Nishiyama and SHIGEHISA ARAI},
  title = {Effect of GaInAsP Absorption Layer Composition on Voltage Modulation in 1.3-μm Wavelength npn-AlGaInAs/InP Transistor Lasers},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100747610,
  author = {吉冨翔一 and 只野翔太郎 and 山中健太郎 and 西山伸彦 and 荒井滋久},
  title = {1.3-μm帯npn-AlGaInAs/InPトランジスタレーザにおける高速電圧変調動作に向けた電気的応答特性の解析},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100738164,
  author = {山中健太郎 and 只野翔太郎 and 吉冨翔一 and 西山伸彦 and 荒井滋久},
  title = {1.3μm帯npn-AlGaInAs/InPトランジスタレーザの電圧変調動作に向けたGaInAsP吸収層組成の検討},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100747605,
  author = {吉冨翔一 and 只野翔太郎 and 山中健太郎 and 西山伸彦 and 荒井滋久},
  title = {p-GaInAsPベース層バンドギャップ低減による1.3-μm帯npn-AlGaInAs/InPトランジスタレーザの電流増幅率の向上},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100741338,
  author = {吉冨翔一 and 只野翔太郎 and 山中健太郎 and 西山伸彦 and 荒井滋久},
  title = {1.3-μm帯npn-AlGaInAs/InPトランジスタレーザにおける熱特性の向上},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100722896,
  author = {Shotaro Tadano and Takaaki Kaneko and Kentarou Yamanaka and Nobuhiko Nishiyama and SHIGEHISA ARAI},
  title = {Analysis of Voltage Dependence on Lasing Characteristics of 1.3-μm npn-AlGaInAs/InP Transistor Lasers},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100703865,
  author = {山中健太郎 and 金子貴晃 and 只野翔太郎 and 西山伸彦 and 荒井滋久},
  title = {1.3 μm 帯 npn-AlGaInAs/InP トラン ジスタレーザにおける 発振波長のコレクタ－ベース電圧依存性},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100703864,
  author = {只野翔太郎 and 金子貴晃 and 山中健太郎 and 西山伸彦 and 荒井滋久},
  title = {1.3μm帯npn-AlGaInAs/InPトランジスタレーザにおける 光出力特性と電気特性の評価},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100703860,
  author = {只野翔太郎 and 金子貴晃 and 山中健太郎 and 西山伸彦 and 荒井滋久},
  title = {埋め込みヘテロ構造を用いた1.3-µm帯npn-AlGaInAs/InP トランジスタレーザの特性評価},
  booktitle = {},
  year = 2016,
}