@article{CTT100735791,
  author = {Nobukazu Kise and Haruki Kinoshita and Atsushi Yukimachi and Toru Kanazawa and Yasuyuki Miyamoto},
  title = {Fin width dependence on gate controllability of InGaAs channel FinFETs with regrown source/drain},
  journal = {Solid-State Electronics},
  year = 2016,
}

@inproceedings{CTT100800923,
  author = {Y.Miyamoto and T. Kanazawa and N. Kise and H. Kinoshita and Kazuto Ohsawa},
  title = {Regrown Source / Drain in InGaAs Multi-Gate MOSFET},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100725185,
  author = {Haruki Kinoshita and Nobukazu Kise and Atsushi Yukimachi and Toru Kanazawa and Yasuyuki Miyamoto},
  title = {Operation of 16-nm InGaAs channel multi-gate MOSFETs with regrown source/drain},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100725184,
  author = {木下 治紀 and 木瀬 信和 and 祢津 誠晃 and 金澤 徹 and 宮本 恭幸},
  title = {再成長S/Dを有するInGaAsマルチゲートMOSFETのLch=16nm動作},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100740895,
  author = {木下 治紀 and 木瀬 信和 and 祢津 誠晃 and 金澤 徹 and 宮本 恭幸},
  title = {[22p-W541-5] 再成長S/Dを有するInGaAsマルチゲートMOSFETのLch=16nm動作},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100800887,
  author = {木下 治紀 and 金澤 徹 and 祢津 誠晃 and 三嶋 裕一 and 宮本 恭幸},
  title = {再成長ソース/ドレインを有するInGaAsマルチゲートMOSFET作製プロセス},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100721910,
  author = {H.Kinoshita and S.Netsu and Y.mishima and T.Kanazawa and Y.Miyamoto},
  title = {Fabrication of InGaAs channel multi-gate MOSFETs with MOVPE regrown source/drain},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693238,
  author = {木下 治紀 and 金澤 徹 and 祢津 誠晃 and 三嶋 裕一 and 宮本 恭幸},
  title = {再成長ソース/ドレインを有するInGaAsマルチゲートMOSFET作製プロセスに関する研究},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100679168,
  author = {Y. Mishima and T. Kanazawa and H. Kinoshita and E. Uehara and Y. Miyamoto},
  title = {InGaAs tri-gate MOSFETs with MOVPE regrown source/drain},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100679181,
  author = {三嶋裕一 and 金澤徹 and 木下治紀 and 上原英治 and 宮本恭幸},
  title = {再成長ソース/ドレインを有するInGaAsチャネルトライゲートMOSFET},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100679178,
  author = {金澤徹 and 三嶋裕一 and 木下治紀 and 上原英治 and 宮本恭幸},
  title = {MOVPE再成長ソース/ドレインを有するInGaAsトライゲートMOSFET},
  booktitle = {IEICE technical report},
  year = 2014,
}