@article{CTT100659663,
  author = {Tsunaki Takahashi and Shunri Oda and Ken Uchida},
  title = {Methodology for Evaluating Operation Temperatures of Fin-Type Field-Effect Transistors Connected by Interconnect Wires},
  journal = {Japanese Journal of Applied Physics},
  year = 2013,
}

@article{CTT100652829,
  author = {Tsunaki Takahashi and Nobuyasu Beppu and Kunro Chen and Shunri Oda and Ken Uchida},
  title = {Self-Heating Effects and Analog Performance Optimization of Fin-Type Field-Effect Transistors},
  journal = {Japanese Journal of Applied Physics},
  year = 2013,
}

@article{CTT100654227,
  author = {N. Kadotani and T. Ohashi and T. Takahashi and S. Oda and K. Uchida},
  title = {Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100619837,
  author = {Tomohiro Kambara and Tetsuo Kodera and Tsunaki Takahashi and Gento Yamahata and Ken Uchida and Shunri Oda},
  title = {Simulation study of charge modulation in coupled quantum dots in silicon},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100619829,
  author = {T. Takahashi and T. Kodera and S. Oda and K.  Uchida},
  title = {Experimental study on subband structures and hole transport in (110) Si p-type metal-oxide-semiconductor field-effect transistors under high magnetic field},
  journal = {Journal of Applied Physics},
  year = 2011,
}

@article{CTT100654228,
  author = {N. Kadotani and T. Takahashi and T. Ohashi and S. Oda and K. Uchida},
  title = {Electron mobility enhancement in nanoscale silicon-on-insulator diffusion layers with high doping concentration of greater than 1E18 cm-3 and silicon-on-insulator thickness of less than 10 nm},
  journal = {Journal of Applied Physics},
  year = 2011,
}

@article{CTT100624106,
  author = {高橋綱己 and 山端元音 and 小木純 and 小寺哲夫 and 小田俊理 and 内田建},
  title = {「強磁場印加による(110)pMOSFETサブバンド構造の直接的観測」},
  journal = {『応用物理学会シリコンテクノロジー分科会研究集会予稿集』},
  year = 2010,
}

@inproceedings{CTT100664443,
  author = {Aya Shindome and Tsunaki Takahashi and Shunri Oda and Ken Uchida},
  title = {Experimental Study on SET/RESET Conditions for Graphene ReRAM},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652960,
  author = {新留 彩 and 別府伸耕 and 高橋綱己 and 小田俊理 and 内田 建},
  title = {架橋・非架橋構造のグラフェン抵抗変化型メモリの書込・消去特性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652957,
  author = {高橋綱己 and 別府伸耕 and 小田俊理 and 内田建},
  title = {熱配慮設計によるFinFETアナログ特性の最適化},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100655068,
  author = {T. Ohashi and T. Takahashi and T. Kodera and S. Oda and K. Uchida},
  title = {Experimental Observation of Record-high Electron Mobility of Greater than 1100 cm2V-1s-1 in Unstressed Si MOSFETs and Its Physical Mechanisms},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100635542,
  author = {大橋輝之 and 高橋綱己 and 内田 建 and 小田俊理},
  title = {MOS 界面における変形ポテンシャルの上昇},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100635540,
  author = {高橋綱己 and 別府伸耕 and 陳 君璐 and 小田俊理 and 内田 建},
  title = {デバイスシミュレータを用いたナノスケールBulk/SOI FinFET の熱設計},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100635543,
  author = {黒澤裕也 and 角谷直哉 and 高橋綱己 and 大橋輝之 and 小田俊理 and 内田 建},
  title = {ナノ薄膜SOI における不純物のイオン化エネルギー増大},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100652987,
  author = {高橋綱己 and 別府伸耕 and 小田俊理 and 内田 建},
  title = {デバイスシミュレータを用いたナノスケールBulk/SOI FinFET熱等価回路モデルの導出},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100652973,
  author = {N. Beppu and T. Takahashi and S Oda and K. Uchida},
  title = {Experimental Study of Self-Heating Effect (SHE) in SOI MOSFETs: Accurate Understanding of Temperatures During AC Conductance Measurement, Proposals of 2ω Method and Modified Pulsed IV},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100653857,
  author = {大橋輝之 and 高橋綱己 and 小寺哲夫 and 小田俊理 and 内田 建},
  title = {ユニバーサル曲線を超えるMOSFET移動度の観測とその物理的起源の解明},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100632885,
  author = {T. Takahashi and K.Chen and N.Beppu and S. Oda and K.  Uchida},
  title = {Thermal-Aware Device Design of Nanoscale Bulk/SOI FinFETs: Suppression of Operation Temperature and Its Variability},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100632992,
  author = {T. Ohashi and T. Takahashi and N. Beppu and S. Oda and K. Uchida},
  title = {Experimental Evidence of Increased Deformation Potential at MOS Interface and its Impact on Characteristics of ETSOI FETs},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100634451,
  author = {Teruyuki Ohashi and Naotoshi Kadotani and Tsunaki Takahashi and Shunri Oda and Ken Uchida},
  title = {Mechanisms of electron mobility enhancement in junctionless SOI MOSFETs},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100634449,
  author = {Tsunaki Takahashi and Tetsuo Kodera and Shunri Oda and Ken Uchida},
  title = {Direct Observation of Subband Structures in (110) Si pMOSFETs under High Magnetic Field and Its Impact on Hole Transport},
  booktitle = {G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists},
  year = 2011,
}

@inproceedings{CTT100630242,
  author = {大橋輝之 and 高橋綱己 and 小寺哲夫 and 小田俊理 and 内田 建},
  title = {低温・強磁場環境を利用した極薄膜SOI中の変形ポテンシャルの評価},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100619840,
  author = {角谷直哉 and 高橋綱己 and 大橋輝之 and 小寺哲夫 and 小田俊理 and 内田 建},
  title = {高不純物濃度のETSOI(Extremely-Thin SOI) 拡散層における移動度とSOI 膜厚および不純物濃度の関係},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100654158,
  author = {T. Takahashi and N. Beppu and K. Chen and S. Oda and K. Uchida},
  title = {Thermal-Aware Device Design of Nanoscale Bulk/SOI FinFETs: Suppression of Operation Temperature and Its Variability},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100654159,
  author = {T. Ohashi and T. Takahashi and N. Beppu and S. Oda and K. Uchida},
  title = {Experimental Evidence of Increased Deformation Potential at MOS Interface and Its Impact on Characteristic of ETSOI FETs},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100620954,
  author = {N. Kadotani and T. Takahashi and K. Chen and T. Kodera and S. Oda and K.  Uchida},
  title = {Anomalous Electron Mobility in Extremely-Thin SOI (ETSOI) Diffusion Layers with SOI Thickness of Less Than 10 nm and High Doping Concentration of Greater Than 1×1018cm-3},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100620242,
  author = {角谷直哉 and 高橋綱己 and 小寺哲夫 and 小田俊理 and 内田 建},
  title = {pn接合の無い極薄膜SOIトランジスタの作製と電気特性評価},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100621075,
  author = {高橋綱己 and 山端元音 and 小木 純 and 小寺哲夫 and 小田俊理 and 内田 建},
  title = {強磁場印加による(110) pMOSFETサブバンド構造の直接的観測},
  booktitle = {第57回応用物理学関係連合講演会},
  year = 2010,
}

@inproceedings{CTT100599009,
  author = {T. Takahashi and G. Yamahata and J. Ogi and T. Kodera and S. Oda and K.  Uchida},
  title = {Direct Observation of Subband Structures in (110) pMOSFETs under High Magnetic Field: Impact of Energy Split Between Bands and Effective Masses on Hole Mobility},
  booktitle = {},
  year = 2009,
}