@article{CTT100653316,
  author = {Tomoyuki Miyamoto and Satoru Tanabe and Rei Nishio and Yoshitaka Kobayashi and Ryoichiro Suzuki},
  title = {InAs quantum dot growth on a thin GaNP buffer layer on GaP by metalorganic chemical vapor deposition},
  journal = {Jpn. J. Appl. Phys.},
  year = 2012,
}

@inproceedings{CTT100636329,
  author = {小林由貴 and 古川聖紘 and 田辺 悟 and 西尾 礼 and 宮本智之},
  title = {MOCVD法によるGaP基板上GaNAsP/Ga(N)P3重量子井戸の成長特性と発光評価},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100621222,
  author = {西尾礼 and 田辺悟 and 小林由貫 and 宮本智之},
  title = {MOCVD法によるGaP基板上GaNAsP/GaP量子井戸の成長と発光特性},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100621221,
  author = {小林由貴 and 田辺悟 and 西尾礼 and 宮本智之},
  title = {MOCVD法によるGaP基板上GaAsP 3重量子井戸の成長特性と発光評価},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100621219,
  author = {田辺悟 and 西尾礼 and 小林由貴 and 宮本智之},
  title = {GaP基板上へのGaInPバッファ上GaInAs量子ドット成長},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100617675,
  author = {田辺悟 and 西尾礼 and 小林由貴 and 根本幸祐 and 宮本智之},
  title = {Si基板上へのGaNP層及びInAs系量子ドット成長の検討},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100612965,
  author = {根本幸祐 and 鈴木亮一郎 and 仙石知行 and 田辺悟 and 西尾礼 and 小山二三夫 and 宮本智之},
  title = {MOCVD 成長GaInNAs バッファ上InAs/GaAs 量子ドットの水素パッシベート効果},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100617674,
  author = {田辺 悟 and 西尾礼 and 鈴木亮一郎 and 根本幸祐 and 宮本智之},
  title = {MOCVD 法によるSi 基板上及びGaP 基板上InAs 量子ドットの成長特性},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100617713,
  author = {西尾礼 and 田辺悟 and 根本幸祐 and 鈴木亮一郎 and 宮本智之},
  title = {MOCVD法によるSi基板上GaP成長における歪GaInP中間層を用いた表面ラフネスの改善},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100607509,
  author = {Satoru Tanabe and Ryoichiro Suzuki and Kosuke Nemoto and Rei Nishio and Tomoyuki Miyamoto},
  title = {InAs QDs grown on GaP buffer layer on Si substrate},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100607627,
  author = {Rei Nishio and Satoru Tanabe and Ryoichiro Suzuki and Kosuke Nemoto and Tomoyuki Miyamoto},
  title = {Reduction of surface roughness of GaP on Si substrate using strained GaInP interlayer by MOCVD},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100600542,
  author = {田辺悟 and 鈴木亮一郎 and 根本幸祐 and 西尾礼 and 宮本智之},
  title = {Si基板上GaP上へのInAs量子ドット成長},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100600541,
  author = {西尾礼 and 田辺悟 and 根本幸祐 and 鈴木亮一郎 and 宮本智之},
  title = {MOCVD法によるSi基板上GaP成長における歪GaInP中間層を用いた表面ラフネスの改善},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100597820,
  author = {田辺悟 and 鈴木亮一郎 and 仙石知行 and 根本幸祐 and 西尾礼 and 宮本智之},
  title = {MOCVD成長によるSi上GaPの表面モフォロジーの成長条件依存性},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100591594,
  author = {根本幸祐 and 鈴木亮一郎 and 仙石知行 and 田辺悟 and 西尾礼 and 小山二三夫 and 宮本智之},
  title = {MOCVD法によるGaInNAsバッファ層上InAs量子ドットの熱アニール特性},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100589452,
  author = {Ryoichiro Suzuki and Tomoyuki Miyamoto and Tomoyuki Sengoku and Kosuke Nemoto and Satoru Tanabe and Rei Nishio and Fumio Koyama},
  title = {InAs quantum dots on GaInNAs buffer layer},
  booktitle = {},
  year = 2009,
}