@article{CTT100808785,
  author = {久島康嘉 and 河合宏之 and 村尾俊幸 and 河合康典 and 岸谷都 and 鈴木亮一 and 藤田政之},
  title = {片麻痺患者のリハビリテーションに向けたFESによるペダリング運動の速度制御},
  journal = {電気学会論文誌 C},
  year = 2018,
}

@article{CTT100808782,
  author = {久島康嘉 and 河合宏之 and 村尾俊幸 and 河合康典 and 岸谷都 and 鈴木亮一 and 藤田政之},
  title = {FES-assisted Cycling with Cadence Tracking Control for Rehabilitation of Hemiparesis},
  journal = {電気学会論文誌 C},
  year = 2018,
}

@article{CTT100653316,
  author = {Tomoyuki Miyamoto and Satoru Tanabe and Rei Nishio and Yoshitaka Kobayashi and Ryoichiro Suzuki},
  title = {InAs quantum dot growth on a thin GaNP buffer layer on GaP by metalorganic chemical vapor deposition},
  journal = {Jpn. J. Appl. Phys.},
  year = 2012,
}

@article{CTT100621209,
  author = {Tomoyuki Miyamoto and Ryoichiro Suzuki and Tomoyuki Sengoku},
  title = {Multilayer InAs quantum dot with a thin spacer layer partly inserted GaNAs strain compensation layer},
  journal = {Jpn. J. Appl. Phys.},
  year = 2011,
}

@article{CTT100621182,
  author = {Tomoyuki Miyamoto and Ryoichiro Suzuki},
  title = {Post-thermal annealing effects on photoluminescence properties of InAs quantum dots on GaNAs buffer layer},
  journal = {Jpn. J. Appl. Phys.},
  year = 2011,
}

@article{CTT100585349,
  author = {Tomoyuki Sengoku and Ryoichiro Suzuki and Kosuke Nemoto and Satoru Tanabe and Fumio Koyama and Tomoyuki Miyamoto},
  title = {Photoluminescence characteristics of InAs quantum dots with GaInP cover layer grown by metalorganic chemical vapor deposition},
  journal = {Jpn. J. Appl. Phys.},
  year = 2009,
}

@article{CTT100569688,
  author = {Ryoichiro Suzuki and Tomoyuki Miyamoto and Tomoyuki Sengoku and Fumio Koyama},
  title = {High-density InAs quantum dots on GaNAs buffer layer},
  journal = {J. Crystal Growth},
  year = 2008,
}

@article{CTT100566222,
  author = {Ryoichiro Suzuki and Tomoyuki Miyamoto and Tomoyuki Sengoku and Fumio Koyama},
  title = {Reduction of spacer layer thickness of InAs quantum dots using GaNAs strain compensation layer},
  journal = {Appl. Phys. Lett.},
  year = 2008,
}

@article{CTT100547844,
  author = {Ryoichiro Suzuki and Tomoyuki Miyamoto and Fumio Koyama},
  title = {Wavelength elongation and improved emission efficiency of MOCVD-grown InAs quantum dots by GaNAs buffer layer},
  journal = {J. Crystal Growth},
  year = 2007,
}

@article{CTT100507285,
  author = {Ryoichiro Suzuki and Tomoyuki Miyamoto and Tetsuya Matsuura and Fumio Koyama},
  title = {Photoluminescence characterization of InAs quantum dots on GaNAs buffer layer by metalorganic chemical vapor deposition},
  journal = {Jpn. J. Appl. Phys.},
  year = 2006,
}

@article{CTT100507280,
  author = {Ryoichiro Suzuki and Tomoyuki Miyamoto and Tetsuya Matsuura and Fumio Koyama},
  title = {InAs quantum dot formed on GaNAs buffer layer by metalorganic chemical vapor deposition},
  journal = {Physica Status Solidi},
  year = 2006,
}

@inproceedings{CTT100612965,
  author = {根本幸祐 and 鈴木亮一郎 and 仙石知行 and 田辺悟 and 西尾礼 and 小山二三夫 and 宮本智之},
  title = {MOCVD 成長GaInNAs バッファ上InAs/GaAs 量子ドットの水素パッシベート効果},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100617713,
  author = {西尾礼 and 田辺悟 and 根本幸祐 and 鈴木亮一郎 and 宮本智之},
  title = {MOCVD法によるSi基板上GaP成長における歪GaInP中間層を用いた表面ラフネスの改善},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100617674,
  author = {田辺 悟 and 西尾礼 and 鈴木亮一郎 and 根本幸祐 and 宮本智之},
  title = {MOCVD 法によるSi 基板上及びGaP 基板上InAs 量子ドットの成長特性},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100607509,
  author = {Satoru Tanabe and Ryoichiro Suzuki and Kosuke Nemoto and Rei Nishio and Tomoyuki Miyamoto},
  title = {InAs QDs grown on GaP buffer layer on Si substrate},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100607627,
  author = {Rei Nishio and Satoru Tanabe and Ryoichiro Suzuki and Kosuke Nemoto and Tomoyuki Miyamoto},
  title = {Reduction of surface roughness of GaP on Si substrate using strained GaInP interlayer by MOCVD},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100600541,
  author = {西尾礼 and 田辺悟 and 根本幸祐 and 鈴木亮一郎 and 宮本智之},
  title = {MOCVD法によるSi基板上GaP成長における歪GaInP中間層を用いた表面ラフネスの改善},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100600542,
  author = {田辺悟 and 鈴木亮一郎 and 根本幸祐 and 西尾礼 and 宮本智之},
  title = {Si基板上GaP上へのInAs量子ドット成長},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100597820,
  author = {田辺悟 and 鈴木亮一郎 and 仙石知行 and 根本幸祐 and 西尾礼 and 宮本智之},
  title = {MOCVD成長によるSi上GaPの表面モフォロジーの成長条件依存性},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100591594,
  author = {根本幸祐 and 鈴木亮一郎 and 仙石知行 and 田辺悟 and 西尾礼 and 小山二三夫 and 宮本智之},
  title = {MOCVD法によるGaInNAsバッファ層上InAs量子ドットの熱アニール特性},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100589452,
  author = {Ryoichiro Suzuki and Tomoyuki Miyamoto and Tomoyuki Sengoku and Kosuke Nemoto and Satoru Tanabe and Rei Nishio and Fumio Koyama},
  title = {InAs quantum dots on GaInNAs buffer layer},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597823,
  author = {根本 幸祐 and 鈴木 亮一郎 and 仙石 知行 and 田辺 悟 and 小山 二三夫 and 宮本 智之},
  title = {InAs quantum dots on GaInNAs buffer layer},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597825,
  author = {田辺 悟 and 鈴木 亮一郎 and 仙石 知行 and 根本 幸祐 and 宮本 智之},
  title = {Characterization of InAs QDs on a thin GaPN buffer layer by MOCVD},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597806,
  author = {Satoru Tanabe and Ryoichiro Suzuki and Tomoyuki Sengoku and Kosuke Nemoto and Tomoyuki Miyamoto},
  title = {InAs QDs on thin GaP<small><sub>1-x</sub></small>N<small><sub>x</sub></small> buffer on GaP by MOCVD},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100661907,
  author = {Ryoichiro Suzuki and Tomoyuki Miyamoto and Tomoyuki Sengoku and Kosuke Nemoto and Satouru Tanabe and Fumio Koyama},
  title = {Photoluminescence Characteristics of MOCVD Grown-InAs Quantum Dots Covered by GaInP Laye},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100576406,
  author = {田辺 悟 and 鈴木亮一郎 and 仙石知行 and 根本幸祐 and 小山二三夫 and 宮本智之},
  title = {GaPNバッファ層を用いたGaP基板上InAs 量子ドット成長},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100576407,
  author = {仙石知行 and 宮本智之 and 鈴木亮一郎 and 根本幸祐 and 田辺 悟 and 小山二三夫},
  title = {MOCVD法によるGaInNAsバッファ層上InAs量子ドットの高密度化},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100569693,
  author = {仙石知行 and 鈴木亮一郎 and 根本幸祐 and 田辺悟 and 小山二三夫 and 宮本智之},
  title = {GaInPカバー層を用いたInAs量子ドットの発光特性},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100569697,
  author = {仙石 知行 and 宮本 智之 and 鈴木 亮一郎 and 小山 二三夫},
  title = {Multistacking of 1.4&micro;m range InAs quantum dots using GaNAs stress compensation layer},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100566596,
  author = {Ryoichiro Suzuki and Tomoyuki Miyamoto and Tomoyuki Sengoku and Fumio Koyama},
  title = {High density InAs quantum dots on GaNAs buffer layer},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100566588,
  author = {Ryoichiro Suzuki and Tomoyuki Miyamoto and Tomoyuki Sengoku and Fumio Koyama},
  title = {Multilayer 1.4μm InAs Quantum dots with thin spacer using GaNAs strain compensation layer},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100570393,
  author = {鈴木亮一郎 and 宮本智之 and 仙石知行 and 小山二三夫},
  title = {MOCVD法によるGaNAsバッファ層上InAs量子ドットの高密度化},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100547942,
  author = {鈴木亮一郎 and 宮本智之 and 小山二三夫},
  title = {GaNAs歪補償層を用いた1.4μm帯短スペーサー層InAs量子ドットの多層化},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100547873,
  author = {Ryoichiro Suzuki and Tomoyuki Miyamoto and Fumio Koyama},
  title = {Reduction of spacer layer thickness of InAs quantum dots using GaNAs strain compensation layer},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100548052,
  author = {鈴木 亮一郎 and 宮本 智之 and 小山 二三夫},
  title = {Reduction of spacer layer thickness of InAs quantum dots using GaNAs strain compensation layer},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100547864,
  author = {Ryoichiro Suzuki and Tomoyuki Miyamoto and Fumio Koyama},
  title = {Post-annealing effects on emission characteristics of InAs quantum dots on GaNAs buffer layer},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100547936,
  author = {鈴木亮一郎 and 宮本智之 and 小山二三夫},
  title = {GaNAs歪補償層を用いたInAs量子ドットのスペーサー層厚低減効果},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100507338,
  author = {鈴木亮一郎 and 宮本智之 and 小山二三夫},
  title = {GaNAsバッファ層を用いたInAs量子ドット発光の熱アニール効果},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100507336,
  author = {宮本智之 and 松浦哲也 and 鈴木亮一郎},
  title = {"N,Sbを添加したInAs系量子ドットの形成特性と光学特性"},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100507328,
  author = {Ryoichiro Suzuki and Tomoyuki Miyamoto and Tetsuya Matsuura and Fumio Koyama},
  title = {Wavelength elongation and improved emission efficiency of InAs quantum dots on GaNAs buffer layer},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100507334,
  author = {鈴木亮一郎 and 宮本智之 and 松浦哲也 and 小山二三夫},
  title = {GaNAsバッファ層を有するInAs量子ドットの偏光依存性},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100398800,
  author = {鈴木亮一郎 and 宮本智之 and 松浦哲也 and 小山二三夫},
  title = {GaNAsバッファ層上におけるInAs量子ドットの形成},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100398779,
  author = {Ryoichiro Suzuki and Tomoyuki Miyamoto and TETSUYA MATSUURA and FUMIO KOYAMA},
  title = {InAs Quantum Dot formed on GaNAs Buffer Layer by Metalorganic Chemical Vapor Deposition},
  booktitle = {},
  year = 2005,
}

@misc{CTT100569868,
  author = {Ryoichiro Suzuki and Tomoyuki Miyamoto and Tomoyuki Sengoku and Fumio Koyama},
  title = {High density InAs quantum dots on GaNAs buffer layer},
  year = 2008,
}