@inproceedings{CTT100830637,
  author = {K. Kakushima and K. Tachi and M. Adachi and K. Okamoto and S. Sato and J. Song and T. Kawanago and P. Ahmet and K. Tsutsui and N. Sugii and T. Hattori and H. Iwai},
  title = {Advantage of La2O3 Gate Dielectric Over HfO2 for Direct Contact and Mobility Improvment},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830655,
  author = {K. Kakushima and K. Okamoto and M. Adachi and K. Tachi and S. Sato and T. Kawanago and J. Song and P. Ahmet and N. Sugii and K. Tsutsui and T. Hattori and H. Iwai},
  title = {Impact of Thin La2O3 Insertion for HfO2 MOSFET},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100576380,
  author = {足立学 and 岡本晃一 and 舘喜一 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {HfO2/ La2O3積層キャパシタにおけるLa2O3層に依存した界面層成長抑制の効果},
  booktitle = {春季第55回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100576381,
  author = {岡本晃一 and 舘喜一 and 足立学 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 杉井信之 and 筒井一生 and 服部健雄 and 岩井洋},
  title = {Hf O2系 High-kゲートMOSFETの電気特性に対するLa2O3界面層挿入効果},
  booktitle = {春季第55回応用物理学会学術講演会 予稿集},
  year = 2008,
}

@inproceedings{CTT100830660,
  author = {Kuniyuki Kakushima and Kouichi Okamoto and Manabu Adachi and Kiichi Tachi and Jaeyeol Song and Soushi Sato and Takamasa Kawanago and Parhat Ahmet and Kazuo Tsutsui and Nobuyuki Sugii and Takeo Hattori and Hiroshi Iwai},
  title = {Band Bending Measurement of HfO2/SiO2/Si Capacitor with ultra-thin La2O3 Insertion by XPS},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100544401,
  author = {M.Adachi and K.Okamoto and K.Kakushima and P.Ahmet and K.Tsutsui and N.Sugii and T.Hattori and H.Iwai},
  title = {Control of Flat Band Voltage by Partial Incorporation of  La2O3  or Sc2O3 into MfO2  in Metal/MfO2/SiO2/Si MOS Capacitors},
  booktitle = {ECS Transactions:Physics and Technology of High-k Gate Dielectrics 5},
  year = 2007,
}

@inproceedings{CTT100544408,
  author = {岡本晃一 and 足立学 and 角嶋邦之 and パールハット・アヘメト and 杉井信之 and 筒井一生 and 服部健雄 and 岩井洋},
  title = {HfO2/Si 界面へのLa2O3 サブモノレイヤー添加による電気特性の変化},
  booktitle = {秋季第68回応用物理学会学術講演会予稿集},
  year = 2007,
}

@inproceedings{CTT100544407,
  author = {上村 英之 and 足立 学 and 角嶋 邦之 and パールハット アヘメト and 筒井 一生 and 杉井 信之 and 服部 健雄 and 岩井 洋},
  title = {HfO2/SiO2 界面へのSc2O3 添加によるフラットバンド電圧シフト},
  booktitle = {秋季第68回応用物理学会学術講演会予稿集},
  year = 2007,
}

@inproceedings{CTT100544405,
  author = {[320]	Koichi Okamoto and Manabu Adachi and Kuniyuki Kakushima and Parhat Ahmet and Nobuyuki Sugii and Kazuo Tsutsui and Takeo Hattori and Hiroshi Iwai},
  title = {Effective Control of Flat-band Voltage in HfO2 Gate Dielectric with La2O3 Incorporation},
  booktitle = {},
  year = 2007,
}