@article{CTT100659580,
  author = {M. Kashiwano and J. Hirai and S. Ikeda and M. Fujimatsu and Y. Miyamoto},
  title = {High Open-Circuit Voltage Gain in Vertical InGaAs Channel Metal–Insulator–Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa},
  journal = {JPN. J. APPL. PHYS.},
  year = 2013,
}

@inproceedings{CTT100659766,
  author = {柏野壮志 and 平井準 and 池田俊介 and 藤松基彦 and 宮本恭幸},
  title = {半導体ドレイン層及び狭チャネルメサ幅による縦型 InGaAs チャネル MISFET の高電圧利得化},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100659714,
  author = {M. Kashiwano and J. Hirai and S. Ikeda and M. Fujimatsu and Y. Miyamoto},
  title = {High Open Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor using Heavily Doped Drain Region and Narrow Channel Mesa},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642429,
  author = {柏野壮志 and 平井準 and 池田俊介 and 藤松基彦 and 宮本恭幸},
  title = {半導体ドレイン層及び狭チャネルメサ幅による縦型InGaAsチャネルMISFETの高電圧利得化},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642428,
  author = {柏野壮志 and 平井準 and 池田俊介 and 藤松基彦 and 宮本恭幸},
  title = {GaN HEMT のソース・ドレイン間容量のデバイスシミュレーションによる解析},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642380,
  author = {Jun Hirai and Tomoki Kususaki and Shunsuke Ikeda and YASUYUKI MIYAMOTO},
  title = {Vertical InGaAs MOSFET with HfO2 gate},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100619802,
  author = {藤松基彦 and 齋藤尚史 and 楠崎智樹 and 松本 豊 and 平井 準 and 宮本恭幸},
  title = {GaAsSb/InGaAsヘテロ接合を用いた縦型トンネルFETに関する研究},
  booktitle = {},
  year = 2011,
}