@article{CTT100642250,
  author = {Hisashi Saito and Y. Miyamoto},
  title = {Reduction of Output Conductance in Vertical InGaAs Channel Metal?Insulator?Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region},
  journal = {Applied Phys. Exp.},
  year = 2012,
}

@article{CTT100619792,
  author = {H. Saito and Y. Matsumoto and Y. Miyamoto and K. Furuya},
  title = {Vertical InGaAs Channel Metal–Insulator–Semiconductor Field Effect Transistor with High Current Density},
  journal = {Jpn. J. Appl. Phys.},
  year = 2011,
}

@article{CTT100611953,
  author = {Toru Kanazawa and kazuya wakabayashi and Hisashi Saito and Ryousuke Terao and Shunsuke Ikeda and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {Submicron InP/InGaAs Composite-Channel Metal–Oxide–Semiconductor Field-Effect Transistor with Selectively Regrown n+-Source},
  journal = {Applied Physics Express},
  year = 2010,
}

@article{CTT100610516,
  author = {H. Saito and Y. Miyamoto and K. Furuya},
  title = {Fabrication of Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor with a 15-nm-wide Mesa Structure and a Drain Current Density of 7 MA/cm2},
  journal = {Applied Phys. Exp.},
  year = 2010,
}

@article{CTT100576788,
  author = {Hisashi Saito and Yasuyuki Miyamoto and Kazuhito Furuya},
  title = {Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain},
  journal = {Applied Physics Express},
  year = 2009,
}

@inproceedings{CTT100659705,
  author = {M. Fujimatsu and H. Saito and Y. Miyamoto},
  title = {71 mV/dec of Sub-Threshold Slope in Vertical Tunnel Field-Effect Transistors with GaAsSb/InGaAs Heterostructure},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642377,
  author = {YASUYUKI MIYAMOTO and Hisashi Saito and Toru Kanazawa},
  title = {High-current-density InP ultrafine devices for high-speed operation},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100642422,
  author = {藤松基彦 and 齋藤尚史 and 宮本恭幸},
  title = {GaAsSb/InGaAsヘテロ接合を用いた縦型トンネルFETの作製・評価},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100619802,
  author = {藤松基彦 and 齋藤尚史 and 楠崎智樹 and 松本 豊 and 平井 準 and 宮本恭幸},
  title = {GaAsSb/InGaAsヘテロ接合を用いた縦型トンネルFETに関する研究},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100619803,
  author = {松本 豊 and 齋藤尚史 and 宮本恭幸},
  title = {縦型InGaAs MIS-FETのソース寄生容量の削減},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100642378,
  author = {Motohiko Fujimatsu and Hisashi Saito and YASUYUKI MIYAMOTO},
  title = {GaAsSb/InGaAs vertical tunnel FET with a 25 nm-wide channel mesa structure},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100619797,
  author = {Y. Miyamoto and H. Saito and T. Kanazawa},
  title = {Submicron-channel InGaAs MISFET with epitaxially grown source},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610522,
  author = {Y. Miyamoto and T. Kanazawa and H. Saito},
  title = {InGaAs MISFET with epitaxially grown source},
  booktitle = {InGaAs MISFET with epitaxially grown source},
  year = 2010,
}

@inproceedings{CTT100610523,
  author = {H. Saito and Y. Miyamoto and K. Furuya},
  title = {Vertical InGaAs FET with hetero-launcher and undoped channel},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610518,
  author = {T. Kanazawa and K. Wakabayashi and H. Saito and R. Terao and T. Tajima and S. Ikeda and Y. Miyamoto and K. Furuya},
  title = {Submicron InP/InGaAs composite channel MOSFETs with selectively regrown n+-source/drain buried in channel undercut},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610506,
  author = {H. Saito and Y. Miyamoto and K. Furuya},
  title = {Selective undercut etching for ultra narrow mesa structure in vertical InGaAs channel MISFET},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610493,
  author = {若林和也 and 金澤 徹 and 齋藤尚史 and 寺尾良輔 and 池田俊介 and 宮本恭幸 and 古屋一仁},
  title = {再成長ソースを有するサブミクロンInP/InGaAs nMOSFETの電流電圧特性},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610494,
  author = {寺尾良輔 and 金澤 徹 and 齋藤尚史 and 若林和也 and 池田俊介 and 宮本恭幸 and 古屋一仁},
  title = {Al2O3ゲート絶縁膜を用いたInP/InGaAsチャネル n-MOSFETの電気特},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610496,
  author = {齋藤尚史 and 楠崎智樹 and 松本 豊 and 宮本恭幸 and 古屋一仁},
  title = {縦型InGaAs チャネルMISFET の極微細メサに向けた選択的ウェットエッチング},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610505,
  author = {金澤 徹 and 若林和也 and 齋藤尚史 and 寺尾良輔 and 田島智宣 and 池田俊介 and 宮本恭幸 and 古屋一仁},
  title = {III-V族サブミクロンチャネルを有する高移動度MOSFET},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100597640,
  author = {金澤徹 and 若林和也 and 齋藤尚史 and 寺尾良輔 and 田島智宣 and 池田俊介 and 宮本恭幸 and 古屋一仁},
  title = {Al2O3ゲート絶縁膜を用いたInP/InGaAsコンポジットチャネルMOSFET},
  booktitle = {電子情報通信学会技術研究報告 電子デバイス},
  year = 2010,
}

@inproceedings{CTT100591555,
  author = {Toru Kanazawa and Hisashi Saito and Kazuya Wakabayashi and Ryousuke Terao and Tomonori Tajima and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {Fabrication of InP/InGaAs Undoped Channel MOSFET with Selectively Regrown N<sup>+</sup>-InGaAs Source Region},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100610500,
  author = {K. Wakabayashi and T. Kanazawa and H. Saito and R. Terao and S. Ikeda and Y. Miyamoto and K. Furuya},
  title = {InP/In0.53Ga0.47As composite channel n-MOSFETwith heavily dopedregrown source/drain structure},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100610499,
  author = {H. Saito and Y. Miyamoto and K. Furuya},
  title = {Fabrication of vertical InGaAs channel MISFET with heterostructure launcher and undoped channel},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100610491,
  author = {若林和也 and 金澤 徹 and 齋藤尚史 and 田島智宣 and 寺尾良輔 and 宮本恭幸 and 古屋一仁},
  title = {「再成長ソースを有するアンドープチャネルInP/InGaAs MOSFETの電流特性},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100610490,
  author = {齋藤尚史 and 楠崎智樹 and 松本 豊 and 宮本恭幸 and 古屋一仁},
  title = {ヘテロランチャと真性チャネルを有する縦型InGaAs-MISFET の高駆動能力動作},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100591554,
  author = {若林 和也 and 金澤 徹 and 齋藤 尚史 and 田島 智宣 and 寺尾 良輔 and 宮本 恭幸 and 古屋 一仁},
  title = {再成長ソースを有するアンドープチャネルInP/InGaAs MOSFETの電流特性},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100591551,
  author = {金澤徹 and 齋藤尚史 and 若林和也 and 田島智宣 and 宮本恭幸 and 古屋一仁},
  title = {MOVPE再成長n<sup>+</sup>ソースを有するⅢ-Ⅴ族高移動度チャネルMOSFET},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100610488,
  author = {楠崎智樹 and 齋藤尚史 and 松本 豊 and 宮本恭幸 and 古屋一仁},
  title = {縦型InGaAs-MISFETの試作},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100610503,
  author = {武部直明 and 山下浩明 and 高橋新之助 and 齋藤尚史 and 小林 嵩 and 宮本恭幸 and 古屋一仁},
  title = {SiO2細線埋込InP系HBTにおけるCBr4を使ったIn-situエッチング},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100598415,
  author = {YASUYUKI MIYAMOTO and Toru Kanazawa and Hisashi Saito and KAZUHITO FURUYA},
  title = {InGaAs/InP MISFET with epitaxially grown source},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100583670,
  author = {Toru Kanazawa and KAZUHITO FURUYA and YASUYUKI MIYAMOTO and Hisashi Saito and kazuya wakabayashi and Tomonori Tajima},
  title = {InP/InGaAs-channel MOSFET with MOVPE Selective Regrown Source},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100576790,
  author = {H. Saito and Y. Miyamoto and K. Furuya},
  title = {Vertical InGaAs MOSFET with Hetero-Launcher and Undoped Channel},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100576791,
  author = {齋藤尚史 and 金澤徹 and 宮本恭幸 and 古屋一仁},
  title = {ヘ テロランチャと真性チャネルを有する縦型InGaAs-MOSFETの作製},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100610501,
  author = {齋藤尚史 and 楠崎智樹 and 松本豊 and 宮本恭幸 and 古屋一仁},
  title = {ヘテロランチャと真性チャネルを有する縦型InGaAs-MOSFET},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100583674,
  author = {金澤徹 and 古屋一仁 and 宮本恭幸 and 齋藤尚史 and 若林和也 and 田島智宣},
  title = {MOVPE再成長ソースを有するIII-V族MOSFETの電流特性},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100565411,
  author = {宮本 恭幸 and 長谷川 貴史 and 齋藤 尚史 and 古屋 一仁},
  title = {RF Characteristics of Schottky-Gate-Controlled Hot Electron Transistor},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100565410,
  author = {T. Kanazawa and H. Saito and K. Wakabayashi and Y. Miyamoto and K. Furuya},
  title = {Lateral Buried Growth of N+-InGaAs Source/Drain Region to Undercut InGaAs Channel Structure for High Drive Current N-type MOSFET},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100576793,
  author = {齋藤尚史 and 孟 伶我 and 宮本 恭幸 and 古屋 一仁},
  title = {絶縁ゲート制御型ホットエレク トロントランジスタのゲート制御能力向上},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100583676,
  author = {金澤徹 and 古屋一仁 and 宮本恭幸 and 齋藤尚史 and 若林和也 and 田島智宣},
  title = {Ⅲ-Ⅴ族高駆動能力MOSFETへ向けたn<sup>+</sup>-InGaAsソース/ドレイン層の横方向埋め込み成長},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100576789,
  author = {H. Saito and Y. Miyamoto and K. FUruya},
  title = {Increment of voltage gain of InP/InGaAs Hot Electron Transistors controlled by insulated gate},
  booktitle = {Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International},
  year = 2008,
}

@inproceedings{CTT100565408,
  author = {Hisashi Saito and Takahiro Hino and Yasuyuki Miyamoto and Kazuhito Furuya},
  title = {Hot electron transistor controlled by insulated gate with 70nm-wide emitter},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100576792,
  author = {齋藤尚史 and 孟 伶我 and 宮本恭幸 and 古屋一仁},
  title = {絶縁ゲート制御型ホットエレクト ロントランジスタの電圧利得向上},
  booktitle = {},
  year = 2008,
}