@book{CTT100523351,
  author = {H. Mizuta and S. Oda and S. Uno and N. Mori and N. Koshida},
  title = {Electron Transport in Nacrystalline Silicon, Device Application of Silicon Nanocrystals and Nanostructures},
  publisher = {Springer},
  year = 2006,
}

@book{CTT100522076,
  author = {S. Huang and H. Mizuta and S. Oda},
  title = {Nanocrystalline Silicon Memory Devices; Handbook of Semiconductor Nanostructures and Nanodevices},
  publisher = {American Scientific Publishers},
  year = 2006,
}

@book{CTT100540447,
  author = {Hiroshi Mizuta and Katsuhiko Nishiguchi and Shunri Oda},
  title = {Silicon Nanoelectronics, Ballistic Transport in Silicon Nanostructures},
  publisher = {CRC Press},
  year = 2005,
}

@book{CTT100391041,
  author = {神谷利夫 and 天川修平 and 水田博},
  title = {実験化学講座２８　ナノテクノロジーの化学　単一電子デバイス},
  publisher = {丸善株式会社},
  year = 2005,
}

@book{CTT100391044,
  author = {水田　博},
  title = {ＬＳＩ技術者のための親切な電磁気学　相対性理論と量子物理学（翻訳）},
  publisher = {丸善株式会社},
  year = 2005,
}

@book{CTT100591704,
  author = {Shuhei Amakawa and K. Tsukagoshi and K. Nakazato and H. Mizuta and B. Alphenaar},
  title = {Single-electron logic based on multiple-tunnel junctions},
  publisher = {Research Signpost},
  year = 2004,
}

@book{CTT100540158,
  author = {Z.A.K. Durrani and T. Kamiya and H. Mizuta},
  title = {Electron transport in nanocrystalline silicon},
  publisher = {Transworld Research Network},
  year = 2004,
}

@book{CTT100495534,
  author = {H. Mizuta and Y. Furuta and T. Kamiya and Y. T. Tan and Z. A. K. Durrani and K. Nakazato and H. Ahmed},
  title = {“Single-electron charging phenomena in nano/polycrystalline silicon point-contact transistors (Invited Paper)”, Polycrystalline Semiconductors VII – Bulk Materials, Thin Films, and Devices, T. Sameshima, T. Fuyuki, H.P. Strunk, J.H. Werner eds., in Series ‘Solid State Phenomena’},
  publisher = {Scitech Publ., Uettikon am See, Switzerland},
  year = 2003,
}

@book{CTT100495533,
  author = {T. Kamiya and Y. Furuta and Y. -T. Tan and Z. A. K. Durrani and H. Mizuta and H. Ahmed},
  title = {Effects of oxidation and annealing temperature on grain boundary properties in polycrystalline silicon probed using nanometer-scale point-contact devices”, Polycrystalline Semiconductors VII – Bulk Materials, Thin Films, and Devices, T. Sameshima, T. Fuyuki, H.P. Strunk, J.H. Werner eds., in Series ‘Solid State Phenomena’},
  publisher = {Scitech Publ., Uettikon am See, Switzerland},
  year = 2003,
}

@book{CTT100490295,
  author = {Hiroshi Mizuta and Tomonori Tanoue},
  title = {The Physics and Applications of Resonant Tunnelling Diodes},
  publisher = {Cambridge University Press},
  year = 1995,
}

@article{CTT100820677,
  author = {Pham Xuan Thi and Masanobu Miyata and Huynh Van Ngoc and Pham Tien Lam and Nguyen Thanh Tung and Manoharan Muruganathan and Phan Trong Tue and Masashi Akabori and Dam Hieu Chi and Hiroshi Mizuta and Yuzuru Takamura and Mikio Koyano},
  title = {Thermoelectric Properties and Carrier Localization in Ultrathin Layer of Nb-Doped MoS2},
  journal = {physica status solidi B},
  year = 2018,
}

@article{CTT100607933,
  author = {X. Zhou and M. A. Rafiq and H. Mizuta and S. Oda},
  title = {Size effect on hopping conduction in silicon nanocrystals},
  journal = {AIP Conf. Proc},
  year = 2010,
}

@article{CTT100598610,
  author = {T. Nagami and Y. Tsuchiya and K. Uchida and H. Mizuta and S. Oda},
  title = {Scaling Analysis of Nanoelectromechanical Memory Devices},
  journal = {Japanese Journal of Applied Physics},
  year = 2010,
}

@article{CTT100624108,
  author = {G. Yamahata and T. Kodera and H. Mizuta and K. Uchida and S. Oda and H. Mizuta},
  title = {Control of Inter-dot Electrostatic Coupling by a Side Gate in Silicon Double Quantum Dot Operating at 4.5 K},
  journal = {Appl. Phys. Express.},
  year = 2009,
}

@article{CTT100591370,
  author = {Xin Zhou and Ken Uchida and hiroshi mizuta and SHUNRI ODA},
  title = {Electron transport in surface oxidized Si nanocrystal ensembles with thin film transistor structure},
  journal = {Journal of Applied Physics},
  year = 2009,
}

@article{CTT100591372,
  author = {Chuanbo Li and Kouichi Usami and Hiroshi Mizuta and SHUNRI ODA},
  title = {Vapor-solid-solid radial growth of Ge nanowires},
  journal = {Journal of Applied Physics},
  year = 2009,
}

@article{CTT100585613,
  author = {Chuanbo Li and Kouichi Usami and T. Muraki and H. Mizuta and K. Uchida and S. Oda},
  title = {The impacts of surface conditions on the vapor-liquid-solid growth of germanium nanowires on Si (100) substrate},
  journal = {Applied Physics Letters},
  year = 2009,
}

@article{CTT100585297,
  author = {D. Hippo and Y. Urakawa and Y. Tsuchiya and H. Mizuta and N. Koshida and S. Oda},
  title = {Spontaneous Emission Control of Silicon Nanocrystals by Silicon Three-Dimensional Photonic Crystal Structure Fabricated by Self-Aligned Two-Directional Electrochemical Etching Method},
  journal = {Materials Chemistry and Physics},
  year = 2009,
}

@article{CTT100585298,
  author = {G. Yamahata and Y. Tsuchiya and H. Mizuta and K. Uchida and S. Oda},
  title = {Electron transport through silicon serial triple quantum dots},
  journal = {Solid State Electronics},
  year = 2009,
}

@article{CTT100584674,
  author = {Benjamin Henri Jose Pruvost and K. Uchida and H. Mizuta and S. Oda},
  title = {Design optimization of NEMS switches for suspended-gate single-electron transistor applications},
  journal = {IEEE Transactions on Nanotechnology},
  year = 2009,
}

@article{CTT100584671,
  author = {C. B. Li and K. Usami and G. Yamahata and Y. Tsuchiya and H. Mizuta and S. Oda},
  title = {Position-Controllable Ge Nanowires Growth on Patterned Au Catalyst Substrate},
  journal = {Applied Physics Express},
  year = 2009,
}

@article{CTT100591383,
  author = {Tasuku Nagami and Yoshishige Tsuchiya and Shinichi Saito and Tadashi Arai and Toshikazu Shimada and hiroshi mizuta and SHUNRI ODA},
  title = {Electro-Mechanical Simulation of Switching Characteristics for Nanoelectromechanical},
  journal = {Japanese Journal of Applied Physics},
  year = 2009,
}

@article{CTT100585368,
  author = {Xin Zhou and K. Uchida and H. Mizuta and S. Oda},
  title = {Carrier transport by field enhanced thermal detrapping in Si nanocrystals thin films},
  journal = {},
  year = 2009,
}

@article{CTT100591371,
  author = {Benjamin Henri Jose Pruvost and Ken Uchida and hiroshi mizuta and SHUNRI ODA},
  title = {Design of New Logic Architectures utilizing Optimized Suspended-Gate Single-Electron Transistors},
  journal = {IEEE Transactions on Nanotechnology},
  year = 2009,
}

@article{CTT100591348,
  author = {MANOHARAN MURUGANATHAN and Yoshishige Tsuchiya and SHUNRI ODA and hiroshi mizuta},
  title = {Silicon-on-Insulator-Based Radio Frequency Single-Electron Transistors Operating at Temperatures above 4.2 K},
  journal = {Nano Letters},
  year = 2008,
}

@article{CTT100591350,
  author = {Muhammand Rafiq and Z. A. K. Durrani and hiroshi mizuta and A Colli and P Servati and A. C.  Ferrari and W. I.  Milne and SHUNRI ODA},
  title = {Field-dependant hopping conduction in silicon nanocrystal films},
  journal = {Journal of Applied Physics},
  year = 2008,
}

@article{CTT100588853,
  author = {H-J Cheong and A. Tanaka and D. Hippo and K. Usami and Y.  Tsuchiya and H. Mizuta and S. Oda},
  title = {Visible Electroluminescence from Spherical-shaped Silicon Nanocrystals},
  journal = {Japanese Journal of Applied Physics},
  year = 2008,
}

@article{CTT100586793,
  author = {D. Hippo and Y. Nakamine and K. Urakawa and Y. Kawata and Y.  Tsuchiya and H. Mizuta and N. Koshida and S. Oda},
  title = {Formation Mechanism of 100 nm-Scale Periodic-Structures in Silicon Using Magnetic-Field-Assisted Anodization},
  journal = {Japanese Journal of Applied Physics},
  year = 2008,
}

@article{CTT100566744,
  author = {Y. Kawata and Y.Tsuchiya and S.Oda and H. Mizuta},
  title = {Study of Single-Charge Polarization on a Pair of Charge Qubits Integrated Onto a Silicon Double},
  journal = {IEEE TRANSACTIONS ON NANOTECHNOLOGY},
  year = 2008,
}

@article{CTT100566750,
  author = {M. Manoharan and Shunri Oda and Hiroshi Mizuta},
  title = {Impact of channel constrictions on the formation of multiple tunnel junctions in heavily doped silicon single electron transistors},
  journal = {Applied Physics Letters},
  year = 2008,
}

@article{CTT100566776,
  author = {Saeed AKHTAR and Kouichi USAMI and Yoshishige TSUCHIYA and Hiroshi MIZUTA and Shunri ODA},
  title = {Size-Dependent Structural Characterization of Silicon Nanowires},
  journal = {Japanese Journal of Applied Physics},
  year = 2008,
}

@article{CTT100585532,
  author = {A.Tanaka and Y.Tsuchiya and kouichi usami and S Saito and T.Arai and H.Mizuta and S.Oda},
  title = {Synthesis of Assembled Nanocrystalline Si Dots Film by the Langmuir-Blodgett Technique},
  journal = {Japanese Journal of Applied Physics},
  year = 2008,
}

@article{CTT100604228,
  author = {J. Ogi and Y. Tsuchiya and H. Mizuta and S. Oda},
  title = {Single-electron tunnelling via quantum dot cavities built on a silicon suspension nanobridge},
  journal = {Microelectronics Engineering},
  year = 2008,
}

@article{CTT100566697,
  author = {M. Manoharan and Benjamin Henri Jose Pruvost and Hiroshi Mizuta and Shunri Oda},
  title = {Impact of key circuit parameters onsignal-to-noise ratio characteristics for theradio-frequency single electron transistors},
  journal = {IEEE Transactions on Nanotechnology},
  year = 2008,
}

@article{CTT100568413,
  author = {M. A. Rafiq and Z. A. K. Durrani and H. Mizuta and A Colli and P Servati and A. C.  Ferrari and W. I.  Milne and S. Oda},
  title = {Room temperature single electron charging in single silicon nanochains},
  journal = {JOURNAL OF APPLIED PHYSICS},
  year = 2008,
}

@article{CTT100566748,
  author = {M. Manoharan and Yoshishige Tsuchiya and Shunri Oda and Hiroshi Mizuta},
  title = {Stochastic Coulomb blockade in coupled asymmetric silicon dots formed by pattern-dependent oxidation},
  journal = {},
  year = 2008,
}

@article{CTT100585531,
  author = {Benjamin Henri Jose Pruvost and H. Mizuta and S. Oda},
  title = {Voltage-limitation-free analytical single-electron transistor model incorporating the effects of spin-degenerate discrete energy states},
  journal = {Journal of Applied Physics},
  year = 2008,
}

@article{CTT100566753,
  author = {M. Manoharan and Yoshiyuki Kawata and Yoshishige Tsuchiya and Shunri Oda and Hiroshi Mizuta},
  title = {Strongly coupled multiple-dot characteristics in dual recess structured silicon channel},
  journal = {Applied Physics Letters},
  year = 2008,
}

@article{CTT100591590,
  author = {Hiroshi Mizuta and Shunri Oda},
  title = {Bottom-up approach to silicon nanoelectronics},
  journal = {Microelectronics Journal},
  year = 2008,
}

@article{CTT100566752,
  author = {Yangdong ZHENG and Hiroshi MIZUTA and Shunri ODA},
  title = {Theoretical Study of Nonequilibrium Electron Transport and Charge Distribution in a Three-site Quantum Wire},
  journal = {Japanese Journal of Applied Physics},
  year = 2008,
}

@article{CTT100566745,
  author = {Saeed Akhtar and Koichi Usami and Yoshishige Tsuchiya and Hiroshi Mizuta and Shunri Oda},
  title = {Vapor–Liquid–Solid Growth of Small- and Uniform-Diameter Silicon Nanowiresat Low Temperature from Si2H6},
  journal = {},
  year = 2008,
}

@article{CTT100566743,
  author = {Yangdong Zheng and Hiroshi Mizuta and Shunri Oda},
  title = {Nonequilibrium transport properties for a three-site quantum wire model},
  journal = {physica status solidi (c)},
  year = 2008,
}

@article{CTT100566693,
  author = {Y. Kawata and M. Khalafalla and K. Usami and Y. Tsuchiya, and H. Mizuta and S. Oda},
  title = {Integration of tunnel-coupled double nanocrystalline silicon quantum dots with a multiple gate single-electron transistor Japanese},
  journal = {Journal of Applied Physics},
  year = 2007,
}

@article{CTT100542037,
  author = {Tasuku Nagami and hiroshi mizuta and N.Momo and Yoshishige Tsuchiya and S. Saito and T. Arai and T. Shimada and S. Oda},
  title = {Three-dimensional numerical analysis of switching properties of high-speed and non-volatile nanoelectromechanical memory},
  journal = {IEEE Trans. Electron Devices},
  year = 2007,
}

@article{CTT100566696,
  author = {S. Oda and S. Y. Huang and M. A. Salem and D. Hippo and H. Mizuta},
  title = {ChargeStorage and Electron/Light Emission Properties of Silicon Nanocrystals},
  journal = {Physica E},
  year = 2007,
}

@article{CTT100566692,
  author = {B. Pruvost and H. Mizuta and S. Oda},
  title = {3-D Design and Analysis of Functional NEMS-gate MOSFETs and SETs},
  journal = {IEEE Transactions on Nanotechnology},
  year = 2007,
}

@article{CTT100591365,
  author = {daihei hippo and Kei Urakawa and Yoshiyuki Kawata and Yoshishige Tsuchiya and hiroshi mizuta and Nobuyoshi Koshida and SHUNRI ODA},
  title = {New Design Concept and Fabrication Process for Three-Dimensional Silicon Photonic Crystal Structures},
  journal = {Japanese Journal of Applied Physics},
  year = 2007,
}

@article{CTT100523378,
  author = {M. Rafiq and Y. Tsuchiya and H. Mizuta and S. Oda and S. Uno and Z. Durrani and W. Milne},
  title = {Hopping conduction in size-controlled Si nanocrystals},
  journal = {J. Appl. Phys.},
  year = 2006,
}

@article{CTT100591593,
  author = {M. Khalafalla and Z. A.K. Durrani and H. Ahmed and S. Oda and H. Mizuta},
  title = {Observation of Interdot Coupling Phenomena in Nanocrystalline Silicon Point-Contact Structures},
  journal = {Current Applied Physics},
  year = 2006,
}

@article{CTT100523386,
  author = {A. Surawijaya and H. Mizuta and S. Oda},
  title = {Observation and analysis of tunneling properties of single spherical nanocrystalline silicon quantum dot},
  journal = {Jpn. J. Appl. Phys.},
  year = 2006,
}

@article{CTT100542228,
  author = {M. A. Salem and H. Mizuta S. Oda and Y. Fu and M. Willandar},
  title = {AFM current-imaging study for current density through nanocrystalline silicon dots embedded in SiO2},
  journal = {Jpn. J. Appl. Phys.},
  year = 2005,
}

@article{CTT100542229,
  author = {P. Walker and S. Uno and H. Mizuta},
  title = {Simulation study of the dependence of submicron polysilicon thin film transistor output characteristics on grain boundary position},
  journal = {Jpn. J. Appl. Phys.},
  year = 2005,
}

@article{CTT100542226,
  author = {M. Rafiq and Y. Tsuchiya and H. Mizuta and S. Oda and S. Uno and Z. Durrani and W. Milne},
  title = {Charge injection and trapping in silicon nanocrystals},
  journal = {Appl. Phys. Lett.},
  year = 2005,
}

@article{CTT100591362,
  author = {Muhammand Rafiq and Yoshishige Tsuchiya and hiroshi mizuta and SHUNRI ODA and S． Uno and Z. A. K. Durrani and W. I.  Milne},
  title = {Charge injection and trapping in silicon nanocrystals},
  journal = {Applied Physics Letters},
  year = 2005,
}

@article{CTT100542225,
  author = {S. Uno and N. Mori and K. Nakazato and N. Koshida and H. Mizuta},
  title = {Theoretical investigation of electron-phonon interaction in one-dimensional Si quantum dot array interconnected with silicon oxide layers},
  journal = {Phys. Rev. B},
  year = 2005,
}

@article{CTT100542224,
  author = {S. Uno and N. Mori and K. Nakazato and N. Koshida and H. Mizuta},
  title = {Reduction of acoustic phonon deformation potential in one-dimensional array of Si quantum dot interconnected with tunnel oxides},
  journal = {J. Appl. Phys.},
  year = 2005,
}

@article{CTT100542227,
  author = {Y. Zheng and H. Mizuta and Y. Tsuchiya and M. Endo and D. Sato and S. Oda},
  title = {In situ real-time spectroscopic ellipsometry study of HfO2 thin films grown by using the pulsed-source MOCVD},
  journal = {J. Appl. Phys.},
  year = 2005,
}

@article{CTT100592551,
  author = {H. Mizuta and Y. Furuta and T. Kamiya and Y.T. Tan and Z.A.K. Durrani and S. Amakawa and K. Nakazato and H. Ahmed},
  title = {Nanosilicon for single-electron devices},
  journal = {Current Applied Physics},
  year = 2004,
}

@article{CTT100387578,
  author = {M.A. Salem and H. Mizuta and S. Oda},
  title = {Probing electron charging in nanocrystalline Si dots using Kelvin probe force microscopy},
  journal = {Appl. Phys. Lett.},
  year = 2004,
}

@article{CTT100387580,
  author = {P. Walker. H. Mizuta and S. Uno and Y. FUruta and D. Hasko},
  title = {Improved off-current and subthreshold slope in aggressively scaled poly-Si TFTs with a single grain boundary in the channel},
  journal = {IEEE Trans. Electron Device},
  year = 2004,
}

@article{CTT100387577,
  author = {M. Khalafalla and H. Mizuta and Z.A.K. Durrani},
  title = {Coherent states in a coupled quantum dot nanocrystalline silicon transistor},
  journal = {Appl. Phys. Lett.},
  year = 2004,
}

@article{CTT100591363,
  author = {Yoshishige Tsuchiya and kouichi usami and hiroshi mizuta and SHUNRI ODA},
  title = {Formation of an Ordered Array of nc-Si Dots by Using a Solution Droplet Evaporation Method},
  journal = {MRS Proceedings: Nanoparticles and Nanowire Building Blocks-Synthesis, Processing, Characterization and Theory},
  year = 2004,
}

@article{CTT100495528,
  author = {S. Uno and K. Nakazato and S. Yamaguchi and N. Koshida and H. Mizuta},
  title = {New insights in high-energy electron emission and underlying transport physics of nanocrystalline Si},
  journal = {IEEE Trans. Nanotechnology},
  year = 2003,
}

@article{CTT100495532,
  author = {M. Ikeda and K. Nakazato and H. Mizuta and M. Green and D. Hasko and H. Ahmed},
  title = {Frequency-dependent electrical characteristics of DNA using molecular dynamics simulation},
  journal = {Nanotechnology},
  year = 2003,
}

@article{CTT100495531,
  author = {T. Kamiya and Z.A.K. Durrani and H. Ahmed and T. Sameshima and Y. Furuta and H. Mizuta and N. Lloyd},
  title = {Reduction of grain-boundary potential barrier height in polycrystalline silicon with hot H2O vapor annealing probed using point-contact devices},
  journal = {J. Vac. Sci. Technol.},
  year = 2003,
}

@article{CTT100495530,
  author = {M. Khalafallah and Z.A.K. Durrani and H. Mizuta},
  title = {Double-gate control of electronic transport in nanoscale point-contact in neo-silicon},
  journal = {IEEE Trans. Nanotechnology},
  year = 2003,
}

@article{CTT100495529,
  author = {H. Mizuta and Y. Furuta and T. Kamiya and Y.T. Tan and Z.A.K. Durrani and S. Amakawa and K. Nakazato and H. Ahmed},
  title = {Nanosilicon for single-electron devices},
  journal = {Current Applied Physics},
  year = 2003,
}

@article{CTT100495535,
  author = {G. Evans and H. Mizuta},
  title = {Negative differential conductance (NDC) in a two-island Coulomb blockade system},
  journal = {Physics of Semiconductors 2002 - Proceedings of 26th International Conference on the Physics of Semiconductors, A. R. Long and J. H. Davies eds., in Series ‘Institute of Physics Conference Series Number 171’},
  year = 2002,
}

@article{CTT100495538,
  author = {Y. Furuta and H. Mizuta and K. Nakazato and T. Kamiya and Y. T. Tan and Z. A. K. Durrani and K. Taniguchi},
  title = {Characterisation of tunnel barriers in polycrystalline silicon point-contact single-electron transistors},
  journal = {Japanese Journal of Applied Physics},
  year = 2002,
}

@article{CTT100495537,
  author = {G. Evans and H. Mizuta},
  title = {Analysis of negative differential conductance in a two-island Coulomb blockade system by a polytope approximation in phase space},
  journal = {J. Appl. Phys.},
  year = 2002,
}

@article{CTT100592552,
  author = {天川修平 and 水田 博 and K. Nakazato and H. Ahmed},
  title = {Analysis of multi-phase clocked electron pumps consisting of single-electron transistors},
  journal = {Journal of Applied Physics},
  year = 2001,
}

@article{CTT100495541,
  author = {Y. Furuta and H. Mizuta and K. Nakazato and Y. T. Tan and T. Kamiya and Z. A. K. Durrani and H. Ahmed and K. Taniguchi},
  title = {Carrier transport across few grain boundaries in highly doped polycrystalline silicon },
  journal = {Jpn. J. Appl. Phys},
  year = 2001,
}

@article{CTT100495539,
  author = {D. M. Pooley and H. Ahmed and H. Mizuta and K. Nakazato},
  title = {Single-electron charging phenomena in silicon nanopillars with and without silicon nitride tunnel barriers},
  journal = {J. Appl. Phys.},
  year = 2001,
}

@article{CTT100495549,
  author = {H. Mizuta and M. Wagner and K. Nakazato},
  title = {The role of tunnel barriers in Phase-state Low Electron-number Drive Transistors (PLEDTRs)},
  journal = {IEEE Trans. Electron Devices},
  year = 2001,
}

@article{CTT100495540,
  author = {G. Evans and H. Mizuta and H. Ahmed},
  title = {Modelling of structural and electrical characteristics of randomly doped silicon nanowires in the Coulomb-blockade regime},
  journal = {Jpn. J. Appl. Phys.},
  year = 2001,
}

@article{CTT100495544,
  author = {H.-O. Müller and D. Williams and H. Mizuta},
  title = {Design optimization of Coulomb blockade devices},
  journal = {VLSI Design },
  year = 2001,
}

@article{CTT100495542,
  author = {H. Mizuta and H. -O. Müller and K. Tsukagoshi and D. Williams and Z. Durrani and A. Irvine and S. Amakawa and G. Evans and K. Nakazato and H. Ahmed},
  title = {Nanoscale Coulomb blockade memory and logic devices (Invited Paper)},
  journal = {Nanotechnology },
  year = 2001,
}

@article{CTT100592554,
  author = {H. Mizuta and H.-O. Muller and K. Tsukagoshi and D. Williams and Z. Durrani and A. Irvine and G. Evans and S. Amakawa and K. Nakazato and H. Ahmed},
  title = {Nanoscale Coulomb blockade memory and logic devices},
  journal = {Nanotechnology},
  year = 2001,
}

@article{CTT100495546,
  author = {S. Amakawa and K. Hoh and M. Fujishima and H. Mizuta and K. Tsukagoshi},
  title = {Scaling of single-electron tunneling current through ultrasmall tunnel junction},
  journal = {J. Phys: Condens. Matter },
  year = 2000,
}

@article{CTT100495548,
  author = {H.-O. Müller and H. Mizuta},
  title = {Memory cell simulation on the nanometer scale},
  journal = {IEEE Trans. Electron Devices},
  year = 2000,
}

@article{CTT100495547,
  author = {A. Pepin and C. Vieu and H. Launois and M. Rosmeulen and M. van Rossum and H.-O. Müller and D. Williams and H. Mizuta and K. Nakazato},
  title = {Fabrication of MOS-integrated metallic single-electron memories},
  journal = {Microelectronic Engineering},
  year = 2000,
}

@article{CTT100495550,
  author = {H.-O. Müller and D. Williams and H. Mizuta and Z. A. K. Durrani},
  title = {Simulating Si multiple tunnel junctions from pinch-off to ohmic conductance},
  journal = {Materials Science and Engineering },
  year = 2000,
}

@article{CTT100495545,
  author = {H.-O. Müller and D. Williams and H. Mizuta},
  title = {Coulomb blockade and disorder in 2D quantum dot arrays},
  journal = {Jpn. J. Appl. Phys. },
  year = 2000,
}

@article{CTT100495553,
  author = {H.-O. Müller and M. Boero and J. K. Vincent and J. C. Inkson and H. Mizuta and P. A. Mulheran},
  title = {Origin of yield problems of single electron devices based on evaporated granular films},
  journal = {Appl. Phys. Lett.},
  year = 1999,
}

@article{CTT100495551,
  author = {H.-O. Müller and D. Williams and H. Mizuta and Z. A. K. Durrani and A. C. Irvine and H. Ahmed},
  title = {Simulation of Si multiple tunnel junctions},
  journal = {Physica B},
  year = 1999,
}

@article{CTT100495554,
  author = {D. M. Pooley and H. Ahmed and H. Mizuta and K. Nakazato},
  title = {Coulomb blockade in silicon nano-pillars},
  journal = {Appl. Phys. Lett.},
  year = 1999,
}

@article{CTT100495555,
  author = {K. Yamaguchi and T. Teshima and H. Mizuta},
  title = {Numerical analysis of an anomalous current assisted by locally generated deep traps in pn junctions},
  journal = {IEEE Trans. Electron Devices},
  year = 1999,
}

@article{CTT100495556,
  author = {K. Nakazato and K. Itoh and H. Mizuta and H. Ahmed},
  title = {Silicon stacked tunnel transistor for high-speed and high-density random access memory gain cell},
  journal = {Electronics Letters },
  year = 1999,
}

@article{CTT100495557,
  author = {H. Mizuta},
  title = {Three-dimensional scattering matrix simulation of resonant tunnelling via quasi-bound states in vertical quantum dots (Invited Paper)},
  journal = {Microelectronics Journal },
  year = 1999,
}

@article{CTT100495552,
  author = {K. Katayama and H. Mizuta and H.-O. Müller and D. Williams and K. Nakazato},
  title = {Design and analysis of high-speed random access memory with Coulomb blockade charge confinement},
  journal = {IEEE Trans. Electron Devices},
  year = 1999,
}

@article{CTT100495558,
  author = {H.-O. Müller and K. Katayama and H. Mizuta},
  title = {Effects of disorder on the blockade voltage of two-dimensional quantum dot arrays},
  journal = {J. Appl. Phys.},
  year = 1998,
}

@article{CTT100495559,
  author = {H. Mizuta},
  title = {Three-dimensional S-matrix simulation of single-electron resonant tunnelling through random ionised donor states},
  journal = {VLSI DESIGN },
  year = 1998,
}

@article{CTT100495561,
  author = {H. Mizuta},
  title = {Numerical study of single-electron resonant tunnelling via a few ionised donors in laterally confined resonant tunnelling diodes},
  journal = {Jpn. J. Appl. Phys.},
  year = 1996,
}

@article{CTT100495560,
  author = {P. Jansen and H. Mizuta and K. Yamaguchi},
  title = {Theoretical study of tunnelling current in the access region of various heterojunction field-effect transistor structures},
  journal = {J. Appl. Phys.},
  year = 1996,
}

@article{CTT100495563,
  author = {C. J. Goodings and H. Mizuta and J. R. A. Cleaver},
  title = {Electrical studies of charge build-up and phonon-assisted tunneling in double-barrier materials with very thick spacer layers},
  journal = {J. Appl. Phys.},
  year = 1994,
}

@article{CTT100495564,
  author = {C. J. Goodings and H. Mizuta and J. R. A. Cleaver and H. Ahmed},
  title = {Variable-area resonant tunneling diodes using implanted in-plane gates},
  journal = {J. Appl. Phys.},
  year = 1994,
}

@article{CTT100495567,
  author = {Y. Ohkura and H. Mizuta and I. Ohbu and O. Kagaya and K. Katayama and S. Ihara},
  title = {The electron mobility transition in n-GaAs heavily doped channel },
  journal = {Semicond. Sci. Technol.},
  year = 1994,
}

@article{CTT100495565,
  author = {S. Ho and A. Moriyoshi and I. Ohbu and O. Kagaya and H. Mizuta and K. Yamaguchi},
  title = {Theoretical analysis of transconductance enhancement caused by electron-concentration- dependent screening in heavily doped systems},
  journal = {IEICE Trans. Electron.},
  year = 1994,
}

@article{CTT100495566,
  author = {S. Ho and M. Oohira and O. Kagaya and A. Moriyoshi and H. Mizuta and K. Yamaguchi},
  title = {Dynamic simulation of multiple trapping processes and anomalous frequency dependence in GaAs MESFETs},
  journal = {IEICE Trans. Electron.},
  year = 1994,
}

@article{CTT100495562,
  author = {C. J. Goodings and H. Mizuta and J. R. A. Cleaver and H. Ahmed},
  title = {Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates},
  journal = {Surface Science },
  year = 1994,
}

@article{CTT100495569,
  author = {M. Wagner and H. Mizuta},
  title = {Coherent-electron intrinxic multistability in a double-barrier tunnelling diode},
  journal = {Appl. Phys. Lett.},
  year = 1993,
}

@article{CTT100495568,
  author = {M. Wagner and H. Mizuta},
  title = {Complex-energy analysis of intrinsic lifetimes of resonances in biased multiple quantum wells},
  journal = {Phys. Rev.},
  year = 1993,
}

@article{CTT100495571,
  author = {M. Wagner and H. Mizuta},
  title = {Multistable charge build-up and a new switching principle in coherent-electron tunneling devices, },
  journal = {Jpn. J Appl. Phys.},
  year = 1993,
}

@article{CTT100495570,
  author = {I. Ohbu and M. Takahama and H. Mizuta},
  title = {Time dependence of the surface Fermi level of GaAs in atomosphere},
  journal = {Appl. Phys. Lett.},
  year = 1993,
}

@article{CTT100495573,
  author = {H. Mizuta and C. J. Goodings and M. Wagner and S. Ho},
  title = {Three-dimensional numerical simulation of multi-mode quantum transport in zero-dimensional resonant tunneling diodes},
  journal = {J. Phys.: Condens. Matter },
  year = 1992,
}

@article{CTT100495572,
  author = {C. Kusano and H. Mizuta and K. Mochizuki and H. Mizuta and K. Yamaguchi},
  title = {Simulation of the effect of emitter doping on the delay time in AlGaAs/GaAs heterojunction bipolar transistors  },
  journal = {Jpn. J. Appl. Phys. },
  year = 1992,
}

@article{CTT100495575,
  author = {P. D. Rabinzohn and T. Usagawa and H. Mizuta and K. Yamaguchi},
  title = {The new two-dimensional electron gas base HBT (2DEG-HBT): Two-dimensional numerical simulation},
  journal = {IEEE Trans. on Electron Devices},
  year = 1991,
}

@article{CTT100495574,
  author = {H. Mizuta and C J. Goodings},
  title = {Transient quantum transport simulation based on the statistical density matrix},
  journal = {J. Phys.: Condens. Matter},
  year = 1991,
}

@article{CTT100495577,
  author = {K. Hiruma and M. Mori and E. Yanakura and H. Mizuta and S. Takahashi},
  title = {Improved performance of submicrometer-gate GaAs MESFET's with an Al0.3Ga0.7As buffer layer grown by metal organic vapor phase epitaxy},
  journal = {IEEE Trans. on Electron Devices},
  year = 1989,
}

@article{CTT100495576,
  author = {H. Mizuta and K. Yamaguchi and M. Yamane and T. Tanoue and S. Takahashi},
  title = {Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMT's },
  journal = {IEEE Trans. on Electron Devices},
  year = 1989,
}

@article{CTT100495580,
  author = {T. Tanoue and H. Mizuta and S. Takahashi},
  title = {A Triple-well resonant tunneling diode for multiple-valued logic application},
  journal = {IEEE Electon Device Lett.},
  year = 1988,
}

@article{CTT100495579,
  author = {H. Mizuta and T. Tanoue and S. Takahashi},
  title = {A new triple-well resonant tunneling diode with controllable double-negative resistance},
  journal = {IEEE Trans. on Electron Devices},
  year = 1988,
}

@article{CTT100495578,
  author = {C. Kusano and T. Tanoue and H. Mizuta and S. Takahashi},
  title = {Multiple-valued logic application of a triple-well resonant tunneling diode},
  journal = {IEEE Trans. on Electron Devices},
  year = 1988,
}

@article{CTT100495581,
  author = {H. Mizuta and K. Yamaguchi and S. Takahashi},
  title = {Surface Potential Effect on Gate-Drain Avalanche Breakdown in GaAs MESFET's},
  journal = {IEEE Trans. on Electron Devices},
  year = 1987,
}

@article{CTT100495583,
  author = {A. Kotani and H. Mizuta and T. Jo and J. C. Parlebas},
  title = {Theory of core photoemission spectra in CeO2},
  journal = {Solid State Commun.},
  year = 1985,
}

@article{CTT100495582,
  author = {H. Mizuta and A. Kotani},
  title = {Theory of spin-polarized Auger electrons from ferromagnetic materials},
  journal = {J. Phys. Soc. Japan},
  year = 1985,
}

@article{CTT100495584,
  author = {A. Kotani and H. Mizuta},
  title = {Theory of spin-polarized Auger electron spectra in ferromagnetic materials with particular attention to L23M23M23 Auger spectrum in Fe83B17},
  journal = {Solid State Commun. },
  year = 1984,
}

@inproceedings{CTT100802565,
  author = {楊 棒 and 金 光秀 and マレク・シュミット and 牧野 俊晴 and 加藤 宙光 and 小倉 政彦 and 竹内 大輔 and 山崎 聡 and 水田 博 and 波多野 睦子 and 岩崎 孝之},
  title = {ダイヤモンド JFET の高電界強度計測へ向けた量子センサアレイの形成},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100722236,
  author = {国崎愛子 and ムルガナタンマノハラン and 水田博 and 小田俊理 and 岩崎孝之 and 波多野睦子 and 小寺哲夫},
  title = {ダイヤモンド中の単一複合欠陥の探索に向けたスピン状態に関する第一原理計算},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100600991,
  author = {H. Mizuta and Y. Tsuchiya and S. Oda},
  title = {Hybrid Silicon Nanoelectromechanical Devices: Physics and Applications},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100599354,
  author = {Gento Yamahata and Tetsuo Kodera and Hiroshi Mizuta and Ken Uchida and Shunri Oda},
  title = {Electron transport through coupled Si quantum dots toward quantum information devices},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100601390,
  author = {T. Nagami and Y. Tsuchiya and K. Uchida and hiroshi mizuta and S. Oda},
  title = {Scaling Analysis of NEMS Memory Devices},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100600820,
  author = {H. Mizuta and M. A. G-. Ramirez and F. A. Hassani and M. A. Ghiass and Y. Tsuchiya and T. Nagami and B. Pruvost and J. Ogi and S. Sawai and S. Oda and M. Okamoto},
  title = {Multi-scale Simulation of Hybrid Silicon Nano-electromechanical (NEM) Information Devices},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100600996,
  author = {山端元音 and 小寺哲夫 and 水田 博 and 内田 建 and 小田俊理},
  title = {トップゲートとサイドゲートによるシリコン結合量子ドットの静電結合制御},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100599364,
  author = {水田 博 and 土屋良重 and 小田俊理},
  title = {ナノエレクトロメカニカル構造を有するシリコンナノ機能デバイス},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100600811,
  author = {Hiroshi Mizuta and M. A. G.-Ramirez and Y. Tsuchiya and T. Nagami and S. Oda},
  title = {NEM – MOS Co-integration for Fast & Nonvolatile Memory Applications},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585372,
  author = {Tomoyuki Kurihara and Yohei Nagahama and Daisuke Kobayshi and Hiroki Niikura and Yoshishige Tsuchiya and Hiroshi Mizuta and Hiroshi Nohira and Ken Uchida and Shunri Oda},
  title = {Engineering of Heterostructured Tunnel Barrier for Non-Volatile Memory Applications: Potential of Pr-based Heterostructured Barrier as a Tunneling Oxide},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585370,
  author = {J. Ogi and T. Ferrus and Y. Tsuchiya and K. Uchida and D. A. Williams and S. Oda and Hiroshi Mizuta},
  title = {Study of single-electron transport via suspended double silicon quantum dots},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585375,
  author = {Xin Zhou and Ken Uchida and Hiroshi Mizuta and Shunri Oda},
  title = {Lateral conduction of Si nanorystals by thin film transistor structures},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585513,
  author = {Xin Zhou and Ken Uchida and Hiroshi Mizuta and Shunri Oda},
  title = {Current oscillations observed for sparse Si nanorystal thin films},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585527,
  author = {永見 佑 and 土屋良重 and 斎藤慎一 and 新井 唯 and 嶋田壽一 and 水田 博 and 内田 建 and 小田俊理},
  title = {pn接合部でのトラップを介したトンネリングを考慮したNEMSメモリの},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585523,
  author = {山端元音 and 土屋良重 and 水田 博 and 内田 建 and 小田俊理},
  title = {シリコン量子ドットデバイスの制御性向上に関する検討},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585526,
  author = {小木 純 and Thierry Ferrus and 土屋良重 and 内田 建 and David Williams and 水田 博 and 小田俊理},
  title = {Siナノブリッジチャネルに埋め込まれた結合二重量子ドット特性観測},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100566751,
  author = {Gento. Yamahata and Ken. Uchida and Shunri. Oda and Yoshishige. Tsuchiya and Hiroshi. Mizuta},
  title = {Enhanced tunnel conductance due to QCA cotunneling processes observed for silicon serial triple quantum dots},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100566704,
  author = {Yoshiyuki Kawata and Shunri Oda and Yoshishige Tsuchiya and Hiroshi Mizuta},
  title = {Detection of Single-Charge Polarisation in SiliconDouble Quantum Dots by Using Serially-ConnectedMultiple Single-Electron Transistors},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100546859,
  author = {Y. Kawata and M. Khalafalla and K. Unami and T. Tsuchiya and S. Oda and hiroshi mizuta},
  title = {Tunnel-coupled double nanocrystalline Si quantum dots integrated into a single-electron transistor},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100523486,
  author = {M. Rafiq and H. Mizuta and S. Uno and Z. Durrani},
  title = {Fabrication of vertical nanopillar devices},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100523415,
  author = {M. Manoharan and H. Mizuta and S. Oda},
  title = {Hybrid simulation of the RF-SET and its charge sensitivity analysis},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100523406,
  author = {M. Khalafalla and H. Mizuta and S. Oda and Z. Durrani},
  title = {Observation of quantum effects in the electron transport characteristics of a nanocrystalline silicon point contact transistor},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100523457,
  author = {T. Nagami and N. Momo and Y. Tsuchiya and S. Saito and T. Arai and T. Shimada and H. Mizuta and S. Oda},
  title = {Electro-mechanical simulation of programming / readout characteristics for NEMS memory},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100523442,
  author = {N. Momo and T. Nagami and S. Matsuda and Y. Tsuchiya and S. Saito and T. Arai and Y. Kimura and T. Shimada and H. Mizuta and S. Oda},
  title = {Fabrication and characterization of nanoscale suspended floating gates for NEMS memory},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100523482,
  author = {B. Pruvost and H. Mizuta and S. Oda},
  title = {Design and analysis of functional NEMS-gate MOSFETs and SETs},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100566698,
  author = {Hea-Jeong Cheong and Daihei Hippo and Atsushi Tanaka and Kouichi Usami and Yoshishige Tsuchiya and Hiroshi Mizuta and Shunri Od},
  title = {Visible Electroluminescence from Size-Controlled Silicon Quantum Dots},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100523477,
  author = {J. Ogi and N. Momo and M. Khalafalla and Y. Tsuchiya and H. Mizuta and S. Oda},
  title = {Fabrication and evaluation of Si nanobridge transistor},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100408661,
  author = {H. Mizuta and S. Oda},
  title = {Bottom-up approach to silicon nanoelectronics},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100408664,
  author = {M.A. Rafiq and Y. Tsuchiya and H. Mizuta and S. Uno and Z.A.K. Durrani and W.I. Milne},
  title = {Temperature dependence of space charge limited current (SCLC) in thin films of silicon nanocrystals},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100408662,
  author = {S. Oda and S-Y. Huang and M. A. Salem and H. Mizuta},
  title = {Charge storage in silicon nanocrystals and device application},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100408663,
  author = {A. Surawijaya and H. Mizuta and S. Oda},
  title = {Room temperature negative differential conductance due to resonant tunneling through a single nanocrystalline-Si quantum dot},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100408665,
  author = {A. Tanaka and G.Yamahata and Y.Tsuchiya and K.Usami and H.Mizuta and S.Oda},
  title = {Formation of nanocrystalline silicon quantum dot arrays},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100408666,
  author = {H. Mizuta},
  title = {Physics and applications of silicon nanoelectromechanical information devices},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100408667,
  author = {P. Walker and H. Mizuta},
  title = {Energy-balance modeling of short channel single-GB thin film transistors},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100408668,
  author = {A. Tanaka and G.Yamahata and Y.Tsuchiya and K.Usami and H.Mizuta and S.Oda},
  title = {Assembly of Nanocrystalline Silicon Quantum Dots based on a Colloidal Solution Method},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100408678,
  author = {S. Higashijima and Y. Kurokawa and Y. Tsuchiya and M. Okamoto and H. Mizuta and S. Oda},
  title = {Ab-initio method of designing artificial quantum bits},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100599637,
  author = {Yasuyoshi Kurokawa and Satoshi Higashijima and Yoshishige Tsuchiya and Masakuni Okamoto and Hiroshi Mizuta and Shunri Oda},
  title = {Atomistic simulation of quantum transport in nanoscale silicon transistors},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100599638,
  author = {Satoshi Higashijima and Yasuyoshi Kurokawa and Yoshishige Tsuchiya and Masakuni Okamoto and Hiroshi Mizuta and Shunri Oda},
  title = {Ab-initio Method of designing artificial quantum bits},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100408680,
  author = {S. Higashijima and Y. Kurokawa and Y. Tsuchiya and M. Okamoto and H. Mizuta and S. Oda},
  title = {Atomistic simulation of quantum transport in nanoscale silicon transistors},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100599636,
  author = {Satoshi Higashijima and Yasuyoshi Kurokawa and Yoshishige Tsuchiya and Masakuni Okamoto and Hiroshi Mizuta and Shunri Oda},
  title = {Ab-Initio Calculations of Electronic States in Nano-Crystalline Si Quantum Dots},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100599635,
  author = {Yasuyoshi Kurokawa and Satoshi Higashijima and Yoshishige Tsuchiya and Masakuni Okamoto and Hiroshi Mizuta and Shunri Oda},
  title = {Electric States and Quantum Transport in Si Nanorod Transistors},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100408669,
  author = {S. Huang and H. Mizuta and S. Oda},
  title = {Charge operation of nitrided nanocrystalline silicon dot memory devices},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100408670,
  author = {S. Huang and H. Mizuta and S. Oda},
  title = {Charging-storing-discharging process in nitrided nanocrystalline silicon dots},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100546858,
  author = {G. Yamahata and A. Tanaka and Y. Kawata and Y. Tsuchiya and S. Saito and T. Arai and hiroshi mizuta},
  title = {Bottom-up fabrication of Si nanodot transistors usign the nc-Si dots solution},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100408672,
  author = {T. Nagami and N. Momo and Y. Tsuchiya and S. Saito and T. Arai and T. Shimada and H. Mizuta and S. Oda},
  title = {Mechanical property analysis and structural optimization for NEMS memory devices},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100408676,
  author = {M. Khalafalla and H. Mizuta and S. Oda and Z. A.K. Durrani},
  title = {Variation of Electrostatic Coupling and Investigation of Current Percolation Paths in Nanocrystalline Silicon Cross Transistors},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100408677,
  author = {S. Higashijima and Y. Kurokawa and Y. Tsuchiya and M. Okamoto and H. Mizuta and S. Oda},
  title = {Ab-initio calculations of electronic states in nano-crystalline Si quantum dots},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100408679,
  author = {Y. Kurokawa and S. Higashijima and Y. Tsuchiya and M. Okamoto and H. Mizuta and S. Oda},
  title = {Electronic states and quantum transport in Si nanorod transistors},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100599652,
  author = {黒川康良 and 東島賢 and 土屋良重 and 岡本政邦 and 水田博 and 小田俊理},
  title = {第一原理計算によるシリコンナノロッドの量子輸送シミュレーション},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100408673,
  author = {A. Tanaka and Y. Tsuchiya and K. Usami and H. Mizuta and S. Oda},
  title = {High-Density Assembly of Nanocrystalline Silicon Quantum Dots},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100408675,
  author = {M. Khalafalla and H. Mizuta and Z. A.K. Durrani and H. Ahmed and S. Oda},
  title = {Observation of Interdot Coupling Phenomena in Nanocrystalline Silicon Point-Contact Structure},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100408674,
  author = {M. Khalafalla and H. Mizuta and S. Oda and Z. A.K. Durrani},
  title = {Variation of Electrostatic Coupling and Investigation of Current Percolation Paths in Nanocrystalline Silicon Cross Transistors},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100599646,
  author = {黒川康良 and 東島賢 and 土屋良重 and 岡本政邦 and 水田博 and 小田俊理},
  title = {第一原理シミュレーションによるシリコンナノロッドの電子状態解析},
  booktitle = {},
  year = 2004,
}

@inproceedings{CTT100599647,
  author = {東島賢 and 黒川康良 and 土屋良重 and 岡本政邦 and 水田博 and 小田俊理},
  title = {第一原理計算(SIESTA)を用いたナノ結晶Si量子ドットの電子状態解析},
  booktitle = {},
  year = 2004,
}

@inproceedings{CTT100599649,
  author = {東島賢 and 黒川康良 and 土屋良重 and 岡本政邦 and 水田博 and 小田俊理},
  title = {Ab-initio calculations of electronic states in Si nanodots and nanorods},
  booktitle = {},
  year = 2004,
}

@misc{CTT100596344,
  author = {hiroshi mizuta},
  title = {Theoretical Study of Electron Transport in Nanometer-scale Compound Semiconductor Devices},
  year = 1993,
}

@misc{CTT100573044,
  author = {水田博 and 佐藤　大典 and 土屋良重 and 小田俊理},
  title = {不揮発性半導体記憶装置},
  howpublished = {公開特許},
  year = 2007,
  month  = {},
  note   = {特願2006-074489(2006/03/17), 特開2007-250974(2007/09/27)}
}


@misc{CTT100573120,
  author = {小田俊理 and 水田博 and 筆宝　大平 and 越田　信義},
  title = {周期構造体およびその製造方法},
  howpublished = {登録特許},
  year = 2011,
  month  = {},
  note   = {特願2005-171213(2005/06/10), 特開2006-343671(2006/12/21), 特許第4734633号(2011/05/13)}
}




@phdthesis{CTT100596344,
  author = {hiroshi mizuta},
  title = {Theoretical Study of Electron Transport in Nanometer-scale Compound Semiconductor Devices},
  school = {大阪大学},
  year = 1993,
}