@book{CTT100673613,
author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and Nobuhiko Nishiyama and Yasuyuki Miyamoto and Takuo Tanaka and Shigehisa Arai},
title = {Permeability Engineering of Semiconductor Photonic Devices},
publisher = {Nova Science Publishers},
year = 2015,
}
@book{CTT100659565,
author = {芝原 健太郎 and 宮本恭幸 and 内田 建},
title = {タウア・ニン 最新VLSIの基礎 第二版},
publisher = {丸善},
year = 2013,
}
@book{CTT100628840,
author = {宮本恭幸},
title = {グリーンナノテクノロジー―環境・エネルギー問題に挑戦する人々},
publisher = {日刊工業新聞社},
year = 2011,
}
@book{CTT100577013,
author = {宮本恭幸},
title = {電子デバイス},
publisher = {培風館},
year = 2009,
}
@book{CTT100469948,
author = {宮本恭幸},
title = {タウア・ニン 最新VLSIの基礎 (共訳)},
publisher = {丸善},
year = 2002,
}
@book{CTT100469943,
author = {YASUYUKI MIYAMOTO},
title = {Semiconductor Lasers and Photonic Integrated Circuits},
publisher = {Chapman & Hall},
year = 1994,
}
@article{CTT100887487,
author = {Y. Ito and S. Tamai and T. Hoshi and T. Gotow and Y. Miyamoto},
title = {Dependence of Process Damage on GaN Channel Thickness in AlGaN/GaN High-electron-mobility Transistors with Back-barrier Layers},
journal = {JPN. J. APPL. PHYS.},
year = 2023,
}
@article{CTT100887491,
author = {J. Kotani and K. Makiyama and T. Ohki and S. Ozaki and N. Okamoto and Y. Minoura and M. Sato and N. Nakamura and Y. Miyamoto},
title = {High-Power-Density InAlGaN/GaN HEMT using InGaN back barrier for W-band amplifiers},
journal = {ELECTRON. LETT.},
year = 2023,
}
@article{CTT100875016,
author = {宮本恭幸 and 後藤高寛},
title = {GaN HEMTでの二次元電子ガスキャリヤ濃度と ゲートドレイン間リーク電流理論計算},
journal = {電気学会論文誌C},
year = 2022,
}
@article{CTT100845762,
author = {T. Aota and A. Hayasaka and I. Makabe and S. Yoshida and T. Gotow and Y. Miyamoto},
title = {Wet etching for isolation of N-polar GaN HEMT structure by electrodeless photo-assisted electrochemical reaction},
journal = {Japanese Journal of Applied Physics},
year = 2021,
}
@article{CTT100842262,
author = {Moataz Eissa and Takuya Mitarai and Tomohiro Amemiya and Yasuyuki Miyamoto and Nobuhiko Nishiyama},
title = {Fabrication of Si photonic waveguides by electron beam lithography using improved proximity effect correction},
journal = {Japanese Journal of Applied Physics},
year = 2020,
}
@article{CTT100830305,
author = {Yasuyuki Miyamoto and Takahiro Gotow},
title = {Simulation of short channel effect in GaN HEMT with a combined thin undoped channel and semi-insulating layer},
journal = {IEICE Transactions on Electronics},
year = 2020,
}
@article{CTT100822681,
author = {K. Fukuda and N. Nogami and S. Kunisada and Y. Miyamoto},
title = {Circuit speedoriented device design scheme for GaAsSb / InGaAs double gatehetero-junction tunnel FETs},
journal = {Jpn. J. Appl. Phys.},
year = 2020,
}
@article{CTT100800921,
author = {Y. Miyamoto and T. Kanazawa and N. Kise and H. Kinoshita and K. Ohsawa},
title = {Regrown Source/Drain in InGaAs Multi-Gate MOSFETs},
journal = {J. Crystal Growth},
year = 2019,
}
@article{CTT100800916,
author = {K. Hotta and Y. Tomizuka and K. Itagaki and I. Makabe and S. Yoshida and Y. Miyamoto},
title = {Annealing temperature dependence of alloy contact for N-polar GaN HEMT structure},
journal = {Jpn. J. Appl. Phys},
year = 2019,
}
@article{CTT100800918,
author = {W Zhang and T. Kanazawa and Y. Miyamoto},
title = {Performance improvement of a p-MoS2/HfS2 van der Waals heterostructure tunnelling field-effect transistor by UV-O3 treatment},
journal = {Apl. Phys. Exp},
year = 2019,
}
@article{CTT100800893,
author = {R. Aonuma and N. Kise and Y. Miyamoto},
title = {GaAsSb/InGaAs double-gate vertical tunnel FET with a subthreshold slope of 56 mV/dec at room temperature},
journal = {Jpn. J. Appl. Phys.},
year = 2019,
}
@article{CTT100800892,
author = {W Zhang and S. Netsu and T. Kanazawa and T. Amemiya and Y. Miyamoto},
title = {Effect of increasing gate capacitance on the performance of a p-MoS2/HfS2 van der Waals heterostructure tunneling field-effect transistor},
journal = {Jpn. J. Appl. Phys},
year = 2019,
}
@article{CTT100766771,
author = {Seiko Netsu and Toru Kanazawa and Teerayut Uwanno and Tomohiro Amemiya and Kosuke Nagashio and Yasuyuki Miyamoto},
title = {Type-II HfS2/MoS2 Heterojunction Transistors},
journal = {IEICE Transactions on Electronics},
year = 2018,
}
@article{CTT100800891,
author = {S. Netsu and M. Hellenbrand and C. B. Zota and Y. Miyamoto and E. Lind},
title = {A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs},
journal = {IEEE Journal of the Electron Devices Society},
year = 2018,
}
@article{CTT100735623,
author = {Toru Kanazawa and Tomohiro Amemiya and Vikrant Upadhyaya and Atsushi Ishikawa and Kenji Tsuruta and Takuo Tanaka and Yasuyuki Miyamoto},
title = {Performance Improvement of HfS2 Transistors by Atomic Layer Deposition of HfO2},
journal = {IEEE Transactions on Nanotechnology},
year = 2017,
}
@article{CTT100741627,
author = {Vikrant UPADHYAYA and Toru KANAZAWA and Yasuyuki MIYAMOTO},
title = {Vacuum Annealing and Passivation of HfS2 FET for Mitigation of Atmospheric Degradation},
journal = {IEICE Transactions on Electronics},
year = 2017,
}
@article{CTT100738837,
author = {K. Ohsawa and S. Netsu and N. Kise and S. Noguchi and Y. Miyamoto},
title = {Dependence of electron mobility on gate voltage sweeping width and deposition temperature in MOSFETs with HfO2/Al2O3/InGaAs gate stacks},
journal = {Jpn. J. Appl. Phys.},
year = 2017,
}
@article{CTT100738834,
author = {A. Yukimachi and Y. Miyamoto},
title = {InGaAs/AlAs triple-barrier p-i-n junction diode for realizing superlattice-based FET for steep slope},
journal = {Jpn. J. Appl. Phys.},
year = 2016,
}
@article{CTT100738833,
author = {Y. Miyamoto},
title = {Recent progress in compound semiconductor electron devices (Review paper)},
journal = {IEICE Electronics Express},
year = 2016,
}
@article{CTT100735791,
author = {Nobukazu Kise and Haruki Kinoshita and Atsushi Yukimachi and Toru Kanazawa and Yasuyuki Miyamoto},
title = {Fin width dependence on gate controllability of InGaAs channel FinFETs with regrown source/drain},
journal = {Solid-State Electronics},
year = 2016,
}
@article{CTT100722080,
author = {金澤 徹 and 雨宮 智宏 and 宮本 恭幸},
title = {二次元材料HfS2を用いたMOSトランジスタ},
journal = {月刊機能材料},
year = 2016,
}
@article{CTT100916300,
author = {Wenbo Lin and Shinjiro Iwata and Koichi Fukuda and Yasuyuki Miyamoto},
title = {Scaling limit for InGaAs/GaAsSb heterojunction double-gate tunnel FETs from the viewpoint of direct band-to-band tunneling from source to drain induced off-characteristics deterioration},
journal = {Japanese Journal of Applied Physics},
year = 2016,
}
@article{CTT100738795,
author = {岩田 真次郎 and 大橋 一水 and 林 文博 and 福田 浩一 and 宮本 恭幸},
title = {GaAsSb/InGaAsダブルゲートンネルFET におけるソースおよびドレイン不純物濃度依存性},
journal = {電気学会論文誌C},
year = 2016,
}
@article{CTT100738793,
author = {宮本恭幸},
title = {III-V族チャネルを持つMOSFET (特集解説)},
journal = {電気学会論文誌C},
year = 2016,
}
@article{CTT100709138,
author = {Toru Kanazawa and Tomohiro Amemiya and Atsushi Ishikawa and Vikrant Upadhyaya and Kenji Tsuruta and Takuo Tanaka and Yasuyuki Miyamoto},
title = {Few Layer HfS2 FET},
journal = {Scientific Reports},
year = 2016,
}
@article{CTT100715509,
author = {F. A. Fatah and Y.-C. Lin and R.-X. Liu and K.-C. Yang and T.-W. Lin and H.-T. Hsu and J.-H. Yang and Y. Miyamoto and H. Iwai and C. Hu and S. Salahuddin and E. Y. Chang},
title = {A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/ In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications,},
journal = {Applied Physics Express},
year = 2016,
}
@article{CTT100715190,
author = {F. A. Fatah and Y.-C. Lin and T.-Y. Lee and K.-C. Yang and R.-X. Liu and J.-R. Chan and H.-T. Hsu and Y. Miyamoto and E. Y. Chang},
title = {Potential of Enhancement Mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for Using in High-Speed and Low-Power Logic Applications},
journal = {Solid State Sci. Technol},
year = 2015,
}
@article{CTT100693012,
author = {R Yamanaka and T. Kanazawa and E. Yagyu and Y. Miyamoto},
title = {Normally-off AlGaN/GaN high-electron-mobility transistor using digital etching technique},
journal = {Jpn. J. Appl.Phys.},
year = 2015,
}
@article{CTT100693011,
author = {K. Ohashi and M. Fujimatsu and S. Iwata and Y. Miyamoto},
title = {Body width dependence of subthreshold slope and on-current in GaAsSb/InGaAs double-gate vertical tunnel FETs},
journal = {Jpn. J. Appl.Phys.},
year = 2015,
}
@article{CTT100682922,
author = {Tomohiro Amemiya and Atsushi Ishikawa and Toru Kanazawa and JoonHyun Kang and Nobuhiko Nishiyama and Yasuyuki Miyamoto and Takuo Tanaka and Shigehisa Arai},
title = {Permeability-controlled Optical Modulator with Tri-gate Metamaterial: Control of Permeability on InP-based Photonic Integration Platform},
journal = {Scientific Reports},
year = 2015,
}
@article{CTT100678925,
author = {K. Ohsawa and A. Kato and T. Kanazawa and E. Uehara and Y. Miyamoto},
title = {Channel thickness dependence on InGaAs MOSFET with InP source for high current density},
journal = {IEICE Electronics Express},
year = 2014,
}
@article{CTT100676855,
author = {Y. Atsumi and N. Taksatorn and N. Nishiyama and Y. Miyamoto and S. Arai},
title = {Loss reduction of Si optical waveguides by beam step-size fracturing technique in electron beam lithography},
journal = {Japanese Journal of Applied Physics},
year = 2014,
}
@article{CTT100678923,
author = {M. Yamada and K. Uchida and Y. Miyamoto},
title = {Delay time component of InGaAs MOSFET caused by dynamic source resistance},
journal = {IEICE Trans. Electron},
year = 2014,
}
@article{CTT100659580,
author = {M. Kashiwano and J. Hirai and S. Ikeda and M. Fujimatsu and Y. Miyamoto},
title = {High Open-Circuit Voltage Gain in Vertical InGaAs Channel Metal–Insulator–Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa},
journal = {JPN. J. APPL. PHYS.},
year = 2013,
}
@article{CTT100659581,
author = {K. Hayashi and Y. Yamaguchi and T. Oishi and H. Ostuka and K. Yamanaka and M. Nakayama and Y. Miyamoto},
title = {Mechanism Study of Gate Leakage Current for AlGaN/GaN HEMT Structure Under High Reverse Bias by TSB Model and TCAD Simulation},
journal = {JPN. J. APPL. PHYS.},
year = 2013,
}
@article{CTT100659702,
author = {上澤岳史 and 宮本恭幸},
title = {縦型 ゲート制御ホットエレクトロントランジスタの新しい遮断周波数算出方法},
journal = {電子情報通信学会論文誌},
year = 2013,
}
@article{CTT100659703,
author = {林 一夫 and 大石 敏之 and 加茂 宣卓 and 山口 裕太郎 and 大塚 浩志 and 山中 宏治 and 中山 正敏 and 宮本 恭幸},
title = {AlGaN/GaN HEMTにおけるドレーン漏れ電流の解析},
journal = {電子情報通信学会論文誌. C, エレクトロニクス},
year = 2013,
}
@article{CTT100659578,
author = {C.-H. Yu and H.-T. Hsu and C.-Y. Chiang and C.-I Kuo and Y. Miyamoto and E. Y. Chang},
title = {Performance Evaluation of InGaSb/AlSb P-Channel High-Hole-Mobility Transistor Faricated Using BCl3 Dry Etching},
journal = {JPN. J. APPL. PHYS.},
year = 2013,
}
@article{CTT100659579,
author = {E. Y. Chang and C.-I Kuo and H.-T. Hsu and C.-Y. Chiang and Y. Miyamoto},
title = {InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications},
journal = {Appl. Phys. Exp.},
year = 2013,
}
@article{CTT100642251,
author = {Atsushi Kato and Toru Kanazawa and Shunsuke Ikeda and Yosiharu Yonai and Yasuyuki Miyamoto},
title = {Reduction of access resistance of InP/InGaAs composite-channel MOSFET with back source electrode},
journal = {IEICE Trans. Electron.},
year = 2012,
}
@article{CTT100642252,
author = {Naoaki Takebe and Y. Miyamoto},
title = {Reduction of base-collector capacitance in InP/InGaAs DHBT with buried SiO2 wires},
journal = {IEICE Trans. Electron.},
year = 2012,
}
@article{CTT100642250,
author = {Hisashi Saito and Y. Miyamoto},
title = {Reduction of Output Conductance in Vertical InGaAs Channel Metal?Insulator?Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region},
journal = {Applied Phys. Exp.},
year = 2012,
}
@article{CTT100659577,
author = {F. Fatah and C.-I Kuo and H.-T. Hsu and C.-Y. Chiang and C.-Y. Hsu and Y. Miyamoto and E. Y. Chang},
title = {Bias-Dependent Radio Frequency Performance for 40 nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz},
journal = {JPN. J. APPL. PHYS.},
year = 2012,
}
@article{CTT100628828,
author = {N. Takebe and T. Kobayashi and H. Suzuki and Y. Miyamoto and K. Furuya},
title = {Fabrication of InP/InGaAs DHBTs with buried SiO2 wires},
journal = {IEICE Trans. Electron.},
year = 2011,
}
@article{CTT100619794,
author = {M. Yamada and T. Uesawa and Y. Miyamoto and K. Furuya},
title = {Deviation from Proportional Relationship between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operating at High Current Density},
journal = {IEEE Electron Device Lett.},
year = 2011,
}
@article{CTT100628822,
author = {R. Terao and T. Kanazawa and S. Ikeda and Y. Yonai and A. Kato and Y. Miyamoto},
title = {InP/InGaAs Composite MOSFETs with Regrown Source and Al2O3 gate dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/μm},
journal = {Applied Phys. Exp.},
year = 2011,
}
@article{CTT100619792,
author = {H. Saito and Y. Matsumoto and Y. Miyamoto and K. Furuya},
title = {Vertical InGaAs Channel Metal–Insulator–Semiconductor Field Effect Transistor with High Current Density},
journal = {Jpn. J. Appl. Phys.},
year = 2011,
}
@article{CTT100790952,
author = {Wang and C.-T. and Kuo and C.-I. and Hsu and H.-T. and Chang, E.Y. and Hsu and L.-H. and Lim and W.-C. and YASUYUKI MIYAMOTO},
title = {Flip-chip packaging of low-noise metamorphic high electron mobility transistors on low-cost organic substrate},
journal = {Japanese Journal of Applied Physics},
year = 2011,
}
@article{CTT100611953,
author = {Toru Kanazawa and kazuya wakabayashi and Hisashi Saito and Ryousuke Terao and Shunsuke Ikeda and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
title = {Submicron InP/InGaAs Composite-Channel Metal–Oxide–Semiconductor Field-Effect Transistor with Selectively Regrown n+-Source},
journal = {Applied Physics Express},
year = 2010,
}
@article{CTT100610516,
author = {H. Saito and Y. Miyamoto and K. Furuya},
title = {Fabrication of Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor with a 15-nm-wide Mesa Structure and a Drain Current Density of 7 MA/cm2},
journal = {Applied Phys. Exp.},
year = 2010,
}
@article{CTT100610508,
author = {C-I. Kuo and H-T. Hsu and Y-L. Chen and C-Y. Wu and E. Y. Chang and Y. Miyamoto and W-C. Tsern and K. C. Sahoo},
title = {RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (InxGa1 - xAs)m/(InAs)n Superlattice-Channel Structure for Millimeter-Wave Applications},
journal = {IEEE Electron Device Letters},
year = 2010,
}
@article{CTT100610507,
author = {Y. Miyamoto and S. Takahashi and T. Kobayashi and Hiroyuki Suzuki and K. Furuya},
title = {Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector},
journal = {IEICE Trans. Electron.},
year = 2010,
}
@article{CTT100601396,
author = {Chia-Ta Chang and Heng-Tung Hsu and Edward Yi Chang and Chien-I Kuo and Jui-Chien Huang and Chung-Yu Lu and Yasuyuki Miyamoto},
title = {30-GHz Low-Noise Performance of 100-nm-Gate-Recessed n-GaN/AlGaN/GaN HEMTs},
journal = {IEEE Electron Device Letters},
year = 2010,
}
@article{CTT100600644,
author = {Takafumi Uesawa and Masayuki Yamada and Yasuyuki Miyamoto and Kazuhito Furuya},
title = {Monte Carlo Analysis of Base Transit Times of InP/GaInAs Heterojunction Bipolar Transistors with Ultrathin Graded Bases},
journal = {Japanese Journal of Applied Physics},
year = 2010,
}
@article{CTT100790868,
author = {Kuo and C.-I. and Hsu and H.-T. and Chang, E.Y. and YASUYUKI MIYAMOTO and Wu and C.-Y. and Chen and Y.-L. and Hsiao and Y.-L.},
title = {DC and RF performance improvement of 70nm quantum well field effect transistor by narrowing source - drain spacing technology},
journal = {Japanese Journal of Applied Physics},
year = 2010,
}
@article{CTT100598425,
author = {Chia-Yuan Chang and Heng-Tung Hsu and Edward Yi Chang and Hai-Dang Trinh and Yasuyuki Miyamoto},
title = {InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric},
journal = {Electrochemical and Solid-State Letters,},
year = 2009,
}
@article{CTT100576961,
author = {Chia-Yuan Chang and Heng-Tung Hsu and Edward Yi Chang and YASUYUKI MIYAMOTO},
title = {InAs-Channel High-Electron-Mobility Transistors for Ultralow-Power Low Noise Amplifier Applications},
journal = {Japanese Journal of Applied Physics},
year = 2009,
}
@article{CTT100576788,
author = {Hisashi Saito and Yasuyuki Miyamoto and Kazuhito Furuya},
title = {Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain},
journal = {Applied Physics Express},
year = 2009,
}
@article{CTT100598413,
author = {So Nishimura and KAZUHITO FURUYA and YASUYUKI MIYAMOTO},
title = {Design and Simulation of Hot-Electron Diffraction Oservation by Scanning Probe – Quantitative Evaluation of Observation Possibility –},
journal = {Jpn. J. Appl.Phys.},
year = 2008,
}
@article{CTT100598411,
author = {So Nishimura and KAZUHITO FURUYA and YASUYUKI MIYAMOTO},
title = {Design and Simulation of Hot-Electron Diffraction Oservation by Scanning Probe – Quantitative Evaluation of Observation Possibility –},
journal = {Jap. J. Appl. Phys.},
year = 2008,
}
@article{CTT100565405,
author = {Chien-I KUO and Heng-Tung HSU and Edward Yi CHANG and Yasuyuki MIYAMOTO and Wen-Chung TSERN},
title = {InAs High Electron Mobility Transistors with Buried Gate for Ultralow-Power-Consumption Low-Noise Amplifier Application},
journal = {Japanese Journal of Applied Physics},
year = 2008,
}
@article{CTT100554640,
author = {Chien-I Kuo and Heng-Tung Hsu and Edward Yi Chang and Chia-Yuan Chang and Yasuyuki Miyamoto and Suman Datta and Marko Radosavljevic and Guo-Wei Huang and Ching Ting Lee},
title = {RF and Logic Performance Improvement of In0.7Ga0.3As/InAs/In0.7Ga0.3As composite channel HEMTs Using Gate-Sinking Technology},
journal = {IEEE Electron Device Lett.},
year = 2008,
}
@article{CTT100549485,
author = {Mitsuhiko Igarashi and KAZUHITO FURUYA and YASUYUKI MIYAMOTO},
title = {Cutoff Frequency Characteristics of Gate-Control Hot Electron Transistors by Monte Carlo Simulation},
journal = {Physica Status Solidi(C)},
year = 2008,
}
@article{CTT100549484,
author = {Chia-Yuan Chang and Heng-Tung Hsu and Edward Yi Chang and Chien-I Kuo and Suman Datta and Marko Radosavljevic and YASUYUKI MIYAMOTO and Guo-Wei Huang},
title = {Investigation of Impact Ionization in InAs-Channel HEMT for High-Speed and Low-Power Applications},
journal = {IEEE Electron Dev. Lett.},
year = 2007,
}
@article{CTT100549483,
author = {Kazuya Nishihori and Yasuyuki Miyamoto},
title = {Numerical Analysis of the Effect of P-Regions on the I-V Kink in GaAs MESFETs},
journal = {Trans. IECE of Japan},
year = 2007,
}
@article{CTT100534004,
author = {Chia-Yuan Chang and Edward Yi Chang and Yi-Chung Lien and Yasuyuki Miyamoto and Chien-I Kuo and Sze-Hung Chang and Li-Hsin Chu},
title = {High-PerformanceIn0.52Al0.48As/In0.6Ga0.4As Power Metamorphic High Electron Mobility Transistor for Ka-Band Applications},
journal = {Jpn. J. Appl. Phys.},
year = 2007,
}
@article{CTT100534002,
author = {Y. Miyamoto and M. Ishida and T. Yamamoto and T. Miura and K. Furuya},
title = {InP buried growth of SiO2 wires toward reduction of collector capacitance in HBT},
journal = {J. Cryst, Growth},
year = 2007,
}
@article{CTT100534003,
author = {A. Suwa and I. Kashima and Y. Miyamoto and K. Furuya},
title = {Increase of collector current in hot electron transistors controlled by gate bias},
journal = {Jpn. J. Appl. Phys.,},
year = 2007,
}
@article{CTT100522204,
author = {Nobuya Machida and Yasuyuki Miyamoto and Kazuhito Furuya},
title = {Charging Time of Double-Layer Emitter in Heterojunction Bipolar Transistor Based on Transmission Formalism},
journal = { Jpn. J. Appl. Phys.},
year = 2006,
}
@article{CTT100534001,
author = {K Furuya and N Machida and M Igarashi and R Nakagawa and I Kashima and M Ishida and Y Miyamoto},
title = {MC simulation of ultrafast transistor using ballistic electron in intrinsic semiconductor and its fabrication feasibility},
journal = {J. Physics: Conference Series},
year = 2006,
}
@article{CTT100391816,
author = {Kazuhito Furuya and Yasunori Ninomiya and Nobuya Machida and Yasuyuki Miyamoto},
title = {Double-Slit Interference Observation of Hot Electrons in Semiconductors -- Analysis of Experimental Data --},
journal = {Jpn. J. Appl. Phys.},
year = 2005,
}
@article{CTT100522205,
author = {K. Goto and T. Kirigaya and Y. Masuda and Y.-J. Kim and Y. Miyamoto and S. Arai},
title = {Design and Experiments of a Near-Field Optical Disk Head for Very High Efficiency},
journal = {The Journal of Scanning Microscopies},
year = 2004,
}
@article{CTT100499933,
author = {Masaki Yoshizawa and Shigeru Moriya and Hiroyuki Nakano and Yuichi Shirai and Tatsuo Morita and Tetsuya Kitagawa and Yasuyuki Miyamoto},
title = {Impact of Latent Image Quality on Line Edge Roughness in Electron Beam Lithography},
journal = {Jpn. J. Appl. Phys. },
year = 2004,
}
@article{CTT100499945,
author = {Y. Miyamoto and Y. Shirai and M. Yoshizawa and K. Furuya},
title = {20 nm Periodical Pattern by Calixarene Resists: Comparison of CMC[4]AOMe with MC[6]AOAc},
journal = { 2004 International Microprocesses and Nanotechnology Conference},
year = 2004,
}
@article{CTT100499931,
author = {Katsuhiko Takeuchi and Hiroshi Maeda and Ryo Nakagawa and Yasuyuki Miyamoto and Kazuhito Furuya},
title = {InP hot-electron transistors with emitter mesa fabricated between gate electrodes for reduction in emitter-gate gate-leakage current},
journal = {Jpn. J. Appl. Phys.},
year = 2004,
}
@article{CTT100499932,
author = {YASUYUKI MIYAMOTO},
title = {Observation of current modulation through self-assembled monolayer molecule in transistor structure},
journal = {Jpn. J. Appl. Phys.},
year = 2004,
}
@article{CTT100499943,
author = {K. Goto and T. Kirigaya and Y. Masuda and Y.-J. Kim and Y. Miyamoto and S. Arai },
title = {Design and Experiments of a Near-Field Optical Disk Head for Very High Efficiency},
journal = {The Journal of Scanning Microscopies},
year = 2004,
}
@article{CTT100499940,
author = {Masaki Yoshizawa and Yasuyuki Miyamoto and Hiroyuki Nakano and Tetsuya Kitagawa and Shigeru Moriya},
title = {Challenges to ultra-thin resist process for LEEPL},
journal = {J. Photopolymer Sci. Technol.},
year = 2004,
}
@article{CTT100499936,
author = {R.Nakagawa and K.Takeuchi and Y.Yamada and Y.Miyamoto and K.Furuya},
title = {InP Hot Electron Transistors with Reduced Emitter Width for Controllability of Collector Current by Gate Bias},
journal = {International Conference on Indium Phosphide and Related Material},
year = 2004,
}
@article{CTT100491645,
author = {K. Furuya and Y. Ninomiya and Y. Miyamoto},
title = {Young's Double-Slit Interference Experiment of Hot Electron in Semiconductors},
journal = {The 13th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors},
year = 2003,
}
@article{CTT100499930,
author = {Yasuyuki Miyamoto and Ren Yamamoto and Hiroshi Maeda and Katsuhiko Takeuchi and Nobuya Machida and Lars-Erik Wernersson and Kazuhito Furuya},
title = {InP Hot Electron Transistors with a Buried Metal Gate},
journal = {Jpn. J. Appl. Phys.},
year = 2003,
}
@article{CTT100491659,
author = {Tsuyoshi Tanaka and Kohichi Tokudome and Yasuyuki Miyamoto},
title = {Effects of Low-Oxygen-Content Metalorganic Precursors on AlInAs and High Electron Mobility Transistor Structures with the Thick AlInAs Buffer Layer},
journal = {Jpn. J. Appl. Phys.},
year = 2003,
}
@article{CTT100491658,
author = {Y. Miyamoto and Y. Tohmori},
title = {Activities of Indium Phosphide in Japan},
journal = {GaAs Mantech},
year = 2003,
}
@article{CTT100491653,
author = {田中剛 and 徳留功一 and 宮本恭幸},
title = {低酸素MOVPE材料を用いたAlInAs,InPとAlInAs/InP HEMT構造の成長},
journal = {第50回応用物理学会関係連合講演会},
year = 2003,
}
@article{CTT100491649,
author = {Y. Miyamoto and K. Sasao and Y. Azuma and N. Kaneda and Y. Majima},
title = {Small Au/SAM/Au junctions by EB lithography},
journal = {Photonic West},
year = 2003,
}
@article{CTT100491648,
author = {K.Yokoyama and Y.Miyamoto and T.Morita and T.Arai and K.Matsuda and K.Furuya},
title = {Wet etching for self-aligned 0.1-um-wide emitter in InP/InGaAs HBT},
journal = {Topical Workshop on Heterostructure Microelectronics},
year = 2003,
}
@article{CTT100491647,
author = {K. Sasao and Y. Azuma and N. Kaneda and E. Hase and Y. Miyamoto and Y. Majima},
title = {Observation of current modulation in SAM-FET fabricated by an air-bridge structure},
journal = {The 2003 International Conference on Solid State Devices and Materials},
year = 2003,
}
@article{CTT100491646,
author = {K. Takeuchi and H. Maeda and R. Makagawa and Y. Miyamoto and K. Furuya},
title = {InP hot electron transistors using modulation of gate electrodes},
journal = {The 2003 International Conference on Solid State Devices and Materials},
year = 2003,
}
@article{CTT100491644,
author = {M. Yoshizawa and S. Moriya and H. Nakano and T. Morita and T. Kitagawa and Y. Miyamoto},
title = {The Impact of Latent Image Quality on Line Edge Roughness in Electron Beam Lithography},
journal = {2003 International Microprocesses and Nanotechnology Conference},
year = 2003,
}
@article{CTT100499928,
author = {Keigo Yokoyama and Koji Matuda and Toshihiro Nonaka and Yasuyuki Miyamoto and Kazuhito Furuya},
title = {Fabrication of GaInAs/InP heterojunction bipolar transistors with a single tungsten wire as collector electrode},
journal = { Jpn. J. Appl. Phys.},
year = 2003,
}
@article{CTT100477627,
author = {二宮泰徳 and 中村弘道 and 宮本恭幸 and 町田信也 and 古屋一仁},
title = {GaInAs/InPダブルスリットを通過したホットエレクトロンの電流変調},
journal = {第49回応用物理学会関係連合講演会},
year = 2002,
}
@article{CTT100477626,
author = {真島豊 and 笹尾和樹 and 東康男 and 宮本恭幸},
title = {金属/SAM/金属構造素子の試作と電流-電圧特性},
journal = {第63回応用物理学会学術講演会},
year = 2002,
}
@article{CTT100477624,
author = {田中剛 and 徳留功一 and 宮本恭幸},
title = {低酸素MOCVD材料を用いたAlInAsとAlInAs/InP HEMT構造の成長},
journal = {第63回応用物理学会学術講演会},
year = 2002,
}
@article{CTT100477623,
author = {前田寛 and 山本練 and 竹内克彦 and 宮本恭幸 and 古屋一仁},
title = {ノンドープInP中の埋込金属周期電極構造を用いたホットエレクトロントランジスタ},
journal = {第63回応用物理学会学術講演会},
year = 2002,
}
@article{CTT100477622,
author = {Y. Miyamoto and H. Nakamura and Y. Ninomiya and H. Oguchi and N. Machida and K. Furuya },
title = {Current modulation in fine electrode by hot electron passing through GaInAs/InP double slits},
journal = {International Conference on Indium Phosphide and Related Materials},
year = 2002,
}
@article{CTT100477631,
author = {Y. Miyamoto and T. Arai and S. Yamagami and K. Matsuda and K. Furuya},
title = {Evaluation of base-collector capacitance in submicron buried metal heterojunction bipolar transistors },
journal = {The 2002 International Conference on Solid State Devices and Materials},
year = 2002,
}
@article{CTT100469854,
author = {T. Morita and T. Arai and H. Nagatsuka and Y. Miyamoto and K. Furuya},
title = {Fabrication of InP/GaInAs Double Heterojunction Bipolar Transistors with 0.1-um-Wide Emitter},
journal = { Jpn. J. Appl. Phys.},
year = 2002,
}
@article{CTT100469848,
author = {宮本恭幸 and 古屋一仁},
title = {InP系ヘテロ接合バイポーラトランジスタの高速化技術},
journal = {応用物理},
year = 2002,
}
@article{CTT100477629,
author = {Y. Miyamoto and R. Yamamoto and H. Maeda and K. Takeuchi and L.-E. Wernersson, K and Furuya},
title = {InP Hot Electron Transistor with a Buried Metallic Gate for Electron Emission},
journal = {60th Annual Device Research Conference},
year = 2002,
}
@article{CTT100477647,
author = {K. Takeuchi and R. Yamamoto and H. Maeda and Y. Miyamoto and K. Furuya},
title = {Freestanding tungten wires for BM-HET },
journal = {2002 International Microprocesses and Nanotechnology Conference},
year = 2002,
}
@article{CTT100477649,
author = {Y. Majima and K. Sasao and Y. Azuma and Y. Miyamoto},
title = {Fabrication and I-V characteristics of metal/SAM/metal devices},
journal = {2002 International Microprocesses and Nanotechnology Conference},
year = 2002,
}
@article{CTT100451464,
author = {T. Arai and S. Yamagami and Y. Miyamoto and KAZUHITO FURUYA},
title = {Reduction of Base-Collector Capacitance in Submicron InP/GaInAs Heterojunction Bipolar Transistors with Buried Tungsten Wires},
journal = {Jpn. J. Appl. Phys.},
year = 2001,
}
@article{CTT100506683,
author = {Y.Miyamoto and H.Oguchi and H.Nakamura and Y.Ninomiya and K.Furuya},
title = {Isolation of 80 nm periodical Au/Ti/n-GaInAs ohmic contacts},
journal = { 20th Electronic Materials Symposium},
year = 2001,
}
@article{CTT100453713,
author = {森田竜夫 and 新井俊希 and 長塚弘美 and 宮本恭幸 and 古屋一仁},
title = {0.1μｍ幅エミッタを有するInP/GaInAs系DHBTの作製},
journal = {第62回応用物理学会学術講演会},
year = 2001,
}
@article{CTT100451470,
author = {前堅一 and 柄沢伸也 and 宮本恭幸 and 古屋一仁},
title = {GaAs/AlAs/InGaPショットキーコンタクト構造真空エミッタ},
journal = {第62回応用物理学会学術講演会},
year = 2001,
}
@article{CTT100506680,
author = {Y. Miyamoto and M. Kurita and K. Furuya},
title = {GaInAs/AlAs/InP hot electron vacuum emitter},
journal = { 1st International Workshop on Quantum Nonplaner Nanostructures & Nanoelectronics},
year = 2001,
}
@article{CTT100451469,
author = {新井俊希 and 山上滋春 and 酒井隆史 and 宮本恭幸 and 古屋一仁},
title = {BM-HBT高速化のためのコレクタ抵抗の低減},
journal = {第48回応用物理学会関係連合講演会},
year = 2001,
}
@article{CTT100506681,
author = {Y. Miyamoto and H. Oguchi and H. Nakamura and Y. Ninomiya and K. Furuya},
title = {80 nm periodical ohmic contacts toward Young's double slit experiment using a semiconductor},
journal = { 1st International Workshop on Quantum Nonplaner Nanostructures & Nanoelectronics},
year = 2001,
}
@article{CTT100451468,
author = {山本練 and 宮本恭幸 and 古屋一仁 and E. リンド and I.ピッツンカ and Ｌ.バナソン and L.サミュエルソン},
title = {ノンドープGaAs中の埋込み金属電極によるホットエレクトロン電流変調},
journal = {第48回応用物理学会関係連合講演会},
year = 2001,
}
@article{CTT100451467,
author = {T. Arai and T. Morita and H.Nagatsuka and Y. Miyamoto and K. Furuya},
title = {Fabrication of InP DHBTs with 0.1μm Wide Emitter},
journal = { 59th Annual Device Research Conference},
year = 2001,
}
@article{CTT100451466,
author = {T. Arai and S. Yamagami and Y. Miyamoto and K. Furuya},
title = {Submicron Buried Metal Heterojuunction Bipolar Transistors},
journal = { International Conference on Indium Phosphide and Related Materials},
year = 2001,
}
@article{CTT100451465,
author = {T. Arai and S. Yamagami and Y. Okuda and Y. Harada and Y. Miyamoto and K. Furuya},
title = {InP DHBT with 0.5 um wide emitter along <010> direction toward BM-HBT with narrow emitter},
journal = { Trans. IECE of Japan},
year = 2001,
}
@article{CTT100453712,
author = {新井俊希 and 山上滋春 and 酒井隆史 and 宮本恭幸 and 古屋一仁},
title = {EB露光による微細金属埋込みHBTの作製},
journal = {第62回応用物理学会学術講演会},
year = 2001,
}
@article{CTT100506682,
author = {L.-E. Wernersson and R. Yamamoto and E. Lind and I. Pietzonka and W. Seifert and Y. Miyamoto and K. Furuya and L. Samuelson},
title = {Attractive Potential around a Buried Metallic Gate in a Schottky Collector Hot Electron Transistor},
journal = { 28th International Symposium on Compound Semiconductors},
year = 2001,
}
@article{CTT100453711,
author = {中村弘道 and 小口博嗣 and 二宮泰徳 and 宮本恭幸 and 古屋一仁},
title = {80nm周期Au/Ti/n-GaInAs オーミック電極のアイソレーション},
journal = {第62回応用物理学会学術講演会},
year = 2001,
}
@article{CTT100434645,
author = {T. Arai and H. Tobita and Y. Harada and M. Suhara and Y. Miyamoto and K. Furuya},
title = {Toward nano-metal buried structure in InP - 20 nm wire and InP buried growth of tungsten},
journal = {Physica E},
year = 2000,
}
@article{CTT100445305,
author = {T. Arai and H. Tobita and Y. Miyamoto and K. Furuya},
title = {GaAs buried growth over tungsten stripe using TEG and TMG},
journal = {J. Crystal Growth},
year = 2000,
}
@article{CTT100435476,
author = {栗田昌尚 and 宮本恭幸 and 古屋一仁},
title = {GaInAs/AlAs/InP構造真空エミッタからの電子放出},
journal = {第61回応用物理学会学術講演会},
year = 2000,
}
@article{CTT100435475,
author = {山上滋春 and 新井俊希 and 奥田慶文 and 宮本恭幸 and 古屋一仁},
title = {BMHBT微細化に向けた0.5μｍ幅エミッタInP系DHBTの作製と評価},
journal = {第61回応用物理学会学術講演会},
year = 2000,
}
@article{CTT100435474,
author = {小口博嗣 and 佐藤航一郎 and 宮本恭幸 and 古屋一仁},
title = {電子波干渉素子用GaInAs上80nm周期電極の特性},
journal = {第47回応用物理学会関係連合講演会},
year = 2000,
}
@article{CTT100435427,
author = {新井俊希 and 飛田洋 and 宮本恭幸 and 古屋一仁},
title = {TMGとTEGを材料としたタングステン細線のGaAs OMVPE埋め込み成長},
journal = {第47回応用物理学会関係連合講演会},
year = 2000,
}
@article{CTT100435426,
author = {新井俊希 and 原田恵充 and 山上滋春 and 宮本恭幸 and 古屋一仁},
title = {Buried Metal Heterojunction Bipolar Transistorにおけるベースコレクタ間容量の低減},
journal = {第47回応用物理学会関係連合講演会},
year = 2000,
}
@article{CTT100435425,
author = {Y. Miyamoto and R. Yamamoto and H. Tobita and K. Furuya},
title = {Very shallow n-GaAs ohmic contact with 10nm thick GaInAs layer},
journal = {19th Electronic Materials Symposium},
year = 2000,
}
@article{CTT100435424,
author = {T. Arai and S. Yamagami and Y. Okuda and Y. Harada and Y. Miyamoto and K. Furuya},
title = {InP DHBT with 0.5μm Wide Emitter along 010 Direction toward BM-HBT with Narrow Emitter},
journal = {Topical Workshop on Heterostructure Microelectronics (TWHM'00)},
year = 2000,
}
@article{CTT100435423,
author = {Y. Miyamoto and M. Kurita and K. Furuya},
title = {Vacuum Microelectronic Electron Emitter by InP Double Barrier Diode Toward RFApplication},
journal = {58th Annual Device Research Conference},
year = 2000,
}
@article{CTT100435422,
author = {T. Arai and H. Tobita and Y. Miyamoto and K. Furuya},
title = {GaAs buried growth over tungsten stripes using TEG and TMG},
journal = {11th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE XI)},
year = 2000,
}
@article{CTT100435421,
author = {T. Arai and Y. Harada and S. Yamagami and Y. Miyamoto and K. Furuya},
title = {CBC reduction in GaInAs/InP buried metal heterojunction bipolar transistor},
journal = {Twelfth International Conference on Indium Phosphide and Related Materials (IPRM'00)},
year = 2000,
}
@article{CTT100434647,
author = {YASUYUKI MIYAMOTO},
title = {Peak Width Analysis of Current-Voltage Characteristics of Triple-Barrier Resonant Tunneling Diodes},
journal = {Jpn. J. Appl. Phys},
year = 2000,
}
@article{CTT100434646,
author = {T. Arai and Y. Harada and S. Yamagami and Y. Miyamoto and K. Furuya},
title = {First Fabrication of GaInAs/InP Buried Metal Heterojunction Bipolar Transistor and Reduction of Base-Collector Capacitance},
journal = { Jpn. J. Appl. Phys.},
year = 2000,
}
@article{CTT100433146,
author = {Y. Miyamoto and A. Kokubo and H. Oguchi and M. Kurahashi and K. Furuya},
title = {Fabrication and transport properties of 50-nm-wide Au/Cr/GaInAs electrode for electron wave interference device},
journal = {Applied Surface Science},
year = 2000,
}
@article{CTT100425152,
author = {Y.Miyamoto and H.Tobita and K.Oshima and K.Furuya},
title = {Barrier thickness dependence of peak current density in GaInAs/AlAs/InP resonant tunneling diodes by MOVPE},
journal = {Solid State Electronics},
year = 1999,
}
@article{CTT100442447,
author = {H.Hongo and Y.Miyamoto and J.Suzuki and M.Suhara and K.Furuya},
title = {Wrapped Alignment Mark for fabrication of Interference/Diffraction hot electron devices},
journal = {Jpn. J. Appl.Phys.},
year = 1998,
}
@article{CTT100434642,
author = {T.Oobo and R.Takemura and K.Sato and M.Suhara and Y.Miyamoto and K.Furuya},
title = {Effect of spacer layer thickness in energy level width narrowing in GaInAs/InP resonant tunneling diodes grown by OMVPE},
journal = { Jpn. J. Appl. Phys.},
year = 1998,
}
@article{CTT100434643,
author = {A.Kokubo and T.Hattori and H.Hongo and M.Suhara and Y.Miyamoto and K.Furuya},
title = {25 nm Pitch GaInAs/InP Buried Structure by Calixarene Resist},
journal = {Jpn. J. Appl. Phys.},
year = 1998,
}
@article{CTT100442448,
author = {Y.Miyamoto and A.Yamaguchi and K. Oshima and W.Saitoh and M.Asada},
title = {Metal-Insulator-Semiconductor emitter with epitaxial CaF2 layer as insnlator},
journal = {J. Vac. Sci. Technol.},
year = 1998,
}
@article{CTT100442449,
author = {Y.Miyamoto and J.Yoshinaga and H.Toda and T.Arai and H.Hongo and T.Hattori and A.Kokubo and K.Furuya},
title = {Sub-micron GaInAs/InP Hot Electron Transistors by EBL process and size dependence of current gain},
journal = {Solid State Electronics},
year = 1998,
}
@article{CTT100537351,
author = {Y.Miyamoto and A.Kokubo and T.Hattori and H.Hongo and M.Suhara and K.Furuya},
title = {25 nm pitch GaInAs/InP buried structure : Improvement by calixarene as EB resist and TBP as P-source in OMVPE regrowth},
journal = { J. Vac. Sci. Technol. B},
year = 1998,
}
@article{CTT100434640,
author = {M.Suhara and C.Nagao and H.Honji and Y.Miyamoto and K.Furuya and R.Takemura},
title = {Atomically flat OMVPE growth of GaInAs and InP observed by AFM for level narrowing in resonant tunneling diodes},
journal = {J.Cryst.Growth},
year = 1997,
}
@article{CTT100434641,
author = {T.Oobo and R.Takemura and M.Suhara and Y.Miyamoto and K.Furuya},
title = {High Peak to Valley Current Ratio GaInAs/GaInP Resonant Tunneling Diodes},
journal = {Jpn.J.Appl.Phys.},
year = 1997,
}
@article{CTT100442445,
author = {J.M.M.Rios and L.M.Lurardi and S.Chandrasekhar and Y.Miyamoto},
title = {A self-consistent method for complete small-signal parameter extraction of InP-based heterojunction bipolar transistors(HBTs)},
journal = {IEEE Transaction of Microwave Theory and Technigue},
year = 1997,
}
@article{CTT100434639,
author = {YASUYUKI MIYAMOTO},
title = {High-temperature estimation of phase coherent length of hot electron using GaInAs/InP triple-barrier resonant tunneling diodes grown by OMVPE},
journal = {Jpn.J.Appl.Phys.},
year = 1997,
}
@article{CTT100434638,
author = {H.Hongo and H.Tanaka and Y.Miyamoto and T.Otake and J.Yoshinaga and K.Furuya},
title = {Electrical properties of 100nm pitch Cr/Au fine electrodes with 40nm width on GaInAs toward hot electron interference/diffraction devices},
journal = {Microelectronic Engineering},
year = 1997,
}
@article{CTT100434637,
author = {H.Hongo and Y.Miyamoto and M.Suhara and K.Furuya},
title = {Hot electron interference by 40nm-pitch double slit buried in semiconductor},
journal = {Microelectronic Engineering},
year = 1997,
}
@article{CTT100442444,
author = {H.Hongo and Y.Miyamoto and M.Suhara and K.Furuya},
title = {A 40nm pitch doble slit experiment of hot electrons in a semiconductor under a magnetic field},
journal = {Applied Physics Letter},
year = 1997,
}
@article{CTT100442446,
author = {H.Hongo and Y.Miyamoto and M.Gault and K.Furuya},
title = {Influence of finite energy width in electron distribution to an experiment of hot electron donble-slit eyperiment},
journal = {J. Appl. Phys.},
year = 1997,
}
@article{CTT100672943,
author = {MASAHIRO WATANABE and H. Hongo and T. Hattori and Y. Miyamoto and K. Furuya and T. Matsunuma and M. Asada},
title = {Seventy nm Pitch Patternings on CaF2 by e-beam Exposure: An Inorganic Resist and a Contamination Resist},
journal = {Jpn. J. Appl. Phys.},
year = 1996,
}
@article{CTT100672930,
author = {MASAHIRO WATANABE and Y. Miyamoto, K and T. Maruyama and M. Asada},
title = {Detection of hot electron current with scanning hot electron microscopy},
journal = {Appl. Phys. Lett},
year = 1996,
}
@article{CTT100442441,
author = {Y.Miyamoto and J.M.M.Rios and A.G.Dentai and S.Chandrasekhar},
title = {Reduction of Base-Collector Capacitance by Undercut of Collector and Subcollector in GaInAs/InP DHBTS},
journal = {IEEE Electron Devices Letter},
year = 1996,
}
@article{CTT100442442,
author = {H.Hongo and H.Tanaka and Y.Miyamoto and J.Yoshinaga and K.Furuya},
title = {Electrical properties of 100nm pitch Cr/Au fine electrodes with 40nm width on GaAs},
journal = {Japanese Journal of Applied Physics},
year = 1996,
}
@article{CTT100442443,
author = {H.Hongo and T.Hattori and Y.Miyamoto and K.Furuya and K.Matsunuma and M.Watanabe and M.Asada},
title = {Seventy nm pitch patterning on CaF2 by e-beam exposure : An inorganic resist and a contamination resist},
journal = {Japanese Journal of Applied Physics},
year = 1996,
}
@article{CTT100442439,
author = {Y.Miyamoto and A.G.Dentai and J.M.M.Rios and S.Chandrasekhar},
title = {GaInAs/InP DHBT Incorporating Thick Extrinsic Base and Seletively Regrown Emitter},
journal = {Electronics Letter},
year = 1995,
}
@article{CTT100442440,
author = {H.Hongo and J.Suzuki and M.Suhara and Y.Miyamoto and K.Furuya},
title = {Nanostructure Alignment for Hot Electron Interferenc/Diffraction Devices},
journal = {Japanese Journal Applied Physics},
year = 1995,
}
@article{CTT100442437,
author = {H.Hongo and Y.Miyamoto and J.Suzuki and M.Funayama and T.Morita and K.Furuya},
title = {Ultrafine fabrication technique for hot electron interference/diffraction devices},
journal = {Japanese Journal Applied Physics},
year = 1994,
}
@article{CTT100442438,
author = {M.Suhara and Y.Miyamoto and H.Hongo and J.Suzuki and K.Furuya},
title = {GaInAs/InP organometallic vapor phase epitaxy regrowth for ultrafine buried heterostructure with 50nm pitch toward electron wave devices},
journal = {Journal of Crystal Growth},
year = 1994,
}
@article{CTT100442433,
author = {T.Sekiguchi and Y.Miyamoto and K.Furuya},
title = {Influence of impurities on the performance of doped well Ga In As/Inp resonant tunneling diode},
journal = {Jpn. J. Appl. Phys},
year = 1993,
}
@article{CTT100442435,
author = {Y.Miyake and H.Hirayama and K.Kudo and S.Tamura and S.Arai and M.Asada and Y.Miyamoto and Y.Suematsu},
title = {Room temperature operation of GaInAs/GaInAsP/InP SCH lasers with quantuw-wire size active region},
journal = {IEEE J. Quantum Electron},
year = 1993,
}
@article{CTT100442436,
author = {YASUYUKI MIYAMOTO},
title = {Fabrication technology for long-wavelength Ga In As(P)InP quantum-wire lasers by wet-chemical etching and OMVPE regrowth},
journal = {Opto electronics-Devices and technology},
year = 1993,
}
@article{CTT100442434,
author = {K.Kurihara and Y.Miyamoto and K.Furuya},
title = {Observation of InP Surfaces after (NH4)2Sx treatment by a scanning tunneling microscope},
journal = {Jpn. J. Appl. Phys},
year = 1993,
}
@article{CTT100442430,
author = {Y.Miyamoto and K.Furuya and D.Yamazaki},
title = {Fabricution of ultrafine X-ray mask using pricise crystal growth techniqe},
journal = {Jpn. J. Appl. Phys.},
year = 1992,
}
@article{CTT100442429,
author = {T.Suemasu and Y.Miyamoto and K.Furuya},
title = {Improvement of regrown interface in InP organo-metallic vapor phase epitaxy},
journal = {Jpn. J. Appl. Phys.},
year = 1991,
}
@article{CTT100442432,
author = {YASUYUKI MIYAMOTO},
title = {Fabrication of quantum wire structure},
journal = {Journal of crystallgraphic society of Japan},
year = 1991,
}
@article{CTT100442424,
author = {T.Yamamoto and Y.Miyamoto and M.Ogawa and E.Inamura and K.Furuya},
title = {Buried rectangnber GaInAs/InP corrugations of 70nm pitch by OMVPE},
journal = {Electronics Lett.},
year = 1990,
}
@article{CTT100442423,
author = {Y.Miyamoto and S.Yamaura and K.Furuya},
title = {Negative differential conductiance due to resonant states in GmInAs/InP hot electron transistors},
journal = {Appl. Phys. Lett},
year = 1990,
}
@article{CTT100442425,
author = {S.Yamaura and Y.Miyamoto and K.Furuya},
title = {High current gain GnInAS/InP hot electron transistor},
journal = {Electronics Lett.},
year = 1990,
}
@article{CTT100442431,
author = {Y.Miyamoto and Y.Miyake and M.Asada and Y.Suematsu},
title = {Threshold current density of GaInAsP/InP quantum box Lasers},
journal = {IEEE J. Quantum. Electron},
year = 1989,
}
@article{CTT100442426,
author = {E.Inamura and Y.Miyamoto and S.Tamura and S.Takasugi and K.Furuya},
title = {Wet chemical etching for ultra fine periodic structrures ; rectangular InP corrugations of 70nm pitch and 100nm depth},
journal = {Jpn. J. Appl. Phys.},
year = 1989,
}
@article{CTT100442428,
author = {Y.Miyamoto and C.Watanabe and M.Nagashima and K.Furuya and Y.Suematsu},
title = {Fabrication of GaInAsP/InP heterostructure for 1.5μm lasers by OMVPE},
journal = {Trans. IEICE of Japan.},
year = 1987,
}
@article{CTT100442427,
author = {Y.Miyamoto and M.Cao and Y.Shingai and K.Furuya and Y.Suematsu and K.G.Ravikumar and S.Arai},
title = {Ligth emisson form quantun box structure by current injection},
journal = {Jpn. J. Appl. Phys},
year = 1987,
}
@inproceedings{CTT100887486,
author = {Y. Miyamoto and N. Nishiyama and S. Suzuki},
title = {Electron beam lithography in processes for electron/opto/teraherz devices},
booktitle = {},
year = 2023,
}
@inproceedings{CTT100887485,
author = {K. Makiyama and S. Yoshida and K. Nakata and Y. Miyamoto},
title = {Innovative RF Device Technologies for Advanced Information and Communications Network Society},
booktitle = {},
year = 2022,
}
@inproceedings{CTT100887483,
author = {Y. Ito and S. Tamai and T. Hoshi and Y. Miyamoto},
title = {GaN channel thickness dependence in AlGaN / GaN HEMT structures with back barriers},
booktitle = {},
year = 2022,
}
@inproceedings{CTT100887482,
author = {Y. Miyamoto and K. Makiyama},
title = {Lateral thickness change of the high-k film on GaN HEMT for uniform electric field},
booktitle = {},
year = 2022,
}
@inproceedings{CTT100875027,
author = {T. Gotow and T. Arai and T. Aota and Y. Miyamoto},
title = {Evaluation of TMAH treatment for isolation process of N-polar GaN HEMTs},
booktitle = {},
year = 2022,
}
@inproceedings{CTT100880230,
author = {新井貴大 and 青田智也 and 眞壁勇夫 and 中田健 and 後藤高寛 and 宮本恭幸},
title = {N極性GaN HEMTのTMAHによる素子分離},
booktitle = {},
year = 2022,
}
@inproceedings{CTT100875023,
author = {Tomimasa Go and M. Kitamura and T. Gotow and Y. Miyamoto},
title = {PMA Evaluation of TiN ALD in InGaAs Nanosheet MOSFETs},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100875020,
author = {T. Gotow and Tatsushi Suka and Y. Miyamoto},
title = {Comparative study of breakdown and interface properties of gate insulator on N-polar and Ga-polar GaN MIS capacitor},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100880231,
author = {後藤高寛 and 須賀達士 and 宮本恭幸},
title = {N極性およびGa極性GaN MIS構造の界面特性の比較検討},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100875017,
author = {Y. Miyamoto and T. Gotow},
title = {Proposal of breakdown voltage control of GaN HEMT by interface charge},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100845767,
author = {宮本恭幸 and 後藤高寛},
title = {界面電荷量によるGaN HEMTの耐圧制御の提案},
booktitle = {},
year = 2021,
}
@inproceedings{CTT100842580,
author = {Tomoya Aota and Akihiro Hayasaka and isao makabe and Shigeki Yoshida and Takahiro Gotow and YASUYUKI MIYAMOTO},
title = {Wet Etching for Isolation of N-polar GaN HEMT Structure by Electrodeless Photo-Assisted Electrochemical Reaction},
booktitle = {},
year = 2020,
}
@inproceedings{CTT100842581,
author = {青田 智也 and 早坂 明泰 and 眞壁 勇夫 and 吉田 成輝 and 後藤 高寛 and 宮本 恭幸},
title = {N極性GaN HEMT構造での無電極PECエッチング},
booktitle = {},
year = 2020,
}
@inproceedings{CTT100822693,
author = {毛利 匡裕 and 早坂 明泰 and 眞壁 勇夫 and 吉田 成輝 and 後藤 高寛 and 宮本 恭幸},
title = {N極性GaN HEMT構造におけるコンタクト抵抗の低減},
booktitle = {},
year = 2020,
}
@inproceedings{CTT100828196,
author = {Moataz Eissa and Takuya Mitarai and Tomohiro Amemiya and Nobuhiko Nishiyama and Yasuyuki Miyamoto},
title = {Fabrication of Si Photonics Waveguides by Thick Resist-Mask Electron Beam Lithography Proximity Effect Correction},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100822692,
author = {早坂 明泰 and 青沼 遼介 and 堀田 航史 and 金井 七重 and 眞壁 勇夫 and 吉田 成輝 and 宮本 恭幸},
title = {N極性GaN HEMT作製プロセスにおけるプラズマダメージの低減},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100822691,
author = {K. Fukuda and N. Nogami and S. Kunisada and Y. Miyamoto},
title = {Circuit speedoriented device design scheme for double gate hetero tunnel FETs},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100803276,
author = {MOATAZ Shaher Anis Mahmoud Eissa and 御手洗 拓矢 and 雨宮 智宏 and 西山 伸彦 and 宮本 恭幸},
title = {Fabrication of Si Photonics Waveguides by Thick Resist-Mask Electron Beam Lithography Proximity Effect Correction},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100822685,
author = {M.Kitamura and T.Kanazawa and Y.Miyamoto},
title = {Evaluation of fabricationmethod of InGaAs nanosheet},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100803257,
author = {Tomohiro Amemiya and Tomoya Yoshida and Yuki Atsumi and Yasuyuki Miyamoto and Yoichi Sakakibara and Shigehisa Arai},
title = {Si-based Orbital Angular Momentum Mux/Demux Module},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100800938,
author = {Y. Miyamoto},
title = {Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin Undoped Channel and Semi-Insulating Layer},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100800936,
author = {A. Hayasaka and R. Aonuma and K. Hotta and I. Makabe and S. Yoshida and Y. Miyamoto},
title = {N-polar GaN HEMT with Al2O3 gate insulator},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100800846,
author = {早坂 明泰 and 青沼 遼介 and 堀田 航史 and 眞壁 勇夫 and 吉田 成輝 and 宮本 恭幸},
title = {Al2O3ゲート絶縁膜を持つN極性GaN HEMT},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100800847,
author = {張 文倫 and 金澤 徹 and 北村 稔 and 宮本 恭幸},
title = {UV-O3表面酸化によるHfS2 MOSFETの性能改善},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100803290,
author = {⾬宮 智宏 and 吉⽥ 知也 and 渥美 裕樹 and 西山 伸彦 and 宮本 恭幸 and 榊原 陽⼀ and 荒井 滋久},
title = {Siフォトニクスによる光渦MUX/DEMUXモジュール},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100803268,
author = {Tomohiro Amemiya and Tomoya Yoshida and Yuki Atsumi and Nobuhiko Nishiyama and Yasuyuki Miyamoto and Yoichi Sakakibara and Shigehisa Arai},
title = {Orbital Angular Momentum Mux/Demux Module Using Vertically Curved Si Waveguides},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100800848,
author = {北村 稔 and 金澤 徹 and 宮本 恭幸},
title = {HSQを用いたInGaAsナノシート構造作製法評価},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100800849,
author = {野上 直哉 and 福田 浩一 and 宮本 恭幸},
title = {量子効果の影響を考慮したGaAsSb/InGaAs Double-Gate Tunnel FETの検討},
booktitle = {},
year = 2019,
}
@inproceedings{CTT100800934,
author = {Y. Miyamoto and N. Kise and R. Aonuma},
title = {GaAsSb/InGaAs double gate tunnel FET operating below 60 mv/decade and temperature dependence of band-edge decay parameters},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100800931,
author = {Y. Miyamoto},
title = {Prospective New Fuctionality of Monolithic GaN HEMT Integrated Circuits},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100800930,
author = {K. Hotta and Y. Tomizuka and K. Itagaki and I. Makabe and S. Yoshida and Y. Miyamoto},
title = {Annealing temperature dependence of alloy contact for N-polar GaN HEMT structure},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100800850,
author = {雨宮 智宏 and 吉田 知也 and 渥美 祐樹 and 西山 伸彦 and 宮本 恭幸 and 榊原 陽一 and 荒井 滋久},
title = {Siフォトニクスによる光渦MUX/DEMUXモジュール},
booktitle = {電子情報通信学会技術研究報告},
year = 2018,
}
@inproceedings{CTT100800886,
author = {岩田 真次郎 and 大橋 一水 and 祢津 誠晃 and 福田 浩一 and 宮本 恭幸},
title = {GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける界面準位の導入による性能の劣化},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100800939,
author = {Y. Higa and M. Yoshida and N. Nishiyama and Y. Miyamoto and Nobuyuki Kagi},
title = {High Power, 14xx-nm Eye-safe, Epitaxially Stacked Pulse Laser for Detection and Ranging Applications},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100800928,
author = {R. Aonuma and N. Kise and Y. Miyamoto},
title = {Improvement in GaAsSb/InGaAs double-gate tunnel FET using thermal evaporation for gate electrode and Al2O3/ZrO2 for gate insulator},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100800925,
author = {W. Zhang and S. Netsu and T.Kanazawa and T. Amemiya and Y. Miyamoto},
title = {p-MoS2/HfS2 van der Waals Heterostructure Transistor Using Ni Backgate Buried in HfO2 Dielectric},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100800883,
author = {吉田匡廣 and 比嘉康貴 and 西山伸彦 and 宮本恭幸 and 加木信行},
title = {測距用14xx-nm Eye-safe波長帯高出力エピタキシャルスタックパルスレーザ},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100800854,
author = {張 文倫 and 祢津 誠晃 and 金澤 徹 and 雨宮 智宏 and 宮本 恭幸},
title = {埋め込みNiバックゲートを用いたp-MoS2/HfS2トンネルFET},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100800853,
author = {雨宮 智宏 and 吉田 知也 and 渥美 裕樹 and 西山 伸彦 and 宮本 恭幸 and 榊原 陽一 and 荒井 滋久},
title = {Si湾曲カプラを用いた光渦MUX/DEMUXモジュール},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100800852,
author = {堀田 航史 and 富塚 ゆみ子 and 板垣 光祐 and 眞壁 勇夫 and 吉田 成輝 and 宮本 恭幸},
title = {N極性GaN HEMT構造のコンタクト抵抗の熱処理温度依存性},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100800851,
author = {青沼 遼介 and 木瀬 信和 and 宮本 恭幸},
title = {Al2O3/ZrO2ゲート絶縁膜を使用したことによるGaAsSb/InGaAsダブルゲートトンネルFETの性能改善},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100800924,
author = {D. Nakajun and N. Kanai and R. F. T. Fathulah and H. Fujita and E. Yagyu and Y. Miyamoto},
title = {Multi-level inverter toward GaN HEMT monolithic integrated circuit},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100799619,
author = {Nanae Kanai and Kenichi Okada and Yasuyuki Miyamoto},
title = {Investigation of Active Load Matching Using GaN HEMT as Digital Switch},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100800923,
author = {Y.Miyamoto and T. Kanazawa and N. Kise and H. Kinoshita and Kazuto Ohsawa},
title = {Regrown Source / Drain in InGaAs Multi-Gate MOSFET},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100768825,
author = {Toru Kanazawa and Kazuto Ohsawa and Tomohiro Amemiya and Nobukazu Kise and Ryosuke Aonuma and Yasuyuki Miyamoto},
title = {Fabrication of InGaAs Nanosheet Transistors with Regrown Source},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100816315,
author = {YASUYUKI MIYAMOTO},
title = {The Potential of GaN HEMT on GaN Substrate},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100800884,
author = {木瀬 信和 and 青沼 遼介 and 宮本 恭幸},
title = {GaAsSb/InGaAsダブルゲートトンネルFETにおけるゲート金属形成プロセスの影響},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100800885,
author = {國貞 彰吾 and 福田 浩一 and 宮本 恭幸},
title = {GaAsSb/InGaAsダブルゲートTunnel FETにおける量子効果の検討‐正孔バンドの取り扱い},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100759540,
author = {金澤 徹 and 大澤 一斗 and 雨宮 智宏 and 木瀬 信和 and 青沼 遼介 and 宮本 恭幸},
title = {InGaAsナノシートトランジスタの作製},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100757917,
author = {Toru Kanazawa and Yasuyuki Miyamoto},
title = {Development of Field-Effect Transistor Using 2D Layered Hafnium Disulfide},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100752196,
author = {木瀬 信和 and 岩田 真次郎 and 青沼 遼介 and 宮本 恭幸},
title = {[8a-S22-1] 68mV/decのSSをもつGaAsSb/InGaAsダブルゲートトンネルFET},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100747615,
author = {⼤澤 ⼀⽃ and ⾦澤 徹 and ⽊瀬 信和 and ⾬宮 智宏 and 宮本 恭幸},
title = {InGaAsナノシートチャネルを持つマルチゲートMOSFETに向けた作製プロセス開発},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100747612,
author = {祢津 誠晃 and ⾦澤 徹 and ⾬宮 智宏 and 宮本 恭幸},
title = {HfS2/MoS2 ヘテロジャンクションの温度依存電流特性},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100758803,
author = {K. Makiyama and T. Ohki and S. Ozaki and Y. Niida and N. Okamoto and Y. Minoura and M. Sato and Y. Kamada and T. Ishiguro and K. Joshin and N. Nakamura and Y. Miyamoto},
title = {InAlGaN/GaN-HEMT Device Technologies for High-Power-Density W-band Amplifiers (Invited)},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100752193,
author = {國貞 彰吾 and 福田 浩一 and 宮本 恭幸},
title = {[8a-C18-3] InGaAs/GaAsSbダブルゲートTunnel FETにおける量子効果の影響},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100747601,
author = {Seiko Netsu and Toru Kanazawa and Vikrant Upadhyaya and Teerayut Uwanno and Tomohiro Amemiya and Kosuke Nagashio and Yasuyuki Miyamoto},
title = {Type II HfS2/MoS2 heterojunction Tunnel FET},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100752547,
author = {D. Nakajun and R. F. T. Fathulah and H. Fujita and E. Yagyu and Y. Miyamoto},
title = {Multi-level inverter by GaN HEMT on semi-insulating substrate},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100752745,
author = {K. Makiyama and S. Ozaki and Y. Niida and T. Ohki and N. Okamoto and Y. Minoura and M. Sato and Yoichi Kamada and K. Joshin and N. Nakamura and Yasuyuki Miyamoto},
title = {Advanced HEMTs and MMICs Technologies for Next Generation Millimeter-wave Amplifiers (Invited)},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100752724,
author = {Y. Miyamoto and D. Nakajun and R. F. T. Fathulah and H. Fujita and E. Yagyu},
title = {High speed GaN HEMT for power electronics (Invited)},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100752710,
author = {宮本恭幸},
title = {ヘテロ構造電子デバイスとMOVPE/MBE (チュートリアル講演)},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100752746,
author = {N. Kise and S. Iwata and R. Aonuma and K. Ohsawa and Y. Miyamoto},
title = {GaAsSb/InGaAs Double-Gate Vertical Tunnel FET with a Subthreshold Swing of 68mV/dec at Room Temperature},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100752749,
author = {K. Makiyama and Y. Niida and S. Ozaki and T. Ohki and N. Okamoto and Y. Minoura and M. Sato and Y. Kamada and K. Joshin and K. Watanabe and Y. Miyamoto},
title = {GaN HEMT Device Technology for W-band Power Amplifiers (Invited)},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100740070,
author = {岩田 真次郎 and 木瀬 信和 and 青沼 遼介 and 宮本 恭幸},
title = {[16p-412-5] GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける不純物濃度調整によるオン電流の向上},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100735618,
author = {金澤 徹 and 雨宮 智宏 and 祢津 誠晃 and Vikrant Upadhyaya and 福田 浩一 and 宮本 恭幸},
title = {HfS2系トンネルトランジスタのデバイスシミュレーション},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100740854,
author = {大澤 一斗 and 野口 真司 and 祢津 誠晃 and 木瀬 信和 and 宮本 恭幸},
title = {[16p-413-11] HfO2/Al2O3/InGaAsゲート構造をもつMOSFETの移動度のH2アニール後における成膜温度およびAl2O3膜厚依存性},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100738888,
author = {青沼遼介 and 岩田真次郎 and 木瀬信和 and 宮本恭幸},
title = {68mV/decのSSを持つGaAsSb/InGaAs縦型ダブルゲートトンネルFET},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100735914,
author = {祢津 誠晃 and 金澤 徹 and Vikrant Upadhyaya and ウワンノー ティーラユット and 雨宮 智宏 and 長汐 晃輔 and 宮本 恭幸},
title = {Type II 型 HfS2/MoS2ヘテロジャンクションを有するTFET},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100740944,
author = {大澤一斗 and 野口真司 and 祢津誠晃 and 木瀬信和 and 宮本恭幸},
title = {HfO2/Al2O3/InGaAsゲート構造における移動度への成膜温度およびH2アニールの影響},
booktitle = {信学技報},
year = 2017,
}
@inproceedings{CTT100735598,
author = {雨宮 智宏 and 山﨑 理司 and 金澤 徹 and 石川 篤 and 西山 伸彦 and 宮本 恭幸 and 田中 拓男 and 荒井 滋久},
title = {光回路とプラズモニックメタマテリアル},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100740975,
author = {K. Makiyama and Y. Niida and S. Ozaki and T. Ohki and N. Okamoto and Y. Minoura and M. Sato and Y. Kamada and K. Joshin and K. Watanabe and Y. Miyamoto},
title = {High-Power-Density InAlGaN/GaN-HEMT Technology for W-Band Amplifier (Invited)},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100740976,
author = {K. Ohsawa and N. Kise and Y. Miyamoto},
title = {Deposition Temperature and Al2O3 Thickness Dependence on the Mobility of HfO2/Al2O3/InGaAs Gate Stacks},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100722102,
author = {金澤 徹 and Vikrant Upadhyaya and 雨宮 智宏 and 石川 篤 and 鶴田 健二 and 田中 拓男 and 宮本 恭幸},
title = {HfO2パッシベーションによるHfS2 FETの特性改善},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100740907,
author = {大澤 一斗 and 木瀬 信和 and 宮本 恭幸},
title = {15p-B9-10 HfO2/Al2O3/InGaAsゲート構造における移動度の成膜温度およびAl2O3膜厚依存性},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100740963,
author = {M. Kashiwano and A. Yukimachi and Y. Miyamoto},
title = {Experimental approach for feasibility of superlattice FETs},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100740965,
author = {K. Makiyama and S. Ozaki and Y. Niida and T. Ohki and N. Okamoto and Y. Minoura and M. Sato and Y. Kamada and K. Joshin and K. Watanabe and Y. Miyamoto},
title = {InAlGaN/GaN-HEMT device technologies for W-band high-power amplifier (Invited)},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100740969,
author = {K. Makiyama and S. Ozaki and T. Ohki and N. Okamoto and Y. Minoura and Y. Niida and Y. Kamada and M. Sato and K. Joshin and K. Watanabe and Y. Miyamoto},
title = {High-Performance GaN-HEMT Technology for W-band Amplifier (Invited)},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100722083,
author = {Toru Kanazawa and Tomohiro Amemiya and Vikrant Upadhyaya and Atsushi Ishikawa and Kenji Tsuruta and Takuo Tanaka and Yasuyuki Miyamoto},
title = {Effect of the HfO2 passivation on HfS2 Transistors},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100740962,
author = {Y. Miyamoto and W. Lin and S.Iwata and K. Fukuda},
title = {Steep sub-threshold slope in short-channel InGaAs TFET (Invited)},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100725110,
author = {Vikrant Upadhyaya and Toru Kanazawa and YASUYUKI MIYAMOTO},
title = {Vacuum annealing and passivation of Hf2 FET for mitigation of atmospheric degradation},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100709160,
author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and Nobuhiko Nishiyama and Yasuyuki Miyamoto and Tatsuhiro Urakami and Takuo Tanaka and Shigehisa Arai},
title = {(Invited) Permeability Engineering in Optical Communication Devices},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100725185,
author = {Haruki Kinoshita and Nobukazu Kise and Atsushi Yukimachi and Toru Kanazawa and Yasuyuki Miyamoto},
title = {Operation of 16-nm InGaAs channel multi-gate MOSFETs with regrown source/drain},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100725183,
author = {Vikrant Upadhyaya and Toru Kanazawa and Yasuyuki Miyamoto},
title = {Evaluation of electrical properties of HfS2 thin flakes obtained by mechanical exfoliation},
booktitle = {信学技報},
year = 2016,
}
@inproceedings{CTT100740893,
author = {林 文博 and 岩田 真次郎 and 福田 浩一 and 宮本 恭幸},
title = {短チャネルTFET におけるソース-ドレイン間直接トンネリングのオフ電流への寄与},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100725184,
author = {木下 治紀 and 木瀬 信和 and 祢津 誠晃 and 金澤 徹 and 宮本 恭幸},
title = {再成長S/Dを有するInGaAsマルチゲートMOSFETのLch=16nm動作},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100725116,
author = {Upadhyaya Vikrant and kanazawa Toru and Miyamoto Yasuyuki},
title = {Measures for mitigating environmental degradation of Two Dimensional Hafnium Disulfide Field Effect Transistor},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100740895,
author = {木下 治紀 and 木瀬 信和 and 祢津 誠晃 and 金澤 徹 and 宮本 恭幸},
title = {[22p-W541-5] 再成長S/Dを有するInGaAsマルチゲートMOSFETのLch=16nm動作},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100715673,
author = {Y. Miyamoto},
title = {Steep slope devices with InGaAs channel for post Si CMOS application},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100717942,
author = {K. Makiyama and S. Ozaki and T. Ohki and N. Okamoto and Y. Minoura and Y. Niida and Y. Kamada and K. Joshin and K. Watanabe and Y. Miyamoto},
title = {Collapse Free High Power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100709147,
author = {Toru Kanazawa and Tomohiro Amemiya and Atsushi Ishikawa and Vikrant Upadhyaya and Takuo Tanaka and Kenji Tsuruta and Yasuyuki Miyamoto},
title = {HfS2 Electric Double Layer Transistor with High Drain Current},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100800887,
author = {木下 治紀 and 金澤 徹 and 祢津 誠晃 and 三嶋 裕一 and 宮本 恭幸},
title = {再成長ソース/ドレインを有するInGaAsマルチゲートMOSFET作製プロセス},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100800888,
author = {行待 篤志 and 宮本 恭幸},
title = {超格子FET のためのAlAs/InGaAsダブルバリアp-i-n 接合ダイオード},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100721929,
author = {Y. Miyamoto and M. Fujimatsu and K. Ohashi and A. Yukimachi and S. Iwata},
title = {Steep subthreshold slope in InGaAs MOSFET},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100721938,
author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and K. Ohsawa and Y. Mishima and M. Fujimatsu and K. Ohashi and S. Nestu and S. Iwata},
title = {InGaAs channel for low supply voltage},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100717934,
author = {S. Iwata and W. Lin and K. Fukuda and Y. Miyamoto},
title = {Design of drain for low off current in GaAsSb/InGaAs tunnel FETs},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100721910,
author = {H.Kinoshita and S.Netsu and Y.mishima and T.Kanazawa and Y.Miyamoto},
title = {Fabrication of InGaAs channel multi-gate MOSFETs with MOVPE regrown source/drain},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100721886,
author = {K. Ohsawa and Y. Mishima and Y. Miyamoto},
title = {Operation of 13-nm channel length InGaAs-MOSFET with n-InP source},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100716504,
author = {S. Netsu and T. Kanazawa and Y. Miyamoto},
title = {Improvement of Interface Property of HfO2/Al2O3/In0.53Ga0.47As Using Nitrogen Plasma Cleaning and Hydrogen Annealing},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100677904,
author = {Tomohiro Amemiya and Atsushi Ishikawa and Toru Kanazawa and Nobuhiko Nishiyama and Yasuyuki Miyamoto and Takuo Tanaka and Shigehisa Arai},
title = {(Invited) Possibility of permeability control on InP-based photonic integration platform},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100693222,
author = {T. Kanazawa and T. Amemiya and A. Ishikawa and V. Upadhyaya and K. Tsuruta and T. Tanaka and Y. Miyamoto},
title = {Fabrication of Thin-Film HfS2 FET},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100682919,
author = {雨宮 智宏 and 石川 篤 and 金澤 徹 and 西山 伸彦 and 宮本 恭幸 and 田中 拓男 and 荒井 滋久},
title = {光通信素子における透磁率制御の可能性},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100693240,
author = {行待 篤志 and 柏野 壮志 and 宮本 恭幸},
title = {超格子FETに向けたダブルバリアp-i-n接合ダイオード},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100693239,
author = {祢津 誠晃 and 金澤 徹 and 宮本 恭幸},
title = {HfO2/Al2O3/In0.53Ga0.47As界 面に対する窒素プラズマクリーニング後の水素アニール効果に関する研究},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100693238,
author = {木下 治紀 and 金澤 徹 and 祢津 誠晃 and 三嶋 裕一 and 宮本 恭幸},
title = {再成長ソース/ドレインを有するInGaAsマルチゲートMOSFET作製プロセスに関する研究},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100693237,
author = {大澤 一斗 and 三嶋 裕一 and 宮本 恭幸},
title = {InGaAs-MOSFETのチャネル長微細化に関する研究},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100693236,
author = {宮本恭幸 and 行待篤志},
title = {超格子ソースによるスティープスロープFETの可能性},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100693235,
author = {岩田真次郎 and 大橋一水 and 宮本恭幸},
title = {GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおけるI-V特性の不純物濃度依存性},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100682907,
author = {金澤 徹 and 雨宮 智宏 and 石川 篤 and 鶴田 健二 and 田中 拓男 and 宮本 恭幸},
title = {薄膜HfS2 FET},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100682905,
author = {石川 篤 and 金澤 徹 and 雨宮 智宏 and 鶴田 健二 and 田中 拓男 and 宮本 恭幸},
title = {機械的剥離法を用いたHfS2原子薄膜の作製と基礎物性の評価},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100679171,
author = {R. Yamanaka and T. Kanazawa and E. Yagyu and Y. Miyamoto},
title = {Normally-off AlGaN/GaN HEMT using Digital Etching Technique},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100693231,
author = {大橋一水 and 藤松基彦 and 宮本恭幸},
title = {GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける SSとON電流のボディ幅依存性},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100679170,
author = {K. Ohashi and M. Fujimatsu and Y. Miyamoto},
title = {Body width dependence of subthreshold slope and on-current in GaAsSb/InGaAs Double Gate Vertical Tunnel FETs},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100674604,
author = {雨宮 智宏 and 金澤徹 and 石川 篤 and 姜 晙炫 and コ シチン and 西山 伸彦 and 宮本 恭幸 and 田中 拓男 and 荒井 滋久},
title = {［依頼講演］透磁率制御メタマテリアルを装荷した光変調器},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100693230,
author = {宮本恭幸},
title = {低消費電力と高速動作を両立させるInP系電子デバイス},
booktitle = {エレクトロニクスソサエティ受賞記念講演},
year = 2014,
}
@inproceedings{CTT100693234,
author = {山中僚大 and 金澤徹 and 柳生栄治 and 宮本恭幸},
title = {デジタルエッチングを用いたGaN HEMTのノーマリーオフ化},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100693229,
author = {宮本恭幸 and 金澤 徹 and 米内義晴 and 加藤 淳 and 藤松基彦 and 柏野壮志 and 大澤一斗 and 大橋一水},
title = {低電圧/高速動作にむけたInGaAs MOSFETソース構造},
booktitle = {IEICE Technical Report},
year = 2014,
}
@inproceedings{CTT100693228,
author = {大橋一水 and 藤松基彦 and 宮本恭幸},
title = {GaAsSb/InGaAsヘテロ接合を用いたDouble-Gate Tunnel FETの理論特性とその実験的検証},
booktitle = {IEICE Technical Report},
year = 2014,
}
@inproceedings{CTT100661087,
author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and JoonHyun Kang and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and Takuo Tanaka and SHIGEHISA ARAI},
title = {(Invited) Meta-photonics for Advanced InP-based Photonic Integration},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100679169,
author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and K. Ohsawa and Y. Mishima and T. Irisawa and M. Oda and T. Tezuka},
title = {(Invited) Growth Process for High Performance of InGaAs MOSFETs},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100679168,
author = {Y. Mishima and T. Kanazawa and H. Kinoshita and E. Uehara and Y. Miyamoto},
title = {InGaAs tri-gate MOSFETs with MOVPE regrown source/drain},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100679167,
author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and A. Kato and M. Fujimatsu and M. Kashiwano and K. Ohsawa and K. Ohashi},
title = {(Invited) InGaAs MOSFET Source Structures Toward High Speed/low Power Applications},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100680432,
author = {入澤寿史 and 小田穣 and 池田圭司 and 守山佳彦 and 三枝栄子 and JevaswanWipakorn and 前田辰朗 and 市川麿 and 長田剛規 and 宮本恭幸 and 秦雅彦 and 手塚勉},
title = {高移動度(111)B面をチャネルに有する三角形状InGaAs-OI nMOSFET},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100679180,
author = {入澤寿史 and 小田穣 and 池田圭司 and 守山佳彦 and 三枝栄子 and JevaswanWipakorn and 前田辰朗 and 市川麿 and 長田剛規 and 宮本恭幸 and 秦雅彦 and 手塚勉},
title = {MOVPE再成長により形成した(111)B面を有する高移動度三角形状InGaAs-OI nMOSFET},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100693227,
author = {大石敏之 and 山口裕太郎 and 大塚浩志 and 山中宏治 and 野上洋一 and 福本宏 and 宮本恭幸},
title = {GaNショットキーバリアダイオードの温度依存性モデル},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100693225,
author = {山口裕太郎 and 大石敏之 and 大塚浩志 and 山中宏治 and TeoKoonHoo and 宮本恭幸},
title = {GaN HEMTの過渡応答バイアス依存性によるトラップ解析},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100679181,
author = {三嶋裕一 and 金澤徹 and 木下治紀 and 上原英治 and 宮本恭幸},
title = {再成長ソース/ドレインを有するInGaAsチャネルトライゲートMOSFET},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100679179,
author = {入澤寿史 and 小田穣 and 池田圭司 and 守山佳彦 and 三枝栄子 and JevaswanWipakorn and 前田辰朗 and 市川麿 and 長田剛規 and 宮本恭幸 and 秦雅彦 and 手塚勉},
title = {MOVPE再成長により形成した(111)B面を有する高移動度三角形状InGaAs-OI nMOSFET},
booktitle = {},
year = 2014,
}
@inproceedings{CTT100679178,
author = {金澤徹 and 三嶋裕一 and 木下治紀 and 上原英治 and 宮本恭幸},
title = {MOVPE再成長ソース/ドレインを有するInGaAsトライゲートMOSFET},
booktitle = {IEICE technical report},
year = 2014,
}
@inproceedings{CTT100679165,
author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and A. Kato and K. Ohsawa and M. Oda and T. Irisawa and T. Tezuka},
title = {Heavily doped epitaxially grown source in InGaAs MOSFET for high drain current density},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100664543,
author = {雨宮智宏 and 金澤 徹 and 石川 篤 and カン ジュンヒョン and 西山伸彦 and 宮本恭幸 and 田中拓男 and 荒井滋久},
title = {メタマテリアルを用いたInP系プラットフォームにおける透磁率制御},
booktitle = {IEICE Technical Report},
year = 2013,
}
@inproceedings{CTT100679166,
author = {T. Irisawa and M. Oda and K. Ikeda and Y. Moriyama and E. Mieda and W. Jevasuwan and T. Maeda and O. Ichikawa and T. Osada and M. Hata and Y. Miyamoto and T. Tezuka},
title = {High Electron Mobility Triangular InGaAs-OI nMOSFETs with (111)B Side Surfaces Formed by MOVPE Growth on Narrow Fin Structures},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100676854,
author = {Yuki Atsumi and N. Taksatorn and N. Nishiyama and Y. Miyamoto and S.Arai},
title = {Miniaturization of exposure area for electron beam lithography using proximity effect correction toward Si optical circuits},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100654650,
author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and Seiji Myoga and JoonHyun Kang and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and Takuo Tanaka and SHIGEHISA ARAI},
title = {(Invited) Photonic metamaterials in semiconductor optical devices},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100678939,
author = {K. Ohsawa and A. Kato and T. Sagai and T. Kanazawa and E. Uehara and Y. Miyamoto},
title = {Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100791463,
author = {山口 裕太郎 and 林 一夫 and 大石 敏之 and 大塚 浩志 and 山中 宏治 and 宮本恭幸},
title = {C-10-1 ソースフィールドプレートGaN HEMTのドレインソース間容量とドレイン抵抗のトレードオフの解析(C-10.電子デバイス,一般セッション)},
booktitle = {電子情報通信学会ソサイエティ大会講演論文集},
year = 2013,
}
@inproceedings{CTT100679176,
author = {宮本恭幸 and 金澤徹},
title = {InGaAs MOSFETの現状と将来展望},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100679174,
author = {柏野壮志 and 行待篤志 and 宮本恭幸},
title = {急峻なSS特性の為のInGaAs/InP超格子FETにおけるキャリア濃度依存性},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100679172,
author = {大澤一斗 and 加藤淳 and 佐賀井健 and 金澤徹 and 上原英治 and 宮本恭幸},
title = {高電流密度化に向けたInPソースを有するIII-V-OI InGaAs MOSFETのチャネル厚依存性},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100679164,
author = {M. Kashiwano and A. Yukimachi and Y. Miyamoto},
title = {Dependence of the Carrier Concentration in InGaAs/InP Superlattice-based FETs with a Steep Subthreshold Slope},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100678948,
author = {Y. Yamaguchi and K. Hayashi and T. Oishi and H. Otsuka and K. Yamanaka and Y. Miyamoto},
title = {Analysis on trade-off between drain resistance and drain-source capacitance of source field plate GaN HEMT},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100678944,
author = {M. Oda and T. Irisawa and E. Mieda and Y. Kurashima and H. Takagi and W. Jevasuwan and T. Maeda and O. Ichikawa and T. Ishihara and T. Osada and Y. Miyamoto and T. Tezuka},
title = {Suppression of short channel effects in accumulation-type UTB-InGaAs-OI nMISFETs with raised S/D fabricated by gate-last process},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100678936,
author = {Y. Miyamoto},
title = {InGaAs channel MOSFET for high-speed/low-power application},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100653652,
author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and Seiji Myoga and Eijun Murai and Takahiko Shindo and J. Kang and Nobuhiko Nishiyama and Yasuyuki Miyamoto and Takuo Tanaka and Shigehisa Arai},
title = {Electrically-driven Permeability-controlled Optical Modulator using Mach-Zehnder Interferometer with Metamaterial},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100659719,
author = {A. Kato and T. Kanazawa and Eiji Uehara and Y. Yonai and Y. Miyamoto},
title = {Sub-50-nm InGaAs MOSFET with n-InP source on Si substrate},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100659773,
author = {宮本 恭幸},
title = {超高速トランジスタ技術の現状と展望},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100659774,
author = {宮本恭幸},
title = {東工大の微細加工プラットフォームにおける支援事例},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100659775,
author = {加藤淳 and 米内義晴 and 金澤徹 and 宮本恭幸},
title = {Si 基板上 InGaAs-MOSFET の微細化に関する研究},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100648390,
author = {雨宮智宏 and 金澤徹 and 石川篤 and 明賀聖慈 and 村井英淳 and 進藤隆彦 and 姜晙炫 and 西山伸彦 and 宮本恭幸 and 田中拓男 and 荒井滋久},
title = {微細金属構造をもつ導波路型光デバイスにおける相互作用距離の解析},
booktitle = {第60回応用物理学関係連合講演会},
year = 2013,
}
@inproceedings{CTT100659771,
author = {宮本 恭幸 and 藤松 基彦},
title = {GaAsSb/InGaAs 縦型トンネル FET},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100659772,
author = {佐賀井 健 and 上原 英治 and 大澤 一斗 and 宮本 恭幸},
title = {n-InP ソースを持つT ゲート構造 InGaAs-MOSFET の高周波特性},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100645875,
author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and Seiji Myoga and Eijun Murai and Takahiko Shindo and J. Kang and Nobuhiko Nishiyama and Yasuyuki Miyamoto and Takuo Tanaka and Shigehisa Arai},
title = {Permeability-controlled Optical Modulator with Tri-gate Metamaterial},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100659770,
author = {宮本恭幸},
title = {微細加工ナノプラットフォームコンソーシアムによる設備共用の取り組み},
booktitle = {},
year = 2013,
}
@inproceedings{CTT100659769,
author = {宮本恭幸 and 金澤徹},
title = {MOSFET低電圧化の為のInGaAs チャネル},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100659716,
author = {Y. Yamaguchi and K. Hayashi and T. Oishi and H. Otsuka and T. Nanjo and K. Yamanaka and M. Nakayama and Y. Miyamoto},
title = {Simulation study and reduction of reverse gate leakage current for GaN HEMTs},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100659714,
author = {M. Kashiwano and J. Hirai and S. Ikeda and M. Fujimatsu and Y. Miyamoto},
title = {High Open Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor using Heavily Doped Drain Region and Narrow Channel Mesa},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100639796,
author = {雨宮智宏 and 金澤徹 and 石川篤 and 明賀聖慈 and 村井英淳 and 進藤隆彦 and 姜晙炫 and 西山伸彦 and 宮本恭幸 and 田中拓男 and 荒井滋久},
title = {透磁率の制御によるInP 系導波路型光変調器},
booktitle = {第73回秋季応用物理学会学術講演会},
year = 2012,
}
@inproceedings{CTT100659768,
author = {藤松基彦 and 宮本恭幸},
title = {GaAsSb/InGaAs ヘテロ接合を用いた縦型トンネル FET における サブスレッショルドスロープの改善},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100659767,
author = {加藤淳 and 米内義晴 and 金澤徹 and 宮本恭幸},
title = {Si 基板上 InGaAs-MOSFET の微細化に関する研究},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100659766,
author = {柏野壮志 and 平井準 and 池田俊介 and 藤松基彦 and 宮本恭幸},
title = {半導体ドレイン層及び狭チャネルメサ幅による縦型 InGaAs チャネル MISFET の高電圧利得化},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100659765,
author = {佐賀井健 and 米内義晴 and 宮本恭幸},
title = {InGaAs チャネル MOSFET の EOT 削減による 伝達コンダクタンス向上},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100659764,
author = {田中 啓史 and 宮本恭幸},
title = {55 nm 幅エミッタInP HBT および電流密度とエミッタ幅の関係},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100659763,
author = {大石敏之 and 林一夫 and 佐々木肇 and 山口裕太郎 and 大塚浩志 and 山中宏治 and 中山正敏 and 宮本恭幸},
title = {トランジスタ動作時における GaN HEMT ゲートリークのデバイスシミュレーションによる解析},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100659713,
author = {T. Oishi and K. Hayashi and Y. Yamaguchi and H. Otsuka and K. Yamanaka and M. Nakayama and Y. Miyamoto},
title = {Mechanism study of gate leakage current for AlGaN/GaN HEMT structure under high reverse bias by TSB model and TCAD simulation},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100659707,
author = {Y. Yamaguchi and K. Hayashi and T. Oishi and H. Otsuka and K. Yamanaka and M. Nakayama and Y. Miyamoto},
title = {Analysis on trade-off between electric field and gate-drain capacitance for GaN HEMT by T-CAD simulation},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100659705,
author = {M. Fujimatsu and H. Saito and Y. Miyamoto},
title = {71 mV/dec of Sub-Threshold Slope in Vertical Tunnel Field-Effect Transistors with GaAsSb/InGaAs Heterostructure},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100659706,
author = {K. Tanaka and Y. Miyamoto},
title = {InP HBT with 55-nm-wide Emitter and Relationship between Emitter Width and Current Density},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100791532,
author = {山口 裕太郎 and 林 一夫 and 大石 敏之 and 大塚 浩志 and 小山 英寿 and 加茂 宣卓 and 山中 宏治 and 中山 正敏 and 宮本恭幸},
title = {C-10-5 GaN HEMTの電界とゲートドレイン間容量のトレードオフとPAEへの影響についてのシミュレーション解析(C-10. 電子デバイス,一般セッション)},
booktitle = {電子情報通信学会ソサイエティ大会講演論文集},
year = 2012,
}
@inproceedings{CTT100642429,
author = {柏野壮志 and 平井準 and 池田俊介 and 藤松基彦 and 宮本恭幸},
title = {半導体ドレイン層及び狭チャネルメサ幅による縦型InGaAsチャネルMISFETの高電圧利得化},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100642418,
author = {宮本恭幸 and 米内義晴 and 金澤徹},
title = {エピタキシャル成長ソースによるInGaAsMOSFETの高電流密度化},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100642425,
author = {宮本 恭幸 and 米内義晴 and 金澤徹},
title = {エヒ?タキシャル成長ソースによる InGaAs MOSFET の高電流密度化},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100642426,
author = {米内義晴 and 金澤徹 and 池田俊介 and 宮本恭幸},
title = {InPエッチング異方性による微細InGaAsチャネルMOSFET},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100642427,
author = {山口裕太郎 and 大石敏之 and 大塚浩志 and 山中宏治 and 南條拓真 and 中山正敏 and 平野嘉仁 and 宮本恭幸},
title = {デバイスシミュレーションによるGaN HEMTのゲートリークの解析},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100642428,
author = {柏野壮志 and 平井準 and 池田俊介 and 藤松基彦 and 宮本恭幸},
title = {GaN HEMT のソース・ドレイン間容量のデバイスシミュレーションによる解析},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100642424,
author = {宮本恭幸 and 山田真之 and 内田建},
title = {InGaAs MOSFETにおけるソース充電時間の検討},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100642423,
author = {宮本恭幸 and 米内義晴 and 金澤徹},
title = {InGaAs MOSFETの高電流密度化},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100642380,
author = {Jun Hirai and Tomoki Kususaki and Shunsuke Ikeda and YASUYUKI MIYAMOTO},
title = {Vertical InGaAs MOSFET with HfO2 gate},
booktitle = {},
year = 2012,
}
@inproceedings{CTT100642417,
author = {宮本恭幸 and 米内義晴 and 金澤徹},
title = {InGaAs MOSFETの高電流密度化},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100642377,
author = {YASUYUKI MIYAMOTO and Hisashi Saito and Toru Kanazawa},
title = {High-current-density InP ultrafine devices for high-speed operation},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100642422,
author = {藤松基彦 and 齋藤尚史 and 宮本恭幸},
title = {GaAsSb/InGaAsヘテロ接合を用いた縦型トンネルFETの作製・評価},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100628829,
author = {T. Kanazawa and R. Terao and S. Ikeda and Y. Miyamoto},
title = {MOVPE-regrown source/drain regions for III-V MOSFETs with high drain current of 1.28 A/mm},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100628831,
author = {N. Takebe and Y. Miyamoto},
title = {Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO2 Wires},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100628832,
author = {A. Kato and T. Kanazawa and S. Ikeda and Y. Yonai and YASUYUKI MIYAMOTO},
title = {Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with A Back Source Electrode},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100628834,
author = {Y. Yamaguchi and T. Sagai and Y. Miyamoto},
title = {Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100642419,
author = {宮本恭幸 and 金澤徹},
title = {InP系化合物半導体を用いたMOSFETの技術動向},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100642420,
author = {池田俊介 and 金澤徹 and 宮本恭幸},
title = {電子ランチャを持つInGaAs MOSFETにおけるヘテロ障壁高さ依存性},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100642421,
author = {加藤淳 and 金澤徹 and 宮本恭幸},
title = {ソース裏面電極によるInP/InGaAsコンポジットチャネルMOSFETのアクセス抵抗低減},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100791685,
author = {大石 敏之 and 大塚 浩志 and 山中 宏治 and 中山 正敏 and 平野 嘉仁 and 宮本恭幸},
title = {C-10-7 緑色光照射時の等価回路パラメータ測定によるGaN HEMTのトラップ解析(C-10.電子デバイス,一般セッション)},
booktitle = {電子情報通信学会ソサイエティ大会講演論文集},
year = 2011,
}
@inproceedings{CTT100619805,
author = {山口裕太郎 and 佐賀井健 and 宮本恭幸},
title = {基板転写プロセスを用いたSi基板上InP/InGaAs SHBTの作製},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100619806,
author = {武部直明 and 宮本恭幸},
title = {InP/InGaAs DHBT におけるSiO2細線埋め込みによるベースコレクタ間容量の削減},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100619803,
author = {松本 豊 and 齋藤尚史 and 宮本恭幸},
title = {縦型InGaAs MIS-FETのソース寄生容量の削減},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100619802,
author = {藤松基彦 and 齋藤尚史 and 楠崎智樹 and 松本 豊 and 平井 準 and 宮本恭幸},
title = {GaAsSb/InGaAsヘテロ接合を用いた縦型トンネルFETに関する研究},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100619804,
author = {金澤 徹 and 寺尾 良輔 and 山口 裕太郎 and 池田 俊介 and 米内 義晴 and 加藤 淳 and 宮本 恭幸},
title = {裏面電極を有するⅢ－Ⅴ族量子井戸型チャネルMOSFET},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100642378,
author = {Motohiko Fujimatsu and Hisashi Saito and YASUYUKI MIYAMOTO},
title = {GaAsSb/InGaAs vertical tunnel FET with a 25 nm-wide channel mesa structure},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100642379,
author = {Yosiharu Yonai and Toru Kanazawa and Shunsuke Ikeda and YASUYUKI MIYAMOTO},
title = {High Drain Current (>2A/mm) InGaAs channel MOSFET at VD=0.5V with Shrinkage of Channel Length by InP Anisotropic Etching},
booktitle = {},
year = 2011,
}
@inproceedings{CTT100791071,
author = {Matsumoto, Y. and Saito, H. and YASUYUKI MIYAMOTO},
title = {Reduction of source parasitic capacitance in vertical InGaAs MISFET},
booktitle = {Conference Proceedings - International Conference on Indium Phosphide and Related Materials},
year = 2011,
}
@inproceedings{CTT100619798,
author = {Chien-I Kuo and Wee Chin Lim and Heng-Tung Hsu and Chin-Te Wang and Li-Han Hsu and Faiz Aizad and Guo-Wei Hung and Yasuyuki Miyamoto and Edward Yi Chang},
title = {Bonding Temperature Effect on the Performance of Flip Chip Assembled 150nm mHEMT Device on Organic Substrate},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100619797,
author = {Y. Miyamoto and H. Saito and T. Kanazawa},
title = {Submicron-channel InGaAs MISFET with epitaxially grown source},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100612624,
author = {Toru Kanazawa and Ryousuke Terao and Yuutarou Yamaguchi and Shunsuke Ikeda and Yosiharu Yonai and YASUYUKI MIYAMOTO},
title = {InP/InGaAs MOSFET with Back-Electrode Structure Bonded on Si Substrate Using a BCB Adhesive Layer},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100612623,
author = {寺尾良輔 and 金澤徹 and 池田俊介 and 米内義晴 and 加藤淳 and 宮本恭幸},
title = {Al2O3ゲート絶縁膜および再成長ソースを有するサブミクロンInP/InGaAs n-MOSFET},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100612622,
author = {金澤徹 and 寺尾良輔 and 山口裕太郎 and 池田俊介 and 米内義晴 and 加藤淳 and 宮本恭幸},
title = {Si基板上貼付された裏面電極付InP/InGaAs MOSFET},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100791524,
author = {宮本恭幸},
title = {CI-2-2 HMET,HBTによるTHz波源(CI-2.テラヘルツ波源デバイスの現状と展望,依頼シンポジウム,ソサイエティ企画)},
booktitle = {電子情報通信学会ソサイエティ大会講演論文集},
year = 2010,
}
@inproceedings{CTT100610518,
author = {T. Kanazawa and K. Wakabayashi and H. Saito and R. Terao and T. Tajima and S. Ikeda and Y. Miyamoto and K. Furuya},
title = {Submicron InP/InGaAs composite channel MOSFETs with selectively regrown n+-source/drain buried in channel undercut},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100610522,
author = {Y. Miyamoto and T. Kanazawa and H. Saito},
title = {InGaAs MISFET with epitaxially grown source},
booktitle = {InGaAs MISFET with epitaxially grown source},
year = 2010,
}
@inproceedings{CTT100610523,
author = {H. Saito and Y. Miyamoto and K. Furuya},
title = {Vertical InGaAs FET with hetero-launcher and undoped channel},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100610520,
author = {C.-T. Wang and C.-I. Kuo and W.-C. Lim and L.-H. Hsu and H.-T. Hsu and Y. Miyamoto and E.Y. Chang and S.-P. Tsai and Y.-S. Chiu},
title = {An 80 nm In0.7Ga0.3As MHEMT with Flip-Chip Packaging for W-Band Low Noise Applications},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100610521,
author = {Faiz Aizad and Heng-Tung Hsu and Chien-I Kuo and Chien-Ying Wu and Edward Yi Chang and Yasuyuki Miyamoto and Guo-Wei Huang and Yu-Lin Chen and Yu-Sheng Chiu},
title = {Investigation Logic Performances of 80-nm HEMTs for InxGa1?xAs},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100610517,
author = {M. Yamada and T. Uesawa and Y. Miyamoto and K. Furuya},
title = {Deviation from Proportional Relationship between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operating at High Current Density},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100610494,
author = {寺尾良輔 and 金澤 徹 and 齋藤尚史 and 若林和也 and 池田俊介 and 宮本恭幸 and 古屋一仁},
title = {Al2O3ゲート絶縁膜を用いたInP/InGaAsチャネル n-MOSFETの電気特},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100610506,
author = {H. Saito and Y. Miyamoto and K. Furuya},
title = {Selective undercut etching for ultra narrow mesa structure in vertical InGaAs channel MISFET},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100610505,
author = {金澤 徹 and 若林和也 and 齋藤尚史 and 寺尾良輔 and 田島智宣 and 池田俊介 and 宮本恭幸 and 古屋一仁},
title = {III-V族サブミクロンチャネルを有する高移動度MOSFET},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100610497,
author = {小林 嵩 and 鈴木裕之 and 武部直明 and 宮本恭幸 and 古屋一仁},
title = {SiO2細線埋め込みInP/InGaAs DHBTの作製},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100610496,
author = {齋藤尚史 and 楠崎智樹 and 松本 豊 and 宮本恭幸 and 古屋一仁},
title = {縦型InGaAs チャネルMISFET の極微細メサに向けた選択的ウェットエッチング},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100610495,
author = {磯谷優治 and 小林 嵩 and 山口裕太郎 and 宮本恭幸 and 古屋一仁},
title = {Si基板上へ転写したInP系HBTの動作},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100610493,
author = {若林和也 and 金澤 徹 and 齋藤尚史 and 寺尾良輔 and 池田俊介 and 宮本恭幸 and 古屋一仁},
title = {再成長ソースを有するサブミクロンInP/InGaAs nMOSFETの電流電圧特性},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100597640,
author = {金澤徹 and 若林和也 and 齋藤尚史 and 寺尾良輔 and 田島智宣 and 池田俊介 and 宮本恭幸 and 古屋一仁},
title = {Al2O3ゲート絶縁膜を用いたInP/InGaAsコンポジットチャネルMOSFET},
booktitle = {電子情報通信学会技術研究報告 電子デバイス},
year = 2010,
}
@inproceedings{CTT100610527,
author = {宮本恭幸},
title = {テラヘルツ帯におけるトランジスタ},
booktitle = {},
year = 2010,
}
@inproceedings{CTT100610504,
author = {山田真之 and 上澤岳史 and 宮本恭幸 and 古屋一仁},
title = {HBTにおける高電流密度動作時エミッタ充電時間の電流反比例特性からの逸脱},
booktitle = {電子情報通信学会技術研究報告 電子デバイス},
year = 2010,
}
@inproceedings{CTT100598422,
author = {YASUYUKI MIYAMOTO},
title = {Vertical InGaAs FET with hetero-launcher and undoped channel},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100610499,
author = {H. Saito and Y. Miyamoto and K. Furuya},
title = {Fabrication of vertical InGaAs channel MISFET with heterostructure launcher and undoped channel},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100610500,
author = {K. Wakabayashi and T. Kanazawa and H. Saito and R. Terao and S. Ikeda and Y. Miyamoto and K. Furuya},
title = {InP/In0.53Ga0.47As composite channel n-MOSFETwith heavily dopedregrown source/drain structure},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100610498,
author = {YASUYUKI MIYAMOTO},
title = {InGaAs/InP MISFET},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100591555,
author = {Toru Kanazawa and Hisashi Saito and Kazuya Wakabayashi and Ryousuke Terao and Tomonori Tajima and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
title = {Fabrication of InP/InGaAs Undoped Channel MOSFET with Selectively Regrown N+-InGaAs Source Region},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100610502,
author = {武部直明 and 山下浩明 and 高橋新之助 and 宮本恭幸 and 古屋一仁},
title = {SiO2細線埋込InP系HBTにおけるCBr4を使ったin-situエッチング},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100610491,
author = {若林和也 and 金澤 徹 and 齋藤尚史 and 田島智宣 and 寺尾良輔 and 宮本恭幸 and 古屋一仁},
title = {「再成長ソースを有するアンドープチャネルInP/InGaAs MOSFETの電流特性},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100610490,
author = {齋藤尚史 and 楠崎智樹 and 松本 豊 and 宮本恭幸 and 古屋一仁},
title = {ヘテロランチャと真性チャネルを有する縦型InGaAs-MISFET の高駆動能力動作},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100610488,
author = {楠崎智樹 and 齋藤尚史 and 松本 豊 and 宮本恭幸 and 古屋一仁},
title = {縦型InGaAs-MISFETの試作},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100591554,
author = {若林 和也 and 金澤 徹 and 齋藤 尚史 and 田島 智宣 and 寺尾 良輔 and 宮本 恭幸 and 古屋 一仁},
title = {再成長ソースを有するアンドープチャネルInP/InGaAs MOSFETの電流特性},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100610492,
author = {山田真之 and 上澤岳史 and 宮本恭幸 and 古屋一仁},
title = {HBTにおける超高速動作時エミッタ充電時間の理論的解析},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100591551,
author = {金澤徹 and 齋藤尚史 and 若林和也 and 田島智宣 and 宮本恭幸 and 古屋一仁},
title = {MOVPE再成長n+ソースを有するⅢ-Ⅴ族高移動度チャネルMOSFET},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100598420,
author = {Takafumi Uesawa and Masayuki Yamada and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
title = {Monte Carlo Analysis of Base Transit Times of InP/Gaines Heterojunction Bipolar Transistors with Ultrathin Bases},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100598419,
author = {YASUYUKI MIYAMOTO and Hiroaki Yamashita and Naoaki Takebe and KAZUHITO FURUYA},
title = {In-situ Etching in MOVPE for Thin Collector of InP HBT with Buried SiO2 Wire},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100610503,
author = {武部直明 and 山下浩明 and 高橋新之助 and 齋藤尚史 and 小林 嵩 and 宮本恭幸 and 古屋一仁},
title = {SiO2細線埋込InP系HBTにおけるCBr4を使ったIn-situエッチング},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100598417,
author = {YASUYUKI MIYAMOTO and Shinnosuke Takahashi and Takashi Kobayashi and Hiroyuki Suzuki and KAZUHITO FURUYA},
title = {Evaluation of collector current spreading of InGaAs SHBT with 75-nm-thick collector},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100598415,
author = {YASUYUKI MIYAMOTO and Toru Kanazawa and Hisashi Saito and KAZUHITO FURUYA},
title = {InGaAs/InP MISFET with epitaxially grown source},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100583670,
author = {Toru Kanazawa and KAZUHITO FURUYA and YASUYUKI MIYAMOTO and Hisashi Saito and kazuya wakabayashi and Tomonori Tajima},
title = {InP/InGaAs-channel MOSFET with MOVPE Selective Regrown Source},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100576971,
author = {Chien-I Kuo and Heng-Tung Hsu and Chung Li and Chien Ying Wu and Edward Yi Chang and YASUYUKI MIYAMOTO and Y.-L. Chen and D. Biswas},
title = {A 40-nm-Gate InAs/InGaAs Composite-Channel HEMT with 2200 mS/mm and 500-GHz fT},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100576790,
author = {H. Saito and Y. Miyamoto and K. Furuya},
title = {Vertical InGaAs MOSFET with Hetero-Launcher and Undoped Channel},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100576966,
author = {Edward Yi Chang and Chien-I Kuo and Heng-Tung Hsu and YASUYUKI MIYAMOTO and Chia Ta Chang and Chien Ying Wu},
title = {Evaluation of InAs QWFET for Low Power Logic applications},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100610501,
author = {齋藤尚史 and 楠崎智樹 and 松本豊 and 宮本恭幸 and 古屋一仁},
title = {ヘテロランチャと真性チャネルを有する縦型InGaAs-MOSFET},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100583674,
author = {金澤徹 and 古屋一仁 and 宮本恭幸 and 齋藤尚史 and 若林和也 and 田島智宣},
title = {MOVPE再成長ソースを有するIII-V族MOSFETの電流特性},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100576984,
author = {宮本恭幸 and 金澤徹},
title = {III-V ナノデバイス},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100576982,
author = {上澤岳史 and 山田真之 and 宮本恭幸 and 古屋一仁},
title = {超薄層ベースInP/GaInAs HBTの組成傾斜によるベース走行時間短縮},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100576981,
author = {峯崎純太郎 and 宮本恭幸 and 古屋一仁},
title = {InP/GaInAs位相シフタによる電子波回折観測可能性の向上},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100576963,
author = {YASUYUKI MIYAMOTO},
title = {InGaAs MISFET with hetero-laucher},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100576791,
author = {齋藤尚史 and 金澤徹 and 宮本恭幸 and 古屋一仁},
title = {ヘ テロランチャと真性チャネルを有する縦型InGaAs-MOSFETの作製},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100576972,
author = {上澤岳史 and 山田真之 and 宮本恭幸 and 古屋一仁},
title = {超薄層ベースInP 系HBT におけるGraded Base によるベース走行時間短縮},
booktitle = {},
year = 2009,
}
@inproceedings{CTT100565411,
author = {宮本 恭幸 and 長谷川 貴史 and 齋藤 尚史 and 古屋 一仁},
title = {RF Characteristics of Schottky-Gate-Controlled Hot Electron Transistor},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100583676,
author = {金澤徹 and 古屋一仁 and 宮本恭幸 and 齋藤尚史 and 若林和也 and 田島智宣},
title = {Ⅲ-Ⅴ族高駆動能力MOSFETへ向けたn+-InGaAsソース/ドレイン層の横方向埋め込み成長},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100576793,
author = {齋藤尚史 and 孟 伶我 and 宮本 恭幸 and 古屋 一仁},
title = {絶縁ゲート制御型ホットエレク トロントランジスタのゲート制御能力向上},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100565410,
author = {T. Kanazawa and H. Saito and K. Wakabayashi and Y. Miyamoto and K. Furuya},
title = {Lateral Buried Growth of N+-InGaAs Source/Drain Region to Undercut InGaAs Channel Structure for High Drive Current N-type MOSFET},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100565409,
author = {C. Y. Chang and H. T. Hsu and E. Y. Chang and C. I. Kuo and Y. Miyamoto},
title = {InAs-Channel HEMTs for Ultra- Low-Power LNA Applications},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100576980,
author = {高橋新之助 and 山下浩明 and 小林嵩 and 磯谷優治 and 鈴木裕之 and 宮本恭幸 and 古屋一仁},
title = {EB露光により作製したエミッタ幅200nmのInP/InGaAs SHBT},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100576977,
author = {上澤岳史 and 宮本恭幸 and 古屋一仁},
title = {InP/InGaAs HBTベース層におけるプラズモン散乱のモンテカルロ解析},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100576789,
author = {H. Saito and Y. Miyamoto and K. FUruya},
title = {Increment of voltage gain of InP/InGaAs Hot Electron Transistors controlled by insulated gate},
booktitle = {Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International},
year = 2008,
}
@inproceedings{CTT100563450,
author = {西村 想 and 荒井 剛 and 宮本恭幸 and 古屋一仁},
title = {弾道電子放出顕微鏡を利用した電子波回折観測の可能性},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100565408,
author = {Hisashi Saito and Takahiro Hino and Yasuyuki Miyamoto and Kazuhito Furuya},
title = {Hot electron transistor controlled by insulated gate with 70nm-wide emitter},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100576962,
author = {Chien-I Kuo and Edward Yi Chang and Chia-Yuan Chang and Heng-Tung Hsu and YASUYUKI MIYAMOTO},
title = {Investigation of impact ionization from InXGa1-XAs to InAs channel HEMTs for high speed and low power applications},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100563452,
author = {山田朋宏 and 上澤岳史 and 古屋一仁 and 宮本恭幸},
title = {ゲート制御ホットエレクトロントランジスタのバリスティックモデル解析},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100576792,
author = {齋藤尚史 and 孟 伶我 and 宮本恭幸 and 古屋一仁},
title = {絶縁ゲート制御型ホットエレクト ロントランジスタの電圧利得向上},
booktitle = {},
year = 2008,
}
@inproceedings{CTT100549527,
author = {Shinnosuke Takahashi and Tsukasa Miura and Hiroaki Yamashita and Yasuyuki Miyamoto and Kazuhito Furuya},
title = {DC Characteristics of Heterojunction Bipolar Transistor with Buried SiO2 Wires in Collector},
booktitle = {},
year = 2007,
}
@inproceedings{CTT100563449,
author = {山田朋宏 and 古屋一仁 and 宮本恭幸},
title = {先端ノンドープ構造ホットエレクトロンエミッタ充電時間解析},
booktitle = {},
year = 2007,
}
@inproceedings{CTT100549526,
author = {Hiroaki Yamashita and Tsukasa Miura and Shinnosuke Takahashi and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
title = {Fabrication of 200-nm-thick SiO2 wires buried in InP for reduction in collector capacitance in InP/InGaAs DHBT},
booktitle = {},
year = 2007,
}
@inproceedings{CTT100534008,
author = {N. Kashio and K. Kurishima and Y. Fukai and S. Yamahata and Y. Miyamoto},
title = {Emitter layer design for highly reliable and high-speed InP HBTs},
booktitle = {},
year = 2007,
}
@inproceedings{CTT100534007,
author = {T. Hino and A. Suwa and T. Hasegawa and H. Saito and M. Oono and Y. Miyamoto and K. Furuya},
title = {Fabrication of hot electron transistors controlled by insulated gate},
booktitle = {},
year = 2007,
}
@inproceedings{CTT100534013,
author = {高橋新之助 and 三浦司 and 山下浩明 and 宮本恭幸 and 古屋一仁},
title = {コレクタ層内にSiO2細線を埋め込んだHBTのDC特性},
booktitle = {応用物理学会},
year = 2007,
}
@inproceedings{CTT100534011,
author = {山下浩明 and 三浦司 and 高橋新之助 and 宮本恭幸 and 古屋一仁},
title = {SiO2細線埋め込みHBTにおけるコレクタ容量削減のための200nm厚細線},
booktitle = {応用物理学会},
year = 2007,
}
@inproceedings{CTT100534010,
author = {齋藤尚史 and 諏訪輝 and 長谷川貴史 and 日野高宏 and 大野真也 and 五十嵐満彦 and 宮本恭幸 and 古屋一仁},
title = {絶縁ゲートにより制御するホットエレクトロントランジスタの走行層幅微細化},
booktitle = {電気学会デバイス研究会},
year = 2007,
}
@inproceedings{CTT100534012,
author = {日野高宏 and 諏訪輝 and 齋藤尚史 and 宮本恭幸 and 古屋一仁},
title = {絶縁ゲートホットエレクトロントランジスタのエミッタ微細化},
booktitle = {応用物理学会},
year = 2007,
}
@inproceedings{CTT100534009,
author = {諏訪輝 長谷川貴史 日野高宏 宮本恭幸 古屋 一仁},
title = {絶縁ゲートにより制御するホットエレクトロントランジスタの作製},
booktitle = {電子情報通信学会電子デバイス研究会},
year = 2006,
}
@inproceedings{CTT100549524,
author = {Chia-Yuan Chang and Edward Yi Chang and Yi-Chung Lien and Yasuyuki Miyamoto and Chien-I Kuo and Sze-Hung Cheng and Li-Hsin Chu},
title = {High-PerformanceIn0.52Al0.48As/In0.6Ga0.4AsPower Metamorphic HEMT for Ka-Band Applications,},
booktitle = {},
year = 2006,
}
@inproceedings{CTT100522210,
author = {Y. Miyamoto and R. Nakagawa and I. Kashima and A. Suwa and N. Machida and K. Furuya},
title = {25-nm-wide emitter for InP hot electron transistors without base layer},
booktitle = {International Topical Workshop "Tera- and Nano-Devices:Physics and Modeling"},
year = 2006,
}
@inproceedings{CTT100522404,
author = {T. Kai and Y. Fukuyama and Y. Miyamoto and K. Furuya and K. Kurishima and S. Yamahata},
title = {Electron Beam Lithography for Non Self-Aligned HBTs with Extremely Narrow Emitter Mesa},
booktitle = {2006 International Microprocesses and Nanotechnology Conference},
year = 2006,
}
@inproceedings{CTT100522403,
author = {五十嵐満彦 and 山田朋宏 and 町田信也 and 宮本恭幸 and 古屋一仁},
title = {ゲート制御ホットエレクトロントランジスタの実験構造を考慮したモンテカルロ解析},
booktitle = {応用物理学会学術講演会},
year = 2006,
}
@inproceedings{CTT100522402,
author = {諏訪 輝 and 長谷川貴史 and 日野高宏 and 宮本恭幸 and 古屋一仁},
title = {新ホットエレクトロントランジスタの室温動作にむけた新構造の提案},
booktitle = {応用物理学会学術講演会},
year = 2006,
}
@inproceedings{CTT100522401,
author = {甲斐敬紹 and 福山義人 and 宮本恭幸 and 古屋一仁},
title = {狭メサHBTの為のノンセルフアラインメント電子ビーム露光},
booktitle = {応用物理学会学術講演会},
year = 2006,
}
@inproceedings{CTT100522385,
author = {宮本恭幸 and 石田昌司 and 山本徹 and 三浦司 and 古屋一仁},
title = {MOVPEによるInP中のSiO2細線埋め込み成長とそのHBTコレクタ容量低減への応用},
booktitle = {電子情報通信学会電子デバイス研究会},
year = 2006,
}
@inproceedings{CTT100522209,
author = {Y. Miyamoto and I. Kashima and A. Suwa and K. Furuya},
title = {Increase in current density at 25-nm-wide emitter for InP hot-electron transistors without base layer},
booktitle = {64th Annual Device Research Conference},
year = 2006,
}
@inproceedings{CTT100522208,
author = {Y. Miyamoto and M. Ishida and T. Yamamoto and T. Miura and K. Furuya},
title = {InP Buried growth of SiO2 wires toward reduction of collector},
booktitle = {13th International Conference on Metalorganic Vapor Phase Epitaxy},
year = 2006,
}
@inproceedings{CTT100522207,
author = {N. Machida and Y. Miyamoto and K. Furuya},
title = {Minimum emitter charging time for heterojunction bipolar transistors},
booktitle = {The 18th Indium Phosphide and Related Materials Conference},
year = 2006,
}
@inproceedings{CTT100522388,
author = {町田信也 and 五十嵐満彦 and 山田朋宏 and 宮本恭幸 and 古屋一仁},
title = {ゲート制御ホットエレクトロントランジスタのモンテカルロ解析},
booktitle = {応用物理学会学術講演会},
year = 2006,
}
@inproceedings{CTT100522394,
author = {町田信也 and 宮本恭幸 and 古屋一仁},
title = {ヘテロ接合バイポーラトランジスタの最小エミッタ充電時間},
booktitle = {応用物理学会学術講演会},
year = 2006,
}
@inproceedings{CTT100522397,
author = {石田昌司 and 山本 徹 and 三浦 司 and 宮本恭幸 and 古屋一仁},
title = {SiO2細線埋め込み成長によるInP系HBTのコレクタ容量低減の提案},
booktitle = {応用物理学会学術講演会},
year = 2006,
}
@inproceedings{CTT100522393,
author = {鹿嶋一生 and 諏訪 輝 and 古屋一仁 and 宮本恭幸},
title = {ゲートにより制御するホットエレクトロントランジスタにおける電流量の増大},
booktitle = {応用物理学会学術講演会},
year = 2006,
}
@inproceedings{CTT100522381,
author = {鹿嶋一生 and 諏訪 輝 and 宮本恭幸 and 古屋一仁},
title = {ゲートにより制御するホットエレクトロントランジスタにおける電流量の増大},
booktitle = {電子情報通信学会電子デバイス研究会},
year = 2006,
}
@inproceedings{CTT100522383,
author = {町田信也 and 五十嵐満彦 and 山田朋宏 and 宮本恭幸 and 古屋一仁},
title = {ゲートにより制御するホットエレクトロントランジスタの高周波特性予測},
booktitle = {電子情報通信学会電子デバイス研究会},
year = 2006,
}
@inproceedings{CTT100522206,
author = {K. Furuya and N. Machida and R. Nakagawa and I. Kashima and M. Ishida and Y. Miyamoto},
title = {MC simulation and fabrication of ultrafast transistor using ballistic electron in intrinsic semiconductor},
booktitle = {Second Joint International Conference on New Phenomena in Mesoscopic Systems and Surfaces and Interfaces of Mesoscopic Devices},
year = 2005,
}
@inproceedings{CTT100540514,
author = {Y. Miyamoto and R. Nakagawa and I. Kashima and M. Ishida and K. Furuya},
title = {Low leakage gate current of InP transistors with hot electron extracted by attractive potential around i-InP/metal gate},
booktitle = {International Conference on Solid State Devices and Materials},
year = 2005,
}
@inproceedings{CTT100391821,
author = { 鹿嶋一生 and 古屋一仁 and 宮本恭幸 and 中川 亮},
title = {InP系ホットエレクトロントランジスタにおけるエミッタ接地の飽和特性とゲートリーク電流の低減},
booktitle = {応用物理学会},
year = 2005,
}
@inproceedings{CTT100391823,
author = {Y. Miyamoto and R. Nakagawa and I. Kashima and K. Takeuchi and Y. Yamada and T. Fujisaki and M. Ishida and KAZUHITO FURUYA},
title = {25 nm Wide Emitter and Precise Alignment between Gate and Emitter in InP Hot Electron Transistors},
booktitle = {Topical Workshop on Heterostructure Microelectronics},
year = 2005,
}
@inproceedings{CTT100391817,
author = {Y.Miyamoto and R. Nakagawa and K. Takeuchi and Y. Yamada and T. Fujisaki and M. Ishida and K. Furuya},
title = {InP ballistic hot electron transistors with 25 nm wide emitter},
booktitle = {24th Electronic Materials Symposium},
year = 2005,
}
@inproceedings{CTT100391852,
author = {Y. Miyamoto and Y. Watanabe and W. Qiu and K. Furaya},
title = {Analysis of lateral current spreading in collector of submicron HBT},
booktitle = {International Conference on Indium Phosphide and Related},
year = 2005,
}
@inproceedings{CTT100391851,
author = {Y. Miyamoto and M. Ishida and T. Nonaka and T. Yamamoto and K. Furuya},
title = {Tungsten Buried Growth by Using Thin Flow-Liner for Small Collector Capacitance in InP HBT},
booktitle = {International Conference on Indium Phosphide and Related},
year = 2005,
}
@inproceedings{CTT100391820,
author = {宮本恭幸 and 石田昌司 and 野中俊宏 and 山本徹 and 古屋一仁},
title = {InP系HBTコレクタ容量低減の為の金属細線埋込成長における流速増大による表面平坦化},
booktitle = {応用物理学会},
year = 2005,
}
@inproceedings{CTT100391818,
author = {宮本恭幸 and 渡辺康弘},
title = {ディープサブミクロンInP系 HBT},
booktitle = {電気学会},
year = 2005,
}
@inproceedings{CTT100391819,
author = {渡辺康弘 and 邱 偉彬 and 宮本恭幸 and 古屋一仁},
title = {微細HBTのコレクタ中における横方向電流広がりの解析},
booktitle = {応用物理学会},
year = 2005,
}
@inproceedings{CTT100667668,
author = {服部哲也 and 本郷廣生 and 宮本恭幸 and 古屋一仁 and 松沼 健司 and 渡辺正裕 and 浅田雅洋},
title = {電子ビーム露光によるCaF2無機レジスト70nm周期パターニング},
booktitle = {},
year = 1996,
}
@misc{CTT100619795,
author = {宮本恭幸},
title = {極微細ヘテロ接合トランジスタ},
year = 2010,
}
@misc{CTT100595413,
author = {YASUYUKI MIYAMOTO},
title = {GaInAsP/InP Organo-Metallic Vapor Phase Epitaxy (OMVPE) for Quantum Box Lasers},
year = 1988,
}
@misc{CTT100710319,
author = {宮本恭幸 and 山中僚大 and 金澤徹 and 今井 章文 and 柳生 栄治},
title = {半導体装置の製造方法
},
howpublished = {公開特許},
year = 2016,
month = {},
note = {特願2014-174229(2014/08/28), 特開2016-051722(2016/04/11)}
}
@misc{CTT100677655,
author = {宮本恭幸 and 柏野壮志 and 金澤徹},
title = {電界効果トランジスタ},
howpublished = {公開特許},
year = 2014,
month = {},
note = {特願2013-001907(2013/01/09), 特開2014-135359(2014/07/24)}
}
@misc{CTT100665190,
author = {宮本恭幸 and 大石 敏之 and 大塚 浩志 and 山中 宏冶 and 山口 裕太郎 and 中山 正敏 and 今井 章文},
title = {光電気化学装置および半導体装置の製造方法},
howpublished = {公開特許},
year = 2013,
month = {},
note = {特願2012-011185(2012/01/23), 特開2013-149914(2013/08/01)}
}
@misc{CTT100657647,
author = {宮本恭幸 and 米内 義晴 and 金澤徹},
title = {電界効果トランジスタ},
howpublished = {公開特許},
year = 2013,
month = {},
note = {特願2011-165385(2011/07/28), 特開2013-030604(2013/02/07)}
}
@misc{CTT100639691,
author = {宮本恭幸 and 金澤 徹},
title = {電界効果トランジスタ},
howpublished = {公開特許},
year = 2012,
month = {},
note = {特願2010-204769(2010/09/13), 特開2012-060082(2012/03/22)}
}
@misc{CTT100634083,
author = {宮本恭幸 and 齋藤 尚史 and 井田 実 and 山幡 章司},
title = {半導体装置の製造方法},
howpublished = {公開特許},
year = 2011,
month = {},
note = {特願2010-100797(2010/04/26), 特開2011-233617(2011/11/17)}
}
@phdthesis{CTT100595413,
author = {YASUYUKI MIYAMOTO},
title = {GaInAsP/InP Organo-Metallic Vapor Phase Epitaxy (OMVPE) for Quantum Box Lasers},
school = {東京工業大学},
year = 1988,
}