@book{CTT100479080,
  author = {応用物理学会 and 酒井徹志担当部；第10章10.1概説 and 半導体プロセス技術の発展 and 素子形成技術},
  title = {第2版応用物理ハンドブック},
  publisher = {丸善},
  year = 2002,
}

@book{CTT100428443,
  author = {豊田博夫 and 泉勝利 and 酒井徹志 and 井野正行 and 井上靖朗 and 小池恵一 and 崎山恵三 and 武谷健 and 日月鷹治 and 土屋敏章 and 道関隆国 and 吉見信},
  title = {SIMOX LSI 技術},
  publisher = {ハイテクノロジー推進研究所},
  year = 1998,
}

@book{CTT100427483,
  author = {酒井徹志 and 小切間正彦 and 山本庸介 and 荻野俊郎 and 田部道晴 and 前田正彦 and 河合義夫 and 佐藤政明 and 酒井芳男 and 西前仁也 and 清水博文 and 青島孝明 and 伊藤勝彦 and 鈴木道夫},
  title = {超LSIの製造技術（教育用ビデオテープ全５巻とテキスト）},
  publisher = {日刊工業新聞社},
  year = 1990,
}

@book{CTT100427482,
  author = {菅野卓雄 and 永田穣 and 向井久和 and 酒井徹志 and 安斉昭夫 and 樋口久幸 and 宇佐美光雄 and 早坂昭夫 and 鳥谷部達 and 玉置洋一 and 川村雅雄 and 玉木亮 and 本間紀之 and 大塚賢治 and 榎本実},
  title = {超高速バイポーラ・デバイス},
  publisher = {培風館},
  year = 1985,
}

@article{CTT100387897,
  author = {S. Nakajima and S. Nakamura and T. Ueki and T. Sakai},
  title = {Sample preparation techniques for physical analysis of VLSIs},
  journal = {Microelectronics Reliability},
  year = 2004,
}

@article{CTT100387900,
  author = {G. Yamanaka and S. Ohmi and T. Sakai},
  title = {AlON thin films formed by ECR plasma oxidation for high-k gate insulator application},
  journal = {Mat. Res. Soc. Symp. Proc.},
  year = 2004,
}

@article{CTT100387902,
  author = {大理洋征龍 and 山崎崇 and 盛田伸也 and 袴田佳孝 and 大見俊一郎 and 酒井徹志},
  title = {極薄SOI層と素子間分離領域の形成を一体化する新技術：SBSI(Separation by Bonding Si Islands) -Si島とSi基板間の熱酸化-},
  journal = {第65回応用物理学会学術講演会講演予稿集},
  year = 2004,
}

@article{CTT100387940,
  author = {T. Kurose and T. Uchikawa and S. Ohmi and T. Sakai},
  title = {HfOxNy Thin Films Formed by ECR Ar/N2 Plasma Oxidation of HfN Thin Films},
  journal = {The 15th Symposium of The Materials Research Society of Japan},
  year = 2004,
}

@article{CTT100387895,
  author = {S. Ohmi and H. Ohri and T. Yamazaki and M. Sakuraba and J. Murota and T. Sakai},
  title = {Novel SOI Fabrication Process Utilizing the Selective Etching for Si/Ge Stacked Layers: Separation By Bonding Si Islands Technology(SBSI)},
  journal = {Third Internatinal Workshop on New Group Ⅳ (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices},
  year = 2004,
}

@article{CTT100387893,
  author = {T. Sakai and T. Yamazaki and S. Ohmi and S. Morita and H. Ohri and J. Murota and M. Sakuraba and H. Omi and Y. Takahashi},
  title = {Separation by Bonding Si Islands (SBSI) for LSI Applications},
  journal = {International SiGe Technology and Device Meeting(ISTDM 2004)},
  year = 2004,
}

@article{CTT100387899,
  author = {H. Ohri and T. Yamazaki and S. Ohmi and T. Sakai},
  title = {A Study on Selective Etching of SiGe Layers and Electrical Characteristics of MOS Diodes Formed after Selective Etching in SBSI Process},
  journal = {Third Internatinal Workshop on New Group Ⅳ (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices},
  year = 2004,
}

@article{CTT100387894,
  author = {T. Yamazaki and S. Ohmi and S. Morita and H. Ohri and J. Murota and M. Sakuraba and H. Omi and T. Sakai},
  title = {Separation by Bonding Si Islands for Advanced CMOS LSIs},
  journal = {Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices},
  year = 2004,
}

@article{CTT100387892,
  author = {T. Yamazaki and T. Sekikawa and S. Morita and Y. Hakamada and H. Ohri and S. Ohmi and T. Sakai},
  title = {A Study on Selective Etching of SiGe Layers in SiGe/Si Systems for Device Applications},
  journal = {Mat. Res. Soc. Symp. Proc.},
  year = 2004,
}

@article{CTT100387896,
  author = {D. Sasaki and S. Ohmi and M. Sakuraba and J. Murota and T. Sakai},
  title = {Proposal of a Multi-layer channel MOSFET: the application of selective etching for Si/SiGe stacked layers},
  journal = {Applied Surface Science},
  year = 2004,
}

@article{CTT100491081,
  author = {Tetsushi Sakai and S. Ohmi and D. Sasaki and M. Sakuraba and J. Murota},
  title = {A Proposal of Multi-Layer Channel MOSFET:The Application of Selective Etching for Si/Ge Stacked Layers},
  journal = {Abstracts of First Internatinal SiGe Technology and Device Meeting(ISTDM)},
  year = 2003,
}

@article{CTT100479075,
  author = {S. Nakajima and S. Nakamura and K. Kuji and T. Ueki and T. Ajioka and T. Sakai},
  title = {Construction of a cost-effective failure analysis service network microelectronics failure analysis service in Japan},
  journal = {Microelectronics Reliability},
  year = 2002,
}

@article{CTT100479076,
  author = {T.Yamazaki and S.Ohmi and M. Sakuraba and J. Murota and T. Sakai},
  title = {Double-Polysilicon self-aligned HBT with non-selective epitaxial SiGe:C base layer},
  journal = {Second International Workshop on New Group Ⅳ(Si‐Ge‐C)Semiconductors: Control of Properties and Applications to Ultra-high Speed and Opto‐Electronics Devices},
  year = 2002,
}

@article{CTT100444796,
  author = {酒井徹志},
  title = {超高速Si系デバイスの現状と今後の展望},
  journal = {日本学術振興会将来加工技術第１３６委員会合同研究会資料},
  year = 2000,
}

@article{CTT100444797,
  author = {酒井徹志},
  title = {超低エネルギーデバイス（特にSOIデバイス）の現状と展望},
  journal = {RCJ信頼性シンポジウム予稿集},
  year = 2000,
}

@article{CTT100428439,
  author = {Satoshi Nakayama and Tetsushi Sakai},
  title = {The Effect of Nitorogen in a P+ Polysilicon Gate on Boron Penetration through the Gate Oxide},
  journal = {Journal Electrochemical Society},
  year = 1997,
}

@article{CTT100428441,
  author = {s.Nakashima and T. Ohono and S. Nakamura and T. Ueki and T. Tsuchiya and T. Takeda and Tetsushi Sakai},
  title = {Sacrificial Oxidation Techniques of Top Si Layer to Reduce Source-to-Drein Leakage Current in 0.25-μm MOSFETs/SIMOX },
  journal = {proceedings 1996 IEEE International SOI Conference},
  year = 1996,
}

@article{CTT100427524,
  author = {M. Ino and H. Sawada and K. Nishimura and T. Takeda and Y. Kado and H. Inokawa and T. Tsuchiya and Y. Sakakibara and K. Izumi and Tetsushi Sakai},
  title = {0.25um CMOS/SIMOX Gate Array LSI},
  journal = {ISSCC Dig. Tech. Papers},
  year = 1996,
}

@article{CTT100428440,
  author = {Satoshi Nakayama and Tetsushi Sakai},
  title = {Redistribution of in situ doped or Ion-implanted Nitorogen in Polysilicon},
  journal = {Journal Applied Physics},
  year = 1996,
}

@article{CTT100428442,
  author = {Satoshi Nakayama and Tetsushi Sakai},
  title = {The Effect of Nitorogen in P+ Polysilicon Gates on Boron Penetration into Silicon Substrate through the Gate Oxide},
  journal = {Symposium on VLSI Tech. Dig. Tech. Papers},
  year = 1996,
}

@article{CTT100428604,
  author = {M. Urajin and J. Kodate and Y. Kobayashi and S. Konaka and Tetsushi Sakai},
  title = {Very-High fT and fmax Silicon Bipolar Transistors using Ultra-High Performance Super Self-Aligned Process Technology for Low-Energy and Ultra-High Speed LSI's},
  journal = {International Electron Devices Meeting},
  year = 1995,
}

@article{CTT100428603,
  author = {Y. Kado and H. Inokawa and Y. Okazaki and T. Tsuchiya and Y. Kawai and M. Sato and Y. Sakakibara and M. Ino and T. Takeya and Tetsushi Sakai },
  title = {Substantial Advantages of Fully-depleted CMOS/SIMOX Devices as Low-power High-Performance VLSI Components with its Bulk-CMOS Counterpart},
  journal = {International Electron Devices Meeting},
  year = 1995,
}

@article{CTT100428602,
  author = {Y. Kado and H. Inokawa and K. Nishimura and Y. Okazaki and M. Sato and T. Ohno and T. Tsuchiya and M. Ino and K. Takeya and Tetsushi Sakai},
  title = {Comparison oy 1/4-micron-gate Fully-depleted CMOS/SIMOX and Bulk Gate Arrays for Low-Voltage, Low-power Applications},
  journal = {Extended Abstracts of the 27th Conference on Solid State Devices},
  year = 1995,
}

@article{CTT100428605,
  author = {Tetsushi Sakai},
  title = {Present Status and Prospects of SR Lithography (it's application to Sub- and Deep Sub-quartermicron LSI's) (invite)},
  journal = {The 6th International Micro process Coference},
  year = 1993,
}

@article{CTT100428606,
  author = {M. Fujishima and M. Yamashita and M. Ikeda and K. Asada and Y. Omura and K. Izumi and Tetsushi Sakai and T. Sugano},
  title = {1GHz 50uw 1/2 Frequency Divider Fabricated on Ultra-thin SIMOX Substrate},
  journal = {Symposium on VLSI Circuits Dig. Tech. Papers},
  year = 1992,
}

@article{CTT100428619,
  author = {H. Miki and T. Ohmameda and M. Kumon and K. Asada and T. Sugano and Y. Omura and K. Izumi and Tetsushi Sakai},
  title = {Subfemutojoule Deep Submicrometer-Gate CMOS Built in Ultra-thin Si Film on SIMOX Substrates},
  journal = {IEEE Transaction on Electron Devices},
  year = 1991,
}

@article{CTT100428607,
  author = {S. Konaka and T. Kobayashi and T. Matsuda and M. Ugajin and K. Imai and Tetsushi Sakai},
  title = {HSST/BiCMOS Technology with 26ps ECL and 45ps 2V CMOS Inverter},
  journal = {International Electron Devices Meeting},
  year = 1990,
}

@article{CTT100428608,
  author = {Y. Kobayashi and S. Nakayama and N. Shimoyama and Y. Tanabe and K. Miura and S. Nakajima and K. Izumi and Tetsushi Sakai},
  title = {SST-BiCMOS Technology with 130ps CMOS and 50ps ECL},
  journal = {Symposium on VLSI Tech. Dig. Tech. Papers},
  year = 1990,
}

@article{CTT100428621,
  author = {S. Konaka and E. Yamamoto and K. Sakuma and Y. Amemiya and Tetsushi Sakai},
  title = {A 20-ps Si Bipolar IC Using Advanced Super Self-Aligned Process Technology with Collector Ion Implantation},
  journal = {IEEE Transaction on Electron Devices},
  year = 1989,
}

@article{CTT100428609,
  author = {H. Miki and Y. Omura and T. Ohmameda and M. Kumon and K. Asada and T. Sugano and K. Izumi and Tetsushi Sakai},
  title = {Fabrication and Characterization of a Quarter Micron Gate CMOS Using Ultra-thin Si Film(30nm) on SIMOX Substrates},
  journal = {International Electron Devices Meeting},
  year = 1989,
}

@article{CTT100428610,
  author = {Tetsushi Sakai and K. Murase and S. Konaka},
  title = {Prospect of SiHBT for High Speed LSI's},
  journal = {Extended Abstracts of the 21th Conference on Solid State Devices (invite)},
  year = 1989,
}

@article{CTT100428622,
  author = {小中信典 and 山本栄一 and 佐久間一人 and 雨宮好仁 and 酒井徹志},
  title = {超高速シリコンバイポーラIC技術：SST-1B},
  journal = {電子情報通信学会論文誌},
  year = 1989,
}

@article{CTT100428612,
  author = {H. Ichino and S. Konaka and M. Suzuki and T. Wakimoto and Tetsushi Sakai},
  title = {Super Self-Aligned Process Technology(SST) and Its Applications},
  journal = {Proceedings of the 1988 Bipolar/BiCMOS Circuits and Technology Meeting},
  year = 1988,
}

@article{CTT100428611,
  author = {Y. Kobayashi and C. Yamaguchi and Y. Amemiya and Tetsushi Sakai},
  title = {High Performance LSI Process Technology:SST CBi-CMOS},
  journal = {International Electron Devices Meeting},
  year = 1988,
}

@article{CTT100428615,
  author = {C. Yamaguchi and Y. Kobayashi and Tetsushi Sakai},
  title = {A 7GHz PNP Transistor for Complementary Bipolar LSI},
  journal = {Symposium on VLSI Tech. Dig. Tech. Papers },
  year = 1987,
}

@article{CTT100428614,
  author = {S. Konaka and Y. Amemiya and K. Sakuma and Tetsushi Sakai},
  title = {A 20ps/G Si Bipolar IC Using SST with Collector Ion Implantation},
  journal = {Extended Abstracts of the 19th Conference on Solid State Devices },
  year = 1987,
}

@article{CTT100428613,
  author = {Y. Tanabe and Y. Kobayashi and Y. Yamamoto and Tetsushi Sakai},
  title = {Device Structure and Electrical Chracteristics of SST-CMOS},
  journal = {Extended Abstracts of the 19th Conference on Solid State Devices },
  year = 1987,
}

@article{CTT100428623,
  author = {H. Miyanaga and S. Konaka and Y. Kobayashi and Y. Yamamoto and Tetsushi Sakai},
  title = {A 0.85-ns 1-Kbit ECL RAM },
  journal = {IEEE Journal of Solid-State Circuits},
  year = 1986,
}

@article{CTT100428624,
  author = {S. Konaka and Y. Yamamoto and Tetsushi Sakai},
  title = {A 30-ps Si Bipolar IC Using Super Self-Aligned Process Technology},
  journal = {IEEE Transaction on Electron Devices},
  year = 1986,
}

@article{CTT100428626,
  author = {Y. Yamamoto and H. Miyanaga and T. Amazawa and Tetsushi Sakai},
  title = {A MoSi2 Schottky Diode for Bipolar LSI's},
  journal = {IEEE Transaction on Electron Devices},
  year = 1985,
}

@article{CTT100428616,
  author = {Tetsushi Sakai and S. Konaka and Y. Yamamoto and M. Suzuki},
  title = {Prospects of SST Technology for High Speed LSI},
  journal = {International Electron Devices Meeting Technology Digest (invite)},
  year = 1985,
}

@article{CTT100428617,
  author = {Tetsushi Sakai},
  title = {Recent Advances in High Speed Bipolar LSI Technology (invite)},
  journal = {Extended Abstracts of the 17th Conference on Solid State Devices},
  year = 1985,
}

@article{CTT100428618,
  author = {Y. Kobayashi and Y. Yamamoto and Tetsushi Sakai},
  title = {A New Bipolar Transistor Structure for Very High Speed VLSI},
  journal = {Symposium on VLSI Tech. Dig. Tech. Papers },
  year = 1985,
}

@article{CTT100428625,
  author = {M. Suzuki and S. Konaka and H. Ichino and Tetsushi Sakai and S. Horiguchi},
  title = {Design and Application of a 2500-Gate Bipolar Macrocell Array},
  journal = {IEEE Journal of Solid-State Circuits},
  year = 1985,
}

@article{CTT100428627,
  author = {Y. Tamamoto and H. Miyanaga and Tetsushi Sakai},
  title = {Schottky Diodefor Bipolar LSI's Consisting of an Impurity-Controiied Si Substrate and AL(2%Si)Electrode},
  journal = {IEEE Transaction on Electron Devices},
  year = 1985,
}

@article{CTT100428628,
  author = {S. Konaka and M. Suzuki and Y. Yamamoto and Tetsushi Sakai},
  title = {Super Self-Aligned Process Technology(SST) for Si Bipolar Devices},
  journal = {Solide State Devices },
  year = 1985,
}

@article{CTT100428633,
  author = {S. Horiguchi and M. Suzuki and H. Ichino and S. Konaka and Tetsushi Sakai},
  title = {An 80ps 2500-Gate Bipolar Macrocell Array},
  journal = {International Solid State Circuits Conference Digest of Technical Papers},
  year = 1985,
}

@article{CTT100428635,
  author = {S. Konaka and Y. Yamamoto and Tetsushi Sakai},
  title = {A 30ps Si Bipolar IC Using Super Sel-Aligned Process Technology},
  journal = {Extended Abstracts of the16th Conference on Solid State Devices},
  year = 1984,
}

@article{CTT100428636,
  author = {H. Miyanaga and Y. Kobayashi and S. Konaka and Y. Yamamoto and Tetsushi Sakai},
  title = {A 1.1ns Access Time 4Kb Bipolar RAM Using Super Self-Aligned Technology},
  journal = {Symposium VLSI Tech. Dig. Tech. Papers},
  year = 1984,
}

@article{CTT100428634,
  author = {H. Miyanaga and S. Konaka and Y. Yamamoto and Tetsushi Sakai},
  title = {A 0.85ns 1Kb Bipolar ECL RAM},
  journal = {Extended Abstracts of the16th Conference on Solid State Devices},
  year = 1984,
}

@article{CTT100428629,
  author = {H. Miyanaga and Y. Yamamoto and Y. Kobayashi and Tetsushi Sakai},
  title = {A 1.5ns 1K Bipolar RAM Using Novel Circuit Design and SST-2 Technology},
  journal = {IEEE Journal of Solid-State Circuits},
  year = 1984,
}

@article{CTT100428637,
  author = {Y. Yamamoto and H. Miyanaga and Tetsushi Sakai},
  title = {A 1.5ns 1Kbit Bipolar RAM },
  journal = {Tech. Digest of ESSCIRC},
  year = 1983,
}

@article{CTT100427479,
  author = {Tetsushi Sakai and S. Konaka and Y. Kobayashi and M. Suzuki and Y. Kawai},
  title = {Gigabit Logic Bipolar Technology: Advanced Super Self-Alighned Process Technology},
  journal = {Electronics Letters},
  year = 1983,
}

@article{CTT100428638,
  author = {Tetsushi Sakai and M. Suzuki},
  title = {Super Self-Aligned Bipolar Technology  (invite)},
  journal = {Symposium VLSI Tech. Dig. Tech. Papers},
  year = 1983,
}

@article{CTT100428632,
  author = {M. Ohara and T. Kamoto and Tetsushi Sakai},
  title = {Very Wide-Band Silicon Bipolar Monolithic Amplifiers},
  journal = {Japanese Journal of Applied Physics},
  year = 1983,
}

@article{CTT100428631,
  author = {H. Yamauchi and T. Nikaidou and T. Nakashima and Y. Kobayashi and Tetsushi Sakai},
  title = {10ns 8×8 Multiplier LSI Using Super Self-Aligned Process Technology　},
  journal = {IEEE Journal of Solid-State Circuits},
  year = 1983,
}

@article{CTT100428630,
  author = {山内寛紀 and 二階堂忠信 and 中島孝利 and 小林由治 and 酒井徹志},
  title = {完全拡張機能を内蔵した超高速8×8ビット乗算器LSI},
  journal = {電子情報通信学会論文誌},
  year = 1983,
}

@article{CTT100428654,
  author = {M. Ohara and T. Kamoto and Tetsushi Sakai},
  title = {Very Wide-Band Silicon Bipolar Monolithic Amplifiers},
  journal = {Extended Abstracts of the 14th Coference on Solid State Devices},
  year = 1982,
}

@article{CTT100428620,
  author = {S. Konaka and M. Tabe and Tetsushi Sakai},
  title = {A New Silicon-on-Insulator Structure Using Molecular Beam Epitaxial Growth on Porous Silicon},
  journal = {Appl. Phys. Lett.},
  year = 1982,
}

@article{CTT100428656,
  author = {Tetsushi Sakai and Y. Yamamoto and Y. Kobayashi and K. Kawarada and Y. Inabe and T. Hayashi and H. Miyanaga},
  title = {A 3ns 1Kbit RAM Using Super Self-Aligned Process Technology},
  journal = {International Solid State Circuits Conference Digest of Tech. Papers},
  year = 1981,
}

@article{CTT100427478,
  author = {Tetsushi Sakai and Y. Yamamoto and Y. Kobayashi and K. Kawarada and Y. Inabe and T. Hayashi and H. Miyanaga},
  title = {A 3-ns 1-Kbit RAM Using Super Self-Aligned Process Technology},
  journal = {IEEE Trans. on Solid-State Circuits},
  year = 1981,
}

@article{CTT100427477,
  author = {Tetsushi Sakai and Y. Kobayashi and H. Yamauchi and M. Sato and T. Makino},
  title = {High Speed Bipolar ICs Using Super Self-Aligned Process Technology},
  journal = {Japanese Journal of Applide Physics},
  year = 1981,
}

@article{CTT100428655,
  author = {H. Nakamura and Tetsushi Sakai},
  title = {Bipolar Technologies for High Speed VLSIs},
  journal = {Symposium VLSI Tech. Dig. Tech. Papers},
  year = 1981,
}

@article{CTT100428657,
  author = {Tetsushi Sakai and Y. Kobayashi and H. Yamauchi and M. Sato and T. Makino},
  title = {High Speed Bipolar ICs Using Super Self-Aligned Process Technology},
  journal = {Extended Abstracts of the 14th Coference on Solid State Devices},
  year = 1980,
}

@article{CTT100427463,
  author = {Tetsushi Sakai and Y. Yamamoto and Y. Kobayashi and H. Yamauchi and T. Ishitani and T. Sudo},
  title = {Elevated Electrode Integrated Circuits},
  journal = {IEEE Journal of Solid-State Circuits},
  year = 1979,
}

@article{CTT100427462,
  author = {Tetsushi Sakai and Y. Sunohara and Y. Sakakibara and J. Murota},
  title = {Stepped Electrode Transistor: SET},
  journal = {Japanese Journal of Applide Physics},
  year = 1977,
}

@article{CTT100428660,
  author = {Tetsushi Sakai and Y. Yamamoto and Y. Kobayashi and H. Yamauchi and T. Ishitani and T. Sudo},
  title = {A 100ps Bipolar Logic},
  journal = {International Solid State Circuits Conference Digest of Tech. Papers},
  year = 1977,
}

@article{CTT100428659,
  author = {N. Tsuzuki and Y. Saito and Tetsushi Sakai},
  title = {A 4GHz 12W Transistor Amplifier Utilizing a New Self-Aligned Bipolar Structure},
  journal = {International Solid State Circuits Conference Digest of Tech. Papers},
  year = 1977,
}

@article{CTT100428658,
  author = {Y. Kobayashi and Tetsushi Sakai and Y. Arita},
  title = {Subnanosecond ED MOS IC using New Technology },
  journal = {International Electron Devices Meeting Tech. Digest},
  year = 1977,
}

@article{CTT100428661,
  author = {Tetsushi Sakai and Y. Sunohara and Y. Sakakibara and J. Murota},
  title = {Stepped Electrode Transistor},
  journal = {Extended Abstracts of the 8th Coference on Solid State Devices},
  year = 1976,
}

@inproceedings{CTT100822233,
  author = {川下道宏 and 山崎浩史 and 大見俊一郎 and 櫻庭政夫 and 室田淳一 and 酒井徹志.},
  title = {TML-MOSFETにおける極微細3次元チャネル形成プロセスの検討},
  booktitle = {第53回応用物理学関係連合講演会講演予稿集},
  year = 2006,
}

@inproceedings{CTT100822234,
  author = {川下道宏 and 大見俊一郎 and 櫻庭政夫 and 室田淳一 and 酒井徹志.},
  title = {TML(Twin-Multi-Layer Channel) MOSFETの作製プロセスに関する検討},
  booktitle = {第66回応用物理学会学術講演会講演予稿集},
  year = 2005,
}

@inproceedings{CTT100820420,
  author = {川下道宏 and 山崎浩史 and 袴田佳孝 and 大見俊一郎 and 櫻庭政夫 and 室田淳一 and 酒井徹志.},
  title = {新構造TML(Twin-Multi-Layer Channel)MOSFET},
  booktitle = {第52回応用物理学関係連合講演会講演予稿集},
  year = 2005,
}

@misc{CTT100596463,
  author = {Tetsushi Sakai},
  title = {超高速Siバイポーラトランジスタの構造・製造方法と超高速LSIへの応用に関する研
究},
  year = 1998,
}

@misc{CTT100573052,
  author = {酒井徹志 and 加藤　樹里 and 岡　秀明 and 金本　啓 and 原　寿樹},
  title = {半導体装置の製造方法},
  howpublished = {登録特許},
  year = 2008,
  month  = {},
  note   = {特願2006-071328(2006/03/15), 特開2007-053332(2007/03/01), 特許第4231909号(2008/12/19)}
}


@misc{CTT100573078,
  author = {酒井徹志 and 加藤　樹里 and 岡　秀明 and 金本　啓 and 原　寿樹},
  title = {半導体装置および半導体装置の製造方法},
  howpublished = {登録特許},
  year = 2010,
  month  = {},
  note   = {特願2005-288877(2005/09/30), 特開2007-103490(2007/04/19), 特許第4644577号(2010/12/10)}
}


@misc{CTT100572853,
  author = {酒井徹志 and 加藤　樹里 and 岡　秀明 and 金本　啓 and 原　寿樹},
  title = {半導体装置および半導体装置の製造方法},
  howpublished = {公開特許},
  year = 2007,
  month  = {},
  note   = {特願2005-288878(2005/09/30), 特開2007-103491(2007/04/19)}
}


@misc{CTT100573410,
  author = {酒井徹志 and 加藤　樹里 and 原　寿樹 and 金本　啓},
  title = {半導体装置および半導体装置の製造方法},
  howpublished = {公開特許},
  year = 2007,
  month  = {},
  note   = {特願2005-288876(2005/09/30), 特開2007-103489(2007/04/19)}
}


@misc{CTT100573277,
  author = {酒井徹志 and 原　寿樹 and 加藤　樹里 and 岡　秀明 and 金本　啓},
  title = {半導体装置の製造方法},
  howpublished = {公開特許},
  year = 2007,
  month  = {},
  note   = {特願2005-246124(2005/08/26), 特開2007-059804(2007/03/08)}
}


@misc{CTT100573182,
  author = {酒井徹志 and 原　寿樹},
  title = {半導体基板の製造方法及び、半導体装置の製造方法},
  howpublished = {登録特許},
  year = 2011,
  month  = {},
  note   = {特願2005-231849(2005/08/10), 特開2007-048949(2007/02/22), 特許第4852275号(2011/10/28)}
}


@misc{CTT100626301,
  author = {酒井徹志 and 岡　秀明 and 加藤　樹里 and 原　寿樹 and 金本　啓},
  title = {半導体装置の製造方法},
  howpublished = {登録特許},
  year = 2011,
  month  = {},
  note   = {特願2005-212747(2005/07/22), 特開2007-035701(2007/02/08), 特許第4726120号(2011/04/22)}
}


@misc{CTT100572970,
  author = {酒井徹志 and 金本　啓 and 原　寿樹 and 岡　秀明 and 加藤　樹里},
  title = {半導体基板の製造方法及び、半導体装置の製造方法},
  howpublished = {登録特許},
  year = 2010,
  month  = {},
  note   = {特願2005-209809(2005/07/20), 特開2007-027542(2007/02/01), 特許第4649282号(2010/12/17)}
}


@misc{CTT100577201,
  author = {酒井徹志 and 大見俊一郎 and 山崎　崇},
  title = {半導体基板、半導体装置及び半導体基板の作成方法},
  howpublished = {公開特許},
  year = 2005,
  month  = {},
  note   = {特願2005-514563(2004/10/04), 特再表2005-036638(2005/04/21)}
}




@phdthesis{CTT100596463,
  author = {Tetsushi Sakai},
  title = {超高速Siバイポーラトランジスタの構造・製造方法と超高速LSIへの応用に関する研
究},
  school = {北海道大学},
  year = 1998,
}