@book{CTT100544543,
  author = {徳光永輔},
  title = {電子物性・材料の事典},
  publisher = {朝倉書店},
  year = 2006,
}

@article{CTT100665498,
  author = {Toshihiko Kaneda and Daisuke Hirose and Takaaki Miyasako and PhanTrong Tue and Yoshitaka Murakami and Shinji Kohara and Jinwang Li and Tadaoki Mitani and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {Rheology printing for metal-oxide patterns and devices},
  journal = {Journal of Materials Chemistry C},
  year = 2014,
}

@article{CTT100666243,
  author = {Koji Nagahara and Bui Nguyen Quoc Trinh and Eisuke Tokumitsu and Satoshi Inoue and Tatsuya Shimoda},
  title = {Fabrication of 120-nm-channel-length ferroelectric-gate thin-film transistor by nanoimprint lithography},
  journal = {Jpn. J. Appl. Phys.},
  year = 2014,
}

@article{CTT100666239,
  author = {Kenichi Umeda and Takaaki Miyasako and Ayumu Sugiyama and Atsushi Tanaka and Masayuki Suzuki and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {All solution-processed amorphous oxide thin-film transistors using UV/O3 treatment},
  journal = {Jpn. J. Appl. Phys.},
  year = 2014,
}

@article{CTT100665497,
  author = {Yuichi Nagahisa and Yuichi Harada and Eisuke Tokumitsu},
  title = {Unipolar behavior in grapheme-channel field-effect-transistors with n-type doped SiC source/drain regions},
  journal = {Appl. Phys. Lett.},
  year = 2013,
}

@article{CTT100676714,
  author = {Phan Trong Tue and Takaaki Miyasako and Koichi Higashimine and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {Surface-modified lead-zirconium-titanate system for solution-processed ferroelectric-gate thin-film transistors},
  journal = {Applied Physisces A},
  year = 2013,
}

@article{CTT100820694,
  author = {Toshihiko Kaneda and Daisuke Hirose and Takaaki Miyasako and Phan Trong Tue and Yoshitaka Murakami and Shinji Kohara and Jinwang Li and Tadaoki Mitani and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {Rheology Printing for Metal-Oxide Patterns and Transistors},
  journal = {Journal of Materials Chemistry C},
  year = 2013,
}

@article{CTT100676713,
  author = {Pham Van Thanh and Bui Nguyen Quoc Trinh and Takaaki Miyasako and Phan Trong Tue and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {Interface Charge Trap Density of Solution Processed Ferroelectric Gate Thin Film Transistor Using ITO/PZT/Pt Structure},
  journal = {Ferroelectrics Letters Section},
  year = 2013,
}

@article{CTT100658531,
  author = {Phan Trong Tue and Takaaki Miyasako and Jinwang Li and Huynh Thi Cam Tu and Satoshi Inoue and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {High-performance solution-processed ZrInZnO thin-film transistors},
  journal = {IEEE Transactions on Electron Devices},
  year = 2013,
}

@article{CTT100658529,
  author = {Pham Van Thanh and Bui Nguyen Quoc Trinh and Takaaki Miyasako and Phan Trong Tue and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)4Ti3O12/Pb(Zr,Ti)O3 Stacked Gate Insulator},
  journal = {JPN. J. APPL. PHYS.},
  year = 2012,
}

@article{CTT100658530,
  author = {Jinwang Li and Eisuke Tokumitsu and Mikio Koyano and Tadaoki Mitani and Tatsuya Shimoda},
  title = {Highly conductive p-type amorphous oxides from low-temperature solution processing},
  journal = {Appl. Phys. Lett.},
  year = 2012,
}

@article{CTT100658528,
  author = {Jinwang Li and Toshihiko Kaneda and Eisuke Tokumitsu and Mikio Koyano and Tadaoki Mitani and Tatsuya Shimoda},
  title = {P-type conductive amorphous oxides of transition metals from solution processing},
  journal = {Appl. Phys. Lett.},
  year = 2012,
}

@article{CTT100658527,
  author = {Eisuke Tokumitsu and Kazuya Kikuchi},
  title = {Evaluation of Channel Modulation in In2O3/(Bi,La)4Ti3O12 Ferrolectric-Gate Thin Film Transistors by Capacitance-Voltage Measurements},
  journal = {Ferroelectrics},
  year = 2012,
}

@article{CTT100658526,
  author = {Yuichi Nagahisa and Eisuke Tokumitsu},
  title = {Suppression of Hole Current in Graphene Transistors with n-type Doped SiC Source/Drain Regions},
  journal = {Materials Science Forum},
  year = 2012,
}

@article{CTT100635838,
  author = {Hiroyuki Kameda and Jinwang Li and Dam Hieu Chi and Ayumi Sugiyama and Koich Higashimine and Tomoya Uruga and Hajime Tanida and Kazuo Kato and Toshihiko Kaneda and Takaaki Miyasako and Eisuke Tokumitsu and Tadaoki Mitani and Tatsuya Shimoda},
  title = {Crystallization of lead zirconate titanate without passing through pyrochlore by new solution process},
  journal = {Journal of the European Ceramic Society},
  year = 2012,
}

@article{CTT100631971,
  author = {Yukihiro Kaneko and Yu Nishitani and Hiroyuki Tanaka and Michihito Ueda and Yoshihisa Kato and Eisuke Tokumitsu and Eiji Fujii},
  title = {Correlated motion dynamics of electron channels and domain walls in a ferroelectric-gate thin-film transistor consisting of a ZnO/Pb(Zr,Ti)O3 stacked structure},
  journal = {Journal of Applied Physics},
  year = 2011,
}

@article{CTT100631972,
  author = {Yukihiro Kaneko and Yu Nishitani and Michihito Ueda and Eisuke Tokumitsu and Eiji Fujii},
  title = {A 60 nm channel length ferroelectric-gate field-effect transistor capable of fast switching and multilevel programming},
  journal = {Applied Physics Letters},
  year = 2011,
}

@article{CTT100631970,
  author = {Dan Ricinschi and Eisuke Tokumitsu},
  title = {Multiagent Strategic Interaction Based on a Game Theoretical Approach to Polarization Reversal in Ferroelectric Capacitors},
  journal = {Journal of Advanced Computational Intelligence and Intelligent Informatics},
  year = 2011,
}

@article{CTT100627546,
  author = {Gwang-Geun Lee and Yosihisa Fujisaki and Hiroshi Ishiwara and Eisuke Tokumitsu},
  title = {Low-voltage Operation of Ferroelectric Gate Thin Film Transistors Using Indium Gallium Zinc Oxide-Channel and Ferroelectric Polymer Poly(vinylidene fluoride-trifluoroethylene)},
  journal = {Applied Physics Express},
  year = 2011,
}

@article{CTT100676712,
  author = {Tue T. Phan and Trinh Q. Bui Nguyen and Takaaki Miyasako and Thanh V. Pham and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {Lanthanum Oxide Capping Layer for Solution-processed Ferroelectric-gate Thin-film Transistors},
  journal = {2011 Spring meeting, Materials Research Society Symp. Proc.},
  year = 2011,
}

@article{CTT100627545,
  author = {Gwang-Geun Lee and Eisuke Tokumitsu and Sung-Min Yoon and Yosihisa Fujisaki and Joo-Won Yoon and Hiroshi Ishiwara},
  title = {The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene)},
  journal = {Applied Physics Letters},
  year = 2011,
}

@article{CTT100627544,
  author = {Takaaki Miyasako and Bui Nguyen Quoc Trinh and Masatoshi Onoue and Toshihiko Kaneda and Phan Trong Tue and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {Ferroelectric-Gate Thin-Film Transitor Fabricated by Total Solution Deposition Process},
  journal = {Jpn. J. Appl. Phys.},
  year = 2011,
}

@article{CTT100627543,
  author = {PHAN TRONG TUE and TAKAAKI MIYASAKO and BUI NGUYEN QUOC TRINH and JINWANG LI and EISUKE TOKUMITSU and Tatsuya Shimoda},
  title = {Optimization of Pt and PZT Films for Ferroelectric-Gate Thin Film Transistors},
  journal = {Ferroelectrics},
  year = 2010,
}

@article{CTT100627542,
  author = {Takaaki Miyasako and Bui Nguyen Quoc Trinh and Masatoshi Onoue and Toshihiko Kaneda and Phan Tron Tue and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {Totally solution-processed feerroelectric-gate thin-film transistor},
  journal = {Applied Physics Letters},
  year = 2010,
}

@article{CTT100622225,
  author = {Jinwan Li and Hiroyuki Kameda and Bui Nguyen Quoc Trinh and Takaaki Miyasako and Phan Tron Tue and Eisuke Tokumitsu and Tadaoki Mitani and Tatsuya Shimoda},
  title = {A low-temperature crystallization path for device-quality ferroelectric films},
  journal = {Applied Physics Letters},
  year = 2010,
}

@article{CTT100614545,
  author = {Toshihiko Kaneda and Joo-Nam Kim and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {Improvement of Sol-Gel Derived PbZrxTi1-xO3 Film Properties Using Thermal Press Treatment},
  journal = {Jpn. J. Appl. Phys.},
  year = 2010,
}

@article{CTT100614546,
  author = {Eisuke Tokumitsu and Tomohiro Oiwa},
  title = {Fabrication of IGZO and In2O3-Channel Ferroelectric-Gate Thin Film Transistors},
  journal = {Mater. Res. Soc. Symp. Proc.},
  year = 2010,
}

@article{CTT100614542,
  author = {Sung-Min Yoon and Shin-Hyuk Yang and Soon-Won Jung and Chun-Won Byun and Sang-Hee Ko Park and Chi-Sun Hwang and Gwang-Geun Lee and Eisuke Tokumitsu and Hiroshi Ishiwara},
  title = {Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In-Ga-Zn ocide-based ferroelectric memory transistor},
  journal = {Applied Physics Letters},
  year = 2010,
}

@article{CTT100604741,
  author = {Yuki Tani and Satoshi Kobayashi and Eisuke Tokumitsu},
  title = {Electric field effects on radiative transition in quantum dot inorganic electroluminescent devices},
  journal = {IEICE Electronics Express},
  year = 2010,
}

@article{CTT100672562,
  author = {Mitsuru Nakata and Kazushige Takechi and Toshimasa Eguchi and Eisuke Tokumitsu and Hirotaka Yamaguchi and Setsuo Kaneko},
  title = {Effects of thermal annealing on ZnO-TFT characteristics and the application of excimer laser annealing to plastic-based ZnO-TFTs},
  journal = {Jpn. J. Appl. Phys.},
  year = 2009,
}

@article{CTT100672560,
  author = {Mitsuru Nakata and Kazushige Takechi and Eisuke Tokumitsu and Hirotaka Yamaguchi and Setsuo Kaneko},
  title = {Flexible high-performance amorphous InGaZnO4-TFTs utilizing excimer laser annealing},
  journal = {Jpn. J. Appl. Phys},
  year = 2009,
}

@article{CTT100572292,
  author = {Mitsuru Nakata and Kazushige Takechi and Kazufumi Azuma and Eisuke Tokumitsu and Hirotaka Yamaguchi and Setsuo Kaneko},
  title = {Improvement of InGaZnO4 Thin Film Transistors Characteristics Utilizing Excimer Laser Annealing},
  journal = {Applied Physics Express 2},
  year = 2009,
}

@article{CTT100547472,
  author = {Shiro Hino and Tomohiro Hatayama and Jun Kato and Naruhisa Miura and Tatsuo Oomori and Eisuke Tokumitsu},
  title = {Anomalously High Channel Mobility in SiC MOSFET with Al2O3/SiOx/SiC Gate Structure},
  journal = {Materials Science Forum},
  year = 2009,
}

@article{CTT100572294,
  author = {Eisuke TOKUMITSU and Youhei KONDO},
  title = {Fabrication and Characterization of ITO/BZN Thin Film Transistors},
  journal = {Journal of the Korean Physical Society},
  year = 2009,
}

@article{CTT100566228,
  author = {Tomohiro Hatayama and Shiro Hino and Naruhisa Miura and Tatsuo Oomori and Eisuke Tokumitsu},
  title = {Remarkable Increase in the Channel Mobility of SiC-MOSFETs by Controlling the Interfacial SiO2 Layer Between Al2O3 and SiC},
  journal = {IEEE Transactions on Electron Devices},
  year = 2008,
}

@article{CTT100560646,
  author = {S.Hino and Tomohiro Hatayama and J.Kato and E.Tokumitsu and N.Miura and T.Oomori},
  title = {High channel mobility 4H-SiC metal-oxide-semiconductor field-effect transistor with low temperature metal-organic chemical-vapor deposition grown Al2O3 gate insulator},
  journal = {Applied Physics Letters},
  year = 2008,
}

@article{CTT100508734,
  author = {Shiro Hino and Tomohiro Hatayama and Naruhisa Miura and Tatsuo Oomori and Eisuke Tokumitsu},
  title = {Fabrication and Charactarization of 4H-SiC MOSFET with MOCVD-grown Al2O3 Gate Insulator},
  journal = {Materials Science Forum},
  year = 2007,
}

@article{CTT100508735,
  author = {E.Tokumitsu and Y.Takano and H.Shibata and H.Saiki},
  title = {Fabrication and Characterization of M-I-FIS ferroelectric-gate structures using HfAlOx buffer layer},
  journal = {Journal of Microelectronic Engineering},
  year = 2007,
}

@article{CTT100507781,
  author = {Hirokazu Saiki and Eisuke Tokumitsu},
  title = {Data Retention and Readout Degradation Propertics of Pt/Sr0.7Sm0.07Bi2.2Ta2O9/HfO2/Si Structure Ferroelectric-Gate Field Effect Transistors},
  journal = {Jpn. J. Appl. Phys.},
  year = 2007,
}

@article{CTT100507202,
  author = {Eisuke Tokumitsu and Masaru Senoo and Etsu Shin},
  title = {Fabrication of Transparent Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Operation},
  journal = {Materials Research Society Symp. Proc.},
  year = 2006,
}

@article{CTT100507203,
  author = {Hirokazu Saiki and Syahhibul Azwar and Eisuke Tokumitsu},
  title = {Fabrication of SBT-based Ferroelectric Thin Films for Low Voltage Operation of Ferroelectric-gate FET},
  journal = {Transactions of the Materials Research Society of Japan},
  year = 2006,
}

@article{CTT100570099,
  author = {E.Tokumitsu and M. Senoo and T. Miyasako},
  title = {Use of ferroelectric gate insulator for thin film transistors with ITO channel},
  journal = {Journal of Microelectronic Engineering},
  year = 2005,
}

@article{CTT100570100,
  author = {Takaaki Miyasako and Masaru Senoo and Eisuke Tokumitsu},
  title = {Ferroelectric-gate thin–film transistors using indium-tin-oxide channel with large charge controllability},
  journal = {Applied Physics Letters},
  year = 2005,
}

@article{CTT100507820,
  author = {Takaaki Miyasako and Masaru Senoo and Eisuke Tokumitsu},
  title = {Ferroelectric-gate thin-film transistors using indium-tin-oxide channel with oarge charge controllability},
  journal = {Applied Physics Letters},
  year = 2005,
}

@article{CTT100507842,
  author = {Takaaki Miyasako and Masaru Senoo and Eisuke Tokumitsu},
  title = {Electrical Properties of Sol-Gel Derived Ferroelectric Pb(Zr,Ti)O3 Films Fabricated Using Low-Pressure Consolidation Process},
  journal = {IEICE Transactions on Electronics},
  year = 2004,
}

@article{CTT100507833,
  author = {Hirokazu Saiki and Eisuke Tokumitsu},
  title = {Ferroelectric Sprit-Gate-Feild-Effect-Transistors for Nonvolatile Memory Cell Array},
  journal = {IEICE Transactions on Electronics},
  year = 2004,
}

@article{CTT100507870,
  author = {Shiro Hino and Makoto Nakayama and Kenji Takahashi and Hiroshi Funakubo and Eisuke Tokumitsu},
  title = {Characterization of Hafnium Oxide Thin Films by Sorce Gas Pulse Introduced Metalorganic Chemical Vapor Deposition using Amino-Family Hf Precursors},
  journal = {Jpn. J. Appl. Phys.},
  year = 2003,
}

@article{CTT100490168,
  author = {Naoki Sugita and Eisuke Tokumitsu and Minoru Osada and Masato Kakihana},
  title = {In situ Raman Spectroscopy observation of Crystallization Process of Sol-Gel Derived Bi<sub>4-x</sub>La<sub>x</sub>Ti<sub>3</sub>O<sub>12</sub> Films},
  journal = {Jpn. J. Appl. Phys.},
  year = 2003,
}

@article{CTT100548651,
  author = {Kenji Takahashi and Makoto Nakayama and Shiro Hino and Eisuke Tokumitsu and Hiroshi Funakubo},
  title = {Growth of Hafnium Oxide Films by Metalorganic Chemical Vapor Deposition Using Oxygen-Free Hf[N(C2H5)2]4 Precursor and Their Properties},
  journal = {Integrated Ferroelectrics},
  year = 2003,
}

@article{CTT100507873,
  author = {Kenji Takahashi and Makoto Nakayama and Shintaro Yokoyama and Takeshi Kimura and Eisuke Tokumitsu},
  title = {Preparation of hafnium oxide films from oxygen-free Hf[N(C2H5)2]4 precursor and their properties},
  journal = {Applied Surface Science},
  year = 2003,
}

@article{CTT100672558,
  author = {Naoki SUGITA and Minoru OSADA and Eisuke TOKUMITSU},
  title = {Characterization of Sol-gel Derived Bi4-xLaxTi3O12 Films},
  journal = {Jpn. J. Appl. Phys.},
  year = 2002,
}

@article{CTT100455773,
  author = {E.Tokumitsu and Takeaki Isobe and Takeshi Kijima and Hiroshi Ishiwara},
  title = {Fabrication and Characterization of Metal- Ferroelectric-Metal-Insulator-Semiconductor (MFMIS) Structures Using Ferroelectric (Bi,La)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> Films},
  journal = {Jpn. J. Appl. Phys},
  year = 2001,
}

@article{CTT100455716,
  author = {Eisuke Tokumitsu and Kojiro Okamoto and Hiroshi Ishiwara},
  title = {Low Voltage Operation of Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor(MFMIS)-Field-Effect-Transistors(FETs) Using Pt/SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>/Pt/SrTa<sub>2</sub>O<sub>6</sub>/SiON/Si Structures},
  journal = {Jpn. J. Appl. Phys.},
  year = 2001,
}

@article{CTT100455717,
  author = {S.Imada and E.Tokumitsu and H.Ishiwara},
  title = {Ferroelectricity of YMnO<sub>3</sub> Thin Films on Pt(111)/ Al<sub>2</sub>O<sub>3</sub>(0001)and Pt(111)/Y<sub>2</sub>O<sub>3</sub>(111)/Si(111) structures grown by Molwcular Beam Epitaxy},
  journal = {Jpn. J. Appl. Phys.},
  year = 2001,
}

@article{CTT100455718,
  author = {Bum-Ki Moon and Hiroshi Ishiwara and E.Tokumitsu and M.Yoshimoto},
  title = {Characteristics of ferroelectric Pb(Zr,Ti)O<sub>3</sub> films epitaxialy grown on CeO<sub>2</sub>(111)/Si(111) substrates},
  journal = {Thin Solid Films},
  year = 2001,
}

@article{CTT100455719,
  author = {E. Tokumitsu and D. Takahashi and H. Ishiwara},
  title = {Characterization of Metal-Ferroelectric- (Metal-)Insulator-Semiconductor(MF(M)IS)Structures Using (Pb,La)(Zr,Ti)O<sub>3</sub>and Y<sub>2</sub>O<sub>3</sub> Films},
  journal = {Jpn. J. Appl. Phys.},
  year = 2000,
}

@article{CTT100535805,
  author = {Sung-ming Yoon and Eisuke Tokumitsu and Hiroshi Ishiwara},
  title = {Ferroelectric Neuron Integrated Circuits using SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>-Gate FET's and CMOS Schmitt-Trigger Oscillators},
  journal = {IEEE Transactions on Electron Devices},
  year = 2000,
}

@article{CTT100535806,
  author = {Eisuke TOKUMITSU and Gen FUJII and Hiroshi ISHIWARA},
  title = {Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor(MFIS)-and Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Ferroelectric SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> Film and SrTa<sub>2</sub>O<sub>6</sub>/SiON Buffer Layer},
  journal = {Jpn. J. Appl. Phys.},
  year = 2000,
}

@article{CTT100535807,
  author = {Sung-ming YOON and Eisuke TOKUMITSU and Hiroshi ISHIWARA},
  title = {Improvement of Memory Retention Characteristics in Ferroelectric Neuron Circuits Using a Pt/ SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>/Pt/Ti/SiO<sub>2</sub>/Si Structure-Field Effect Transistor as a Synapse Device},
  journal = {Jpn. J. Appl. Phys.},
  year = 2000,
}

@article{CTT100507621,
  author = {Eisuke Tokumitsu and Koji Aizawa and Kojiro Okamoto and Hiroshi Ishiwara},
  title = {Impact of face-to-face annealing in preparation of sol-gel-derived SrBi2Ta2O9 thin films},
  journal = {Appl. Phys. Lett.},
  year = 2000,
}

@article{CTT100535810,
  author = {Sung-ming Yoon and Eisuke Tokumitsu and Hiroshi Ishiwara},
  title = {Adaptive-Learning Neuron Integrated Circuits Using Metal-Ferroelectric (SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>)-Semiconductor (MFS) FETs},
  journal = {IEEE Electron Device Letters},
  year = 1999,
}

@article{CTT100536340,
  author = {E.Tokumitsu and Gen Fujii and Hiroshi Ishiwara},
  title = {Nonvolatile ferroelectric-gate FETs using SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>/Pt/SrTa<sub>2</sub>O<sub>6</sub>/SiON/Si structures},
  journal = {Appl. Phys. Lett.},
  year = 1999,
}

@article{CTT100425422,
  author = {Sung-ming Yoon and Eisuke Tokumitsu and Hiroshi Ishiwara},
  title = {An electrically modifiable synapse arrary composed of metal-ferroelectric-semiconductor (MFS) FETs using SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> thin films},
  journal = {IEEE Electron Device Lett.},
  year = 1999,
}

@article{CTT100672565,
  author = {SHOUGO IMADA and Shigeto Shouriki and Eisuke Tokumitsu and Hiroshi Ishiwara},
  title = {MBE GROWTH OF FERROELECTRIC YMnO3 THIN FILMS ON Si(111) USING Y2O3 BUFFER LAYERS},
  journal = {Mat. Res. Soc. Symp. Proc.},
  year = 1999,
}

@article{CTT100535809,
  author = {E.TOKUMITSU and Y. TAKAHASHI and H.ISHIWARA},
  title = {PREPARATION AND CHARACTERIZATION OF Bi2VO5.5 FILMS BY MOD METHOD},
  journal = {Mater. Res. Soc. Sympo. Proc.},
  year = 1999,
}

@article{CTT100672563,
  author = {EISUKE TOKUMITSU},
  title = {Electrical Properties of La0.7Sr0.3CoO3/Pb(Zr0.52Ti0.48)O3/La0.7Sr0.3CoO3 Thin Film Capacitors Formed on MgO Substrates Using the Sol-Gel Method},
  journal = {Jpn. J. Appl. Phys.},
  year = 1998,
}

@article{CTT100535747,
  author = {Tatsuya KAMEI and Eisuke TOKUMITSU and Hiroshi ISHIWARA},
  title = {Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization},
  journal = {IEICE Trans. Electron},
  year = 1998,
}

@article{CTT100417465,
  author = {Byung-Eun PARK and Shogo IMADA and Eisuke TOKUMITSU and Hiroshi ISHIWARA},
  title = {Annealing Effect of the CeO2 Buffer Layers for PZT/CeO2 /Si(111) Structures},
  journal = {Journal of the Korean Physical Society},
  year = 1998,
}

@article{CTT100535748,
  author = {Koji AIZAWA and Eisuke TOKUMITSU and Shigenori OHTAKE and Hiroshi ISHIWARA},
  title = {C-V Characteristics of Al/BaMgF4/Si(111) Diodes Fabricated by Dry Etching Process},
  journal = {Journal of the Korean Physical Society},
  year = 1998,
}

@article{CTT100417461,
  author = {Eisuke Tokumitsu and Ryo-ichi Nakamura and Hiroshi Ishiwara},
  title = {Nonvolatile Memory Operations of Metal-Ferroelectric-Insulator-Semiconductor(MFIS) Fet's Using PLZT/STO/Si(100) Structures},
  journal = {IEEE Electron Device Letters},
  year = 1997,
}

@article{CTT100535746,
  author = {EISUKE TOKUMITSU and TOSHISHIGE SHIMAMURA},
  title = {Electrical Properties of Ferroelectric-Capacitor-Gate Si Mos Transistors Using P(L)ZT Films},
  journal = {Integrated Ferroelectrics},
  year = 1997,
}

@article{CTT100417453,
  author = {Eisuke TOKUMITSU and Ryo-ichi NAKAMURA and Kensuke ITANI and Hiroshi ISHIWARA},
  title = {Film Quality Dependence of Adaptive-Learning Processes in Neurodevices Using Ferroelectric PbZrxTi1-xO3(PZT) Films},
  journal = {Japanese Journal of Applied Physics},
  year = 1995,
}

@article{CTT100417451,
  author = {SHUN-ICHIRO OHMI and EISUKE TOKUMITSU and HIROSHI ISHIWARA},
  title = {Characterization of ferroelectric BaMgF4 films grown on AlGaAs/GaAs (100) high-electron-mobility transistor structures},
  journal = {Journal of Crystal Growth},
  year = 1995,
}

@article{CTT100417456,
  author = {E. Tokumitsu and M. Shirahama and K. Nagao and S. Nozaki and M. Konagai and K. Takahashi},
  title = {Carbon doping in molecular beam epitaxial (MBE) growth of GaAs using neopentane as a novel carbon source},
  journal = {Journal of Crystal Growth},
  year = 1993,
}

@article{CTT100536172,
  author = {Eisuke Tokumitsu and Jun-ichi Shirakashi and M. Qi and Takumi Yamada and Shinji Nozaki and Makoto Konagai and Kiyoshi Takahashi},
  title = {Heavily carbon doped p-type In GaAs by MOMBE},
  journal = {Journal of Crystal Growth},
  year = 1992,
}

@inproceedings{CTT100673362,
  author = {徳光永輔 and 下田達也},
  title = {溶液プロセスによる酸化物チャネル強誘電体ゲートトランジスタの作製},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100669874,
  author = {Phan Trong Tue and Toshihiko Kaneda and Daisuke Hirose and Takaaki Miyasako and Yoshitaka Murakami and Shinji Kohara and Jinwang Li and Tadaoki Mitani and EisukeTokumitsu and Tatsuya Shimoda},
  title = {Fabrication of Oxide Thin-Film Transistors Using the Newly Developed Rheology Printing Method},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100669829,
  author = {Daisuke Hirose and Toshihiko Kaneda and Takaaki Miyasako and Phan T. Tue and Yoshitaka Murakami and Shinji Kohara and Jinwang Li and Tadaoki Mitani and Eisuke Tokumitsu and Shogo Nobukawa and Tatsuya Shimoda},
  title = {Rheological Properties of the ITO Gel and Its Application for Forming Nano-Patterns by Imprinting},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673363,
  author = {徳光永輔},
  title = {溶液プロセスから作成した酸化物チャネル強誘電体ゲートトランジスタ},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100665776,
  author = {Ken-Ichi Haga and Yuki Nakada and Dan Ricinschi and Eisuke Tokumitsu},
  title = {Characterization of In2O3 Channel Ferroelectric-Gate Thin Film Transistors},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100665500,
  author = {永久雄一 and 徳光永輔},
  title = {SiC上グラフェンチャネルトランジスタの単極性動作と高オン／オフ比実現に向けた試み（Ⅱ）},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100666139,
  author = {EISUKE TOKUMITSU},
  title = {Ferroelectric-gate oxide channel thin film transistors fabricated by solution process},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100665499,
  author = {Eisuke Tokumitsu and Kei Sato and Ken-Ichi Haga},
  title = {Fundamental Study on Thermal Nanoimprint Process for Oxide-channel Thin Film Transistor Fabrication},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100660876,
  author = {Hiroyuki Yamada and Shiro Hino and Naruhisa Miura and Masayuki Imaizumi and Satoshi Yamakawa and EISUKE TOKUMITSU},
  title = {Fabrication of 4H-SiC MOSFETs Using Stacked Al2O3 Gate Insulator with Pre-Annealed Al2O3 Buffer Layer},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100666140,
  author = {Yuichi Nagahisa and Eisuke Tokumitsu},
  title = {Electrical characterization of gate modulation in graphene/n-SiC contacts},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658540,
  author = {EISUKE TOKUMITSU},
  title = {Use of low-temperature-deposited high-k gate insulators for SiC power MOSFETs},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658539,
  author = {Koji Nagahara and Bui Nguyen Quoc Trinh and Eisuke Tokumitsu and Satoshi Inoue and Tatsuya Shimoda},
  title = {120 nm Channel Length Ferroelectric-Gate Thin Film Transistor by Nanoimprint Lithography},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658537,
  author = {Kenichi Umeda and Takaaki Miyasako and Ayumu Sugiyama and Atsushi Tanaka and Masayuki Suzuki and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {All Solution-Processed Amorphous Oxide Thin Film Transistors via UV/O3 Treatment},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658536,
  author = {Y.Nagahisa and Y.Harada and E. Tokumitsu},
  title = {Observation of High on/off Drain Current Ratio in Graphene Transistors with n-type doped SiC Source/Drain Regions},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658535,
  author = {Eisuke Tokumitsu and Etsu Shin and Hiroshi Shibata},
  title = {Asymmetry of switching time in oxide-channel ferroelectric-gate thin film transistors},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658542,
  author = {羽賀健一 and 徳光永輔},
  title = {a-In-Ga-Zn-O チャネル強誘電体ゲート薄膜トランジスタの作製},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658543,
  author = {徳光永輔},
  title = {応用電子物性分科会70周年によせて ――応電の思い出と機能性酸化物デバイス研究――},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658534,
  author = {EISUKE TOKUMITSU},
  title = {Oxide-channel thin film transistors using ferroelectric and high-k gate insulators},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100658544,
  author = {金子幸広 and 西谷雄 and 上田路人 and 徳光永輔 and 辻村歩},
  title = {高速かつ多値記憶可能な60 nm強誘電体ゲートトランジスタ},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100658533,
  author = {Eisuke Tokumitsu and Isahaya Yamamura and Shiro Hino and Naruhisa Miura and Masayuki Imaizumi and Hiroaki Sumitani and Tatsuo Oomori},
  title = {Comparative Study of Metalorganic Chemical Vapour Deposition of HfO2 and Al2O3 Gate Insulators on SiC for Power MOSFET Applications},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100658532,
  author = {Eisuke Tokumitsu and Gwang-Geun Lee},
  title = {Switching properties of ferroelectric P(VDF-TrFE) films fabricated on oxide electrodes},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100638727,
  author = {Pham Van Thanh and Bui Nguyen Quoc Trinh and Takaaki Miyasako and Phan Trong Tue and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {Electric properties and interface charge state of ferroelectric gate transistor using BLT/PZT hybrid as gate insulator},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100635840,
  author = {Ken-ichi Haga and Eisuke Tokumitsu},
  title = {Fabrication and Characterization of An-Sn-O series oxide thin film transistors},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100635844,
  author = {永久雄一 and 徳光永輔},
  title = {ＳｉＣ上グラフェンチャネルトランジスタの単極性動作と高オン／オフ比実現に向けた試み},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100632116,
  author = {清水貴也 and 羽賀健一 and 徳光永輔 and 金田敏彦 and 下田達也},
  title = {様々な液体原料を用いたIn-Zn-O薄膜の形成と薄膜トランジスタ応用},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100632114,
  author = {Masatoshi Onoue and Takaaki Miyasako and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {High performance Bi-Nb-Ox thin-film capacitors fabricated by chemical solution deposition process},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100632113,
  author = {Takaaki Miyasako and Masatoshi Onoue and Hirokazu Tsukada and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {Solution-processed oxide thin-film transistors using La-Ta-O/Bi-Nb-O stacked gate insulator},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100632112,
  author = {Jinwang Li and Eisuke Tokumitsu and Mikio Koyano and Tatsuya Shimoda},
  title = {P-type Amorphous Oxide Semiconductors Ln-Ru-O from Solution Processing},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100631973,
  author = {Bui Nguyen Quoc Trinh and Toshihiko Kaneda and Takaaki Miyasako and Pham Van Thanh and Phan Trong Tue and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {Nano-sized PT Lines and Spaces Patterned by Nanoimprint Lithography and physical Dry-etching Method},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100631968,
  author = {Joo-Nam Kim and Toshihiko Kaneda and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {Leakage Cuurent property of the PZT films improved by thermal press treatment},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100631969,
  author = {Joo-Nam Kim and Toshihiko Kaneda and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {Leakage Cuurent property of the PZT films improved by thermal press treatment},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100631964,
  author = {Eisuke Tokumitsu and Yasuhiro Takahashi and Toshihiko Kaneda and Tatsuya Shimoda},
  title = {Source solution dependence on electrical properties of In-Zn-O channel thin film transistors},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100631923,
  author = {Eisuke Tokumitsu and Akio Ishiguro and Hiroyuki Yamada and Shiro Hino and Naruhisa Miura and Masayuki Imaizumi and Hiroaki Sumitani and Tatsuo Oomori},
  title = {Al2O3/4H-SiC MOSFETs Fabricated with High-Temperature Nitridation Process},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100631967,
  author = {Bui Nguyen Quoc Trinh and Takaaki Miyasako and Toshihiko Kaneda and Pham Van Thanh and Phan Trong Tue and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {Data Disturbance-free NAND-type Ferroelectric-gate Thin Film Transistor Array using Sol-gel ITO and Stacked (BLT/PZT) Gate Insulator},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100631959,
  author = {Yuichi Nagahisa and Eisuke Tokumitsu},
  title = {Suppression of Hole Current in Graphene Transistors with n-Type Doped SiC Source/Drain Regions},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100632301,
  author = {Lee Gwang Geun and Yosihisa Fujisaki and Hiroshi Ishiwara and Eisuke Tokumitsu},
  title = {Low voltage operation of ferroelectric thin film transistors using P(VDF-TrFE) and IGZO},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100632302,
  author = {木田憲之助 and 日野史郎 and 三浦 成久 and 今泉昌之 and 岸谷博昭 and 徳光永輔},
  title = {H(CH3)2Alを用いたMOCVD法SiC基板上へのAl2O3膜の形成とAl2O3/SiC MOSFETの電気的特性評価},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100632115,
  author = {山田泰之 and 石黒暁夫 and 日野史郎 and 三浦 成久 and 今泉昌之 and 岸谷博昭 and 徳光永輔},
  title = {Al2O3堆積膜をゲート絶縁膜に用いたSiC-MOSFETの作製と評価},
  booktitle = {信学技報},
  year = 2011,
}

@inproceedings{CTT100627552,
  author = {Bui Nguyen Quoc Trinh and Takaaki Miyasako and Toshihiko Kaneda and Phan Trong Tue and Pham Van Thanh and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {SUB-MICRON FERROELECTRIC-GATE THIN FILM TRANSISTOR USING SOL-GEL ITO CHANNEL AND STACKED (BLT/PZT) INSULATOR},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100631922,
  author = {Eisuke Tokumitsu and Kazuya Kikuchi},
  title = {Switching Characteristics of In2O3/(Bi,La)4Ti3O12 Ferroelectric-Gate Thin Film Transistors”},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100627551,
  author = {Tue T. Phan and Trinh Q. Bui Nguyen and Takaaki Miyasako and Thanh V. Pham and Eisuke Tokumitsu},
  title = {Lanthanum Oxide Capping Layer for Solution-processed Ferroelectric-gate Thin-film Transistors},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100627548,
  author = {Thanh V. Pham and Quoc Trinh N. Bui and Tue T. Phan and Takaaki Miyasako and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {Analysis on Interface Layer Between Pt Electrode and Ferroelectric Layer of Solution-processed PZT Capacitor},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100632120,
  author = {石黒暁夫 and 山田泰之 and 日野史郎 and 三浦 成久 and 大森 達夫 and 徳光永輔},
  title = {高温窒化処理とAl2O3堆積膜を用いた4H-SiC MOSFETの作製と評価},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100632118,
  author = {永久雄一 and 徳光永輔},
  title = {n型ドープしたSiCをソース/ドレインに用いたグラフェンチャネルトランジスタの作製とその評価},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100632117,
  author = {高橋泰裕 and 徳光永輔},
  title = {液体プロセスによるIn2O3及びIn-Zn-O(IZO)チャネル薄膜トランジスタの形成},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100632297,
  author = {菊池和哉 and 徳光永輔},
  title = {In2O3をチャネルに用いた強誘電体ゲートTFTの電気的特性},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100632296,
  author = {山村勇速 and 徳光永輔 and 日野史郎 and 三浦 成久 and 大森 達夫},
  title = {MOCVD法によるSiC上へのHfO2膜の堆積とHfO2/SiO2/4H-SiC MOSFETの作製},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100627547,
  author = {Eisuke Tokumitsu and Yasuhiro Takahashi},
  title = {In2O3 & IZO Channel Thin-Film Transistors Prepared by Chemical Solution Process},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100614540,
  author = {Phan Tue and Bui Trinh and Takaaki Miyasako and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {Fabrication and Characterization of a Ferroelectric-Gate FET with a ITO/PZT/SRO/Pt Stacked Structure”, ,},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100611600,
  author = {G.-G. Lee and S.-M. Yoon and J.-W. Yoon and Y. Fujisaki and H. Ishiwara and E. Tokumitsu},
  title = {Flexible Ferroelectric-TFTs Using IGZO-Channel and P(VDF-TrFE)},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100614532,
  author = {高橋泰裕 and 徳光永輔},
  title = {液体プロセスによるIn2O3及びIn-Zn-O(IZO)薄膜の形成と酸化物チャネル薄膜トランジスタへの応用},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100622407,
  author = {GwangGeun Lee and Sung-ming Yoon and Yosihisa Fujisaki and Hiroshi Ishiwara and Eisuke Tokumitsu},
  title = {Fabrication of Organic P(VDF-TrFE) Film on PEN Substrate for Flexible IGZO-channel Ferroelectric-gate TFTs},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100614534,
  author = {羽賀健一 and 徳光永輔},
  title = {スパッタ法によるAl-Zn-Sn-O チャネルＴＦＴの作製},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100622409,
  author = {Y. Nagahisa and E. Tokumitsu},
  title = {FABRICATION OF GRAPHEN CHANNEL TRANSISTOR WITH HEAVILY DOPED SiC SOURCE/DRAIN REGIONS},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100614529,
  author = {石黒暁夫 and 山田泰之 and 日野史郎 and 三浦 成久 and 大森 達夫 and 徳光永輔},
  title = {高温窒化処理とAl2O3堆積膜を用いた４H-SiC MOSFETの作製と評価},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100622411,
  author = {Takaaki Miyasako and Bui Nguyen Quoc Trinh and Toshihiko Kaneda and Masatoshi Onoue and Phan Trong Tue and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {Ferroelectric-Gate Thin-Film Transistor Fabricated by Total Solution Deposition Process},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100617818,
  author = {羽賀健一 and 徳光永輔},
  title = {スパッタ法によるAl-Zn-Sn-OチャネルTFTの作製},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100617816,
  author = {Gwang-Geun Lee and Sung-Min Yoon and Joo-Won Yoon and Yosihisa Fujisaki and Hiroshi Ishiwara and Eisuke Tokumitsu},
  title = {Flexible non-volatile memory TFT with IGZO-channel and ferroelectric polymer},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100611599,
  author = {Eisuke Tokumitsu},
  title = {Recent progress on ferroelectric-gate thin film trensistors with oxide channel},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100608095,
  author = {Eisuke Tokumitsu and Youhei Kondo and Tomohiro Oiwa},
  title = {Preparation of Bi-Zn-Nb-O(BZN)High-K Gate insulator by Sputtering for Oxide Channel Thin Film Transistors},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100598398,
  author = {Eisuke Tokumitsu and Ken-ichi Haga and Tomohiro Oiwa},
  title = {Fabrication of IGZO and In2O3-Channel Ferroelectric-Gate Thin Film Transistors},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100604738,
  author = {Gwang-Geun Lee and Sung-Min Yoon and Joo-Won Yoon and 藤崎芳久 and 石原宏 and 徳光永輔},
  title = {有機強誘電体P(VDF-TrFE)と無機酸化物半導体IGZOを用いた強誘電体ゲート薄膜トランジスタの作製と評価},
  booktitle = {信学技報、SDM2010-16、OME2010-16(2010-04)},
  year = 2010,
}

@inproceedings{CTT100601201,
  author = {徳光永輔},
  title = {ナノ構造技術},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100601200,
  author = {奥村優作 and 徳光永輔},
  title = {ゾルゲル法による酸化物チャネル薄膜トランジスタの作製},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100598394,
  author = {Mitsuru Nakata and Kazushige Takechi and Shinya Yamaguchi and Eisuke Tokumitsu and Hiroshi Tanabe and Setsuo Kaneko},
  title = {Low-Temperature Fabrication of Amorphous InGaZnO4 Thin-Film Transistors Utilizing Excimer},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100600674,
  author = {竹崎慶太郎 and 日野史郎 and 三浦 成久 and 大森 達夫 and 徳光永輔},
  title = {窒化処理とAl2O3堆積膜を用いた4H-SiC MOSFETの作製と評価},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100592041,
  author = {羽賀健一 and 大岩朝洋 and 徳光永輔},
  title = {IGZOおよびIn2O3をチャネルに用いた強誘電体ゲートTFTの作製},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100592042,
  author = {奥村優作 and 徳光永輔},
  title = {ゾルゲル法によるITO及びIn2O3薄膜の形成と酸化物チャネル薄膜トランジスタへの応用},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100605090,
  author = {GwangGeun Lee and Sung-ming Yoon and JooWon Yoon and Yosihisa Fujisaki and Hiroshi Ishiwara and Eisuke Tokumitsu},
  title = {Fabrication of IGZO-channel Ferroelectric-gate TFTs with Organic P(VDF-TrFE) Film},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100589333,
  author = {竹崎慶太郎 and 日野史郎 and 三浦成久 and 大森達夫 and 徳光永輔},
  title = {窒化処理とAL2O3堆積膜を用いた4H-SiC MOSFETの作製と評価},
  booktitle = {第70回 応用物理学会学術講演会},
  year = 2009,
}

@inproceedings{CTT100589332,
  author = {Lee Gwang Geun and Hoowon Yoon and Yosihisa Fujisaki and Hiroshi Ishiwara and Eisuke Tokumitsu},
  title = {Ferroelectric Behaviors of P(VDF-TrFE) Thin Films on Transparent ITO Electrode},
  booktitle = {第70回 応用物理学会学術講演会},
  year = 2009,
}

@inproceedings{CTT100588559,
  author = {E. Tokumitsu and T. Oiwa},
  title = {Fabrication of In-Ga-Zn-O channel thin film transistors with high-k and ferroelectric gate insulators},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100588639,
  author = {Phan Trong Tue and Takaaki Miyasako and Bui Nzuyen Quoc Trinh and Jinwang Li and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {OPTIMIZATION OF Pt AND PZT FILMS FOR FERROELECTRIC-GATE THIN FILM TRANSISTORS},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100574790,
  author = {EISUKE TOKUMITSU},
  title = {Recent Progress and Future Prospects of Oxide-channel Ferroelectric-gate Thin Film Transistor with Large Charge Controllability},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100589330,
  author = {中田充 and 竹知和重 and 東和文 and 徳光永輔 and 山口弘高 and 金子節夫},
  title = {エキシマレーザを用いたプラスチック基板上a-inGaZnO4 TFT特性の改善},
  booktitle = {第５６回 応用物理学関係連合会講演会},
  year = 2009,
}

@inproceedings{CTT100572241,
  author = {Eisuke Tokumitsu and Tomohiro Oiwa},
  title = {Transmission Electron Microscope Observation of ITO/(Bi,La)4Ti3O12 TFT Structures},
  booktitle = {The Proceedings of the 5th International thin Transistor Conference},
  year = 2009,
}

@inproceedings{CTT100574794,
  author = {近藤洋平 and 大岩朝洋 and 羽賀健一 and 徳光永輔},
  title = {Bi1.5Zn1.0b1.5O7をゲート絶縁膜に用いた酸化物チャネル薄膜トランジスタの作製},
  booktitle = {第５６回 応用物理学関係連合会講演会},
  year = 2009,
}

@inproceedings{CTT100589331,
  author = {中田充 and 竹知和重 and 東和文 and 徳光永輔 and 山口弘高 and 金子節夫},
  title = {エキシマレーザを用いたプラスチック基板上ZnO TFT特性の改善},
  booktitle = {第５６回 応用物理学関係連合会講演会},
  year = 2009,
}

@inproceedings{CTT100570101,
  author = {Tomohiro Oiwa and Youhei Kondo and Mitsuru Nakata and Eisuke Tokumitsu},
  title = {Fabrication of IGZO Channel Thin Film Transistor with BZN Gate Insulator},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100572293,
  author = {大岩朝洋 and 近藤洋平 and 中田充 and 徳光永輔},
  title = {強誘電体・高誘電率材料をゲート絶縁膜に用いたIGZOチャネル薄膜トランジスタの作製と評価},
  booktitle = {2008年秋季 第69回応用物理学会学術講演会 講演予稿集},
  year = 2008,
}

@inproceedings{CTT100566229,
  author = {H.Moriya and S.Hino and N.Miura and T.Oomori and E.Tokumitsu},
  title = {Effect of Oxidant in MOCVD-growth of Al2O3 Gate Insurator on 4H-SiC MOSFET Properties},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100566231,
  author = {Eisuke Tokumitsu},
  title = {Consideration on Required Ferroelectric Properties for Nonvolatile Ferroelectric-Gate Transistors},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100566230,
  author = {Eisuke Tokumitsu and Tomohiro Oiwa and Yohei Kondo and Masaru Senoo},
  title = {All-Oxide Transparent Thin Film Transistors with and without Nonvolatile Memory Function},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100566232,
  author = {Eisuke Tokumitsu and Youhei Kondou},
  title = {Transparent oxide-channel thin film transistor with Bi-Zn-Nb-O gate insulator},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100555758,
  author = {徳光永輔 and 柴田宏 and 大岩朝洋 and 近藤洋平},
  title = {強誘電体および高誘電率材料をゲート絶縁膜に用いた酸化物チャネル薄膜トランジスタ},
  booktitle = {信学技報、SDM2008-11、OME2008-11(2008-4)},
  year = 2008,
}

@inproceedings{CTT100555760,
  author = {柴田宏 and 大岩朝洋 and 徳光永輔},
  title = {酸化物チャネル強誘電体ゲート不揮発性メモリ素子の作製と評価},
  booktitle = {信学技報、SDM2007-274(2008-03)},
  year = 2008,
}

@inproceedings{CTT100566233,
  author = {柴田宏 and 大岩朝洋 and 徳光永輔},
  title = {酸化物半導体InGaZnO膜の強誘電体ゲート薄膜トランジスタへの適用},
  booktitle = {第５５回 応用物理学関係連合会講演会 講演予稿集},
  year = 2008,
}

@inproceedings{CTT100604740,
  author = {柴田宏 and 大岩朝洋 and 徳光永輔},
  title = {酸化物チャネル強誘電体ゲートトランジスタにおけるメモリ特性},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100548794,
  author = {Eisuke TOKUMITSU and Youhei Kondou},
  title = {Fabrication and Characterization of ITO/BZN Thin Film Transistors},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100544411,
  author = {S.Hino and Tomohiro Hatayama and J.Kato and N. Miura and T.Oomori and E.Tokumitsu},
  title = {Anomalously High Channel Mobility in SiC-MOSFETs with Al2O3/SiOx/SiC Gate Structure},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100547471,
  author = {E.Tokumitsu and H.Shibata and M.Senoo},
  title = {Nonvolatile memory operetaion of ferroelectric-gate thin film transistors using oxide channel},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100544535,
  author = {加藤潤 and 日野史郎 and 三浦 成久 and 大森 達夫 and 徳光永輔},
  title = {低温堆積Al2O3を用いたSiC MOSFETのアニールによる電気的特性の変化},
  booktitle = {第６８回 応用物理学関係連合講演会},
  year = 2007,
}

@inproceedings{CTT100544415,
  author = {日野史郎 and 畑山 智裕 and 加藤潤 and 守谷仁 and 三浦 成久 and 大森 達夫 and 徳光永輔},
  title = {極薄膜酸化膜を用いたAl2O3/SiC MOSFETのチャネル移動度の向上（Ⅱ）},
  booktitle = {第６８回 応用物理学会学術講演会},
  year = 2007,
}

@inproceedings{CTT100544414,
  author = {近藤 洋平 and 徳光 永輔},
  title = {Bi1.5An1.0Nb1.5O7をｹﾞｰﾄ絶縁膜に用いたＩＴＯﾁｬﾈﾙ薄膜トランジスタの作製},
  booktitle = {第６８回 応用物理学会学術講演会},
  year = 2007,
}

@inproceedings{CTT100544413,
  author = {徳光永輔},
  title = {低温堆積Ａｌ２Ｏ３ｹﾞｰﾄ絶縁膜を用いたＳｉＣ－ＭＯＳＦＥＴ},
  booktitle = {SiC及び関連ワイドギャップ半導体研究会},
  year = 2007,
}

@inproceedings{CTT100508740,
  author = {徳光永輔 and 藤村朋史},
  title = {ＩＴＯチャネル強誘電体ゲートＦＥＴの特性改善},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100544412,
  author = {EISUKE TOKUMITSU},
  title = {Fabrication and Characterization of M-I-FIS ferroelectric-gate structures using HfAlOx buffer layer},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100508737,
  author = {Eisuke Tokumitsu and Hirokazu Saiki},
  title = {Characterization of Read-Out Drain Current Degradation in Ferroelectric-Gate Transistors},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100508736,
  author = {E.Tokumitsu and N.Sugita and S. Boku and T.Aoki and T.Tani},
  title = {Sol-Gel Derived(Bi,La)4Ti3O12 Thin Films with Surface Treatment before Crystallization Annealing},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100508738,
  author = {Eisuke Tokumitsu and Syahhibul Azwar and Hirokazu Saiki},
  title = {Metal-Ferroelectric-Insulator-Semiconductor (MFIS) Structures with Sol-Gel Derived (Sm,Sr)Bi2Ta2O9 Films},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100508505,
  author = {Eisuke Tokumitsu and Tomofumi Fujimura and Ｔakashi Sato},
  title = {ITO-Channel Ferroelectric-Gate Thin Film Transistor with Large Onn/off Current Radio},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100544536,
  author = {畑山 智裕 and 日野史郎 and 加藤潤 and 徳光永輔 and 三浦 成久 and 大森 達夫},
  title = {極薄酸化膜を用いたAl2O3/SiC-MOSFETのチャネル移動度の向上},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100544538,
  author = {日野史郎 and 畑山 智裕 and 加藤潤 and 徳光永輔 and 三浦 成久 and 大森 達夫},
  title = {Al2O3/SiC-MOSFETトランジスタ特性のAl2O3堆積温度依存性},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100544540,
  author = {高野 友一 and 斎木博和 and 柴田宏 and 徳光永輔},
  title = {金属／絶縁体／強誘電体／絶縁体／半導体構造（M-I-FIS構造）キャパシタの作製と評価},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100507175,
  author = {E.Tokumitsu and Ｔ.Fujimura and E.Shin},
  title = {Improved Electrical Properties of ITO-Channel Thin Film Transistor with Ferroelectric Gate Insulator},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100507174,
  author = {Eisuke Tokumitsu},
  title = {ITO-Channel Ferroelectric-Gate Thin Film Transistor with Large On-Current},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100507111,
  author = {藤村朋史 and 瀋悦 and 徳光永輔},
  title = {研磨による強誘電体表面の平坦化をおこなったBLT/ITO構造トランジスタの電気的特性},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100507110,
  author = {日野史郎 and 畑山智裕 and 徳光永輔 and 三浦成久 and 大森達夫},
  title = {MOCVD法により形成したAl2O3薄膜をゲート絶縁膜とする4H-SiC MOS-FETの作製と評価},
  booktitle = {第67回応用物理学会学術講演会},
  year = 2006,
}

@inproceedings{CTT100507133,
  author = {徳光永輔},
  title = {強誘電体ゲート構造を用いたITOチャネル薄膜トランジスタ},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100507134,
  author = {日野史郎 and 畑山智裕 and 徳光永輔 and 三浦成久 and 大森達夫},
  title = {MOCVD法による堆積膜／SiCの作製と評価},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100507176,
  author = {E.Tokumitsu and Tomoharu Aoki and Takeo Tani},
  title = {Crystallographic Orientation Control of Sol-gel-derived (Bi,La)4Ti3O12 (BLT) Films using Surface Seed Layer},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100507177,
  author = {Eisuke Tokumitsu and Etsu Shin and Masaru Seno},
  title = {ITO-channel thin film transistor with (Ba, Sr)TiO3 gate insulator},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100507178,
  author = {Tomohiro Hatayama and Shiro Hino and Shio Hagiwara and Eisuke Tokumitsu},
  title = {Preparation of Al2O3 Thin Films on SiC by Metal Organic Chemical Vapor Deposition},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100507179,
  author = {Eisuke Tokumitsu and Takeo Tani},
  title = {Sol-Gel Derived (BiNd)4Ti3O12/(Bi,La)4Ti3O12/(Bi,Nd)4Ti3O12(BNT/BLT/BNT) Stacked Capacitors},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100507180,
  author = {E.Tokumitsu},
  title = {ITO Channel Thin-Film Transistor with Ferroelectric Gate Insulator},
  booktitle = {Proceedings of 2nd International TFT Conference},
  year = 2006,
}

@inproceedings{CTT100507832,
  author = {Tomoharu Aoki and Takeo Tani and Eisuke Tokumitsu},
  title = {Electrical Properties of Bi4-xPrxTi3O12(BPT) Thin Films Prepared by Sol-Gel Method},
  booktitle = {Transactions of Materials Research Society of Japan},
  year = 2005,
}

@inproceedings{CTT100507827,
  author = {Eisuke Tokumitsu and Takaaki Miyasako and Masaru Senoo},
  title = {Non-volatile Thin Film Transistors Using Ferroelectric/ITO Structures},
  booktitle = {2005 Mater. Res. Soc. Symp. Proc.},
  year = 2005,
}

@inproceedings{CTT100507787,
  author = {Eisuke Tokumitsu and Masaru Senoo and Takaaki Miyasako},
  title = {Use of ferroelectric gate insulator for thin film transistors with ITO channel},
  booktitle = {Journal of Microelectronic Engineering},
  year = 2005,
}

@inproceedings{CTT100507828,
  author = {Eisuke Tokumitsu and Takaaki Miyasako and Masaru Senoo},
  title = {Impact of low pressure consolidation annealing on electrical properties of sol-gel derived Pb(Zr,Ti)O3 films},
  booktitle = {Journal of the European Ceramic Society},
  year = 2005,
}

@inproceedings{CTT100507852,
  author = {Hirokazu Saiki and Eisuke Tokumitsu},
  title = {Characterization of Metal-Ferroelectric-Metal Insulator-Semiconductor(MFMIS) FETs Using (Sr,Sm)0.8Bi2.2O9(SSBT) Thin Films},
  booktitle = {Materials Research Society Symp. Proc.},
  year = 2004,
}

@inproceedings{CTT100507877,
  author = {Eisuke Tokumitsu and Masahito Kishi},
  title = {Sm Doping Effects on Electrical Properties of Sol-Gel Derived SrBi2Ta2O9 Films},
  booktitle = {Materials Research Society Symp. Proc.},
  year = 2003,
}

@inproceedings{CTT100507868,
  author = {Naoki Sugita and Eisuke Tokumitsu},
  title = {IrO2/Ir Multilayer-Structure Electrode for MFMIS Ferroelectric Gate Transistors},
  booktitle = {Intergrated Ferroelectrics},
  year = 2003,
}

@inproceedings{CTT100455774,
  author = {徳光永輔 and 大見俊一郎 and 岩井洋},
  title = {High-k　ゲート絶縁膜用酸化物材料の研究},
  booktitle = {電気学会電子材料研究会資料},
  year = 2001,
}

@inproceedings{CTT100455772,
  author = {E.Tokumitsu and N.Kawaguchi and S.M.Yoon},
  title = {Flexible Logic-Gate Using Ferroelectric Films},
  booktitle = {2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices, Cheju, Korea},
  year = 2001,
}

@inproceedings{CTT100455771,
  author = {E.Tokumitsu and N.Kawaguchi and S.M.Yoon},
  title = {Switchable NAND/NOR Logic-Gate Using Ferroelectric Control Capacitor},
  booktitle = {Ext. Abst. 20th Electronic Materials Symp., Nara, Japan},
  year = 2001,
}

@inproceedings{CTT100536342,
  author = {Sung-ming YOON and Eisuke TOKUMITSU and Hiroshi ISHIWARA},
  title = {Realization of adaptive learning function in a neuron circuit using metal/ferroelectric (SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>)/semiconductor field effect transisitor (MFSFET)},
  booktitle = {Jpn. J. Appl. Phys.},
  year = 1999,
}

@inproceedings{CTT100417463,
  author = {Sung-ming YOON and Yuji KURITA and Eisuke TOKUMITSU and Hiroshi ISHIWARA},
  title = {Electrical Characteristics of Neuron Oscillation Circuits Composed of MOSFETs and Complementary Unijunction Transistors},
  booktitle = {Japanese Journal Applied Physics},
  year = 1998,
}

@inproceedings{CTT100417175,
  author = {Eisuke TOKUMITSU and Kensuke ITANI and Bum-Ki MOON and Hiroshi ISHIWARA},
  title = {Crystalline Quality and Electrical Properties of PbZrxTi1-xO3 Thin Films Prepared on SrTiO3-Covered Si Substrates},
  booktitle = {Japanese Journal of Applied Physics},
  year = 1995,
}

@inproceedings{CTT100536171,
  author = {Eisuke Tokumitsu and Kensuke Itani and Bum-Ki Moon and Hiroshi Ishiwara},
  title = {Preparation of PbZrxTi1-xO3 Films on Si Substrates using SrTiO3 Buffer Layers},
  booktitle = {Materials Research Society Symposium Proceedings},
  year = 1994,
}

@inproceedings{CTT100417455,
  author = {Eisuke Tokumitsu},
  title = {Partial Switching Kinetics of Ferroelectric PZT Thin Films Prepared by Sol-Gel Technique},
  booktitle = {Japanese Journal Applied Physics},
  year = 1994,
}

@inproceedings{CTT100417457,
  author = {EISUKE TOKUMITSU and MAKOTO KONAGAI},
  title = {Free carrier saturation in III-V compound semiconductors},
  booktitle = {Materials Science Forum},
  year = 1993,
}

@inproceedings{CTT100535745,
  author = {EISUKE TOKUMITSU},
  title = {Correlation between Fermi level stabilization positions and maximumfree carrier coucentrations in (]G0003[)-(]G0005[) compound semiconductors},
  booktitle = {Japanese Journal Applied Physics},
  year = 1990,
}

@inproceedings{CTT100608096,
  author = {Eisuke Tokumitsu and Kiyoshi Takahashi},
  title = {Photo-Metalorganic Molecular Beam Epitaxy - a New Epitaxial Growth Technique -},
  booktitle = {},
  year = 1988,
}

@misc{CTT100555757,
  author = {徳光永輔},
  title = {FeRAMの最近の進展と強誘電体ゲート構造メモリ},
  year = 2007,
}

@misc{CTT100508503,
  author = {Eisuke Tokumitsu},
  title = {Tutorial 1:Materials and Processes for Nonvolatile Memories---Ferroelectric Materials and FeRAM---},
  year = 2007,
}

@misc{CTT100594215,
  author = {EISUKE TOKUMITSU},
  title = {Investigations on transport properties and a novel epitaxial growth technique for III-V compound semiconductors},
  year = 1987,
}

@misc{CTT100672998,
  author = {徳光永輔 and 原田　裕一　},
  title = {グラフェンの改質方法},
  howpublished = {登録特許},
  year = 2015,
  month  = {},
  note   = {特願2012-161320(2012/07/20), 特開2014-019622(2014/02/03), 特許第5783609号(2015/07/31)}
}


@misc{CTT100672994,
  author = {徳光永輔 and 原田　裕一},
  title = {半導体装置の製造方法},
  howpublished = {登録特許},
  year = 2015,
  month  = {},
  note   = {特願2012-161322(2012/07/20), 特開2014-022631(2014/02/03), 特許第5825683号(2015/10/23)}
}


@misc{CTT100665181,
  author = {徳光永輔 and 原田　裕一},
  title = {ＭＯＳ構造の製造方法},
  howpublished = {公開特許},
  year = 2013,
  month  = {},
  note   = {特願2012-026957(2012/02/10), 特開2013-165144(2013/08/22)}
}


@misc{CTT100607746,
  author = {徳光永輔 and 守谷　仁 and 日野　史郎 and 三浦　成久 and 大森　達夫},
  title = {炭化珪素半導体装置の製造方法},
  howpublished = {登録特許},
  year = 2013,
  month  = {},
  note   = {特願2008-219554(2008/08/28), 特開2010-056285(2010/03/11), 特許第5344873号(2013/08/23)}
}


@misc{CTT100587122,
  author = {徳光永輔 and 日野　史郎 and 加藤　潤 and 三浦　成久},
  title = {炭化珪素半導体装置の製造方法},
  howpublished = {登録特許},
  year = 2012,
  month  = {},
  note   = {特願2007-212141(2007/08/16), 特開2009-049099(2009/03/05), 特許第5072482号(2012/08/31)}
}


@misc{CTT100577197,
  author = {徳光永輔 and 日野　史郎 and 畑山　智裕 and 三浦　成久 and 大森　達夫},
  title = {炭化珪素電界効果型トランジスタ及びその製造方法},
  howpublished = {登録特許},
  year = 2014,
  month  = {},
  note   = {特願2007-176089(2007/07/04), 特開2009-016530(2009/01/22), 特許第5519901号(2014/04/11)}
}


@misc{CTT100572896,
  author = {徳光永輔},
  title = {固体電子装置およびその作製方法},
  howpublished = {公開特許},
  year = 2007,
  month  = {},
  note   = {特願2006-074642(2006/03/17), 特開2007-250987(2007/09/27)}
}


@misc{CTT100573470,
  author = {徳光永輔 and 日野　史郎 and 三浦　成久 and 尾関　龍夫},
  title = {半導体装置とゲート酸化膜の製造方法},
  howpublished = {公開特許},
  year = 2007,
  month  = {},
  note   = {特願2005-188347(2005/06/28), 特開2007-012684(2007/01/18)}
}


@misc{CTT100573158,
  author = {徳光永輔},
  title = {固体電子装置},
  howpublished = {公開特許},
  year = 2006,
  month  = {},
  note   = {特願2005-039208(2005/02/16), 特開2006-121029(2006/05/11)}
}




@phdthesis{CTT100594215,
  author = {EISUKE TOKUMITSU},
  title = {Investigations on transport properties and a novel epitaxial growth technique for III-V compound semiconductors},
  school = {東京工業大学},
  year = 1987,
}