@article{CTT100820725,
  author = {Phan Trong Tue and Takaaki Miyasako and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {Effect of coercive voltage and charge injection on performance of a ferroelectric-gate thin-film transistor},
  journal = {Advances in Materials Science and Engineering},
  year = 2013,
}

@article{CTT100820727,
  author = {Phan Trong Tue and Takaaki Miyasako and Koichi Higashimine and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {Surface‒Modified Lead‒Zirconium‒Titanate System for Solution-Processed Ferroelectric-Gate Thin-Film Transistors},
  journal = {Applied Physics A: Materials Science and Processing},
  year = 2013,
}

@article{CTT100820730,
  author = {Pham Van Thanh and Bui Nguyen Quoc Trinh and Takaaki Miyasako and Phan Trong Tue and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {Interface Charge Trap Density of Solution Processed Ferroelectric Gate Thin Film Transistor Using ITO/PZT/Pt Structure},
  journal = {Ferroelectric Letters Section},
  year = 2013,
}

@article{CTT100820728,
  author = {Phan Trong Tue and Takaaki Miyasako and Jinwang Li and Huynh Thi Cam Tu and Satoshi Inoue and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {High-Performance Solution-Processed ZrInZnO Thin-Film Transistors},
  journal = {IEEE Transactions on Electron Devices},
  year = 2012,
}

@article{CTT100820731,
  author = {Pham Van Thanh and Bui Nguyen Quoc Trinh and Takaaki Miyasako and Phan Trong Tue and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)4Ti3O12/Pb(Zr,Ti)O3 Stacked Gate Insulator},
  journal = {Japanese Journal of Applied Physics},
  year = 2012,
}

@article{CTT100820732,
  author = {Takaaki Miyasako and Bui Nguyen Quoc Trinh and Masatoshi Onoue and Toshihiko Kaneda and Phan Trong Tue and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {Ferroelectric-gate thin-film transistor fabricated by total solution deposition process},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100820733,
  author = {Phan Trong Tue and Takaaki Miyasako and Bui Nguyen Quoc Trinh and Jinwang Li and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {Optimization of Pt and PZT films for Ferroelectric-Gate Thin Film Transistors},
  journal = {FERROELECTRICS},
  year = 2010,
}

@article{CTT100820735,
  author = {Takaaki Miyasako and Bui Nguyen Quoc Trinh and Masatoshi Onoue and Toshihiko Kaneda and Phan Trong Tue and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {Totally solution-processed ferroelectric-gate thin-film transistor},
  journal = {Applied Physics Letters},
  year = 2010,
}

@article{CTT100820734,
  author = {Jinwang Li and Hiroyuki Kameda and Bui Nguyen Quoc Trinh and Takaaki Miyasako and Phan Trong Tue and Eisuke Tokumitsu and Tadaoki Mitani and Tatsuya Shimoda},
  title = {A low-temperature crystallization path for device-quality ferroelectric films},
  journal = {Applied Physics Letters},
  year = 2010,
}

@inproceedings{CTT100820799,
  author = {Pham Van Thanh and Bui Nguyen Quoc Trinh and Takaaki Miyasako and Phan Trong Tue and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {Analysis on interface layer between Pt electrode and ferroelectric layer of solution-processed PZT capacitor},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100820800,
  author = {Phan Trong Tue and Bui Nguyen Quoc Trinh and Takaaki Miyasako and Pham Van Thanh and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {Lanthanum oxide capping layer for solution-processed ferroelectric-gate thin-film transistors},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100820798,
  author = {Phan Trong Tue and Bui Nguyen Quoc Trinh and Takaaki Miyasako and Eisuke Tokumitsu and Tatsuya Shimoda},
  title = {Fabrication and Characterization of a Ferroelectric-Gate FET With a ITO/PZT/SRO/Pt Stacked Structure},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100444661,
  author = {ＫＯＪＩ ＡＩＺＡＷＡ and EISUKE TOKUMITSU and ＫＯＪＩＲＯ ＯＫＡＭＯＴＯ and HIROSHI ISHIWARA},
  title = {Impact of face-to-face annealing in preparation of sol-gel-derived SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> thin films},
  booktitle = {Appl. Phys. Lett.},
  year = 2000,
}