@article{CTT100547472,
  author = {Shiro Hino and Tomohiro Hatayama and Jun Kato and Naruhisa Miura and Tatsuo Oomori and Eisuke Tokumitsu},
  title = {Anomalously High Channel Mobility in SiC MOSFET with Al2O3/SiOx/SiC Gate Structure},
  journal = {Materials Science Forum},
  year = 2009,
}

@article{CTT100566228,
  author = {Tomohiro Hatayama and Shiro Hino and Naruhisa Miura and Tatsuo Oomori and Eisuke Tokumitsu},
  title = {Remarkable Increase in the Channel Mobility of SiC-MOSFETs by Controlling the Interfacial SiO2 Layer Between Al2O3 and SiC},
  journal = {IEEE Transactions on Electron Devices},
  year = 2008,
}

@article{CTT100560646,
  author = {S.Hino and Tomohiro Hatayama and J.Kato and E.Tokumitsu and N.Miura and T.Oomori},
  title = {High channel mobility 4H-SiC metal-oxide-semiconductor field-effect transistor with low temperature metal-organic chemical-vapor deposition grown Al2O3 gate insulator},
  journal = {Applied Physics Letters},
  year = 2008,
}

@article{CTT100508734,
  author = {Shiro Hino and Tomohiro Hatayama and Naruhisa Miura and Tatsuo Oomori and Eisuke Tokumitsu},
  title = {Fabrication and Charactarization of 4H-SiC MOSFET with MOCVD-grown Al2O3 Gate Insulator},
  journal = {Materials Science Forum},
  year = 2007,
}

@inproceedings{CTT100660876,
  author = {Hiroyuki Yamada and Shiro Hino and Naruhisa Miura and Masayuki Imaizumi and Satoshi Yamakawa and EISUKE TOKUMITSU},
  title = {Fabrication of 4H-SiC MOSFETs Using Stacked Al2O3 Gate Insulator with Pre-Annealed Al2O3 Buffer Layer},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658533,
  author = {Eisuke Tokumitsu and Isahaya Yamamura and Shiro Hino and Naruhisa Miura and Masayuki Imaizumi and Hiroaki Sumitani and Tatsuo Oomori},
  title = {Comparative Study of Metalorganic Chemical Vapour Deposition of HfO2 and Al2O3 Gate Insulators on SiC for Power MOSFET Applications},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100631923,
  author = {Eisuke Tokumitsu and Akio Ishiguro and Hiroyuki Yamada and Shiro Hino and Naruhisa Miura and Masayuki Imaizumi and Hiroaki Sumitani and Tatsuo Oomori},
  title = {Al2O3/4H-SiC MOSFETs Fabricated with High-Temperature Nitridation Process},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100632302,
  author = {木田憲之助 and 日野史郎 and 三浦 成久 and 今泉昌之 and 岸谷博昭 and 徳光永輔},
  title = {H(CH3)2Alを用いたMOCVD法SiC基板上へのAl2O3膜の形成とAl2O3/SiC MOSFETの電気的特性評価},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100632115,
  author = {山田泰之 and 石黒暁夫 and 日野史郎 and 三浦 成久 and 今泉昌之 and 岸谷博昭 and 徳光永輔},
  title = {Al2O3堆積膜をゲート絶縁膜に用いたSiC-MOSFETの作製と評価},
  booktitle = {信学技報},
  year = 2011,
}

@inproceedings{CTT100632296,
  author = {山村勇速 and 徳光永輔 and 日野史郎 and 三浦 成久 and 大森 達夫},
  title = {MOCVD法によるSiC上へのHfO2膜の堆積とHfO2/SiO2/4H-SiC MOSFETの作製},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100632120,
  author = {石黒暁夫 and 山田泰之 and 日野史郎 and 三浦 成久 and 大森 達夫 and 徳光永輔},
  title = {高温窒化処理とAl2O3堆積膜を用いた4H-SiC MOSFETの作製と評価},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100614529,
  author = {石黒暁夫 and 山田泰之 and 日野史郎 and 三浦 成久 and 大森 達夫 and 徳光永輔},
  title = {高温窒化処理とAl2O3堆積膜を用いた４H-SiC MOSFETの作製と評価},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100600674,
  author = {竹崎慶太郎 and 日野史郎 and 三浦 成久 and 大森 達夫 and 徳光永輔},
  title = {窒化処理とAl2O3堆積膜を用いた4H-SiC MOSFETの作製と評価},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100589333,
  author = {竹崎慶太郎 and 日野史郎 and 三浦成久 and 大森達夫 and 徳光永輔},
  title = {窒化処理とAL2O3堆積膜を用いた4H-SiC MOSFETの作製と評価},
  booktitle = {第70回 応用物理学会学術講演会},
  year = 2009,
}

@inproceedings{CTT100566229,
  author = {H.Moriya and S.Hino and N.Miura and T.Oomori and E.Tokumitsu},
  title = {Effect of Oxidant in MOCVD-growth of Al2O3 Gate Insurator on 4H-SiC MOSFET Properties},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100544411,
  author = {S.Hino and Tomohiro Hatayama and J.Kato and N. Miura and T.Oomori and E.Tokumitsu},
  title = {Anomalously High Channel Mobility in SiC-MOSFETs with Al2O3/SiOx/SiC Gate Structure},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100544535,
  author = {加藤潤 and 日野史郎 and 三浦 成久 and 大森 達夫 and 徳光永輔},
  title = {低温堆積Al2O3を用いたSiC MOSFETのアニールによる電気的特性の変化},
  booktitle = {第６８回 応用物理学関係連合講演会},
  year = 2007,
}

@inproceedings{CTT100544415,
  author = {日野史郎 and 畑山 智裕 and 加藤潤 and 守谷仁 and 三浦 成久 and 大森 達夫 and 徳光永輔},
  title = {極薄膜酸化膜を用いたAl2O3/SiC MOSFETのチャネル移動度の向上（Ⅱ）},
  booktitle = {第６８回 応用物理学会学術講演会},
  year = 2007,
}

@inproceedings{CTT100544536,
  author = {畑山 智裕 and 日野史郎 and 加藤潤 and 徳光永輔 and 三浦 成久 and 大森 達夫},
  title = {極薄酸化膜を用いたAl2O3/SiC-MOSFETのチャネル移動度の向上},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100544538,
  author = {日野史郎 and 畑山 智裕 and 加藤潤 and 徳光永輔 and 三浦 成久 and 大森 達夫},
  title = {Al2O3/SiC-MOSFETトランジスタ特性のAl2O3堆積温度依存性},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100507110,
  author = {日野史郎 and 畑山智裕 and 徳光永輔 and 三浦成久 and 大森達夫},
  title = {MOCVD法により形成したAl2O3薄膜をゲート絶縁膜とする4H-SiC MOS-FETの作製と評価},
  booktitle = {第67回応用物理学会学術講演会},
  year = 2006,
}

@inproceedings{CTT100507134,
  author = {日野史郎 and 畑山智裕 and 徳光永輔 and 三浦成久 and 大森達夫},
  title = {MOCVD法による堆積膜／SiCの作製と評価},
  booktitle = {},
  year = 2006,
}