@article{CTT100627545,
  author = {Gwang-Geun Lee and Eisuke Tokumitsu and Sung-Min Yoon and Yosihisa Fujisaki and Joo-Won Yoon and Hiroshi Ishiwara},
  title = {The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene)},
  journal = {Applied Physics Letters},
  year = 2011,
}

@article{CTT100614542,
  author = {Sung-Min Yoon and Shin-Hyuk Yang and Soon-Won Jung and Chun-Won Byun and Sang-Hee Ko Park and Chi-Sun Hwang and Gwang-Geun Lee and Eisuke Tokumitsu and Hiroshi Ishiwara},
  title = {Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In-Ga-Zn ocide-based ferroelectric memory transistor},
  journal = {Applied Physics Letters},
  year = 2010,
}

@article{CTT100535805,
  author = {Sung-ming Yoon and Eisuke Tokumitsu and Hiroshi Ishiwara},
  title = {Ferroelectric Neuron Integrated Circuits using SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>-Gate FET's and CMOS Schmitt-Trigger Oscillators},
  journal = {IEEE Transactions on Electron Devices},
  year = 2000,
}

@article{CTT100535807,
  author = {Sung-ming YOON and Eisuke TOKUMITSU and Hiroshi ISHIWARA},
  title = {Improvement of Memory Retention Characteristics in Ferroelectric Neuron Circuits Using a Pt/ SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>/Pt/Ti/SiO<sub>2</sub>/Si Structure-Field Effect Transistor as a Synapse Device},
  journal = {Jpn. J. Appl. Phys.},
  year = 2000,
}

@article{CTT100535810,
  author = {Sung-ming Yoon and Eisuke Tokumitsu and Hiroshi Ishiwara},
  title = {Adaptive-Learning Neuron Integrated Circuits Using Metal-Ferroelectric (SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>)-Semiconductor (MFS) FETs},
  journal = {IEEE Electron Device Letters},
  year = 1999,
}

@article{CTT100425422,
  author = {Sung-ming Yoon and Eisuke Tokumitsu and Hiroshi Ishiwara},
  title = {An electrically modifiable synapse arrary composed of metal-ferroelectric-semiconductor (MFS) FETs using SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> thin films},
  journal = {IEEE Electron Device Lett.},
  year = 1999,
}

@inproceedings{CTT100611600,
  author = {G.-G. Lee and S.-M. Yoon and J.-W. Yoon and Y. Fujisaki and H. Ishiwara and E. Tokumitsu},
  title = {Flexible Ferroelectric-TFTs Using IGZO-Channel and P(VDF-TrFE)},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100622407,
  author = {GwangGeun Lee and Sung-ming Yoon and Yosihisa Fujisaki and Hiroshi Ishiwara and Eisuke Tokumitsu},
  title = {Fabrication of Organic P(VDF-TrFE) Film on PEN Substrate for Flexible IGZO-channel Ferroelectric-gate TFTs},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100617816,
  author = {Gwang-Geun Lee and Sung-Min Yoon and Joo-Won Yoon and Yosihisa Fujisaki and Hiroshi Ishiwara and Eisuke Tokumitsu},
  title = {Flexible non-volatile memory TFT with IGZO-channel and ferroelectric polymer},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100604738,
  author = {Gwang-Geun Lee and Sung-Min Yoon and Joo-Won Yoon and 藤崎芳久 and 石原宏 and 徳光永輔},
  title = {有機強誘電体P(VDF-TrFE)と無機酸化物半導体IGZOを用いた強誘電体ゲート薄膜トランジスタの作製と評価},
  booktitle = {信学技報、SDM2010-16、OME2010-16(2010-04)},
  year = 2010,
}

@inproceedings{CTT100605090,
  author = {GwangGeun Lee and Sung-ming Yoon and JooWon Yoon and Yosihisa Fujisaki and Hiroshi Ishiwara and Eisuke Tokumitsu},
  title = {Fabrication of IGZO-channel Ferroelectric-gate TFTs with Organic P(VDF-TrFE) Film},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100455772,
  author = {E.Tokumitsu and N.Kawaguchi and S.M.Yoon},
  title = {Flexible Logic-Gate Using Ferroelectric Films},
  booktitle = {2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices, Cheju, Korea},
  year = 2001,
}

@inproceedings{CTT100455771,
  author = {E.Tokumitsu and N.Kawaguchi and S.M.Yoon},
  title = {Switchable NAND/NOR Logic-Gate Using Ferroelectric Control Capacitor},
  booktitle = {Ext. Abst. 20th Electronic Materials Symp., Nara, Japan},
  year = 2001,
}

@inproceedings{CTT100536342,
  author = {Sung-ming YOON and Eisuke TOKUMITSU and Hiroshi ISHIWARA},
  title = {Realization of adaptive learning function in a neuron circuit using metal/ferroelectric (SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>)/semiconductor field effect transisitor (MFSFET)},
  booktitle = {Jpn. J. Appl. Phys.},
  year = 1999,
}

@inproceedings{CTT100417463,
  author = {Sung-ming YOON and Yuji KURITA and Eisuke TOKUMITSU and Hiroshi ISHIWARA},
  title = {Electrical Characteristics of Neuron Oscillation Circuits Composed of MOSFETs and Complementary Unijunction Transistors},
  booktitle = {Japanese Journal Applied Physics},
  year = 1998,
}