@article{CTT100535806,
  author = {Eisuke TOKUMITSU and Gen FUJII and Hiroshi ISHIWARA},
  title = {Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor(MFIS)-and Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Ferroelectric SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> Film and SrTa<sub>2</sub>O<sub>6</sub>/SiON Buffer Layer},
  journal = {Jpn. J. Appl. Phys.},
  year = 2000,
}

@article{CTT100536340,
  author = {E.Tokumitsu and Gen Fujii and Hiroshi Ishiwara},
  title = {Nonvolatile ferroelectric-gate FETs using SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>/Pt/SrTa<sub>2</sub>O<sub>6</sub>/SiON/Si structures},
  journal = {Appl. Phys. Lett.},
  year = 1999,
}