@article{CTT100659578,
  author = {C.-H. Yu and H.-T. Hsu and C.-Y. Chiang and C.-I Kuo and Y. Miyamoto and E. Y. Chang},
  title = {Performance Evaluation of InGaSb/AlSb P-Channel High-Hole-Mobility Transistor Faricated Using BCl3 Dry Etching},
  journal = {JPN. J. APPL. PHYS.},
  year = 2013,
}

@article{CTT100659579,
  author = {E. Y. Chang and C.-I Kuo and H.-T. Hsu and C.-Y. Chiang and Y. Miyamoto},
  title = {InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications},
  journal = {Appl. Phys. Exp.},
  year = 2013,
}

@article{CTT100659577,
  author = {F. Fatah and C.-I Kuo and H.-T. Hsu and C.-Y. Chiang and C.-Y. Hsu and Y. Miyamoto and E. Y. Chang},
  title = {Bias-Dependent Radio Frequency Performance for 40 nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz},
  journal = {JPN. J. APPL. PHYS.},
  year = 2012,
}

@article{CTT100610508,
  author = {C-I. Kuo and H-T. Hsu and Y-L. Chen and C-Y. Wu and E. Y. Chang and Y. Miyamoto and W-C. Tsern and K. C. Sahoo},
  title = {RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (InxGa1 - xAs)m/(InAs)n Superlattice-Channel Structure for Millimeter-Wave Applications},
  journal = {IEEE Electron Device Letters},
  year = 2010,
}

@article{CTT100601396,
  author = {Chia-Ta Chang and Heng-Tung  Hsu and Edward Yi Chang and Chien-I Kuo and Jui-Chien  Huang and Chung-Yu  Lu and Yasuyuki Miyamoto},
  title = {30-GHz Low-Noise Performance of 100-nm-Gate-Recessed n-GaN/AlGaN/GaN HEMTs},
  journal = {IEEE Electron Device Letters},
  year = 2010,
}

@article{CTT100565405,
  author = {Chien-I KUO and Heng-Tung HSU and Edward Yi CHANG and Yasuyuki MIYAMOTO and Wen-Chung TSERN},
  title = {InAs High Electron Mobility Transistors with Buried Gate for Ultralow-Power-Consumption Low-Noise Amplifier Application},
  journal = {Japanese Journal of Applied Physics},
  year = 2008,
}

@article{CTT100554640,
  author = {Chien-I Kuo and Heng-Tung Hsu and Edward Yi Chang and Chia-Yuan Chang and Yasuyuki Miyamoto and Suman Datta and Marko Radosavljevic and Guo-Wei Huang and Ching Ting Lee},
  title = {RF and Logic Performance Improvement of In0.7Ga0.3As/InAs/In0.7Ga0.3As composite channel HEMTs Using Gate-Sinking Technology},
  journal = {IEEE Electron Device Lett.},
  year = 2008,
}

@article{CTT100549484,
  author = {Chia-Yuan  Chang and Heng-Tung  Hsu and Edward Yi  Chang and Chien-I  Kuo and Suman   Datta and Marko  Radosavljevic and YASUYUKI MIYAMOTO and Guo-Wei  Huang},
  title = {Investigation of Impact Ionization in InAs-Channel HEMT for High-Speed and Low-Power Applications},
  journal = {IEEE Electron Dev. Lett.},
  year = 2007,
}

@inproceedings{CTT100619798,
  author = {Chien-I Kuo and Wee Chin Lim and Heng-Tung Hsu and Chin-Te Wang and Li-Han Hsu and Faiz Aizad and Guo-Wei Hung and Yasuyuki Miyamoto and Edward Yi Chang},
  title = {Bonding Temperature Effect on the Performance of Flip Chip Assembled 150nm mHEMT Device on Organic Substrate},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610521,
  author = {Faiz Aizad and Heng-Tung Hsu and Chien-I Kuo and Chien-Ying Wu and Edward Yi Chang and Yasuyuki Miyamoto and Guo-Wei Huang and Yu-Lin Chen and Yu-Sheng Chiu},
  title = {Investigation Logic Performances of 80-nm HEMTs for InxGa1?xAs},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610520,
  author = {C.-T. Wang and C.-I. Kuo and W.-C. Lim and L.-H. Hsu and H.-T. Hsu and Y. Miyamoto and E.Y. Chang and S.-P. Tsai and Y.-S. Chiu},
  title = {An 80 nm In0.7Ga0.3As MHEMT with Flip-Chip Packaging for W-Band Low Noise Applications},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100576971,
  author = {Chien-I  Kuo and Heng-Tung  Hsu and Chung Li and Chien Ying  Wu and Edward Yi  Chang and YASUYUKI MIYAMOTO and Y.-L. Chen and D. Biswas},
  title = {A 40-nm-Gate InAs/InGaAs Composite-Channel HEMT with 2200 mS/mm and 500-GHz fT},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100576966,
  author = {Edward Yi  Chang and Chien-I  Kuo and Heng-Tung  Hsu and YASUYUKI MIYAMOTO and Chia Ta Chang and Chien Ying  Wu},
  title = {Evaluation of InAs QWFET for Low Power Logic applications},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100565409,
  author = {C. Y. Chang and H. T. Hsu and E. Y. Chang and C. I. Kuo and Y. Miyamoto},
  title = {InAs-Channel HEMTs for Ultra- Low-Power LNA Applications},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100576962,
  author = {Chien-I  Kuo and Edward Yi  Chang and Chia-Yuan  Chang and Heng-Tung  Hsu and YASUYUKI MIYAMOTO},
  title = {Investigation of impact ionization from InXGa1-XAs to InAs channel HEMTs for high speed and low power applications},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100549524,
  author = {Chia-Yuan Chang and Edward Yi Chang and Yi-Chung Lien and Yasuyuki Miyamoto and Chien-I Kuo and Sze-Hung  Cheng and Li-Hsin  Chu},
  title = {High-PerformanceIn0.52Al0.48As/In0.6Ga0.4AsPower Metamorphic HEMT for Ka-Band Applications,},
  booktitle = {},
  year = 2006,
}