@article{CTT100715509,
  author = {F. A. Fatah and Y.-C. Lin and R.-X. Liu and K.-C. Yang and T.-W. Lin and H.-T. Hsu and J.-H. Yang and Y. Miyamoto and H. Iwai and C. Hu and S. Salahuddin and E. Y. Chang},
  title = {A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/ In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications,},
  journal = {Applied Physics Express},
  year = 2016,
}

@article{CTT100715190,
  author = {F. A. Fatah and Y.-C. Lin and T.-Y. Lee and K.-C. Yang and R.-X. Liu and J.-R. Chan and H.-T. Hsu and Y. Miyamoto and E. Y. Chang},
  title = {Potential of Enhancement Mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for Using in High-Speed and Low-Power Logic Applications},
  journal = {Solid State Sci. Technol},
  year = 2015,
}

@article{CTT100659579,
  author = {E. Y. Chang and C.-I Kuo and H.-T. Hsu and C.-Y. Chiang and Y. Miyamoto},
  title = {InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications},
  journal = {Appl. Phys. Exp.},
  year = 2013,
}

@article{CTT100659578,
  author = {C.-H. Yu and H.-T. Hsu and C.-Y. Chiang and C.-I Kuo and Y. Miyamoto and E. Y. Chang},
  title = {Performance Evaluation of InGaSb/AlSb P-Channel High-Hole-Mobility Transistor Faricated Using BCl3 Dry Etching},
  journal = {JPN. J. APPL. PHYS.},
  year = 2013,
}

@article{CTT100659577,
  author = {F. Fatah and C.-I Kuo and H.-T. Hsu and C.-Y. Chiang and C.-Y. Hsu and Y. Miyamoto and E. Y. Chang},
  title = {Bias-Dependent Radio Frequency Performance for 40 nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz},
  journal = {JPN. J. APPL. PHYS.},
  year = 2012,
}

@article{CTT100610508,
  author = {C-I. Kuo and H-T. Hsu and Y-L. Chen and C-Y. Wu and E. Y. Chang and Y. Miyamoto and W-C. Tsern and K. C. Sahoo},
  title = {RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (InxGa1 - xAs)m/(InAs)n Superlattice-Channel Structure for Millimeter-Wave Applications},
  journal = {IEEE Electron Device Letters},
  year = 2010,
}

@article{CTT100598425,
  author = {Chia-Yuan Chang and Heng-Tung Hsu and Edward Yi Chang and Hai-Dang Trinh and Yasuyuki Miyamoto},
  title = {InAs-Channel Metal-Oxide-Semiconductor HEMTs  with Atomic-Layer-Deposited Al2O3 Gate Dielectric},
  journal = {Electrochemical and Solid-State Letters,},
  year = 2009,
}

@article{CTT100576961,
  author = {Chia-Yuan  Chang and Heng-Tung  Hsu and Edward Yi  Chang and YASUYUKI MIYAMOTO},
  title = {InAs-Channel High-Electron-Mobility Transistors for Ultralow-Power Low Noise Amplifier Applications},
  journal = {Japanese Journal of Applied Physics},
  year = 2009,
}

@article{CTT100565405,
  author = {Chien-I KUO and Heng-Tung HSU and Edward Yi CHANG and Yasuyuki MIYAMOTO and Wen-Chung TSERN},
  title = {InAs High Electron Mobility Transistors with Buried Gate for Ultralow-Power-Consumption Low-Noise Amplifier Application},
  journal = {Japanese Journal of Applied Physics},
  year = 2008,
}

@article{CTT100554640,
  author = {Chien-I Kuo and Heng-Tung Hsu and Edward Yi Chang and Chia-Yuan Chang and Yasuyuki Miyamoto and Suman Datta and Marko Radosavljevic and Guo-Wei Huang and Ching Ting Lee},
  title = {RF and Logic Performance Improvement of In0.7Ga0.3As/InAs/In0.7Ga0.3As composite channel HEMTs Using Gate-Sinking Technology},
  journal = {IEEE Electron Device Lett.},
  year = 2008,
}

@article{CTT100549484,
  author = {Chia-Yuan  Chang and Heng-Tung  Hsu and Edward Yi  Chang and Chien-I  Kuo and Suman   Datta and Marko  Radosavljevic and YASUYUKI MIYAMOTO and Guo-Wei  Huang},
  title = {Investigation of Impact Ionization in InAs-Channel HEMT for High-Speed and Low-Power Applications},
  journal = {IEEE Electron Dev. Lett.},
  year = 2007,
}

@inproceedings{CTT100619798,
  author = {Chien-I Kuo and Wee Chin Lim and Heng-Tung Hsu and Chin-Te Wang and Li-Han Hsu and Faiz Aizad and Guo-Wei Hung and Yasuyuki Miyamoto and Edward Yi Chang},
  title = {Bonding Temperature Effect on the Performance of Flip Chip Assembled 150nm mHEMT Device on Organic Substrate},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100576971,
  author = {Chien-I  Kuo and Heng-Tung  Hsu and Chung Li and Chien Ying  Wu and Edward Yi  Chang and YASUYUKI MIYAMOTO and Y.-L. Chen and D. Biswas},
  title = {A 40-nm-Gate InAs/InGaAs Composite-Channel HEMT with 2200 mS/mm and 500-GHz fT},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100576966,
  author = {Edward Yi  Chang and Chien-I  Kuo and Heng-Tung  Hsu and YASUYUKI MIYAMOTO and Chia Ta Chang and Chien Ying  Wu},
  title = {Evaluation of InAs QWFET for Low Power Logic applications},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100565409,
  author = {C. Y. Chang and H. T. Hsu and E. Y. Chang and C. I. Kuo and Y. Miyamoto},
  title = {InAs-Channel HEMTs for Ultra- Low-Power LNA Applications},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100576962,
  author = {Chien-I  Kuo and Edward Yi  Chang and Chia-Yuan  Chang and Heng-Tung  Hsu and YASUYUKI MIYAMOTO},
  title = {Investigation of impact ionization from InXGa1-XAs to InAs channel HEMTs for high speed and low power applications},
  booktitle = {},
  year = 2008,
}