@article{CTT100821138,
  author = {Joel Molina-Reyes and Takuya Hoshii and Shun-Ichiro Ohmi and Hiroshi Funakubo and Atsushi Hori and Ichiro Fujiwara and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {NiSi2 as a Bottom Electrode for Enhanced Endurance of Ferroelectric Y-doped HfO2 Thin Films},
  journal = {Jpn. J. Appl. Phys.},
  year = 2020,
}

@article{CTT100822933,
  author = {Joel Molina-Reyes and Takuya Hoshii and Shun-Ichiro Ohmi and Hiroshi Funakubo and Atsushi Hori and Ichiro Fujiwara and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {NiSi2 as a Bottom Electrode for Enhanced Endurance of Ferroelectric Y-doped HfO2 Thin Films},
  journal = {Japanese Journal of Applied Physics},
  year = 2020,
}

@article{CTT100588886,
  author = {Reyes Joel Molina and A. Torres and W. Calleja and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Degradation and breakdown of W-La2O3 stack after annealing in N-2},
  journal = {JAPANESE JOURNAL OF APPLIED PHYSICS},
  year = 2008,
}

@article{CTT100576512,
  author = {Miranda Enrique and Molina Reyes Joel and Y Kim and HIROSHI IWAI},
  title = {Tunneling in sub-5nm La2O3 Deposited by E-beam Evaporation},
  journal = {Journal of Non-Crystalline Solids},
  year = 2006,
}

@article{CTT100576511,
  author = {Miranda Enrique and HIROSHI IWAI and Molina Reyes Joel and Y Kim},
  title = {Degradation of High-K La2O3 Gate Dielectrics Using Progressive Electrical Stress},
  journal = {Microelectronics  Reliability},
  year = 2005,
}

@inproceedings{CTT100852900,
  author = {J. Molina and T. Mimura and Y. Nakamura and T. Shimizu and H. Funakubo and I. Fujiwara and T. Hoshii and S. Ohmi and A. Hori and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Interface engineering of BEOL compatible ferroelectric Y:HfO2 device for enhanced endurance},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100813980,
  author = {Joel Molina-Reyes and Takuya Hoshii and Shun-Ichiro Ohmi and Hiroshi Funakubo and Atsushi Hori and Ichiro Fujiwara and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {Endurance Improvement in Ferroelectric Y-doped HfO2 Thin Films on NiSi2 with Low-Thermal Budget Processing},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100821301,
  author = {Joel Molina-Reyes and Haruki Iwatsuka and Takuya Hoshii and Shun-Ichiro Ohmi and Hiroshi Funakubo and Atsushi Hori and Ichiro Fujiwara and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {NiSi2 as a Promotor of Ferroelectricity in Si-doped HfO2 Thin Films after Low-Thermal Budget Processing},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813974,
  author = {J. Molina and H. Iwatsuka and T. Hoshii and S. Ohmi and H. Funakubo and A. Hori and I. Fujiwara and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Ferroelectric Properties of Si doped HfO2 Thin Films with NiSi2 as Bottom Electrode},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100830712,
  author = {J. Molina and K. Tachi and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and T. Hattori and I. Hiroshi},
  title = {Charge Trapping Characteristics of W-La2O3-nSi Mis Capacitors After Post-Metallization Annealing PMA in N2},
  booktitle = {},
  year = 2006,
}