@book{CTT100678456,
  author = {Satoshi Sugahara and Yota Takamura and Yusuke Shuto and Shuu’ichirou Yamamoto},
  title = {Field-Effect Spin-Transistors},
  publisher = {Springer Netherlands},
  year = 2014,
}

@article{CTT100846255,
  author = {Y. Shiotsu and S. Yamamoto and Y. Shuto and H. Funakubo and M. K. Kurosawa and S. Sugahara},
  title = {Modeling and Design of a New Piezoelectronic Transistor for Ultralow-Voltage High-Speed Integrated Circuits},
  journal = {IEEE Trans. on Electron Devices},
  year = 2020,
}

@article{CTT100754182,
  author = {Y. Takamura and Y. Shuto and S. Yamamoto and H. Funakubo and M. Kurosawa and S. Nakagawa and S. Sugahara},
  title = {Inverse-magnetostriction-induced switching current reduction of STT-MTJs and its application for low-voltage MRAM},
  journal = {Solid-State Electron.},
  year = 2016,
}

@article{CTT100687451,
  author = {T. Akushichi and Y. Takamura and Y. Shuto and S. Sugahara},
  title = {Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlOx/Si tunnel contacts with high quality tunnel barriers prepared by radical-oxygen annealing},
  journal = {J. Appl. Phys.},
  year = 2015,
}

@article{CTT100686150,
  author = {Y. Takamura and T. Akushichi and Y. Shuto and S. Sugahara},
  title = {Analysis and design of nonlocal spin devices with electric-field-induced spin-transport acceleration},
  journal = {J. Appl. Phys.},
  year = 2015,
}

@article{CTT100686351,
  author = {Y. Kawame and T. Akushichi and Y. Takamura and Y. Shuto and S. Sugahara},
  title = {Fabrication and characterization of spin injector using a high-quality B2-ordered-Co2FeSi0.5Al0.5/MgO/Si(100) tunnel contact},
  journal = {J. Appl. Phys.},
  year = 2015,
}

@article{CTT100695027,
  author = {R. Nakane and Y. Shuto and H. Sukegawa and Z.C. Wen and S. Yamamoto and S. Mitani and M. Tanaka and K. Inomata and S. Sugahara},
  title = {Fabrication of pseudo-spin-MOSFETs using a multi-project wafer CMOS chip},
  journal = {Solid-State Electronics},
  year = 2014,
}

@article{CTT100669488,
  author = {Y. Takamura and T. Akushichi and A. Sadono and T. Okishio and Y. Shuto and S. Sugahara},
  title = {Analysis of Hanle-effect signals observed in Si-channel spin accumulation devices},
  journal = {J. Appl. Phys.},
  year = 2014,
}

@article{CTT100640880,
  author = {Y. Takamura and K. Hayashi and Y. Shuto and R. Nakane and S. Sugahara},
  title = {Fabrication of High-Quality Co2FeSi/SiOxNy/Si(100) Tunnel Contacts Using Radical-Oxynitridation-Formed SiOxNy Barrier for Si-Based Spin Transistors},
  journal = {J. Electron. Mater.},
  year = 2012,
}

@article{CTT100640885,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Evaluation and control of break-even time of nonvolatile SRAM based on spin-transistor architecture with spin-transfer-torque MTJs},
  journal = {J. Appl. Phys.},
  year = 2012,
}

@article{CTT100640889,
  author = {S. Yamamoto and Y. Shuto and S. Sugahara},
  title = {Nonvolatile delay flip-flop using spin-transistor architecture with spin transfer torque MTJs for power-gating systems},
  journal = {IET Electronics Letters},
  year = 2011,
}

@article{CTT100641000,
  author = {Y. Takamura and T. Sakurai and R. Nakane and Y. Shuto and S. Sugahara},
  title = {Epitaxial germanidation of full-Heusler Co2FeGe alloy thin films formed by rapid thermal annealing},
  journal = {J. Appl. Phys.},
  year = 2011,
}

@article{CTT100629984,
  author = {Y. Shuto and R. Nakane and W. H. Wang and H. Sukegawa and S. Yamamoto and M. Tanaka and K. Inomata and S. Sugahara},
  title = {A New Spin-Functional Metal-Oxide-Semiconductor Field-Effect Transistor Based on Magnetic Tunnel Junction Technology: Pseudo-Spin-MOSFET},
  journal = {Appl. Phys. Exp.},
  year = 2010,
}

@article{CTT100629902,
  author = {Shuu'ichirou  Yamamoto and Yusuke Shuto and Satoshi Sugahara},
  title = {Nonvolatile SRAM (NV-SRAM) Using Resistive Switching Devices: Variable-Transconductance MOSFET Approach},
  journal = {Jpn. J. Appl. Phys},
  year = 2010,
}

@article{CTT100600058,
  author = {A. M. Nazmul and Tomohiro Amemiya and Yusuke Shuto and Satoshi Sugahara and Masaaki Tanaka},
  title = {High temperature ferromagnetism in GaAs-Based heterostructures with Mn δ doping},
  journal = {Phys. Rev. Lett.},
  year = 2005,
}

@inproceedings{CTT100768963,
  author = {Y. Shiotsu and S. Yamamoto and Y. Shuto and H. Funakubo and M. K. Kurosawa and S. Sugahara},
  title = {Design and circuit performance of a new piezoelectronic transistor},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100768982,
  author = {塩津勇作 and 山本修一郎 and 周藤悠介 and 舟窪浩 and 黒澤実 and 菅原聡},
  title = {新構造ピエゾエレクトロニックトランジスタの設計とそのデバイス・回路性能},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100784477,
  author = {Sugahara and Y. Shuto and S. Yamamoto and H. Funakubo and M. K. Kurosawa},
  title = {Piezoelectronic Transistor for Low-Voltage High-Speed Integrated Electronics},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100742637,
  author = {北形大樹 and 周藤悠介 and 山本修一郎 and 菅原聡},
  title = {不揮発性SRAMのアーキテクチャとエネルギー性能},
  booktitle = {電子情報通信学会技術研究報告},
  year = 2017,
}

@inproceedings{CTT100742359,
  author = {北形大樹 and 周藤悠介 and 山本修一郎 and 菅原聡},
  title = {不揮発性SRAMの設計とエネルギー性能の解析},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100742352,
  author = {T. Akushichi and D. Kitagata and Y. Shuto and S. Sugahara},
  title = {Analysis of Spin Accumulation in a Si Channel Using CoFe/MgO/Si Spin Injectors},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100742353,
  author = {D. Kitagata and Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Analysis of Break-Even Time for Nonvolatile SRAM with SOTB Technology},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100742351,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Energy Performance of Nonvolatile Power-Gating SRAM Using SOTB Technology},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100742350,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Design and Implementation of Nonvolatile Power-Gating SRAM Using SOTB Technology},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100742347,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Nonvolatile Power-gating Architecture for SRAM using SOTB Technology},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100742349,
  author = {T. Akushichi and D. Kitagata and Y. Takamura and Y. Shuto and S. Sugahara},
  title = {Spin Accumulation in a Si Channel using High-Quality CoFe/MgO/Si Spin Injectors},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100742348,
  author = {D. Kitagata and T. Akushichi and Y. Takamura and Y. Shuto and S. Sugahara},
  title = {Robust Design of Electric-field-assisted Nonlocal Si-MOS Spin-devices},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100742346,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {New power-gating architectures using nonvolatile retention: Comparative study of nonvolatile power-gating (NVPG) and normally-off architectures for SRAM},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100754181,
  author = {Y. Takamura and Y. Shuto and S. Yamamoto and H. Funakubo and M.K. Kurosawa and S. Nakagawa and S. Sugahara},
  title = {Inverse-magnetostriction-induced switching current reduction of STT-MTJs and its application for low-voltage MRAMs},
  booktitle = {2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)},
  year = 2016,
}

@inproceedings{CTT100695036,
  author = {T. Kondo and Y. Kawame and Y. Takamura and Y. Shuto and S. Sugahara},
  title = {Fabrication of high-quality Co2FeSi0.5Al0.5/CoFe/MgO/Si spin injectors for Si-channel spin devices},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100695037,
  author = {D. Kitagata and T. Akushichi and Y. Takamura and Y. Shuto and S. Sugahara},
  title = {Design and analysis of electric-field-assisted nonlocal silicon-channel spin devices},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100695031,
  author = {Yusuke Shuto and Shuu'ichirou Yamamoto and Satoshi Sugahara},
  title = {Comparative study of power-gating architectures for nonvolatile FinFET-SRAM using spintronics-based retention technology},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100681137,
  author = {悪七泰樹 and 髙村陽太 and 周藤悠介 and 菅原聡},
  title = {スピン蓄積デバイスにおける Hanle 効果の解析},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100681135,
  author = {周藤悠介 and 高橋克典 and 悪七泰樹 and 髙村陽太 and 菅原聡},
  title = {CoFe/TIO2/Siスピン注入源の作製と評価},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100681139,
  author = {川目悠 and 悪七泰樹 and 髙村陽太 and 周藤悠介 and 菅原聡},
  title = {(100)配向したCo2FeSi0.5Al0.5/MgO/Siトンネル接合の作製とそのスピン注入源応用},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100681123,
  author = {悪七泰樹 and 髙村陽太 and 周藤悠介 and 菅原聡},
  title = {高品質CoFe/MgO/SiおよびCoFe/AlOx/Siトンネルコンタクトを用いた Siチャネルへのスピン注入},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100681132,
  author = {髙村陽太 and 悪七泰樹 and 周藤悠介 and 菅原聡},
  title = {電界誘起によるスピン伝導の加速を用いた非局所スピンデバイス},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100678095,
  author = {Y. Kawame and T. Akushichi and Y. Shuto and Y. Takamura and S. Sugahara},
  title = {Fabrication and characterization of spin injector using a high-quality B2-ordered-Co2FeSi0.5Al0.5 /MgO/Si tunnel contact},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100678096,
  author = {Y. Kawame and Y. Shuto and K. Takahashi and T. Akushichi and Y. Takamura and S. Sugahara},
  title = {Fabrication of a CoFe/TiO2/Si tunnel contact and its spin-injector application},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100678037,
  author = {Y. Takamura and T. Akushichi and Y. Shuto and S. Sugahara},
  title = {Analysis and design of nonlocal spin devices with bias-induced spin-transport acceleration},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100678094,
  author = {T. Akushichi and Y. Takamura and Y. Shuto and S. Sugahara},
  title = {Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlOx/Si tunnel contacts with the high quality tunnel barriers prepared by radical-oxygen annealing},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100695032,
  author = {Yusuke Shuto and Shuu'ichirou Yamamoto and Satoshi Sugahara},
  title = {Comparative Study of Power-Gating Architectures for Nonvolatile SRAM Cells Based on Spintronics Technology},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100695033,
  author = {Yusuke Shuto and Shuu'ichirou Yamamoto and Satoshi Sugahara},
  title = {Near-threshold voltage operation of nonvolatile SRAM cell based on pseudo-spin-FinFET architecture},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100695034,
  author = {Yusuke Shuto and Shuu'ichirou Yamamoto and Satoshi Sugahara},
  title = {0.5V operation and performance of nonvolatile SRAM cell based on pseudo-spin-FinFET architecture},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100676057,
  author = {高橋克典 and 悪七泰樹 and 周藤悠介 and 高村陽太 and 菅原聡},
  title = {CoFe/TiO2/Siトンネルコンタクトの作製とそのスピン注入源への応用},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100676056,
  author = {川目悠 and 悪七泰樹 and 周藤悠介 and 高村陽太 and 菅原聡},
  title = {B2型Co2FeSi0.5Al0.5/MgO/Siスピン注入源の作製と評価},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100676055,
  author = {悪七泰樹 and 高村陽太 and 周藤悠介 and 菅原聡},
  title = {ラジカル酸素アニールによる高品質トンネル障壁を有するCoFe/MgO/SiおよびCoFe/AlOx/Siコンタクトを用いたスピン蓄積の評価},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100676054,
  author = {高村陽太 and 悪七泰樹 and 周藤悠介 and 菅原聡},
  title = {3端子スピン蓄積デバイスにおけるHanle効果信号の解析},
  booktitle = {第38回 日本磁気学会学術講演会},
  year = 2014,
}

@inproceedings{CTT100695035,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Design and performance of nonvolatile SRAM cells based on pseudo-spin-FinFET architecture},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100668220,
  author = {Y. Takamura and A. Sadono and T. Akushichi and T. Okishio and Y. Shuto and S. Sugahara},
  title = {Analysis of Hanle-effect signals observed in a Si-channel spin accumulation device with a high-quality CoFe/MgO/Si spin injector},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100664403,
  author = {Y. Takamura and A. Sadono and T. Akushichi and T. Okishio and Y. Shuto and S. Sugahara},
  title = {Analysis of Hanle-effect signals observed in Si-channel spin accumulation devices},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100640866,
  author = {S. Sugahara and Y. Shuto and S. Yamamoto},
  title = {Energy-efficient nonvolatile logic systems based on CMOS/spintronics hybrid technology},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100640962,
  author = {山本修一郎 and 周藤悠介 and 菅原聡},
  title = {擬似スピンMOSFET技術を用いたFPGAの不揮発性パワーゲーティング},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100640868,
  author = {菅原聡 and 周藤悠介 and 山本修一郎},
  title = {スピントロニクス/CMOS融合技術:スピントランジスタ・アーキテクチャ},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100640959,
  author = {周藤悠介 and 山本修一郎 and 菅原聡},
  title = {擬似スピンMOSFETを用いた不揮発性SRAM:スリープモード動作とその応用},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100640960,
  author = {山本修一郎 and 周藤悠介 and 菅原聡},
  title = {擬似スピンMOSFETを用いた不揮発性DFF：BETにおける静的リーク電流の影響},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100640963,
  author = {周藤悠介 and 山本修一郎 and 菅原聡},
  title = {擬似スピンMOSFETを用いた不揮発性SRAMのスタティックノイズマージンとエネルギー性能の解析},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100640869,
  author = {菅原 聡 and 周藤 悠介 and 山本 修一郎},
  title = {スピントロニクス/CMOS融合技術: スピン機能MOSFETとその低消費電力ロジック応用},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100640901,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Analysis of static noise margin and power-gating efficiency of a new nonvolatile SRAM cell using pseudo-spin-MOSFETs},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100640902,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Static noise margin and power-gating efficiency of a new nonvolatile SRAM cell based on pseudo-spin-transistor architecture},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100640965,
  author = {周藤悠介 and 山本修一郎 and 菅原聡},
  title = {擬似スピンMOSFETを用いた不揮発性SRAM:スタティックノイズマージン評価},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100640966,
  author = {高村陽太 and 林建吾 and 影井泰次郎 and 周藤悠介 and 菅原聡},
  title = {ラジカル酸窒化膜を用いたCFS/SiOxNy/Siトンネル接合の形成と構造評価},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100640905,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Nonvolatile SRAM based on spin-transistor architecture for nonvolatile power-gating systems},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100640906,
  author = {S. Yamamoto and Y. Shuto and S. Sugahara},
  title = {Nonvolatile power-gating FPGAs based on spin-transistor architecture},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100640908,
  author = {Y. Takamura and K. Hayashi and Y. Shuto and S. Sugahara},
  title = {Formation and structural analysis of half-metallic Co2FeSi/SiOxNy/Si contacts with radical-oxynitridation-SiOxNy tunnel barrier},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100640874,
  author = {菅原聡 and 周藤悠介 and 山本修一郎},
  title = {CMOS/スピントロニクス融合技術による不揮発性ロジックシステムの展望},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100627851,
  author = {髙村 陽太 and 林 建吾 and 周藤 悠介 and 菅原 聡},
  title = {ラジカル酸窒化法を用いたCo2FeSi/SiOxNy/Siトンネル接合の形成},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100640969,
  author = {周藤悠介 and 山本修一郎 and 菅原聡},
  title = {擬似スピンMOSFETを用いた不揮発性SRAM：スリープ時リーク電流削減効果},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100640914,
  author = {Y. Takamura and K. Hayashi and Y. Shuto and S. Sugahara},
  title = {Formation of half-metallic tunnel junctions of Co2FeSi/SiOxNy/Si using radical oxynitridation technique},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100640916,
  author = {S. Yamamoto and Y. Shuto and S. Sugahara},
  title = {Application of NV-DFF and NV-SRAM using spin-transistor Architecture with spin transfer torque MTJs to nonvolatile power-gating FPGA},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100640915,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Evaluation and control of break-even time for nonvolatile SRAM using pseudo-spin-MOSFETs wit spin-transfer-torque MTJs},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100640917,
  author = {S. Yamamoto and Y. Shuto and S. Sugahara},
  title = {Power-gating ability and power aware design of nonvolatile delay flip-flop using spin-transistor architecture with spin transfer torque MTJs},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100640977,
  author = {林建吾 and 高村陽太 and 周藤悠介 and 菅原聡},
  title = {RTA法を用いたCo2FeSiの形成における初期多層膜構造の影響},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100640878,
  author = {Y. Shuto and Y. Takamura and S. Sugahara},
  title = {Spin-functional MOSFETs based on half-metallic ferromagnet technology},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100619519,
  author = {Y. Takamura and T. Sakurai and R. Nakane and Y. Shuto and S. Sugahara},
  title = {Comparative study of full-Heusler Co2FeSi and Co2FeGe alloy thin films formed by rapid thermal annealing},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100619516,
  author = {Y. Shuto and Y. Takamura and S. Sugahara},
  title = {Numerical simulation analysis of nonlocal multi-terminal devices for spin current detection in semiconductors},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100629843,
  author = {菅原聡 and 周藤悠介 and 山本修一郎},
  title = {不揮発性メモリ素子を用いた不揮発性/ばらつき補償SRAM技術},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100619522,
  author = {周藤悠介 and 高村陽太 and 菅原聡},
  title = {非局所配置マルチターミナルデバイスの数値解析シミュレーション},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100619523,
  author = {櫻井 卓也 and 高村 陽太 and 中根 了昌 and 周藤 悠介 and 菅原 聡},
  title = {RTAによるフルホイスラー合金Co2FeGe薄膜のエピタキシャル形成},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100629970,
  author = {山本修一郎 and 周藤悠介 and 菅原聡},
  title = {擬似スピンMOSFETを用いた不揮発性SRAMと不揮発性DFFのFPGA応用},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100629969,
  author = {周藤悠介 and 山本修一郎 and 菅原聡},
  title = {擬似スピンMOSFETを用いた不揮発性SRAM：セルリーク電流とBETの削減},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100629967,
  author = {周藤悠介 and 山本修一郎 and 菅原聡},
  title = {擬似スピンMOSFETを用いた不揮発性SRAM：ストア時の書き込み電流制御},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100629971,
  author = {山本修一郎 and 周藤悠介 and 菅原聡},
  title = {擬似スピンMOSFETを用いた不揮発性DFF：静的リーク電流とBETの削減},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100629985,
  author = {Y. Shuto and R. Nakane and W. H. Wang and H. Sukegawa and S. Yamamoto and M. Tanaka and K. Inomata and S. Sugahara},
  title = {A new spin-functional MOSFET based on MTJ technology: Pseudo-spin-MOSFET},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100619520,
  author = {T. Sakurai and Y. Takamura and R. Nakane and Y. Shuto and S. Sugahara},
  title = {Epitaxial germanidation of full-Heusler Co2FeGe alloy thin films by rapid thermal annealing},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100629904,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Operating analysis of nonvolatile SRAM using pseudo-spin-MOSFETs},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100629972,
  author = {周藤悠介 and 中根了昌 and Wenhong Wang and 介川裕章 and 山本修一郎 and 田中雅明 and 猪俣浩一郎 and 菅原 聡},
  title = {擬似スピンMOSFETの作製と評価},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100629963,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Operating analysis of nonvolatile SRAM using pseudo-spin-MOSFETs},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100605436,
  author = {Y. Shuto and R. Nakane and H. Sukegawa and S. Yamamoto and M. Tanaka and K. Inomata and S. Sugahara},
  title = {Fabrication and characterization of pseudo-spin-MOSFETs},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100605406,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Analysis and design of nonvolatile SRAM using spintronics technology},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100605410,
  author = {S. Yamamoto and Yusuke Shuto and Satoshi Sugahara},
  title = {Nonvolatile power-gating microprocessor concepts using nonvolatile SRAM and flip-flop},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100605412,
  author = {Shuu’ichirou.Yamamoto and Yusuke Shuto and Satoshi Sugahara},
  title = {Nonvolatile SRAM(NV-SRAM) Using Functional MOSFET Merged with Resistive Switching Devices},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100605422,
  author = {Sanjeewa Dissanayake and 富山健太郎 and 周藤悠介 and 菅原聡 and 竹中充 and 高木信一},
  title = {超薄膜(110)面GOI p型MOSFETの電気的特性},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100605420,
  author = {周藤悠介 and 山本修一郎 and 菅原聡},
  title = {擬似スピンMOSFETを用いた不揮発性SRAM：電源遮断動作消費電力の評価},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100605352,
  author = {周藤悠介 and 山本修一郎 and 菅原聡},
  title = {Spin-RAM/ReRAM技術を用いた機能MOSFETとその不揮発性SRAM/フリップフロップへの応用},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100605418,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Analysis and Design of Nonvolatile SRAM Using MOSFET-Based Spin-Transistors},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100583566,
  author = {高村陽太 and 中根了昌 and 周藤悠介 and 菅原聡},
  title = {不純物偏析技術を用いたCo2FeSiソース/ドレインMOSFETの作製と評価},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100605405,
  author = {Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Variability-Tolerant CMOS Gates Using Functional MOSFETs with Resistive Switching Devices},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100583517,
  author = {菅原 聡 and 高村 陽太 and 中根 了昌 and 周藤悠介 and 山本 修一郎},
  title = {スピンMOSFET を用いたスピントランジスタ・エレクトロニクス},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100672470,
  author = {田中 雅明 and 周藤 悠介 and 矢田 慎介 and 杉浦 邦晃 and ファム ナム ハイ and 横山 正史 and 大矢 忍 and 中根 了昌 and 菅原 聡},
  title = {半導体スピントロニクス・ヘテロ構造電子デバイスの研究},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100672477,
  author = {田中 雅明 and ファム ナム ハイ and 横山 正史 and 周藤 悠介 and アーサンナズムル and 大矢 忍 and 菅原 聡},
  title = {半導体スピントロニクス・ヘテロ構造電子デバイスの研究},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100600113,
  author = {A. M. Nazmul and 雨宮智宏 and 周藤悠介 and 菅原 聡 and 田中雅明},
  title = {Mn デルタドープGaAsをベースとした半導体へテロ構造における高温強磁性とその制御},
  booktitle = {},
  year = 2004,
}

@inproceedings{CTT100600070,
  author = {A. M. Nazmul and T. Amemiya and Y. Shuto and S. Sugahara and M. Tanaka},
  title = {Mn delta-doped GaAs/p-AlGaAs Heterostructures with High Curie Temperature and Its Control},
  booktitle = {},
  year = 2004,
}

@misc{CTT100640865,
  author = {M. Tanaka and S. Ohya and Y. Shuto and S. Yada and S. Sugahara},
  title = {III-V and Group-IV Based Ferromagnetic Semiconductors for Spintronics},
  year = 2011,
}

@misc{CTT100640998,
  author = {菅原聡 and 周藤悠介 and 山本修一郎},
  title = {CMOS/スピントロニクス融合技術による不揮発性ロジックシステムの展望},
  year = 2011,
}

@misc{CTT100605322,
  author = {菅原聡 and 周藤悠介 and 山本修一郎},
  title = {スピン機能MOSFETによる不揮発性ロック 不揮発性パワーゲーティング・ロジックへの応用 不揮発性SRAM/フリップフロップの可能性を検証},
  year = 2009,
}

@misc{CTT100605323,
  author = {山本修一郎 and 周藤悠介 and 菅原聡},
  title = {スピン機能CMOSによる不揮発性高機能・高性能ロジック},
  year = 2009,
}

@misc{CTT100633942,
  author = {菅原聡 and 山本修一郎 and 周藤悠介},
  title = {電子回路},
  howpublished = {登録特許},
  year = 2013,
  month  = {},
  note   = {特願2009-078082(2009/03/27), 特開2010-232959(2010/10/14), 特許第5234547号(2013/04/05)}
}